1N4x48W, 1N914BW Datasheet by Taiwan Semiconductor Corporation

$-1N4148WI1N4448W/1N914BW SEMICONDUCTOR @893;
1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
1 Version: K1804
150mA, 75V Switching Diode
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Moisture sensitivity level: level 1, per J-STD-020
● Compliance to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOD-123F
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 8.85 ± 0.5mg
KEY PARAMETERS
PARAMETER VALUE UNIT
IF 150 mA
VRRM 75 V
IFSM 2 A
VF at IF=100mA 1.00 V
TJ Max. 150 °C
Package SOD-123F
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Marking code on the device
1N4148W D1
1N4448W D2
1N914BW D3
Power dissipation PD 400 mW
Reverse voltage VR 100 V
Repetitive peak reverse voltage VRRM 75 V
Forward current IF 150 mA
Repetitive peak forward current IFRM 300 mA
Non-repetitive peak forward surge current @ t=1.0µs IFSM 2 A
Junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +150 °C
E 1N4148WI1N4448WI1N914BW SEMICONDUCTOR r
1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
2 Version: K1804
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 450 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN MAX UNIT
Forward
voltage (1)
1N4448W, 1N914BW IF = 5mA, TJ = 25°C
VF
0.62 0.72
V 1N4148W IF = 10mA, TJ = 25°C - 1.00
1N4448W, 1N914BW IF = 100mA, TJ = 25°C - 1.00
Reverse voltage
IR=100µA, TJ = 25°C
VR
100 -
V
IR=5µA, TJ = 25°C 75 -
Reverse leakage current (2)
VR=20V TJ = 25°C
IR
- 25 nA
VR=75V TJ = 25°C - 5 µA
Junction capacitance 1 MHz, VR=0V CJ - 4 pF
Reverse recovery time IF=10mA, IR=60mA,
RL=100Ω, IRR=1mA trr - 4 ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO. PACKAGE PACKING
1N4148W RHG SOD-123F 3K / 7" Reel
1N4148W RH SOD-123F 3K / 7" Reel
1N4448W RHG SOD-123F 3K / 7" Reel
1N4448W RH SOD-123F 3K / 7" Reel
1N914BW RHG SOD-123F 3K / 7" Reel
1N914BW RH SOD-123F 3K / 7" Reel
TA -N1N4148W/1N4448WI1N914BW SEM 0NDUCTOH
1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
3 Version: K1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
Fig.2 Reverse Current VS. Reverse Voltage
Fig.3 Admissible Power Dissipation Curve
Fig.4 Typical Junction Capacitance
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
100
0 20 40 60 80 100 120
0
100
200
300
400
500
0 20 40 60 80 100 120 140 160
0
1
2
3
4
5
6
0 2 4 6 8 10
Reverse Current (µA)
Instantaneous Forward Voltage (V)
Power Dissipation (mW)
Ambient Temperature (
o
C)
Junction Capacitance (pF)
Reverse Voltage (V)
Reverse Voltage (V)
Instantaneous Forward Current (mA)
TA - N SEM ONDUCTOH 1N4148WI1N4448W/1N914BW
1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
4 Version: K1804
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOD-123F
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 1.50 1.70 0.059 0.067
B 3.30 3.90 0.130 0.154
C 0.50 0.70 0.020 0.028
D 2.50 2.70 0.098 0.106
E 0.80 1.15 0.031 0.045
F 0.05 0.20 0.002 0.008
DIM. Unit (mm) Unit (inch)
Typ. Typ.
C 2.86 0.113
G 1.52 0.060
X 1.34 0.053
X1 4.20 0.165
Y 1.80 0.071
TA -N1N4148W/1N4448WI1N914BW SEM 0NDUCTOH
1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
5 Version: K1804
Notice
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