BZD27-M Series Datasheet by Vishay General Semiconductor - Diodes Division

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BZD27-M Series
www.vishay.com Vishay Semiconductors
Rev. 1.6.,18-Mar-15 1Document Number: 85155
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Zener Diodes with Surge Current Specification
FEATURES
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Meets JESD 201 class 2 whisker test
• ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
• Wave and reflow solderable
• AEC-Q101 qualified
• Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
• Base P/N-HM3 - halogen-free, RoHS-compliant, and
automotive grade (available on request)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2) TJ = 25 °C prior to surge
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 3.6 to 200 V
Test current IZT 5 to 100 mA
VBR 7 to 188 V
VWM 6.2 to 160 V
PPPM 150 W
TJ max. 175 °C
VZ specification Pulse current
Int. construction Single
Polarity Uni-directional
17249
Available
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZD27-M Series BZD27C3V6P-M3-08 to BZD27C200P-M3-08 3000 per 7" reel (8mm tape) 30 000/box
BZD27C3V6P-M3-18 to BZD27C200P-M3-18 10 000 per 13" reel (8 mm tape) 50 000/box
PACKAGE
PACKAGE
NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
WHISKER TEST
ACC. JESD 201 SOLDERING CONDITIONS
DO-219AB (SMF) 15 mg UL 94 V-0 MSL level 1
(according J-STD-020) Class 2 Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation TL = 105 °C Ptot 2300 mW
TA = 30 °C (1) Ptot 800 mW
Non repetitive peak surge power dissipation (2) 100 μs square pulse PZSM 300 W
10/1000 μs waveform PRSM 150 W
Junction to lead RthJL 30 K/W
Junction to ambient air Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads ( 40 μm thick) RthJA 180 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg -65 to +175 °C
Operating temperature range Top -65 to +175 °C
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BZD27-M Series
www.vishay.com Vishay Semiconductors
Rev. 1.6.,18-Mar-15 2Document Number: 85155
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Electrical characteristics when used as regulator diodes
•Maximum V
F = 1.2 V, at IF = 0.2 A
(1) Pulse test: tp 5 ms
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IR at VRZZ at IZT1 VZ at IZT1
VmA μA V%/°C
MIN. NOM. MAX. MAX. TYP. MAX. MIN. MAX.
BZD27C3V6P-M N0 3.4 3.6 3.8 100 100 1 4 8 -0.14 -0.04
BZD27C3V9P-M N1 3.7 3.9 4.1 100 50 1 4 8 -0.14 -0.04
BZD27C4V3P-M N2 4 4.3 4.6 100 25 1 4 7 -0.12 -0.02
BZD27C4V7P-M N3 4.4 4.7 5 100 10 1 3 7 -0.1 0
BZD27C5V1P-M N4 4.8 5.1 5.4 100 5 1 3 6 -0.08 0.02
BZD27C5V6P-M N5 5.2 5.6 6 100 10 2 2 4 -0.04 0.04
BZD27C6V2P-M N6 5.8 6.2 6.6 100 5 2 2 3 -0.01 0.06
BZD27C6V8P-M N7 6.4 6.8 7.2 100 10 3 1 3 0 0.07
BZD27C7V5P-M N8 7 7.5 7.9 100 50 3 1 2 0 0.07
BZD27C8V2P-M N9 7.7 8.2 8.7 100 10 3 1 2 0.03 0.08
BZD27C9V1P-M O0 8.5 9.1 9.6 50 10 5 2 4 0.03 0.08
BZD27C10P-M O1 9.4 10 10.6 50 7 7.5 2 4 0.05 0.09
BZD27C11P-M O2 10.4 11 11.6 50 4 8.2 4 7 0.05 0.1
BZD27C12P-M O3 11.4 12 12.7 50 3 9.1 4 7 0.05 0.1
BZD27C13P-M O4 12.4 13 14.1 50 2 10 5 10 0.05 0.1
BZD27C15P-M O5 13.8 15 15.6 50 1 11 5 10 0.05 0.1
BZD27C16P-M O6 15.3 16 17.1 25 1 12 6 15 0.06 0.11
BZD27C18P-M O7 16.8 18 19.1 25 1 13 6 15 0.06 0.11
BZD27C20P-M O8 18.8 20 21.2 25 1 15 6 15 0.06 0.11
BZD27C22P-M O9 20.8 22 23.3 25 1 16 6 15 0.06 0.11
BZD27C24P-M P0 22.8 24 25.6 25 1 18 7 15 0.06 0.11
BZD27C27P-M P1 25.1 27 28.9 25 1 20 7 15 0.06 0.11
BZD27C30P-M P2 28 30 32 25 1 22 8 15 0.06 0.11
BZD27C33P-M P3 31 33 35 25 1 24 8 15 0.06 0.11
BZD27C36P-M P4 34 36 38 10 1 27 21 40 0.06 0.11
BZD27C39P-M P5 37 39 41 10 1 30 21 40 0.06 0.11
BZD27C43P-M P6 40 43 46 10 1 33 24 45 0.07 0.12
BZD27C47P-M P7 44 47 50 10 1 36 24 45 0.07 0.12
BZD27C51P-M P8 48 51 54 10 1 39 25 60 0.07 0.12
BZD27C56P-M P9 52 56 60 10 1 43 25 60 0.07 0.12
BZD27C62P-M Q0 58 62 66 10 1 47 25 80 0.08 0.13
BZD27C68P-M Q1 64 68 72 10 1 51 25 80 0.08 0.13
BZD27C75P-M Q2 70 75 79 10 1 56 30 100 0.08 0.13
BZD27C82P-M Q3 77 82 87 10 1 62 30 100 0.08 0.13
BZD27C91P-M Q4 85 91 96 5 1 68 60 200 0.08 0.13
BZD27C100P-M Q5 94 100 106 5 1 75 60 200 0.09 0.13
BZD27C110P-M Q6 104 110 116 5 1 82 80 250 0.09 0.13
BZD27C120P-M Q7 114 120 127 5 1 91 80 250 0.09 0.13
BZD27C130P-M Q8 124 130 141 5 1 100 110 300 0.09 0.13
BZD27C150P-M Q9 138 150 156 5 1 110 130 300 0.09 0.13
BZD27C160P-M R0 153 160 171 5 1 120 150 350 0.09 0.13
BZD27C180P-M R1 168 180 191 5 1 130 180 400 0.09 0.13
BZD27C200P-M R2 188 200 212 5 1 150 200 500 0.09 0.13
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BZD27-M Series
www.vishay.com Vishay Semiconductors
Rev. 1.6.,18-Mar-15 3Document Number: 85155
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Electrical characteristics when used as protection diodes
(1) Non-repetitive peak reverse current in accordance with ”IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IR at VRVC at IRSM (1) VZ at IZT1
VmA μA V V A %/C
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZD27C7V5P-M N8 7 7.5 7.9 100 1500 6.2 11.3 13.3 0 0.07
BZD27C8V2P-M N9 7.7 8.2 8.7 100 1200 6.8 12.3 12.2 0.03 0.08
BZD27C9V1P-M O0 8.5 9.1 9.6 50 100 7.5 13.3 11.3 0.03 0.08
BZD27C10P-M O1 9.4 10 10.6 50 20 8.2 14.8 10.1 0.05 0.09
BZD27C11P-M O2 10.4 11 11.6 50 5 9.1 15.7 9.6 0.05 0.1
BZD27C12P-M O3 11.4 12 12.7 50 5 10 17 8.8 0.05 0.1
BZD27C13P-M O4 12.4 13 14.1 50 5 11 18.9 7.9 0.05 0.1
BZD27C15P-M O5 13.8 15 15.6 50 5 12 20.9 7.2 0.05 0.1
BZD27C16P-M O6 15.3 16 17.1 25 5 13 22.9 6.6 0.06 0.11
BZD27C18P-M O7 16.8 18 19.1 25 5 15 25.6 5.9 0.06 0.11
BZD27C20P-M O8 18.8 20 21.2 25 5 16 28.4 5.3 0.06 0.11
BZD27C22P-M O9 20.8 22 23.3 25 5 18 31 4.8 0.06 0.11
BZD27C24P-M P0 22.8 24 25.6 25 5 20 33.8 4.4 0.06 0.11
BZD27C27P-M P1 25.1 27 28.9 25 5 22 38.1 3.9 0.06 0.11
BZD27C30P-M P2 28 30 32 25 5 24 42.2 3.6 0.06 0.11
BZD27C33P-M P3 31 33 35 25 5 27 46.2 3.2 0.06 0.11
BZD27C36P-M P4 34 36 38 10 5 30 50.1 3 0.06 0.11
BZD27C39P-M P5 37 39 41 10 5 33 54.1 2.8 0.06 0.11
BZD27C43P-M P6 40 43 46 10 5 36 60.7 2.5 0.07 0.12
BZD27C47P-M P7 44 47 50 10 5 39 65.5 2.3 0.07 0.12
BZD27C51P-M P8 48 51 54 10 5 43 70.8 2.1 0.07 0.12
BZD27C56P-M P9 52 56 60 10 5 47 78.6 1.9 0.07 0.12
BZD27C62P-M Q0 58 62 66 10 5 51 86.5 1.7 0.08 0.13
BZD27C68P-M Q1 64 68 72 10 5 56 94.4 1.6 0.08 0.13
BZD27C75P-M Q2 70 75 79 10 5 62 103.5 1.5 0.08 0.13
BZD27C82P-M Q3 77 82 87 10 5 68 114 1.3 0.08 0.13
BZD27C91P-M Q4 85 91 96 5 5 75 126 1.2 0.09 0.13
BZD27C100P-M Q5 94 100 106 5 5 82 139 1.1 0.09 0.13
BZD27C110P-M Q6 104 110 116 5 5 91 150 1 0.09 0.13
BZD27C120P-M Q7 114 120 127 5 5 100 167 0.9 0.09 0.13
BZD27C130P-M Q8 124 130 141 5 5 110 185 0.81 0.09 0.13
BZD27C150P-M Q9 138 150 156 5 5 120 205 0.73 0.09 0.13
BZD27C160P-M R0 153 160 171 5 5 130 224 0.67 0.09 0.13
BZD27C180P-M R1 168 180 191 5 5 150 252 0.6 0.09 0.13
BZD27C200P-M R2 188 200 212 5 5 160 278 0.54 0.09 0.13
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BZD27-M Series
www.vishay.com Vishay Semiconductors
Rev. 1.6.,18-Mar-15 4Document Number: 85155
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
Fig. 3 - Power Dissipation vs. Ambient Temperature
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
0.1
1
10
0.6 0.8 1.0 1.2 1.4 1.6
17411
IF - Forward Current (A)
VF - Forward Voltage (V)
Max. VF
Ty p. VF
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
CD - Typ. Junction Capacitance (pF)
VR - Reverse Voltage (V)
C5V1P C6V8P C12P
C27P C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150 175
22774
Ptot - Total Power Dissipation (W)
Tamb - Ambient Temperature (°C)
RthJL = 30K/W
RthJA = 180K/W
17415
t
IRSM
(%)
100
90
50
10
t1
t1 = 10 µs
t2 = 1000 µs
t2
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BZD27-M Series
www.vishay.com Vishay Semiconductors
Rev. 1.6.,18-Mar-15 5Document Number: 85155
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF)
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.1(0.003)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
VISHAY. o X, 0 15 W E F r A KN \J P0 ‘ m SLE’ ‘, 4E; fig/7 Mar A0 BU K0 W T P0 P2 19 190 15 80 0235 190 20 L0 15 W 175 35 DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.com/doc?91000
BZD27-M Series
www.vishay.com Vishay Semiconductors
Rev. 1.6.,18-Mar-15 6Document Number: 85155
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BLISTERTAPE DIMENSIONS FOR SMF in millimeters
18513
PS
Document-No.: S8-V-3717.02-001 (3)
— VISHAY. V
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