SI2374DS Datasheet by Vishay Siliconix

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Si2374DS
www.vishay.com Vishay Siliconix
S14-0768-Rev. A, 14-Apr-14 1Document Number: 62947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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N-Channel 20 V (D-S) MOSFET
Marking Code: F5
Ordering Information:
Si2374DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
100 % Rg tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•Load switch
Power management
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. TC = 25 °C.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) MAX. ID (A) dQg (TYP.)
20
0.030 at VGS = 4.5 V 5.9
7.7 nC0.034 at VGS = 2.5 V 5.5
0.041 at VGS = 1.8 V 5
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
5.9
A
TC = 70 °C 4.7
TA = 25 °C 4.5 a, b
TA = 70 °C 3.6 a, b
Pulsed Drain Current (t = 100 μs) IDM 25
Continuous Source-Drain Diode Current
TC = 25 °C IS
1.4
TA = 25 °C 0.8 a, b
Maximum Power Dissipation
TC = 25 °C
PD
1.7
W
TC = 70 °C 1.1
TA = 25 °C 0.96 a, b
TA = 70 °C 0.62 a, b
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient a, c t 5 s RthJA 100 130 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75
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Si2374DS
www.vishay.com Vishay Siliconix
S14-0768-Rev. A, 14-Apr-14 2Document Number: 62947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 20 - - V
VDS Temperature Coefficient ΔVDS/TJID = 250 μA -34-
mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ--5-
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 μA 0.4 - 1 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V - - 1 μA
VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10
On-State Drain Current aID(on) V
DS 5 V, VGS = 10 V 10 - - A
Drain-Source On-State Resistance aRDS(on)
VGS = 4.5 V, ID = 4 A - 0.025 0.030
ΩVGS = 2.5 V, ID = 3 A - 0.028 0.034
VGS = 1.8 V, ID = 2 A - 0.031 0.041
Forward Transconductance agfs VDS = 10 V, ID = 4 A - 29 - S
Dynamic b
Input Capacitance Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
- 735 -
pFOutput Capacitance Coss - 110 -
Reverse Transfer Capacitance Crss -40-
Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 4.5 A - 13.4 20
nC
VDS = 10 V, VGS = 4.5 V, ID = 4.5 A
-7.712
Gate-Source Charge Qgs -1-
Gate-Drain Charge Qgd -1-
Gate Resistance Rgf = 1 MHz 0.12 0.6 1.2 Ω
Turn-On Delay Time td(on)
VDD = 10 V, RL = 2.8 Ω
ID 3.6 A, VGEN = 8 V, Rg = 1 Ω
-48
ns
Rise Time tr -2233
Turn-Off Delay Time td(off) -1624
Fall Time tf-918
Turn-On Delay Time td(on)
VDD = 10 V, RL = 2.8 Ω
ID 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
-1020
Rise Time tr -2335
Turn-Off Delay Time td(off) -1624
Fall Time tf-1020
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - - 1.4 A
Pulse Diode Forward Current (t = 100 μs) ISM --25
Body Diode Voltage VSD IS = 3.6 A, VGS = 0 V - 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 3.6 A, dI/dt = 100 A/μs, TJ = 25 °C
-1320ns
Body Diode Reverse Recovery Charge Qrr -612nC
Reverse Recovery Fall Time ta-9-
ns
Reverse Recovery Rise Time tb-4-
— V VISHAY.
Si2374DS
www.vishay.com Vishay Siliconix
S14-0768-Rev. A, 14-Apr-14 3Document Number: 62947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
0 0.5 1 1.5 2
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
V
GS = 5V thru 2V
V
GS
= 1.5 V
V
GS
= 1.8 V
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
VGS = 1.8 V
VGS =4.5V
VGS = 2.5 V
0
2
4
6
8
0 3 6 9 12 15
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 16 V
V
DS
= 10 V
V
DS
= 5 V
I
D
= 4.5 A
0
1
2
3
4
5
0 0.3 0.6 0.9 1.2 1.5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
T
C
= 25
°
C
T
C
= 125 °C
TC = - 55 °C
0
250
500
750
1000
0 5 10 15 20
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.85
1.1
1.35
1.6
- 50 - 25 0 25 50 75 100 125 150
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
VGS = 4.5 V, 4A / 2.5V, 3A
VGS = 1.8 V, 2A
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Si2374DS
www.vishay.com Vishay Siliconix
S14-0768-Rev. A, 14-Apr-14 4Document Number: 62947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
Safe Operating Area, Junction-to-Ambient
0.2
0.35
0.5
0.65
0.8
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0.010
0.025
0.040
0.055
0.070
0 2 4 6 8
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ = 125 °C
TJ = 25 °C
ID = 4 A
0
10
20
30
0.001 0.01 0.1 1 10 100
Time (s)
Power (W)
0.01
0.1
1
10
100
0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100 ms
Limited by RDS(on)*
1 ms
TA
= 25 °C
BVDSS Limited
10 ms
100 μs
10 s, 1 s
DC
Limited by I
DM
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Si2374DS
www.vishay.com Vishay Siliconix
S14-0768-Rev. A, 14-Apr-14 5Document Number: 62947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Current Derating*
Power Junction-to-Foot Power Junction-to-Ambient
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
1.3
2.6
3.9
5.2
6.5
0 25 50 75 100 125 150
ID - Drain Current (A)
TC - Case Temperature (°C)
0
0.5
1
1.5
2
0 25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
0
0.18
0.36
0.54
0.72
0.9
0 25 50 75 100 125 150
Power (W)
TA - Ambient Temperature (°C)
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Si2374DS
www.vishay.com Vishay Siliconix
S14-0768-Rev. A, 14-Apr-14 6Document Number: 62947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62947.
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 175 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
1
0.1
0.01
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10-3 10-2 110-1
10-4
0.02
Single Pulse
0.1
0.2
0.05
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
— VISHAY.. RECOMMENDED MINIMUM PADS FOR SOT-23 I o 022 (n 559) mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} Docq'vve'n Number 72609 Rewswon 217.1;1'1708
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
Return to Index
Return to Index
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Revision: 09-Jul-2021 1Document Number: 91000
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