SCT3022AL Datasheet by Rohm Semiconductor

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ROHITI 1'1 \ 2AL 05
SCT3022AL
N-channel SiC power MOSFET
lOutline
VDSS
650V
TO-247N
RDS(on) (Typ.)
22mW
ID
93A
PD
339W
lInner circuit
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
lPackaging specifications
5) Simple to drive
Type
Packing
Tube
6) Pb-free lead plating ; RoHS compliant
Reel size (mm)
-
Tape width (mm)
-
lApplication
Basic ordering unit (pcs)
30
Solar inverters
Taping code
C11
DC/DC converters
Marking
SCT3022AL
Switch mode power supplies
Induction heating
Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
A
Unit
Drain - Source voltage
VDSS
650
V
Value
Recommended Drive Voltage
VGS_op*4
0 / +18
V
ID *1
65
A
Pulsed drain current
ID,pulse *2
232
A
Continuous drain current
ID *1
93
Range of storage temperature
Tstg
-55 to +175
°C
Gate - Source voltage (DC)
VGSS
-4 to +22
V
Junction temperature
Tj
175
°C
Gate-Source Surge Voltage (tsurge < 300nsec)
VGSS_surge*3
-4 to +26
V
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
(1)
(2)
(3)
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211114001 1/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL 05
SCT3022AL
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
-
0.34
0.44
C/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
V
Zero gate voltage
drain current
IDSS
VDS = 650V, VGS = 0V
mA
Tj = 25°C
-
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
650
-
-
1
10
Tj = 150°C
-
2
-
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS-
VGS = -4V, VDS = 0V
-
-
-100
nA
5.6
V
Static drain - source
on - state resistance
RDS(on) *5
VGS = 18V, ID = 36A
mW
Tj = 25°C
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 18.2mA
2.7
-
-
22
28.6
Tj = 125°C
-
29
-
W
Gate input resistance
RG
f = 1MHz, open drain
-
5
-
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 2/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL 05
SCT3022AL
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
S
Input capacitance
Ciss
VGS = 0V
-
2208
-
pF
Output capacitance
Coss
Transconductance
gfs *5
VDS = 10V, ID = 36A
-
12.2
-
VDS = 500V
-
118
-
Reverse transfer capacitance
Crss
f = 1MHz
-
52
-
pF
Turn - on delay time
td(on) *5
VDD = 300V, ID = 18A
-
25
-
ns
Rise time
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 300V
-
303
-
-
Fall time
tf *5
RG = 0W
-
35
-
tr *5
VGS = 18V/0V
-
53
-
Turn - off delay time
td(off) *5
RL = 17W
-
61
mJ
Turn - off switching loss
Eoff *5
-
201
-
Turn - on switching loss
Eon *5
VDD = 300V, ID=36A
VGS = 18V/0V
RG = 0W L=100mH
*Eon includes diode
reverse recovery
-
252
-
-
133
-
lGate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
V
-
53
-
Gate plateau voltage
V(plateau)
VDD = 300V, ID = 36A
-
9.6
-
nC
Gate - Source charge
Qgs *5
ID = 36A
-
31
-
Gate - Drain charge
Qgd *5
VGS = 18V
Total gate charge
Qg *5
VDD = 300V
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 3/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL @ 05
SCT3022AL
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause
thermal runaway.
*5 Pulsed
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
A
Inverse diode direct current,
pulsed
ISM *2
-
-
232
A
Inverse diode continuous,
forward current
IS *1
Tc = 25°C
-
-
93
V
Reverse recovery time
trr *5
IF = 36A, VR = 300V
di/dt = 1100A/ms
-
27
-
ns
Reverse recovery charge
Forward voltage
VSD *5
VGS = 0V, IS = 36A
-
3.2
-
Peak reverse recovery current
Irrm *5
-
10
-
A
Qrr *5
-
146
-
nC
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 4/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL @ 05
SCT3022AL
lElectrical characteristic curves
0
50
100
150
200
250
300
350
400
050 100 150 200
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Ta= 25ºC
Single Pulse
Fig.1 Power Dissipation Derating Curve
Power Dissipation : PD[W]
Case Temperature : TC[°C]
Fig.2 Maximum Safe Operating Area
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance : Rth [K/W]
Pulse Width : PW[s]
0.1
1
10
100
1000
0.1 1 10 100 1000
T
a= 25ºC
Single Pulse
PW= 10ms
PW = 100µs
PW = 1ms
PW = 100ms
Operation in this area is limited by RDS(ON)
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 5/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
SCT3022AL
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.5 Typical Output Characteristics(II)
Drain - Source Voltage : VDS [V]
Fig.6 Tj= 150ºC Typical Output
Characteristics(I)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.7 Tj= 150ºC Typical Output
Characteristics(II)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Drain Current : ID[A]
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10
Ta= 25ºC
Pulsed
10V
VGS= 8V
16V
18V
14V
20V
12V
0
5
10
15
20
25
30
35
40
45
012345
Ta = 25ºC
Pulsed
VGS= 8V
10V
14V
16V
18V
20V
12V
0
10
20
30
40
50
60
70
80
90
0246810
Ta = 150ºC
Pulsed
10V
VGS= 8V
18V
16V
20V
14V
12V
0
5
10
15
20
25
30
35
40
45
0 1 2 3 4 5
Ta = 150ºC
Pulsed
10V
VGS= 8V
16V
14V
20V
18V
12V
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 6/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL @ 05
SCT3022AL
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Drain Current : ID[A]
Gate - Source Voltage : VGS [V]
Fig.9 Typical Transfer Characteristics (II)
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V GS(th) [V]
Junction Temperature : Tj[ºC]
Fig.11 Transconductance vs. Drain Current
Transconductance : gfs [S]
Drain Current : ID[A]
Drain Current : ID[A]
0.1
1
10
0.1 1 10
V
DS
= 10V
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0
1
2
3
4
5
6
-50 0 50 100 150 200
VDS = 10V
ID = 18.2mA
0.01
0.1
1
10
100
0 2 4 6 8 10 12 14 16 18 20
T
a= 150ºC
T
a= 75ºC
T
a= 25ºC
Ta= -25ºC
VDS = 10V
Pulsed
0
10
20
30
40
50
60
70
80
90
0246810 12 14 16 18 20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
VDS = 10V
Pulsed
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 7/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL 05
SCT3022AL
lElectrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) [W]
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Junction Temperature : Tj[ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
Drain Current : ID[A]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
6 8 10 12 14 16 18 20 22
ID = 36A
ID = 62A
Ta = 25ºC
Pulsed
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
-50 0 50 100 150 200
V
GS
= 18V
Pulsed
ID = 62A
ID = 36A
0.01
0.1
110 100
V
GS
= 18V
Pulsed
T
a
= 150ºC
T
a = 12
5ºC
T
a = 75ºC
T
a = 25ºC
Ta = -25ºC
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 8/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL
SCT3022AL
lElectrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.16 Coss Stored Energy
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID[A]
Fig.18 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
Total Gate Charge : Qg[nC]
Coss Stored Energy : EOSS [mJ]
0
5
10
15
20
25
0 100 200 300 400
Ta= 25ºC
1
10
100
1000
10000
0.1 1 10 100 1000
Ciss
Coss
Crss
Ta = 25ºC
f = 1MHz
VGS = 0V
0
5
10
15
20
020 40 60 80 100 120 140
Ta = 25ºC
VDD = 300V
ID = 36A
Pulsed
1
10
100
1000
10000
0.1 1 10 100
td(on)
td(off)
Ta = 25ºC
VDD = 300V
VGS = 18V
RG = 0W
Pulsed
tf
tr
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 9/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL @ 05
SCT3022AL
lElectrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Switching Energy : E [mJ]
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
Drain Current : ID[A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
Switching Energy : E [mJ]
External Gate Resistance : RG[W]
Switching Energy : E [mJ]
0
200
400
600
800
1000
1200
1400
1600
1800
2000
020 40 60 80 100
T
a= 25ºC
V
DD=300V
V
GS
= 18V/0V
R
G=0W
L=100mH
Eon
Eoff
0
50
100
150
200
250
300
350
400
450
500
100 200 300 400 500
T
a= 25ºC
I
D=36A
V
GS = 18V/0
V
R
G=0W
L=
100mHEon
Eoff
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 5 10 15 20 25 30
Ta= 25ºC
VDD=300V
ID=36A
VGS = 18V/0V
L=100mH
Eon
Eoff
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 10/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
2AL @ 05
SCT3022AL
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Inverse Diode Forward Current : IS[A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
Inverse Diode Forward Current : IS[A]
Reverse Recovery Time : trr [ns]
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8
V
GS
= 0V
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
100
1000
110 100
T
a = 25ºC
di / dt =
1100
A / us
V
R= 300V
V
GS = 0V
Pulsed
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 11/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
Pulsew lh Mm Re V65 VG ~ Vns on IRMA. h D,U.T. i Va: 7 Ivan an; Gnu ' Charge ' E H _ VnD NH , wary Rn 2AL @ 05
SCT3022AL
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
Vsurge
Irr
Eon = ID×VDS Eoff = ID×VDS
ID
VDS
Same type
device as
D.U.T.
D.U.T.
ID
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001 12/12 TSQ50211-SCT3022AL
14.Jun.2018 - Rev.005
Datasheet
ROHm SEMICONDUCTOR
R1102
S
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support System
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
Notes
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative
and verify the latest specifica-
tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
The Products specified in this document are not designed to be radiation tolerant.
For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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