ACS780xLR Datasheet by Allegro MicroSystems

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Application 1: The ACS780xLR outputs an analog signal, VOUT
, that varies linearly with the bidirectional AC or DC primary
current, IP
, within the range specified. CF is for optimal noise management, with values that depend on the application.
ACS780xLR
DESCRIPTION
The Allegro ACS780xLR is a fully integrated current sensor
linear IC in a new core-less package designed to sense AC and
DC currents up to 100 A. This automotive-grade, low-profile
(1.5 mm thick) sensor IC package has a very small footprint.
The Hall sensor technology also incorporates common-mode
field rejection to optimize performance in the presence of
interfering magnetic fields generated by nearby current-carrying
conductors.
The device consists of a precision, low-offset linear Hall circuit
with a copper conduction path located near the die. Applied
current flowing through this copper conduction path generates
a magnetic field which the Hall IC converts into a proportional
voltage. Device accuracy is optimized through the close
proximity of the primary conductor to the Hall transducer and
factory programming of the sensitivity and quiescent output
voltage at the Allegro factory.
Chopper-stabilized signal path and digital temperature
compensation technology also contribute to the stability of the
device across the operating temperature range.
High-level immunity to current conductor dV/dt and stray
electric fields is offered by Allegro proprietary integrated shield
technology, for low-output voltage ripple and low-offset drift
in high-side, high-voltage applications.
The output of the device has a positive slope (>VCC
/ 2) when an
increasing current flows through the primary copper conduction
ACS780xLR-DS, Rev. 4
MCO-0000275
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
Continued on the next page…
Typical Application
5 V
V
OUT
R
F
C
F
C
BYP
0.1 µF
IP+
IP–
GND
ACS780xLR
VOUT
VCC
I
P
2
5
6
3
1
FEATURES AND BENEFITS
▪Core-less,micro-sized,100Acontinuouscurrentpackage
▪Ultra-lowpowerloss:200µΩinternalconductor
resistance
▪Immunitytocommon-modefieldinterference
▪Greatlyimprovedtotaloutputerrorthroughdigitally
programmed and compensated gain and offset over the full
operating temperature range
▪Industry-leadingnoiseperformancethroughproprietary
amplifier and filter design techniques
▪Integratedshieldgreatlyreducescapacitivecouplingfrom
current conductor to die due to high dV/dt signals, and
prevents offset drift in high-side, high-voltage applications
▪MonolithicHallICforhighreliability
▪4.5to5.5V,singlesupplyoperation
▪120kHztypicalbandwidth
▪3.6µsoutputrisetimeinresponsetostepinputcurrent
▪OutputvoltageproportionaltoACorDCcurrents
▪Factory-trimmedforaccuracy
▪Extremelystablequiescentoutputvoltage
▪AEC-Q100automotivequalification
PACKAGE:
7-pin PSOF package (suffix LR)
Not to scale
February 7, 2019
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
2
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
path(fromterminal5toterminal6),whichisthepathusedfor
current sampling. The internal resistance of this conductive path is
200µΩtypical,providinglowpowerloss.
The thickness of the copper conductor allows survival of the device
at high overcurrent conditions. The terminals of the conductive path
areelectricallyisolatedfromthesignalleads(pins1through4,and
DESCRIPTION (CONTINUED)
SELECTION GUIDE
Part Number Sensed Current
Direction
Primary Sampled
Current, IP
(A)
Sensitivity
Sens (Typ.)
(mV/A)
TOP
(°C) Packing [1]
ACS780LLRTR-050B-T Bidirectional ±50 40.
–40 to 150
Tape and reel
ACS780LLRTR-050U-T Unidirectional 0 to 50 60.
ACS780LLRTR-100B-T Bidirectional ±100 20.
ACS780LLRTR-100U-T Unidirectional 0 to 100 40.
ACS780KLRTR-150B-T Bidirectional ±150 transient
±100 continuous 13.33
–40 to 125
ACS780KLRTR-150U-T Unidirectional 0 to 150 transient
0 to 100 continuous 26.66
[1] Contact Allegro for additional packing options.
7), allowing the device to operate safely with voltages up to 100 V
peak on the primary conductor.
The device is fully calibrated prior to shipment from the factory.
The ACS780xLR family is lead (Pb) free. All leads are plated with
100% matte tin, and there is no Pb inside the package. The heavy
gauge leadframe is made of oxygen-free copper.
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
3
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
TYPICAL OVERCURRENT CAPABILITIES
[2][3]
Characteristic Symbol Notes Rating Unit
Overcurrent IPOC
TA = 25°C, 1 s on time, 60 s off time 285 A
TA = 85°C, 1 s on time, 35 s off time 225 A
TA = 125°C, 1 s on time, 30 s off time 170 A
TA = 150°C, 1 s on time, 10 s off time 95 A
[2] Test was done with Allegro evaluation board (85-0807-001). The maximum allowed current is limited by TJ(max) only.
[3] For more overcurrent profiles, please see FAQ on the Allegro website, www.allegromicro.com.
THERMAL CHARACTERISTICS: May require derating at maximum conditions
Characteristic Symbol Test Conditions [1] Value Unit
Package Thermal Resistance RθJA
Mounted on the Allegro evaluation board ASEK780
85-0807-001 with FR4 substrate and 8 layers of 2 oz.
copper (with an area of 1530 mm2 per layer) connected to
the primary leadframe and with thermal vias connecting
the copper layers. Performance is based on current flow-
ing through the primary leadframe and includes the power
consumed by the PCB.
18 °C/W
[1] Additional thermal information available on the Allegro website
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Notes Rating Unit
Forward Supply Voltage VCC 6 V
Reverse Supply Voltage VRCC –0.5 V
Forward Output Voltage VOUT 25 V
Reverse Output Voltage VRIOUT –0.5 V
Output Source Current IOUT(Source) VOUT to GND 2.8 mA
Output Sink Current IOUT(Sink) Minimum pull-up resistor of 500 Ω 10 mA
Nominal Operating Ambient Temperature TOP
Range K –40 to 125 °C
Range L –40 to 150 °C
Maximum Junction TJ(max) 165 °C
Storage Temperature Tstg –65 to 165 °C
SPECIFICATIONS
mwcrosystems ALLEGRO'
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
4
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
IP+
IP–
NC
7
6
5
43
2
1
NC
VOUT
GND
VCC
Terminal List Table
Number Name Description
1 VCC Device power supply terminal
2 GND Signal ground terminal
3 VOUT Analog output signal
4 NC No connection, connect to GND for optimal
ESD performance
5 IP+ Terminal for current being sampled
6 IP– Terminal for current being sampled
7 NC No connection, connect to GND for optimal
ESD performance
Functional Block Diagram
Pinout Diagram
VCC
Master Current
Supply
Hall Current
Drive
VOUT
GND
IP–
IP+
To all subcircuits
Programming
Control
Sensitivity
Control
Temperature
Sensor
Tuned
Filter
Offset
Control
EEPROM and
Control Logic
Dynamic Offset
Cancellation
Amp
ACS780xLR
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
5
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
COMMON OPERATING CHARACTERISTICS [1] valid at TOP = –40°C to 150°C and VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Supply Current ICC Output open – 11 15 mA
Power-On Time tPO TA = 25°C, CBYPASS = Open, CL = 1 nF –130 – µs
Undervoltage Lockout (UVLO)
Threshold
VUVLOH TA = 25°C, VCC rising and device function enabled – 4 – V
VUVLOL TA = 25°C, VCC falling and device function disabled – 3.5 – V
UVLO Enable/Disable Delay
Time
tUVLOE
TA = 25°C, CBYPASS = Open, CL = 1 nF, VCC
Fall Time (5 V to 3 V) = 1.5 µs – 64 – µs
tUVLOD
TA = 25°C, CBYPASS = Open, CL = 1 nF,
VCC Recover Time (3 V to 5 V) = 1.5 µs – 7 – µs
Power-On Reset Voltage VPORH TA = 25°C, VCC rising – 2.9 – V
VPORL TA = 25°C, VCC falling – 2.5 – V
Power-On Reset Release Time tPORR TA = 25°C, VCC rising – 64 – µs
Supply Zener Clamp Voltage VzTA = 25°C, ICC = 30 mA 6.5 7.5 – V
Internal Bandwidth BWiSmall signal –3 dB, CL = 1 nF, TA = 25°C – 120 – kHz
Chopping Frequency fCTA = 25°C – 500 – kHz
Oscillator Frequency fOSC TA = 25°C – 8 – MHz
OUTPUT CHARACTERISTICS
Propagation Delay Time tpd TA = 25°C, CL = 1 nF – 2.5 – µs
Rise Time trTA = 25°C, CL = 1 nF – 3 – µs
Response Time tRESPONSE TA = 25°C, CL = 1 nF – 3.6 – µs
Output Saturation Voltage VSAT(HIGH) TA = 25°C, RLOAD = 10 kΩ to GND 4.7 – – V
VSAT(LOW) TA = 25°C, RLOAD = 10 kΩ to VCC – – 400 mV
DC Output Resistance ROUT RL =4.7 kΩ from VOUT to GND, VOUT = VCC
/ 2 – <1 – Ω
Output Load Resistance RL(PULLUP) VOUT to VCC 4.7 – – kΩ
RL(PULLDWN) VOUT to GND 4.7 – – kΩ
Output Load Capacitance CLVOUT to GND – 1 10 nF
Primary Conductor Resistance RPRIMARY TA = 25°C – 200 – µΩ
Quiescent Output Voltage VOUT(QBI) IP = 0 A, TA = 25°C – VCC/2 – V
VOUT(QU) Unidirectional variant, IP = 0 A, TA = 25°C – VCC × 0.1 – V
Ratiometry Quiescent Output
Voltage Error RatERRVOUT(Q) Through supply voltage range (relative to VCC = 5 V) – 0 – %
Ratiometry Sensitivity Error RatERRSens Through supply voltage range (relative to VCC = 5 V) – < ±0.5 – %
Common-Mode Magnetic Field
Rejection CMFR Magnetic field perpendicular to Hall plates – –35 – dB
[1] Device is factory-trimmed at 5 V, for optimal accuracy.
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
6
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
X050B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC
= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP–50 – 50 A
Sensitivity
[2]
SensTA Measured using 50% of full scale IP
, TA = 25°C 38.7 40 41.3 mV/A
Sens(TOP)HT Measured using 50% of full scale IP
, TOP = 25°C to 150°C 38.7 40 41.3 mV/A
Sens(TOP)LT Measured using 50% of full scale IP
, TOP = –40°C to 25°C 38.5 40 41.5 mV/A
Noise
[3]
VNOISEPP Peak-to-peak, TA= 25°C, 1 nF on VOUT pin to GND – 36 – mV
INOISE Input referred – 0.4 – mARMS
/√(Hz)
Nonlinearity ELIN measured using ±32 A and ±16 A –1 – 1 %
Electrical Offset Voltage
[4][5]
VOE(TA) IP = 0 A, TA = 25°C –10 ±3 10 mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±5 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±10 20 mV
Electric Offset Voltage Over
Lifetime
[6] ΔVOE(LIFE)
TOP = –40°C to 150°C, estimated shift after AEC-Q100 grade 0
qualification testing – ±1 – mV
Total Output Error ETOT(HT) Measured using 50% of full scale IP
, TOP = 25°C to 150°C –3.25 ±0.8 3.25 %
ETOT(LT) Measured using 50% of full scale IP
, TOP = –40°C to 25°C –3.75 ±1.5 3.75 %
Total Output Error Including
Lifetime Drift
[7]
ETOT(HT,LIFE) Measured using 50% of full scale IP
, TOP = 25°C to 150°C –4.1 ±2.28 4.1 %
ETOT(LT,LIFE) Measured using 50% of full scale IP
, TOP = –40°C to 25°C –5.6 ±2.98 5.6 %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.
[3] ±3 sigma noise voltage.
[4] Drift is referred to ideal VOUT(QBI) = 2.5 V.
[5] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.
[6] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[7] The maximum drift of any single device during qualification testing was 4%.
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
7
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
X050U PERFORMANCE CHARACTERISTICS
[1]: TOP = –40°C to 150°C, VCC
= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP0 – 50 A
Sensitivity
[2]
SensTA Measured using 50% of full scale IP
, TA = 25°C 58.1 60 61.95 mV/A
Sens(TOP)HT Measured using 50% of full scale IP
, TOP = 25°C to 150°C 58.05 60 61.95 mV/A
Sens(TOP)LT Measured using 50% of full scale IP
, TOP = –40°C to 25°C 57.75 60 62.25 mV/A
Noise
[3]
VNOISEPP Peak-to-peak, TA= 25°C, 1 nF on VOUT pin to GND – 54 – mV
INOISE Input referred – 0.4 – mARMS
/√(Hz)
Nonlinearity ELIN measured using 32 A and 16 A –1 – 1 %
Electrical Offset Voltage
[4][5]
VOE(TA) IP = 0 A, TA = 25°C –10 ±3 10 mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±5 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±10 20 mV
Electric Offset Voltage Over
Lifetime
[6] ΔVOE(LIFE)
TOP = –40°C to 150°C, estimated shift after AEC-Q100 grade 0
qualification testing – ±1 – mV
Total Output Error ETOT(HT) Measured using 50% of full scale IP
, TOP = 25°C to 150°C –3.25 ±0.8 3.25 %
ETOT(LT) Measured using 50% of full scale IP
, TOP = –40°C to 25°C –3.75 ±1.5 3.75 %
Total Output Error Including
Lifetime Drift
[7]
ETOT(HT,LIFE) Measured using 50% of full scale IP
, TOP = 25°C to 150°C –4.1 ±2.28 4.1 %
ETOT(LT,LIFE) Measured using 50% of full scale IP
, TOP = –40°C to 25°C –5.6 ±2.98 5.6 %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.
[3] ±3 sigma noise voltage.
[4] Drift is referred to ideal VOUT(QU) = 0.5 V.
[5] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.
[6] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[7] The maximum drift of any single device during qualification testing was 4%.
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
8
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
X100B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC
= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP–100 – 100 A
Sensitivity
[2]
SensTA Measured using 33% of full scale IP
, TA = 25°C 19.4 20 20.65 mV/A
Sens(TOP)HT Measured using 33% of full scale IP
, TOP = 25°C to 150°C 19.35 20 20.65 mV/A
Sens(TOP)LT Measured using 33% of full scale IP
, TOP = –40°C to 25°C 19.25 20 20.75 mV/A
Noise
[3]
VNOISEPP Peak-to-peak, TA= 25°C, 1 nF on VOUT pin to GND – 18 – mV
INOISE Input referred – 0.4 – mARMS
/√(Hz)
Nonlinearity ELIN measured using ±36 A and ±18 A –1 – 1 %
Electrical Offset Voltage
[4][5]
VOE(TA) IP = 0 A, TA = 25°C –10 ±3 10 mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±5 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±10 20 mV
Electric Offset Voltage Over
Lifetime
[6] ΔVOE(LIFE)
TOP = –40°C to 150°C, estimated shift after AEC-Q100 grade 0
qualification testing – ±1 – mV
Total Output Error ETOT(HT) Measured using 33% of full scale IP
, TOP = 25°C to 150°C –3.25 ±0.8 3.25 %
ETOT(LT) Measured using 33% of full scale IP
, TOP = –40°C to 25°C –3.75 ±1.5 3.75 %
Total Output Error Including
Lifetime Drift
[7]
ETOT(HT,LIFE) Measured using 33% of full scale IP
, TOP = 25°C to 150°C –4.1 ±2.28 4.1 %
ETOT(LT,LIFE) Measured using 33% of full scale IP
, TOP = –40°C to 25°C –5.6 ±2.98 5.6 %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.
[3] ±3 sigma noise voltage.
[4] Drift is referred to ideal VOUT(QBI) = 2.5 V.
[5] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.
[6] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[7] The maximum drift of any single device during qualification testing was 4%.
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
9
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
X100U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC
= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP0 – 100 A
Sensitivity
[2]
SensTA Measured using 33% of full scale IP
, TA = 25°C 38.7 40 41.3 mV/A
Sens(TOP)HT Measured using 33% of full scale IP
, TOP = 25°C to 150°C 38.7 40 41.3 mV/A
Sens(TOP)LT Measured using 33% of full scale IP
, TOP = –40°C to 25°C 38.5 40 41.5 mV/A
Noise
[3]
VNOISEPP Peak-to-peak, TA= 25°C, 1 nF on VOUT pin to GND – 36 – mV
INOISE Input referred – 0.4 – mARMS
/√(Hz)
Nonlinearity ELIN measured using 36 A and 18 A –1 – 1 %
Electrical Offset Voltage
[4][5]
VOE(TA) IP = 0 A, TA = 25°C –10 ±3 10 mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±5 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±10 20 mV
Electric Offset Voltage
Over Lifetime
[6] ΔVOE(LIFE)
TOP = –40°C to 150°C, estimated shift after AEC-Q100 grade 0
qualification testing – ±1 – mV
Total Output Error ETOT(HT) Measured using 33% of full scale IP
, TOP = 25°C to 150°C –3.25 ±0.8 3.25 %
ETOT(LT) Measured using 33% of full scale IP
, TOP = –40°C to 25°C –3.75 ±1.5 3.75 %
Total Output Error Including
Lifetime Drift
[7]
ETOT(HT,LIFE) Measured using 33% of full scale IP
, TOP = 25°C to 150°C –4.1 ±2.28 4.1 %
ETOT(LT,LIFE) Measured using 33% of full scale IP
, TOP = –40°C to 25°C –5.6 ±2.98 5.6 %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.
[3] ±3 sigma noise voltage.
[4] Drift is referred to ideal VOUT(QU) = 0.5 V.
[5] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.
[6] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[7] The maximum drift of any single device during qualification testing was 4%.
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
10
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
X150B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 125°C, VCC
= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP
Transient –150 – 150 A
Continuous –100 – 100 A
Sensitivity
[2]
SensTA Measured using 25% of full scale IP
, TA = 25°C 12.9 13.33 13.76 mV/A
Sens(TOP)HT Measured using 25% of full scale IP
, TOP = 25°C to 125°C 12.9 13.33 13.76 mV/A
Sens(TOP)LT Measured using 25% of full scale IP
, TOP = –40°C to 25°C 12.83 13.33 13.83 mV/A
Noise
[3]
VNOISEPP Peak to peak, TA= 25°C, 1 nF on VOUT pin to GND – 12 – mV
INOISE Input referred – 0.4 – mARMS
/√(Hz)
Nonlinearity ELIN measured using ±38 A and ±19 A –1 – 1 %
Electrical Offset Voltage
[4][5]
VOE(TA) IP = 0 A, TA = 25°C –10 ±3 10 mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C –10 ±5 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±10 20 mV
Electric Offset Voltage Over
Lifetime
[6] ΔVOE(LIFE)
TOP = –40°C to 125°C, estimated shift after AEC-Q100 grade 0
qualification testing – ±1 – mV
Total Output Error ETOT(HT) Measured using 25% of full scale IP
, TOP = 25°C to 125°C –3.25 ±0.8 3.25 %
ETOT(LT) Measured using 25% of full scale IP
, TOP = –40°C to 25°C –3.75 ±1.5 3.75 %
Total Output Error Including
Lifetime Drift
[7]
ETOT(HT,LIFE) Measured using 25% of full scale IP
, TOP = 25°C to 125°C –4.1 ±2.28 4.1 %
ETOT(LT,LIFE) Measured using 25% of full scale IP
, TOP = –40°C to 25°C –5.6 ±2.98 5.6 %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.
[3] ±3 sigma noise voltage.
[4] Drift is referred to ideal VOUT(QBI) = 2.5 V.
[5] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.
[6] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[7] The maximum drift of any single device during qualification testing was 4%.
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
11
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
X150U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 125°C, VCC
= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP
Transient 0 – 150 A
Continuous 0 – 100 A
Sensitivity
[2]
SensTA Measured using 25% of full scale IP
, TA = 25°C 25.8 26.66 27.53 mV/A
Sens(TOP)HT Measured using 25% of full scale IP
, TOP = 25°C to 125°C 25.79 26.66 27.53 mV/A
Sens(TOP)LT Measured using 25% of full scale IP
, TOP = –40°C to 25°C 25.66 26.66 27.66 mV/A
Noise
[3]
VNOISEPP Peak-to-peak, TA= 25°C, 1 nF on VOUT pin to GND – 24 – mV
INOISE Input referred – 0.4 – mARMS
/√(Hz)
Nonlinearity ELIN measured using 38 A and 19 A –1 – 1 %
Electrical Offset Voltage
[4][5]
VOE(TA) IP = 0 A, TA = 25°C –10 ±3 10 mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C –10 ±5 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±10 20 mV
Electric Offset Voltage Over
Lifetime
[6] ΔVOE(LIFE)
TOP = –40°C to 125°C, estimated shift after AEC-Q100 grade 0
qualification testing – ±1 – mV
Total Output Error ETOT(HT) Measured using 25% of full scale IP
, TOP = 25°C to 125°C –3.25 ±0.8 3.25 %
ETOT(LT) Measured using 25% of full scale IP
, TOP = –40°C to 25°C –3.75 ±1.5 3.75 %
Total Output Error Including
Lifetime Drift
[7]
ETOT(HT,LIFE) Measured using 25% of full scale IP
, TOP = 25°C to 125°C –4.1 ±2.28 4.1 %
ETOT(LT,LIFE) Measured using 25% of full scale IP
, TOP = –40°C to 25°C –5.6 ±2.98 5.6 %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.
[3] ±3 sigma noise voltage.
[4] Drift is referred to ideal VOUT(QU) = 0.5 V.
[5] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.
[6] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[7] The maximum drift of any single device during qualification testing was 4%.
Iv Camss Iv BVPAss CL mm H mm >0. “man. my; 337mm: ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
12
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA
DATA TAKEN USING THE ACS780KLR-150B
Response Time (tRESPONSE)
IP = 90 A with 10-90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 1 nF
Rise Time (tr)
IP = 90 A with 10%-90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 1 nF
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High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
13
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Propagation Delay (tPD)
IP = 90 A with 10% - 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 1 nF
Power-On Time (tPO)
IP = 60 A DC, CBYPASS = Open, CL = 1 nF
mnwm um mums AX 5591 us 21m «lax mum, mnmw may; 1M‘59um ALLEGRO' microsystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
14
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
UVLO Enable Time (tUVLOE)
IP = 0 A, CBYPASS = Open, CL = Open
VCC 5 V to 3 V fall time = 1 µs
UVLO Enable Time (tUVLOD)
IP = 0 A, CBYPASS = Open, CL = Open
VCC 3 V to 5 V recovery time = 1 µs
Phase [“J Magnitude [dB] ‘5 10 1o 3 104 ms Frequency [Hz] 750 7100 7150 10 1o 3 10 we Frequency [Hz] 10 ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
15
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE
ACS780 TYPICAL FREQUENCY RESPONSE
10
10
10
10
10
Frequency [Hz]
-15
-10
-5
Magnitude [dB]
10
10
10
10
10
Frequency [Hz]
-150
-100
-50
0
50
Phase [°]
ALL'EEEW'SQ
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
16
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Definitions of Accuracy Characteristics
CHARACTERISTIC DEFINITIONS
SENSITIVITY (Sens)
The change in device output in response to a 1 A change through
the primary conductor. The sensitivity is the product of the mag-
neticcircuitsensitivity(G/A)andthelinearICamplifiergain
(mV/G).ThelinearICamplifiergainisprogrammedatthefactory
to optimize the sensitivity (mV/A) for the half-scale current of the
device.
NOISE (VNOISE)
The noise floor is derived from the thermal and shot noise
observed in Hall elements. Dividing the noise (mV) by the sensi-
tivity (mV/A) provides the smallest current that the device is able
to resolve.
NONLINEARITY (ELIN)
The ACS780 is designed to provide a linear output in response
toarampingcurrent.Considertwocurrentlevels:I1andI2.Ide-
ally, the sensitivity of a device is the same for both currents, for
a given supply voltage and temperature. Nonlinearity is present
when there is a difference between the sensitivities measured at
I1 and I2. Nonlinearity is calculated separately for the positive
(ELINpos)andnegative(ELINneg)appliedcurrentsasfollows:
E
LINpos = 100 (%) × {1 – (SensIPOS2/ SensIPOS1
) }
E
LINneg = 100 (%) × {1 – (SensINEG2/ SensINEG1
)}
where:
SensIx = (VIOUT(Ix) – VIOUT(Q))/ Ix
and IPOSx and INEGx are positive and negative currents.
Then:
E
LIN=max(ELINpos,ELINneg )
RATIOMETRY
The device features a ratiometric output. This means that the
quiescent voltage output, VOUTQ, and the magnetic sensitivity,
Sens, are proportional to the supply voltage, VCC.The ratiometric
change(%)inthequiescentvoltageoutputisdefinedas:
VCC 5 V
VOUT(Q)(V
CC
)VOUT(Q)(5V)
RatERRVOUT(Q)=× 100%
1 –
()
andtheratiometricchange(%)insensitivityisdefinedas:
VCC 5 V
Sens(VCC)Sens(5V)
RatERRSens =× 100%
1 –
()
QUIESCENT OUTPUT VOLTAGE (VOUT(Q))
Theoutputofthedevicewhentheprimarycurrentiszero.For
bidirectional sensors, it nominally remains at VCC⁄2andforuni-
directional sensors at 0.1 × VCC. Thus, VCC = 5 V translates into
VOUT(BI) = 2.5 V and VOUT(QU) = 0.5 V. Variation in VOUT(Q)can
be attributed to the resolution of the Allegro linear IC quiescent
voltage trim and thermal drift.
ELECTRICAL OFFSET VOLTAGE (VOE)
The deviation of the device output from its ideal quiescent value
due to nonmagnetic causes.
TOTAL OUTPUT ERROR (ETOT)
The maximum deviation of the actual output from its ideal value,
also referred to as accuracy, illustrated graphically in the output
voltage versus current chart on the following page.
ETOTisdividedintofourareas:
• 0 A at 25°C. Accuracy at the zero current flow at 25°C,
without the effects of temperature.
• 0 A over Δ temperature. Accuracy at the zero current flow
including temperature effects.
• Full-scale current at 25°C. Accuracy at the full-scale current at
25°C, without the effects of temperature.
• Full-scale current over Δ temperature. Accuracy at the full-
scale current flow including temperature effects.
=× 100 (%)
ETOT(IP)
VIOUT(IP) – VIOUT_IDEAL(IP)
SensIDEAL × IP
where
VIOUT_IDEAL(IP) = VIOUT(Q)+ (SensIDEAL × IP )
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High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
17
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
DEFINITIONS OF DYNAMIC RESPONSE CHARACTERISTICS
POWER-ON TIME (tPO)
When the supply is ramped to its operating voltage, the device
requires a finite time to power its internal components before
responding to an input magnetic field.
Power-OnTime,tPO, is defined as the time it takes for the output
voltage to settle within ±10% of its steady state value under an
applied magnetic field, after the power supply has reached its
minimum specified operating voltage, VCC(min), as shown in the
chart at right.
RISE TIME (tr)
The time interval between a) when the device reaches 10% of its
full scale value, and b) when it reaches 90% of its full scale value.
Bothtr and tRESPONSE are detrimentally affected by eddy current
losses observed in the conductive IC ground plane.
RESPONSE TIME (tRESPONSE)
The time interval between a) when the applied current reaches
80% of its final value, and b) when the sensor reaches 80% of its
output corresponding to the applied current.
PROPAGATION DELAY (tPD)
The time interval between a) when the input current reaches 20%
of its final value, and b) when the output reaches 20% of its final
value.
POWER-ON RESET VOLTAGE (VPOR )
At power-up, to initialize to a known state and avoid current
spikes, the sensor is held in Reset state. The Reset signal is
disabled when VCC reaches VUVLOH and time tPORR has elapsed,
allowing output voltage to go from a high-impedance state
into normal operation. During power-down, the Reset signal is
enabled when VCC reaches VPORL , causing output voltage to go
into a high-impedance state. (Note that a detailed description
ofPORandUVLOoperationcanbefoundintheFunctional
Description section.)
Power-On Time (tPO)
Propagation Delay (tPD) and Rise Time (tr)
Response Time (tRESPONSE)
Primary Current
VOUT
90
10
20
0
(%)
Propagation Delay, tPROP
Rise Time, tr
t
Primary Current
VOUT
80
0
(%)
Response Time, tRESPONSE
t
LLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
18
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
POWER-ON RESET RELEASE TIME (tPORR)
When VCC rises to VPORH,thePower-OnResetCounterstarts.
The sensor output voltage will transition from a high-impedance
statetonormaloperationonlywhenthePower-OnResetCounter
has reached tPORR and VCC has exceeded VUVLOH .
UNDERVOLTAGE LOCKOUT THRESHOLD (VUVLO )
If VCC drops below VUVLOL , output voltage will be locked to
GND.IfVCC starts rising, the sensor will come out of the locked
state when VCC reaches VUVLOH .
UVLO ENABLE/DISABLE RELEASE TIME (tUVLO )
When a falling VCC reaches VUVLOL , time tUVLOE is required
toengageUndervoltageLockoutstate.WhenVCC rises above
VUVLOH , time tUVLODisrequiredtodisableUVLOandhavea
valid output voltage.
Increasing VIOUT
(V)
+IP (A)
Accuracy
Accuracy
Accuracy
25°C Only
Accuracy
25°C Only
Accuracy
25°C Only
Accuracy
0 A
v rO e ∆Temp erature
Average
VIOUT
–IP (A)
v rO e ∆Temp erature
v rO e ∆Temp erature
Decreasing VIOUT
(V)
IP(min)
IP(max)
Half Scale
Output Voltage versus Sampled Current
Total Output Error at 0 A and at Full-Scale Current
,T,T, ,,,, ‘UVLOE‘a—d mwcrosystems .O R G E L L A
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
19
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
FUNCTIONAL DESCRIPTION
Power-On Reset (POR) and Undervoltage
Lock-Out (UVLO) Operation
Thedescriptionsinthissectionassume:temperature=25°C,no
output load (RL, CL
) , and no significant magnetic field is present.
• Power-Up At power-up, as VCC ramps up, the output is in a
high-impedance state. When VCC crosses VPORH (location [1]
inFigure1and[1’]inFigure2),thePORReleasecounter
starts counting for tPORR. At this point, if VCC exceeds VUVLOH
[2’],theoutputwillgotoVCC / 2 after tUVLOD=14µs[3’].If
VCC does not exceed VUVLOH [2], the output will stay in the
high-impedance state until VCC reaches VUVLOH[3]andthen
will go to VCC / 2 after tUVLOD[4].
• VCC drops below VCC(min)= 4.5 V If VCC drops below
VUVLOL[4’,5],theUVLOEnableCounterstartscounting.If
VCC is still below VUVLOL when counter reaches tUVLOE, the
UVLOfunctionwillbeenabledandtheouputwillbepulled
nearGND[6].IfVCC exceeds VUVLOLbeforetheUVLO
EnableCounterreachestUVLOE[5’],theoutputwillcontinue
to be VCC
/ 2.
Figure 2: POR and UVLO Operation – Fast Rise Time case
tUVLOE
tPORR
tPORR
tUVLOD
< tUVLOE
tUVLOD
tUVLOD
t
UVLOE
1
1’ 2’ 4’ 5’ 6’ 7’
3’
2
5.0
VUVLOH
VUVLOH
VPORH
VPORL
VPORH
VPORL
VUVLOL
VUVLOL
2.5
High Impedance High Impedance
High Impedance High Impedance
Slope =
VCC /
2
Slope =
VCC /
2
GND
Time
Time
Time
Time
GND
V
CC
V
CC
V
OUT
5.0
2.5
GND
GND
V
OUT
3567
11
8
10
9
4
Slope =
VCC /
2
<
tUVLOE
Figure 1: POR and UVLO Operation – Slow Rise Time case
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
20
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
• Coming out of UVLOWhileUVLOisenabled[6],ifVCC
exceeds VUVLOH[7],UVLOwillbedisabledaftertUVLOD
,
and the output will be VCC / 2 [8].
• Power-Down As VCC ramps down below VUVLOL[6’,9],the
UVLOEnableCounterwillstartcounting.IfVCC is higher
than VPORL when the counter reaches tUVLOE
,theUVLO
function will be enabled and the ouput will be pulled near
GND[10].Theoutputwillenterahigh-impedancestateas
VCC goes below VPORL [11]. If VCC falls below VPORL before
theUVLOEnableCounerreachestUVLOE , the output will
transitiondirectlyintoahigh-impedancestate[7’].
EEPROM Error Checking And Correction
HammingcodemethodologyisimplementedforEEPROM
checkingandcorrection.ThedevicehasECCenabledafter
power-up.Ifanuncorrectableerrorhasoccurred,theVOUTpin
will go to high impedance and the device will not respond to
applied magnetic field.
“my mm systems mxcro LLEGRO'
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
21
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Chopper Stabilization Technique
Amp
Regulator
Clock/Logic
Hall Element
Tuned
Filter
Anti-Aliasing
LP Filter
Concept of Chopper Stabilization Technique
When using Hall-effect technology, a limiting factor for
switchpoint accuracy is the small signal voltage developed across
the Hall element. This voltage is disproportionally small relative
to the offset that can be produced at the output of the Hall sensor
IC. This makes it difficult to process the signal while maintaining
an accurate, reliable output over the specified operating tempera-
ture and voltage ranges.
Chopper stabilization is a unique approach used to minimize
Hall offset on the chip. Allegro employs a technique to remove
key sources of the output drift induced by thermal and mechani-
cal stresses. This offset reduction technique is based on a signal
modulation-demodulation process. The undesired offset signal is
separated from the magnetic field-induced signal in the frequency
domain, through modulation. The subsequent demodulation acts
as a modulation process for the offset, causing the magnetic field-
induced signal to recover its original spectrum at baseband, while
the DC offset becomes a high-frequency signal. The magnetic-
sourced signal then can pass through a low-pass filter, while the
modulated DC offset is suppressed.
In addition to the removal of the thermal and stress-related offset,
this novel technique also reduces the amount of thermal noise
in the Hall sensor IC while completely removing the modulated
residue resulting from the chopper operation. The chopper sta-
bilizationtechniqueusesahigh-frequencysamplingclock.For
demodulation process, a sample-and-hold technique is used. This
high-frequency operation allows a greater sampling rate, which
results in higher accuracy and faster signal-processing capability.
This approach desensitizes the chip to the effects of thermal and
mechanical stresses, and produces devices that have extremely
stable quiescent Hall output voltages and precise recoverabil-
ity after temperature cycling. This technique is made possible
throughtheuseofaBiCMOSprocess,whichallowstheuseof
low-offset, low-noise amplifiers in combination with high-density
logic integration and sample-and-hold circuits.
ALLEGRO' mxcrosystems |_
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
22
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APPLICATION-SPECIFIC INFORMATION
Field from Nearby Current Path
TobestusetheCMRcapabilitiesofthesedevices,thecircuit
board containing the ICs should be designed to make the external
magnetic fields on both Hall plates equal. This helps to minimize
error due to external fields generated by the current-carrying
PCBtracesthemselves.Therearethreemainparametersforeach
current-carrying trace that determine the error that it will induce
onanIC:distance from the IC, width of the current-carrying
conductor, and the anglebetweenitandtheIC.Figure3shows
an example of a current-carrying conductor routed near an IC.
The distance between the device and the conductor, d, is the
distance from the device center to the center of the conductor.
The width of the current path is w. The angle between the device
and the current path, θ, is defined as the angle between a straight
line connecting the two Hall plates and a line perpendicular to the
current path.
d
H1
H2
θ
I
w
Figure 3: ACS780 with nearby current path, viewed
from the bottom of the sensor
Whenitisnotpossibletokeepθcloseto90°,thenextbest
option is to keep the distance from the current path to the current
sensor IC, d, as large as possible. Assuming that the current path
isattheworst-caseangleinrelationtotheIC,θ=0°or180°,the
equation:
Error =
2 × I
Cf
×
1
d – 2
Hspace × cosθ
┌
│
│
│
└
–
1
d + 2
Hspace × cosθ
┐
│
│
│
┘
where Hspace is the distance between the two Hall plates and Cf is
the coupling factor of the IC. This coupling factor varies between
the different ICs. The ACS780 has a coupling factor of 5 to 5.5
G/A,whereasotherAllegroICscanrangefrom10to15G/A.
Other Layout Practices to Consider
When laying out a board that contains an Allegro current sensor
ICwithCMR,thedirectionandproximityofallcurrent-carrying
paths are important, but they are not the only factors to consider
whenoptimizingICperformance.Othersourcesofstrayfields
that can contribute to system error include traces that connect to
theIC’sintegratedcurrentconductor,aswellasthepositionof
nearby permanent magnets.
The way that the circuit board connects to a current sensor IC
must be planned with care. Common mistakes that can impact
performanceare:
• The angle of approach of the current path to the IP pins
• ExtendingthecurrenttracetoofarbeneaththeIC
THE ANGLE OF APPROACH
OnecommonmistakewhenusinganAllegrocurrentsensorICis
tobringthecurrentinfromanundesirableangle.Figure4shows
an example of the approach of the current traces to the IC (in this
case, the ACS780). In this figure, traces are shown for IP+ and
IP–. The light green region is the desired area of approach for the
current trace going to IP+. This region is from 0° to 85°. This rule
applies likewise for the IP– trace.
The limitation of this region is to prevent the current-carrying
trace from contributing any stray field that can cause error on
the IC output. When the current traces connected to IP are outside
thisregion,theymustbetreatedasdiscussedabove(Fieldfroma
Nearby Current Path).
ALLEGRO" microsvstems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
23
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Figure 4: ACS780 Current Trace Approach – the desired
range of the angle θ is from 0° to 85°
ENCROACHMENT UNDER THE IC
In the LR package, the encroachment of the current-carrying
trace under the device actually changes the path of the current
flowing through the IP bus. This can cause a change in the cou-
pling factor of the IP bus to the IC and can significantly reduce
deviceperformance.UsingANSYSMaxwellElectromagnetic
Suites, the current density and magnetic field generated from the
currentflowweresimulated.InFigure5,thereareresultsfrom
two different simulations. The first is the case where the current
trace leading up to the IP bus terminates at the desired point. The
second case is where the current trace encroaches far up the IP
bus. The red arrows in both simulations represent the areas of
high current density. In the simulation with no excess overlap, the
red areas, and hence the current density, are very different from
the simulation with the excess overlap. It was also observed that
the field on H1 was larger when there was no excess overlap.
This can be observed by the darker shade of blue.
Figure 5: Simulations of ACS780 Leadframe with Differ-
ent Overlap of the Current Trace and the IP Bus
<7660fl1fl a="" 1'1="" c="" uuu="" 21="" :="" suppheremmem="" v="" ‘="" \="" \="" standard="" branding="" relerence="" view="" t77="" n="" \="" 5="" i'="" m="" m="" apcb="" layom="" reflevenw="" vwew="" b©b="">% go I +§fi \ m“ ALLEGRO' mwcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
24
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Package LR, 7-Pin PSOF Package
PACKAGE OUTLINE DRAWING
C
= Supplier emblem
= Last three numbers of device part number
= Last two digits of year of manufacture
= Week of manufacture
= Lot identifier
N
Y
W
L
Standard Branding Reference View
LLLLLLL
NNN
YYWW
1
7
A
B
C
Dambar removal protrusion (16×)
Terminal #1 mark area
Branding scale and appearance at supplier discretion
DHall elements (D1 and D2); not to scale
E
0.88
B
A
1
1
2
2
7
7
6.40 ±0.10
1.79 ±0.10 ×2
1.41 ×2
1.60 ±0.10 ×2
2.99 ±0.10
1.37 ±0.20
1.56 ±0.20
3.06 ±0.20
4.80 ±0.10
0.38 ±0.10 ×2
0.38 ±0.10 ×3
0.81 ±0.10 ×2
0.02
12º ±2º ×2
5º ±2º ×2
1.50 ±0.10
Branded Face
A
+0.03
-0.02 SEATING
PLANE
12º ±2º ×2
12º ±2º ×2
5º ±2º ×2
5º ±2º ×2
Parting Line
0.38+0.05
–0.03
(Plating Included)
0.70 ±0.10
1.37 ±0.10 ×2
0.90 ±0.10 ×2
0.28 ×2
0.50 ×2
R0.97 ±0.05
R0.25 ±0.05
R0.50 ×2
DD1
D2
6.40 ±0.10
0.80 ±0.10
0.81
×2
For Reference Only, not for tooling use (DWG-0000428)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
2
1
7
3.00
0.9
5.60
0.50
4.80
E
1.80 MIN
0.60
Reference land pattern layout;
All pads a minimum of 0.20 mm from all adjacent pads; adjust as
necessary to meet application process requirements and PCB
layout tolerances
1.60
PCB Layout Reference View
0.90
0.80
2.40
3
4
5
6
0.90
0.70
ALLEGRO' mxcrosystems
High-Precision Linear Hall-Effect-Based
Current Sensor IC With 200 µΩ Current Conductor
ACS780xLR
25
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
For the latest version of this document, visit our website:
www.allegromicro.com
REVISION HISTORY
Number Date Description
– September 20, 2016 Initial release
1 August 14, 2017 Added Typical Frequency Response charts (p. 15)
2 October 23, 2017 Corrected Package Outline Drawing and Nonlineary test conditions
3 January 30, 2018 Added EEPROM Error Checking and Correction section (page 20)
4 February 7, 2019 Minor editorial updates
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