2N7002DW Datasheet by onsemi

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0N Semiconductor® www.0nsemi.com
© Semiconductor Components Industries, LLC, 2007
June, 2020 Rev. 3
1Publication Order Number:
2N7002DW/D
Field Effect Transistor -
N-Channel, Enhancement
Mode
2N7002DW
Features
Dual NChannel MOSFET
Low OnResistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
UltraSmall Surface Mount Package
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Units
VDSS DrainSource Voltage 60 V
VDGR DrainGate Voltage (RGS 1.0 MW)60 V
VGSS GateSource Voltage Continuous ±20 V
Pulsed ±40
IDDrain Current Continuous 115 mA
Continuous
at 100°C
73
Pulsed 800
TJ, TSTG Junction and Storage Temperature
Range
55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
PDTotal Device Dissipation 200 mW
Derate Above TA = 25°C 1.6 mW/°C
RqJA Thermal Resistance, JunctiontoAmbient (Note 1) 415 _C/W
1. Device mounted on FR4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
SC88/SC706/SOT363
CASE 419B02
www.onsemi.com
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
2N = Specific Device Code
M = Assembly Operation Month
MARKING DIAGRAM
2NM
PIN CONNECTIONS
1
G1D2 S1
G2S2 D1
1
www.cnsemi.com osv AW
2N7002DW
www.onsemi.com
2
ORDERING INFORMATION
Part Number Top Mark Package Shipping
2N7002DW 2N SC706
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS (Note 2)
BVDSS DrainSource Breakdown Voltage VGS =0V, I
D=10 mA60 78 V
IDSS Zero Gate Voltage Drain Current VDS =60V, V
GS =0V 0.001 1.0 mA
VDS =60V, V
GS =0V, T
J = 125_C7 500
IGSS GateBody Leakage VGS =±20 V, VDS =0V 0.2 ±10 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS =V
GS, ID= 250 mA1.00 1.76 2.0 V
RDS(on) Static DrainSource
OnResistance
VGS =5V, I
D= 0.05 A 1.6 7.5 W
VGS =10V, I
D= 0.5 A 2.0
VGS =10V, I
D= 0.5 A, TJ = 125_C2.53 13.5
ID(on) OnState Drain Current VGS =10V, V
DS = 7.5 V 0.50 1.43 A
gFS Forward Transconductance VDS =10V, I
D= 0.2 A 80.0 356.5 mS
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS =25V, V
GS = 0 V, f = 1.0 MHz 37.8 50 pF
Coss Output Capacitance 12.4 25 pF
Crss Reverse Transfer Capacitance 6.5 7 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(ON) Turn-On Delay Time VDD =30V, I
D= 0.2 A, VGEN =10V,
RL= 150 W, RGEN =25W
5.85 20 ns
tD(OFF) Turn-Off Delay Time 12.5 20 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Short duration test pulse used to minimize selfheating effect.
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. OnRegion Characteristics Figure 2. OnResistance Variation with
Gate Voltage and Drain Current
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2 V
3 V
4 V
5 V
VGS
= 10 V
ID, DRAINSOURCE CURRENT (A)
VDS ,DRAINSOURCE VOLTAGE (V)
0.2 0.4 0.6 0.8 1.0
1.0
1.5
2.0
2.5
3.0
9 V
8 V
5 V
6 V
10 V
7 V
4 V 4.5 V
VGS
= 3 V
RDS (on), DRAINSOURCE
ONRESISTANCE ( )
ID, DRAINSOURCE CURRENT (A)
W
1234567 8910 0.0
// www.0nsem iiii
2N7002DW
www.onsemi.com
3
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
50 0 50 100 150
0.5
1.0
1.5
2.0
2.5
3.0
VGS
= 10 V
ID
= 500 mA
210
1.0
1.5
2.0
2.5
3.0
ID
= 500 mA
ID
= 50 mA
0.0
0.2
0.4
0.6
0.8
1.0
VDS = 10 V
75 C
125 C
150 C
25 C
TJ = 25°C
50 0 50 100 150
1.0
1.5
2.0
2.5
ID
= 0.25 mA
ID
= 1 mA
VGS
= VDS
VOLTAGE (V)
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
55 C
VGS = 0 V
150 C
25 C
0
40
80
120
160
200
240
280
P
C, POWER DISSIPATION (mW)
TJ, JUNCTION TEMPERATURE (°C)
Ta, AMBIENT TEMPERATURE ( °C)
VGS, GATE TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
VSD, BODY DIODE FORWARD VOLTAGE (V)
ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (mA)
RDS (on), DRAINSOURCE
ONRESISTANCE ( )
W
RDS (on), DRAINSOURCE
ONRESISTANCE ( )
W
Vth , GATESOURCE THRESHOLD
Figure 3. OnResistance Variation with
Temperature
Figure 4. OnResistance Variation with
GateSource Voltage
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
Figure 7. Reverse Drain Current Variation
with Diode Forward Voltage and Temperature
Figure 8. Power Derating
468
°
°
°
°
°
°
°
0 25 50 75 100 125 150 175
23456
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SC88/SC706/SOT363
CASE 419B02
ISSUE Y
DATE 11 DEC 2012
SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X
XXXMG
G
XXX = Specific Device Code
M = Date Code*
G= PbFree Package
GENERIC
MARKING DIAGRAM*
1
6
STYLES ON PAGE 2
1
DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42985B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
SC88/SC706/SOT363
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 3:
CANCELLED
STYLE 2:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
DATE 11 DEC 2012
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42985B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
SC88/SC706/SOT363
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
www.onsemi.com
1
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