NT3H2111, NT3H2211 Datasheet by NXP USA Inc.

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NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password
protection and energy harvesting
Rev. 3.5 — 7 May 2019 Product data sheet
359935 COMPANY PUBLIC
1 General description
Designed to be the perfect enabler for NFC in home-automation and consumer
applications, this feature-packed, second-generation connected NFC tag is the fastest,
least expensive way to add tap-and-go connectivity to just about any electronic device.
NXP NTAG I2C plus is a family of connected NFC tags that combine a passive NFC
interface with a contact I2C interface. As the second generation of NXP’s industry leading
connected-tag technology, these devices maintain full backward compatibility with first-
generation NTAG I2C products, while adding new, advanced features for password
protection, full memory-access configuration from both interfaces, and an originality
signature for protection against cloning.
The second-generation technology provides four times higher pass-through performance,
along with energy harvesting capabilities, yet NTAG I2C plus devices are optimized for
use in entry-level NFC applications and offer the lowest BoM of any NFC solution.
I2C and NFC communications are based on simple, standard command sets, and are
augmented by the demo board OM5569/NT322E, which includes online reference source
code. All that is required is a simple antenna design (see Ref. 5), with no or only limited
extra components, and there are plenty of reference designs online for inspiration. NTAG
I2C plus development board is certified as NFC Forum Type 2 Tag (Certification ID:
58514).
aaa-030257
SRAM I2C
01 1 0 1 0
EEPROM
Energy harvesting
Event detection
Data
ISO/
I
EC
144
43
Energy
Data
Energy
MCU
Figure 1. Contactless and contact system
NT3H2111_2211 develop Ref. 1 Ref. 2
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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2 Features and benefits
2.1 Key features
Interoperability
ISO/IEC 14443 Part 2 and 3 compliant
NTAG I2C plus development board is certified as NFC Forum Type 2 Tag
(Certification ID: 58514)
Unique 7 byte UID
GET_VERSION command for easy identification of chip type and supported features
Input capacitance of 50 pF
Host interface
I2C slave
Configurable field detection pin based on open-drain implementation to signal NFC
events or synchronize pass-through data transfer
Memory
2k bytes EEPROM
64 bytes SRAM buffer for transfer of data between NFC and I2C interfaces with
memory mirror or pass-through mode
Clear arbitration between NFC and I2C memory access
Data transfer
Pass-through mode with 64 byte SRAM buffer
FAST_WRITE and FAST_READ NFC commands for higher data throughput
Security and memory-access management
Full, read-only, or no memory access from NFC interface, based on 32-bit password
Full, read-only, or no memory access from I2C interface
NFC silence feature to disable the NFC interface
Originality signature based on Elliptic Curve Cryptography (ECC) for simple, genuine
authentication
Power Management
Configurable field-detection output signal for data-transfer synchronization and
device wake-up
Energy harvesting from NFC field, so as to power external devices (e.g. connected
microcontroller)
Industrial requirements
Temperature range from -40 °C up to 105 °C
2.2 NFC interface
Contactless transmission of data at 106 kbps
NTAG I2C plus development board is certified as NFC Forum Type 2 Tag (Certification
ID: 58514) (see Ref. 1)
ISO/IEC 14443A compliant (see Ref. 2)
Data transfer of 106 kbit/s
4 bytes (one page) written including all overhead in 4.8 ms via EEPROM or 0.8 ms via
SRAM
64 bytes (whole SRAM) written including all overhead in 6.1 ms using FAST_WRITE
command
NT3H2111_2211 Ref. 2 Section 13.1
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NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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Product data sheet Rev. 3.5 — 7 May 2019
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Data integrity of 16-bit CRC, parity, bit coding, bit counting
Operating distance of up to 100 mm (depending on various parameters, such as field
strength and antenna geometry)
True anticollision
Unique 7-byte serial number (UID) according to ISO/IEC 14443-3 (see Ref. 2)
2.3 Memory
2k bytes EEPROM
64 bytes SRAM volatile memory without write endurance limitation
Data retention time of minimum 20 years
EEPROM write endurance minimum 500.000 cycles
2.4 I2C interface
I2C slave interface supports frequencies up to 400 kHz (see Section 13.1)
Fail safe I2C operation
I2C slave supports 7-bit slave address.
As the least significant R/W bit is used to indicate data transfer direction, default slave
address 55h recalculates to an I²C write address AAh and an I²C read address ABh
respectively.
16 bytes (one block) written in 4 ms (EEPROM) or 0.4 ms (SRAM)
NTAG I2C plus can be used as standard I2C EEPROM and I2C SRAM
2.5 Security
Manufacturer-programmed 7-byte UID for each device
Capability container with one time programmable bits
Field programmable read-only locking function per page for first 12 pages and per 16
(1k version) or 32 (2k version) pages for the extended memory section
ECC-based originality signature
32-bit password protection to prevent unauthorized memory operations from NFC
perspective may be enabled for parts of, or complete memory
Access to password protected data area may be restricted from I2C perspective
Pass-through and mirror mode operation may be password protected
Protected data can be safeguarded against limited number of negative password
authentication attempts
2.6 Key benefits
Full interoperability with every NFC-enabled device
Smooth end-user experience with super-fast data exchange (up to 40 kbit/s) via NFC
and I2C interface
Zero-power operation with non-volatile data storage
Energy harvesting feature delivers up to 15 mW out of NFC field to power (parts of)
host system
Data protection to prevent unauthorized data manipulation
Multi-application support, enabled by memory size and segmentation options
Lowest bill of materials and smallest footprint for NFC solution in embedded electronics
NT3H2111_2211
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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Product data sheet Rev. 3.5 — 7 May 2019
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3 Applications
NXP NTAG I2C plus is a family of connected NFC tags that combine a passive NFC
interface with a contact I2C interface. As the second generation of NXP’s industry-leading
connected-tag technology, these devices maintain full backward compatibility with first-
generation NTAG I2C products, while adding new, advanced features for password
protection, full memory-access configuration from both interfaces, and an originality
signature for protection against cloning.
The second-generation technology provides four times higher pass-through performance,
along with energy harvesting capabilities, yet NTAG I2C plus devices are optimized for
use in NFC applications like:
IoT nodes (home automation, smart home, etc.)
Pairing and configuration of consumer applications
NFC accessories (headsets, speakers, etc.)
Wearable infotainment
Fitness equipment
Consumer electronics
Healthcare
Smart printers
Meters
Electronic shelf labels
NT3H2111_2211 Table 1. Ordering information
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4 Ordering information
Table 1. Ordering information
PackageType number
Name Description Version
NT3H2111W0FHK XQFN8 Plastic, extremely thin quad flat package; no leads; 8 terminals; body 1.6 x
1.6 x 0.5 mm; 1k bytes memory, 50 pF input capacitance
SOT902-3
NT3H2211W0FHK XQFN8 Plastic, extremely thin quad flat package; no leads; 8 terminals; body 1.6 x
1.6 x 0.5 mm; 2k bytes memory, 50 pF input capacitance
SOT902-3
NT3H2111W0FTT TSSOP8 Plastic thin shrink small outline package; 8 leads; body width 3 mm; 1k
bytes memory; 50 pF input capacitance
SOT505-1
NT3H2211W0FTT TSSOP8 Plastic thin shrink small outline package; 8 leads; body width 3 mm; 2k
bytes memory; 50 pF input capacitance
SOT505-1
NT3H2111W0FT1 SO8 Plastic small outline package; 8 leads; body width 3.9 mm, 1k bytes
memory; 50 pF input capacitance
SOT96-1
NT3H2211W0FT1 SO8 Plastic small outline package; 8 leads; body width 3.9 mm, 2k bytes
memory; 50 pF input capacitance
SOT96-1
NT3H2111W0FUG FFC
bumped
8 inch wafer, 150um thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps, 1k Bytes memory, 50 pF
input capacitance
-
NT3H2211W0FUG FFC
bumped
8 inch wafer, 150um thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps, 2k Bytes memory, 50 pF
input capacitance
-
REMARK: Wafer specification addendum is available after exchange of a non-disclosure agreement (NDA)
NT3H2111_2211 Table 2. Marking codes
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NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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5 Marking
Table 2. Marking codes
Marking code
Type number Line 1 Line 2 Line 3
NT3H2111W0FHK 211 - -
NT3H2211W0FHK 221 - -
NT3H2111W0FTT 32111 DBSN ASID YWW
NT3H2211W0FTT 32211 DBSN ASID YWW
NT3H2111W0FT1 NT32111 DBSN ASID nDYWW
NT3H2211W0FT1 NT32211 DBSN ASID nDYWW
Used abbreviations:
DBSN: Diffusion Batch Sequence Number
ASID: Assembly Sequence ID
n: Assembly Centre Code
D: RHF-2006 indicator
Y: year
WW: week
NT3H2111_2211
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NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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6 Block diagram
aaa-010358
I2C
SLAVE
I2C
CONTROL
RF
INTERFACE
LA
LB
POWER MANAGEMENT/
ENERGY HARVESTING
DIGITAL CONTROL UNIT MEMORY
EEPROM
SRAM
ARBITER/STATUS
REGISTERS
ANTICOLLISION
COMMAND
INTERPRETER
MEMORY
INTERFACE
SDA
SCL
GND
FD
VoutVCC
Figure 2. Block diagram
NT3H2111_2211 3534121647 Sec1ion 17 C 0 j I: :I I: :I I: :I “5.921549 Sec1ion 17 I: :I I: :I I: :I I: :I ass-021549 Sec1ion 17
NXP Semiconductors NT3H2111_2211
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7 Pinning information
7.1 Pinning
7.1.1 XQFN8
aaa-021647
FD
Transparent top view
4
8
6
5
7
3
1
2VSS
LA
SCL
LB
VCC
SDA
VOUT
Figure 3. Pin configuration for XQFN8
Detailed package and soldering information may be found in Section 17.
7.1.2 TSSOP8
aaa-021648
SDA
VCC
VOUT
LB
FD
SCL
VSS
LA 1
2
3
4
6
5
8
7
Figure 4. Pin configuration for TSSOP8
Detailed package and soldering information may be found in Section 17.
7.1.3 SO8
LA LB
VSS VOUT
SCL VCC
FD SDA
aaa-021649
1
2
3
4
6
5
8
7
Figure 5. Pin configuration for SO8
Detailed package and soldering information may be found in Section 17.
NT3H2111_2211 Table 3. Pin description for XQFNS, TSSOPS and 508
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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7.2 Pin description
Table 3. Pin description for XQFN8, TSSOP8 and SO8
Pin Symbol Description
1 LA Antenna connection LA
2 VSS GND
3 SCL Serial clock I2C
4 FD Field detection
5 SDA Serial data I2C
6 VCC VCC in connection (external power supply)
7 VOUT Voltage out (energy harvesting)
8 LB Antenna connection LB
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NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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8 Functional description
8.1 Block description
NTAG I2C plus ICs consist of EEPROM, SRAM, NFC interface, Digital Control Unit
(Command interpreter, Anticollision, Arbiter/Status registers, I2C control and Memory
Interface), Power Management and Energy Harvesting Unit and an I2C slave interface.
Energy and data are transferred via an antenna consisting of a coil with a few turns,
which is directly connected to NTAG I2C plus IC.
8.2 NFC interface
The passive NFC-interface is based on the ISO/IEC 14443-3 Type A standard.
It requires to be supplied by an NFC field (e.g. NFC enabled device) always to be able to
receive appropriate commands and send the related responses.
As defined in ISO/IEC 14443-3 Type A for both directions of data communication, there
is one start bit (start of communication) at the beginning of each frame. Each byte is
transmitted with an odd parity bit at the end. The least significant bit of the byte 0 of the
selected block is transmitted first.
For a multi-byte parameter, the least significant byte is always transmitted first. For
example, when reading from the memory using the READ command, byte 0 from the
addressed block is transmitted first, followed by bytes 1 to byte 3 out of this block. The
same sequence continues for the next block and all subsequent blocks.
8.2.1 Data integrity
The following mechanisms are implemented in the contactless communication link
between the NFC device and the NTAG I2C plus IC to ensure very reliable data
transmission:
16 bits CRC per block
Parity bits for each byte
Bit count checking
Bit coding to distinguish between "1", "0" and "no information"
Channel monitoring (protocol sequence and bit stream analysis)
The commands are initiated by the NFC device and controlled by the Digital Control Unit
of the NTAG I2C plus IC. The command response depends on the state of the IC, and for
memory operations, the access conditions valid for the corresponding page.
NT3H2111_2211 C) éi /\ ANT /\ ANT Figure 6 ass-021550
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8.2.2 NFC state machine
PWD_AUTH
SELECT
cascade level 2
SELECT
cascade level 1
WUPA REQA
WUPA
READY 1
READY 2
ACTIVE
AUTHENTICATED
IDLEHALT
POR
ANTICOLLISION
L
T
A
H
L
T
A
memory
operations
identification
and
selection
procedure
aaa-021650
READ
FAST_READ
WRITE
FAST_WRITE
GET_VERSION
READ_SIG
ANTICOLLISION
READ
FAST_READ
WRITE
PWD_AUTH
GET_VERSION
READ_SIG
Figure 6. NFC state machine of NTAG I2C plus
The overall NFC state machine is summarized in Figure 6. When an error is detected or
an unexpected command is received, in each state the tag returns to IDLE or HALT state
as defined in ISO/IEC 14443-3 Type A.
8.2.2.1 IDLE state
After a Power-On Reset (POR), the NTAG I2C plus switches to the default waiting state,
namely the IDLE state. It exits IDLE towards READY 1 state when a REQA or a WUPA
command is received from the NFC device. Any other data received while in IDLE state
is interpreted as an error, and the NTAG I2C plus remains in the IDLE state.
8.2.2.2 READY 1 state
In the READY 1 state, the NFC device resolves the first part of the UID (3 bytes) using
the ANTICOLLISION or SELECT commands for cascade level 1. READY 1 state is
correctly exited after.
NT3H2111_2211
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receiving SELECT command from cascade level 1 with the matching of complete first
part of the UID. In this case, the NFC device switches the NTAG I2C plus into READY 2
state where the second part of the UID gets resolved.
Remark: The response of the NTAG I2C plus to the SELECT command is the Select
AcKnowledge (SAK) byte with cascade bit set to 1b indicating that UID is not complete.
8.2.2.3 READY 2 state
In the READY 2 state, the NFC device resolves the second part of the UID (4 bytes)
using the ANTICOLLISION or SELECT command for cascade level 2. READY2 state is
correctly exited after.
receiving SELECT command from cascade level 2 with the matching of complete
second part of the UID. In this case, the NFC device switches the NTAG I2C plus into
ACTIVE state where all application-related commands can be executed.
Remark: The response of the NTAG I2C plus to the SELECT command in READY 2
state is the Select AcKnowledge (SAK) byte with cascade bit cleared to indicate, that
NTAG I2C plus is now uniquely selected and only this device will communicate with the
NFC device even when other contactless devices are present in the NFC device field.
8.2.2.4 ACTIVE state
All unprotected memory operations are operated in the ACTIVE and AUTHENTICATED
states.
The ACTIVE state is exited with the PWD_AUTH command or with the HLTA command.
Upon reception of a correct password within PWD_AUTH command, the NTAG I2C plus
transits to AUTHENTICATED state after responding with PACK.
With the HLTA command, the NTAG I2C plus transits to the HALT state.
Any other invalid command in ACTIVE state is interpreted as an error. Depending on its
previous state, the NTAG I2C plus returns to either to the IDLE or HALT state.
8.2.2.5 AUTHENTICATED state
Protected memory operations are only operated in the AUTHENTICATED state, however
access to the unprotected memory is possible, too.
The AUTHENTICATED state is exited with the HLTA command and upon reception, the
NTAG I2C plus transits to the HALT state.
Any other invalid command in AUTHENTICATED state is interpreted as an error.
Depending on its previous state, the NTAG I2C plus returns to either to the IDLE or HALT
state.
8.2.2.6 HALT state
HALT and IDLE states constitute the two waiting states implemented in the NTAG I2C
plus. An already processed NTAG I2C plus in ACTIVE or AUTHENTICATED state can be
set into the HALT state using the HLTA command. In the anticollision phase, this state
helps the NFC device distinguish between processed tags and tags yet to be selected.
The NTAG I2C plus can only exit HALT state upon execution of the WUPA command.
Any other data received when the device is in this state is interpreted as an error, and
NTAG I2C plus state remains unchanged.
NT3H2111_2211 map is detailed in Table 4 ry) and Table 5 ace and in Table 6 Table 7 SRAM mem Section 1 1
NXP Semiconductors NT3H2111_2211
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8.3 Memory organization
The memory map is detailed in Table 4 (1k memory) and Table 5 (2k memory) from
the NFC interface and in Table 6 (1k memory) and Table 7 (2k memory) from the I2C
interface. The SRAM memory is only available and accessible when powered via VCC.
Please refer to Section 11 for examples of memory map from the NFC interface with
SRAM mapping.
The structure of manufacturing data, static and dynamic lock bytes, capability container
and user memory pages are compatible with other NTAG products.
Any memory access which starts at a valid address and extends into an invalid access
region will return 00h value for the invalid region.
Bits and bytes mareked as reserved for future use (RFU) SHALL NOT be changed, as it
may lead to unintended tag behaviour.
8.3.1 Memory map from NFC perspective
Memory access from the NFC perspective is organized in pages of 4 bytes each. If
password protection is not used, complete user memory is unprotected.
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Table 4. NTAG I2C plus 1k memory organization from the NFC perspective
Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
0 00h Serial number (UID) READ
1 01h Serial number (UID) Internal READ
2 02h Internal Static lock bytes READ/R&W
3 03h Capability Container (CC) READ&WRITE
4 04h
... ...
Unprotected user memory READ&WRITE
AUTH0 AUTH0
... ...
225 E1h
Protected user memory READ1READ&WRITE
226 E2h Dynamic lock bytes 00h R&W/READ
227 E3h RFU RFU RFU AUTH0 READ1READ&WRITE
228 E4h ACCESS RFU RFU RFU READ1READ&WRITE
229 E5h PWD2READ1READ&WRITE
230 E6h PACK2RFU RFU READ1READ&WRITE
231 E7h PT_I2C RFU RFU RFU READ1READ&WRITE
232 E8h
233 E9h
Configuration registers see 8.3.12
234 EAh
235 EBh
Invalid access - returns NAK n.a.
236 ECh
237 EDh
Session registers see 8.3.12
238 EEh
239 EFh
Invalid access - returns NAK n.a.
240 F0h
... ...
0
255 FFh
Invalid access - returns NAK n.a.
1 ... ... Invalid access - returns NAK n.a.
2 ... ... Invalid access - returns NAK n.a.
0 00h
... ...
Invalid access - returns NAK n.a.
248 F8h
3
249 F9h
Mirrored session registers see 8.3.12
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Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
... ...
255 FFh
Invalid access - returns NAK n.a.
1 If NFC_PROT bit is set to 1b, NTAG I2C plus returns NAK
2 On reading PWD or PACK, NTAG I2C plus always returns 00h for all bytes
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Table 5. NTAG I2C plus 2k memory organization from the NFC perspective
Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
0 00h Serial number (UID) READ
1 01h Serial number (UID) Internal READ
2 02h Internal Static lock bytes READ/R&W
3 03h Capability Container (CC) READ&WRITE
4 04h
... ...
Unprotected user memory READ&WRITE
AUTH0 AUTH0
... ...
225 E1h
Protected user memory READ1READ&WRITE
226 E2h Dynamic lock bytes 00h R&W/READ
227 E3h RFU RFU RFU AUTH0 READ1READ&WRITE
228 E4h ACCESS RFU RFU RFU READ1READ&WRITE
229 E5h PWD2READ1READ&WRITE
230 E6h PACK2RFU RFU READ1READ&WRITE
231 E7h PT_I2C RFU RFU RFU READ1READ&WRITE
232 E8h
233 E9h
Configuration registers see 8.3.12
234 EAh
235 EBh
Invalid access - returns NAK n.a.
236 ECh
237 EDh
Session registers see 8.3.12
238 EEh
... ...
0
255 FFh
Invalid access - returns NAK n.a.
0 00h
... ...1
255 FFh
(Un-)protected user memory3,4 see protected user
memory in Sector 0
2 ... ... Invalid access - returns NAK n.a.
0 00h
... ...
Invalid access - returns NAK n.a.
248 F8h
3
249 F9h
Mirrored session registers see 8.3.12
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Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
... ...
255 FFh
Invalid access - returns NAK n.a.
1 If NFC_PROT bit is set to 1b, NTAG I2C plus returns NAK
2 On reading PWD or PACK, NTAG I2C plus always returns 00h for all bytes
3 If 2K_PROT bit is set to 1b, complete Sector 1 of NTAG I2C plus is password protected
4 If NFC_DIS_SEC1 bit is set to 1b, complete Sector 1 of NTAG I2C plus is not accessible from NFC perspective
NT3H2111_2211
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NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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8.3.2 Memory map from I2C interface
The memory access of NTAG I2C plus from the I2C interface is organized in blocks of 16
bytes each.
I²C slave address is stored in most significant 7 bits of byte 0 in block 0. However, when
reading block 0, NTAG I2C plus always returns 04h for byte 0.
WARNING: When configuring Static lock bytes and Capability container, Address byte
gets updated, too. Address byte consists of slave address (coded in most significant 7
bits) and least significant bit set to 0b.
REMARK: For convenience reasons it is recommended to configure Address byte (block
0, byte 0) to 04h.
NT3H2111_2211
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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Table 6. NTAG I2C plus 1k memory organization from the I2C perspective
Byte number within a block Access conditions
0123
4567
I2C_PROT
I2C block
address
8 9 10 11
Dec. Hex. 12 13 14 15
00b 01b 1xb
Addr.1Serial number (UID)
Serial number (UID) Internal
Internal Static lock bytes
0 00h
Capability Container (CC)
READ&WRITE
1 01h
... ...
Unprotected user memory READ&WRITE
AUTH0 AUTH0
... ...
55 37h
Protected user memory READ&WRITE READ NAK
Protected user memory READ&WRITE READ NAK
Dynamic lock bytes 00h
56 38h
RFU RFU RFU AUTH0
ACCESS RFU RFU RFU
PWD2
PACK2RFU RFU
57 39h
PT_I2C RFU RFU RFU
READ&WRITE
Configuration
registers see 8.3.12
00h 00h 00h 00h
58 3Ah
00h 00h 00h 00h
READ
59 3Bh
... ...
247 F7h
Invalid access - returns NAK n.a.
248 F8h
... ...
251 FBh
SRAM memory (64 bytes) READ&WRITE
... ... Invalid access - returns NAK n.a.
Session
registers see 8.3.12
254 FEh
00h 00h 00h 00h READ
NT3H2111_2211 flu
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NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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Byte number within a block Access conditions
0123
4567
I2C_PROT
I2C block
address
8 9 10 11
Dec. Hex. 12 13 14 15
00b 01b 1xb
00h 00h 00h 00h
255 FFh Invalid access - returns NAK n.a.
1 The byte 0 of block 0 is always read as 04h (UID0). Writing to block 0 updates the I2C address.
2 On reading PWD and PACK, NTAG I2C plus always returns 00h for all bytes
NT3H2111_2211
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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Table 7. NTAG I2C plus 2k memory organization from the I2C perspective
Byte number within a block Access conditions
0123
4567
I2C_PROT
I2C block
address
8 9 10 11
Dec. Hex. 12 13 14 15
00b 01b 1xb
Addr.1Serial number (UID)
Serial number (UID) Internal
Internal Static lock bytes
0 00h
Capability Container (CC)
READ&WRITE
1 01h
... ...
Unprotected user memory READ&WRITE
AUTH0 AUTH0
... ...
Protected user memory READ&WRITE READ NAK
Protected user memory READ&WRITE READ NAK
Protected user memory
Dynamic lock bytes 00h
56 38h
RFU RFU RFU AUTH0
ACCESS RFU RFU RFU
PWD2
PACK2RFU RFU
57 39h
PT_I2C RFU RFU RFU
READ&WRITE
Configuration
registers see 8.3.12
00h 00h 00h 00h
58 3Ah
00h 00h 00h 00h
READ
... ... Invalid access - returns NAK n.a.
64 40h
... ...
127 7Fh
(Un-)protected user memory READ&WRITE READ NAK
... ... Invalid access - returns NAK n.a.
248 F8h
... ...
251 FBh
SRAM memory (64 bytes) READ&WRITE
... ... Invalid access - returns NAK n.a.
NT3H2111_2211 IZC plus the pass Section 8.3.11 Section 11.2 Table 14
NXP Semiconductors NT3H2111_2211
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Byte number within a block Access conditions
0123
4567
I2C_PROT
I2C block
address
8 9 10 11
Dec. Hex. 12 13 14 15
00b 01b 1xb
Session
registers see 8.3.12
00h 00h 00h 00h
254 FEh
00h 00h 00h 00h
READ
255 FFh Invalid access - returns NAK n.a.
1 The byte 0 of block 0 is always read as 04h (UID0). Writing to block 0 updates the I2C address.
2 On reading PWD and PACK, NTAG I2C plus always returns 00h for all bytes
8.3.3 EEPROM
The EEPROM is a non-volatile memory that stores the 7 byte UID, the memory lock
conditions, IC configuration information and the user memory.
Sector 0 memory map looks totally the same for NTAG I2C plus 1k and 2k version, the
only difference is the dynamic lock bit granularity.
NXP introduced with NTAG I2C plus the possibility to split the memory in an open and a
password protected area see Section 8.3.11.
8.3.4 SRAM
For frequently changing data, a volatile memory of 64 bytes with unlimited endurance is
built in. The 64 bytes are mapped in a similar way as done in the EEPROM, i.e., 64 bytes
are seen as 16 pages of 4 bytes from NFC perspective.
The SRAM is only available when the tag is powered via the VCC pin.
The SRAM is located at the end of the memory space and it is always directly accessible
by the I2C host (addresses F8h to FBh). An NFC device cannot access the SRAM
memory in normal mode (i.e., outside the pass-through mode). The SRAM is only
accessible by the NFC device if the SRAM is mirrored onto the EEPROM memory space.
With SRAM mirror enabled (SRAM_MIRROR_ON_OFF = 1b - see Section 11.2), the
SRAM can be mirrored in the User Memory from start page 01h to 74h for access from
the NFC side.
The Memory mirror must be enabled once both interfaces are ON as this feature is
disabled after each POR.
The register SRAM_MIRROR_BLOCK (see Table 14) indicates the address of the first
page of the SRAM buffer. In the case where the SRAM mirror is enabled and the READ
command is addressing blocks where the SRAM mirror is located, the SRAM byte values
will be returned instead of the EEPROM byte values. Similarly, if the tag is not VCC
powered, the SRAM mirror is disabled and reading out the bytes related to the SRAM
mirror position would return the values from the EEPROM.
NT3H2111_2211 Sectxon 8.3.12), th Section 11 ogrammed Figure 7 | | | “5.012302 Tag specific ddress 00 Figure 8 MSE LSB MSB LSB luck byxe 0 hack byte 1 “5.006993
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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In the pass-through mode (PTHRU_ON_OFF = 1b - see Section 8.3.12), the SRAM
is mirrored to the fixed address F0h - FFh for NFC access (see Section 11) in the first
memory sector (Sector 0) of NTAG I2C plus.
8.3.5 Serial number (UID)
The unique 7-byte serial number (UID) is programmed into the first 7 bytes of memory
covering page addresses 00h and 01h - see Figure 7. These bytes are programmed and
write protected during production.
UID0 is fixed to the value 04h - the manufacturer ID for NXP Semiconductors in
accordance with ISO/IEC 14443-3.
aaa-012802
MSB LSB
page 0
byte
manufacturer ID for NXP Semiconductors (04h)0 0 0 0 0 1 0 0
UID0 UID1 UID2 UID3 UID4 UID5 UID6 SAK
page 1 page 2
0 1 2 3
ATQA1
ATQA07 bytes UID
lock bytes
Figure 7. Serial number (UID)
8.3.6 Static Lock Bytes
According to NFC Forum Type 2 Tag specification, the bits of byte 2 and byte 3 of page
02h (via NFC) or byte 10 and 11 address 00h (via I2C) represent the field programmable,
read-only locking mechanism (see Figure 8). Each page from 03h (CC) to 0Fh can be
individually locked by setting the corresponding locking bit to logic 1b to prevent further
write access. After locking, the corresponding page becomes read-only memory.
This read only locking is address-based. This means, when SRAM is mirrored to these
blocks, also SRAM blocks are read only from NFC prespective.
In addition, NTAG I2C plus uses the three least significant bits of lock byte 0 as the
block-locking bits. Bit 2 controls pages 0Ah to 0Fh (via NFC), bit 1 controls pages 04h
to 09h (via NFC) and bit 0 controls page 03h (CC). Once the block-locking bits are set,
the locking configuration for the corresponding memory area is frozen, e.g. cannot be
changed to read-only anymore.
L
7
L
6
L
5
L
4
L
CC
BL
15-10
BL
9-4
BL
CC
MSB
0
page 2
Lx locks page x to read-only
BLx blocks further locking for the memory area x
lock byte 0
lock byte 1
1 2 3
LSB
L
15
L
14
L
13
L
12
L
11
L
10
L
9
L
8
MSB LSB
aaa-006983
Figure 8. Static lock bytes 0 and 1
NT3H2111_2211 o lock the pa namic lock h. The thre 864 data Figure 9 G | C plus startin ed. The dynami cover the mem IZC plus 2k). for NTAG | Figure 8 address 16 an are located i 40 data byte is 16 page Figure 10
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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For example, if BL15-10 is set to logic 1b, then bits L15 to L10 (lock byte 1, bit[7:2]) can
no longer be changed. The static locking and block-locking bits are set by the bytes 2
and 3 of the WRITE command to page 02h. The contents of the lock bytes are bit-wise
OR’ed and the result then becomes the new content of the lock bytes. This process
is irreversible from NFC perspective. If a bit is set to logic 1b, it cannot be changed
back to logic 0b. From I2C perspective, the bits can be reset to 0b by writing bytes 10
and 11 of block 00h. As I2C address is coded in byte 0 of block 0, it may be changed
unintentionally.
The contents of bytes 0 and 1 of page 02h (via NFC) are unaffected by the
corresponding data bytes of the WRITE command.
The default value of the static lock bytes is 0000h.
8.3.7 Dynamic Lock Bytes
To lock the pages of NTAG I2C plus starting at page address 16 and onwards, the
dynamic lock bytes are used. The dynamic lock bytes are located in Sector 0 at page
E2h. The three lock bytes cover the memory area of 840 data bytes (NTAG I2C plus 1k)
or 1864 data bytes (NTAG I2C plus 2k). The granularity is 16 pages for NTAG I2C plus 1k
(see Figure 9) and 32 pages for NTAG I2C plus 2k (see Figure 10) compared to a single
page for the first 48 bytes (see Figure 8).
NTAG I2C plus needs a Lock Control TLV as specified in NFC Forum Type 2 Tag
specification to ensure NFC Forum Type 2 Tag compliancy.
When NFC Forum Type 2 Tag transition to READ ONLY state is intended, all bits marked
as RFUI and dynamic lock bits related to the protected area shall be set to 0b when
writing to the dynamic lock bytes.
The default value of the dynamic lock bytes is 000000h. The value of Byte 3 is always
00h when read.
Like for the static lock bytes, this process of modifying the dynamic lock bits is
irreversible from NFC perspective and applies also for potentially mirrored SRAM. If a bit
is set to logic 1b, it cannot be changed back to logic 0b. From I2C interface, these bits
can be set to 0b again.
NT3H2111_2211 MSB LSB MSE LSB m 7 6 m7 6 7/ m 7 6 5357005092 MSB LSB MSB LSB page 2251mm I I 3.3542155:
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
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Product data sheet Rev. 3.5 — 7 May 2019
COMPANY PUBLIC 359935 25 / 82
aaa-008092
0 1 2 3
page 226 (E2h)
L
O
C
K
P
AG
E
1
2
8
-
14
3
MSB LSB
bit 7 6
L
O
C
K
P
AG
E
1
1
2-
1
2
7
L
O
C
K
P
AG
E
9
6
-
1
1
1
L
O
C
K
P
AG
E
8
0
-
95
L
O
C
K
P
AG
E
6
4
-
79
L
O
C
K
P
AG
E
4
8
-
63
L
O
C
K
P
AG
E
3
2
-
47
L
O
C
K
P
AG
E
1
6
-
31
L
O
C
K
P
AG
E
2
2
4
-
22
5
5 4 3 2 1 0
R
F
U
I
MSB LSB
bit 7 6
R
F
U
I
L
O
C
K
P
AG
E
2
0
8
-
22
3
L
O
C
K
P
AG
E
1
9
2
-
20
7
L
O
C
K
P
AG
E
1
7
6
-
19
1
L
O
C
K
P
AG
E
1
6
0
-
17
5
L
O
C
K
P
AG
E
1
4
4
-
15
9
5 4 3 2 1 0
R
F
U
I
MSB LSB
bit 7 6
B
L
2
0
8
-
2
2
5
B
L
1
7
6
-
2
0
7
B
L
1
4
4
-
1
7
5
B
L
1
1
2
-
1
4
3
B
L
8
0
-
1
1
1
B
L
4
8
-
7
9
B
L
1
6
-
4
7
5 4 3 2 1 0
Figure 9. NTAG I2C plus 1k Dynamic lock bytes 0, 1 and 2
0 1 2 3
page 226 (E2h)
Sector 0
Block Locking (BL) bits
L
O
C
K
P
A
G
E
2
5
6
-
2
7
1
MSB LSB
bit 7 6 5 4 3 2 1 0
MSB LSB
bit 7 6 5 4 3 2 1 0
MSB LSB
bit 7 6 5 4 3 2 1 0
aaa-021651
L
O
C
K
P
A
G
E
2
0
8
-
2
2
5
L
O
C
K
P
A
G
E
1
7
6
-
2
0
7
L
O
C
K
P
A
G
E
1
4
4
-
1
7
5
L
O
C
K
P
A
G
E
1
1
2
-
14
3
L
O
C
K
P
A
G
E
8
0
-
1
1
1
L
O
C
K
P
A
G
E
4
8
-
7
9
L
O
C
K
P
A
G
E
1
6
-
4
7
B
L
4
6
4
-
5
1
1
L
O
C
K
P
A
G
E
4
6
4
-
4
9
5
L
O
C
K
P
A
G
E
4
9
6
-
51
1
L
O
C
K
P
A
G
E
4
3
2
-
4
6
3
L
O
C
K
P
A
G
E
4
0
0
-
4
3
1
L
O
C
K
P
A
G
E
3
6
8
-
3
9
9
L
O
C
K
P
A
G
E
3
3
6
-
3
6
7
L
O
C
K
P
A
G
E
3
0
4
-
3
3
5
L
O
C
K
P
A
G
E
2
7
2
-
3
0
3
B
L
4
0
0
-
4
6
3
B
L
3
3
6
-
3
9
9
B
L
2
7
2
-
3
3
5
B
L
2
0
8
-
2
7
1
B
L
1
4
4
-
2
0
7
B
L
8
0
-
1
4
3
B
L
1
6
-
7
9
Figure 10. NTAG I2C plus 2k Dynamic lock bytes 0, 1 and 2
NT3H2111_2211 Accord Ref. 1 Figure 11 page 3 Examp‘e
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8.3.8 Capability Container (CC)
According to NFC Forum Type 2 Tag specification the CC is located on page 03h (see
Ref. 1). To keep full flexibility to split the memory into an open and protected area, the
default value of the CC is initialized with 00000000h during the IC production.
NDEF messages can only be written with NFC Forum devices, after setting these
CC bytes according to application-specific needs and NFC Forum specification by a
WRITE command from the I2C or NFC interface. According to NFC Forum specification,
a bit once set to 1b, an NFC Forum Device cannot set bits of the CC back to 0b.
However, similar to the lock bits, setting these bits back to 0b is again possible from I2C
perspective.
WARNING: As I2C address (byte 0) and static lock bytes (byte 10 and byte 11) are
coded in block 00h from I2C side, the I2C address may be changed or the tag may be
locked unintentionally, when changing CC.
REMARK: When reading out byte 0, NTAG I²C plus always returns 04h (UID0).
Therefore, for convenience reasons it is recommended to configure I²C address byte to
04h.
NXP recommends setting the size parameter of the CC only to values that the T2T_Area
ends at lock bit granularity boundaries when using only part of the memory for storing
NDEF messages. Consequently T2T_Area size should be 112 + 64*N or 888 bytes with
N less or equal to 13 for the 1k version, or 176 + 128*N or 2032 bytes with N less or
equal to 14 for the 2k version.
In Figure 11 it is shown how the CC is changed when going from READ/WRITE to READ
ONLY state according to NFC Forum.
aaa-021725
byte E1h 10h 6Dh 00h
Example
CC bytes
CC bytes
byte 0 1 2 3
page 3
possibel content after initialization
11100001 00010000 01101101 00000000
write command to page 3 over RF
00000000 00000000 00000000 00001111
result in page 3 (read-only state over RF)
11100001 00010000 01101101 00001111
Figure 11. Possible configuration of CC bytes of NTAG I2C 1k version
8.3.9 User Memory pages
Pages 04h to E1h of Sector 0 via the NFC interface - Block 01h to 37h, plus the first 8
bytes of block 38h via the I2C interface is the user memory area for NTAG I2C plus 1k
and 2k version.
In addition, complete Sector 1 (page 00h to FFh) via the NFC interface - block 40h to 7Fh
via the I2C interface is used as user memory area for NTAG I2C plus 2k version.
8.3.10 Memory content at delivery
As described above the CC in page 03h is set to all 00h to keep the full flexibility. To
allow NFC Forum NDEF message reading and writing page 03h (CC) and the following
data page (NDEF TLV) of NTAG I2C plus need to be initialized by the user according to
NT3H2111_2211 Ref. 1 .Table 8 Table 8‘ Minimum memory content to be in initialized state lor NTAG I C plus E7h (Sector 0 Table ace are use e bit value faces whe Table 13 \m—l detailed des Section 8.7
NXP Semiconductors NT3H2111_2211
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the NFC Forum Type 2 Tag specification (see Ref. 1). Table 8 shows an example of NFC
Forum-compliant content using the whole memory of sector 0 for NDEF messages.
Remark: The default content of the data pages from page 04h onwards is not defined at
delivery.
Table 8. Minimum memory content to be in initialized state for NTAG I2C plus
Page Address Byte number within page
0123
03h E1h 10h 6Dh 00h
04h 03h 00h FEh 00h
8.3.11 Password and Access Configuration
NTAG I2C plus can be configured to have password protected memory areas.
If this feature is used, NXP recommends changing and diversify the PWD and PACK for
every single chip.
The password and access configuration area of pages E3h to E7h (Sector 0 - see Table
9) via the NFC interface or blocks 38h and 39h via the I2C interface are used to configure
the password and access conditions of the NTAG I2C plus. Those bit values are stored in
the EEPROM. Their values can be read and written by both interfaces when applicable
and when not locked by the register lock bits (see REG_LOCK in Table 13).
AUTH0 defines the starting page address of the protected area in Sector 0. NXP
recommends setting AUTH0 in a way always respecting the lock bit granularity. Setting
AUTH0 greater EBh, disables password protection.
The NFC_PROT bit is used to either only require a PWD_AUTH for writing data to the
protected area or even protect reading data from the protected area.
If password authentication is used, even the SRAM access can be protected by setting
SRAM_PROT bit to 1b.
I2C_PROT enables the possibility to limit access to the protected area from I2C
perspective to read only or no access at all.
AUTLIM value can be used to limit negative PWD_AUTH attempts.
For the 2k version of NTAG I2C plus NFC_DIS_SEC1 bit can be used to disable the
access to Sector 1 from NFC perspective with the 2K_PROT bit password protection for
Sector 1 can be enabled.
Once password protection is enabled, writing to Password and Access Configuration
bytes is only possible after a successful password authentication. On reading the PWD or
PACK, from NFC or I2C perspective, NTAG I2C plus always returns all 00h bytes.
A detailed description of the mechanism and how to program all the parameters is given
in Section 8.7.
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Table 9. Password and Access Configuration Register
NFC page address
(Sector 0)
I2C block address Byte number from NFC perspective
Dec Hex Dec Hex 0 1 2 3
224 E0h
225 E1h
User Memory
226 E2h Dynamic lock bytes 00h
227 E3h
56 38h
RFU RFU RFU AUTH0
228 E4h ACCESS RFU RFU RFU
229 E5h PWD
230 E6h PACK RFU RFU
231 E7h
57 39h
PT_I2C RFU RFU RFU
Table 10.  Password and Access Configuration bytes
Bit Field Access
via NFC
Access
via I2C
Default
values
Description
Authentication Pointer (AUTH0)
7-0 AUTH0 R&W R&W FFh Page address of Sector 0 from which onwards the password
authentication is required to access the user memory from NFC
perspective, dependent on NFC_PROT bit.
If AUTH0 is set to a page address greater than EBh, the
password protection is effectively disabled. Password protected
area starts from page AUTH0 and ends at page EBh.
Password protection is excluded for Dynamic Lock Bits, session
registers and mirrored SRAM pages.
REMARK: From I2C interface, you have access to all
configuration pages until REG_LOCK_I2C bit is set to 1b.
Access Conditions (ACCESS)
7 NFC_PROT R&W R&W 0b Memory protection bit:
0b: write access to protected area is protected by the password
1b: read and write access to protected area is protected by the
password
6 RFU R&W R&W 0b RFU - SHALL be 0b
5 NFC_DIS_SEC1 R&W R&W 0b NFC access protection to Sector 1
0b: Sector 1 is accessible in 2k version
1b: Sector 1 in inaccessible and returns NAK0
4-3 RFU R&W R&W 00b RFU - SHALL be 00b
NT3H2111_2211 Table 11
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Bit Field Access
via NFC
Access
via I2C
Default
values
Description
2-0 AUTHLIM R&W R&W 000b Limitation of negative password authentication attempts. After
reaching the limit, protected area is not accessible any longer.
000b: limiting of negative password authentication attempts
disabled.
001b-111b: maximum number of negative password
authentication attempts is 2AUTHLIM
Password (PWD)
31-0 PWD R&W R&W FFFFFFFFh 32-bit password used for memory access protection.
Reading PWD always returns 00000000h
Password Acknowledge (PACK)
15-0 PACK R&W R&W 0000h 16-bit password acknowledge used during the password
authentication process.
Reading PACK always returns 0000h
Protection bits (PT_I2C)
7-4 RFU R&W R&W 0000b RFU - SHALL be 0000b
3 2K_PROT R&W R&W 0b Password protection for Sector 1 for 2k version
0b: password authentication for Sector 1 disabled
1b: password authentication needed to access Sector 1
2 SRAM_PROT R&W R&W 0b Password protection for pass-through and mirror mode
0b: password authentication for pass-through mode disabled
1b: password authentication needed to access SRAM in pass-
through mode
1-0 I2C_PROT R&W R&W 00b Access to protected area from I2C perspective
00b: Entire user memory accessible from I2C
01b: read and write access to unprotected user area, read only
access to protected area
1Xb: read and write access to unprotected area, no access to
protected area.
REMARK: Independent from these bits I2C always has R&W
access to:
Session registers
SRAM
Configuration pages including PWD Configuration area, but
dependent on REG_LOCK_I2C bit
8.3.12 NTAG I2C configuration and session registers
NTAG I2C plus behavior can be configured and read in two separate locations depending
if the configurations shall be effective within the communication session (use session
registers) or by default after Power-On Reset (POR) (use configuration registers).
The configuration registers of pages E8h to E9h (Sector 0 - see Table 11) via the NFC
interface or block 3Ah via the I2C interface are used to configure the default behavior
of the NTAG I2C plus. Those bit values are stored in the EEPROM and represent the
NT3H2111_2211 gs to be effec s when app Table 13 Table 11. Configuration register NTAG IZC plus ster on pa Table 12 Table 12. Session registers NTAG I’c plus ers and con uration def Table 13 Table 14 registers via Semion 9.8
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default settings to be effective after POR. Their values can be read and written by
both interfaces when applicable and when not locked by the register lock bits (see
REG_LOCK in Table 13).
Table 11. Configuration register NTAG I2C plus
NFC address
(Sector 0)
I2C Address Byte number from NFC perspective
Dec Hex Dec Hex 0 1 2 3
232 E8h NC_REG LAST_NDEF_BLOCK SRAM_MIRROR_BLOCK WDT_LS
233 E9h
58 3Ah
WDT_MS I2C_CLOCK_STR REG_LOCK RFU
The session register on pages ECh to EDh (Sector 0) via the NFC interface or block
FEh via I2C, see Table 12, are used to configure or monitor the values of the current
communication session. Those bits are read only via the NFC interface but may be read
and written via the I2C interface.
For backward compatibility reasons the session registers are mirrored to Sector 3 (page
F8h and F9h via the NFC interface).
Table 12. Session registers NTAG I2C plus
NFC
address
(Sector 0)
I2C Address Byte number
Dec Hex Dec Hex 0 1 2 3
236 ECh NC_REG LAST_NDEF_BLOCK SRAM_MIRROR _BLOCK WDT_LS
237 EDh
254 FEh
WDT_MS I2C_CLOCK_STR NS_REG RFU
Both, the session and the configuration registers have the same configuration options
and parameters except the REG_LOCK bits, which are only available in the configuration
register and the NS_REG bits which are only available in the session register. After POR,
the content of the configuration register is loaded into the session register.
The values of both registers can be changed during a communication session. If the
desired effect should be visible immediately, but only for the current communication
session, the session registers must be used. After POR, the session registers values will
again contain the configuration register values as before.
To change the default behavior, changes to the configuration register are needed, but the
related effect will only be visible after the next POR.
To make the effect immediately and after next POR visible, changes to configuration and
session registers are needed.
All registers and configuration default values, access conditions and descriptions are
defined in Table 13 and Table 14.
Reading and writing the session registers via I2C can only be done via the READ and
WRITE registers operation - see Section 9.8.
NT3H2111_2211 Secfiun 9.3 Semion 8.4 Semion 8.4
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Table 13.  Configuration bytes
Bit Field Access
via NFC
Access
via I2C
Default
values
Description
Configuration register: NC_REG
7 NFCS_I2C_RST_ON_OFF R&W R&W 0b Enables the NFC silence feature and enables soft
reset through I2C repeated start - see Section 9.3
6 PTHRU_ON_OFF R&W R&W 0b 1b: pass-through mode using SRAM enabled and
SRAM mapped to end of Sector 0.
0b: pass-through mode disabled
5-4 FD_OFF R&W R&W 00b defines the event upon which the signal output on the
FD pin is released
00b: if the field is switched off
01b: if the field is switched off or the tag is set to the
HALT state
10b: if the field is switched off or the last page of the
NDEF message has been read (defined in LAST_
NDEF_BLOCK)
11b: (if FD_ON = 11b) if the field is switched off or if
last data is read by I2C (in pass-through mode NFC
---> I2C) or last data is written by I2C (in pass-through
mode I2C---> NFC)
11b: (if FD_ON = 00b or 01b or 10b) if the field is
switched off
See Section 8.4 for more details
3-2 FD_ON R&W R&W 00b defines the event upon which the signal output on the
FD pin is pulled low
00b: if the field is switched on
01b: by first valid start of communication (SoC)
10b: by selection of the tag
11b: (in pass-through mode NFC-->I2C) if the data is
ready to be read from the I2C interface
11b: (in pass-through mode I2C--> NFC) if the data is
read by the NFC interface
See Section 8.4 for more details
1 SRAM_MIRROR_ON_OFF R&W R&W 0b 1b: SRAM mirror enabled and mirrored SRAM starts at
page SRAM_MIRROR_BLOCK
0b: SRAM mirror disabled
0 TRANSFER_DIR R&W R&W 1b defines the data flow direction when pass-through
mode is enabled
0b: from I2C to NFC interface
1b: from NFC to I2C interface
In case the pass-through mode is NOT enabled, this
bit should be set to 1b, otherwise there is no WRITE
access from the NFC perspective
Configuration register: LAST_NDEF_BLOCK
NT3H2111_2211
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Bit Field Access
via NFC
Access
via I2C
Default
values
Description
7-0 LAST_NDEF_BLOCK R&W R&W 00h I2C block address of I2C block, which contains last
byte(s) of stored NDEF message. An NFC read
of the last page of this I2C block sets the register
NDEF_DATA_READ to 1b and triggers field detection
pin if FD_OFF is set to 10b.
Valid range starts
from 01h (NFC page 04h)
up to 37h (NFC page DCh) for NTAG I2C plus 1k
or up to 7Fh (NFC page FCh on Sector 1) for NTAG
I2C plus 2k.
Configuration register: SRAM_MIRROR_BLOCK
7-0 SRAM_MIRROR_BLOCK R&W R&W F8h I2C block address of SRAM when mirrored into the
User memory.
Valid range starts
from 01h (NFC page 04h)
up to 34h (NFC page D0h) for NTAG I2C plus 1k
or up to 7Ch (NFC page F0h on memory Sector 1) for
NTAG I2C plus 2k
Configuration register: WDT_LS
7-0 WDT_LS R&W R&W 48h Least Significant byte of watchdog time control register
Configuration register: WDT_MS
7-0 WDT_MS R&W R&W 08h Most Significant byte of watchdog time control register.
When writing WDT_MS byte, the content of WDT_MS
and WDT_LS gets active for the watchdog timer.
Configuration register: I2C_CLOCK_STR
7-1 RFU R&W R&W 0000000b RFU - all 7 bits SHALL be 0b
0 I2C_CLOCK_STR R&W R&W 1b Enables (1b) or disable (0b) the I2C clock stretching
Configuration register: REG_LOCK
7-2 RFU R&W R&W 000000b RFU - all 6 bits SHALL be 0b
1 REG_LOCK_I2C1R&W R&W 0b I2C Configuration Lock Bit
0b: Configuration bytes may be changed via I2C
1b: Configuration bytes cannot be changed via I2C
Once set to 1b, cannot be reset to 0b anymore.
0 REG_LOCK_NFC1R&W R&W 0b NFC Configuration Lock Bit
0b: Configuration bytes may be changed via NFC
1b… Configuration bytes cannot be changed via NFC
Once set to 1b, cannot be reset to 0b anymore.
1 Setting both bits REG_LOCK_I2C and REG_LOCK_NFC to 1b, permanently locks write access to register default values
(as no write is allowed anymore). As long as one bit is still 0b, the corresponding interface can still access and change the
register lock bytes.
NT3H2111_2211 Table 14. Session register bytes
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Table 14.  Session register bytes
Bit Field Access
via NFC
Access
via I2C
Default
values
Description
Session register: NC_REG
7 NFCS_I2C_RST_ON_OFF READ R&W - see configuration bytes description
6 PTHRU_ON_OFF READ R&W - see configuration bytes description, the bit is
cleared automatically, when one of the interfaces
is OFF
5-4 FD_OFF READ R&W - see configuration bytes description
3-2 FD_ON READ R&W
1 SRAM_MIRROR_ON_
OFF
READ R&W - see configuration bytes description, the bit is
cleared automatically, when there is no Vcc power.
0 TRANSFER_DIR READ R&W see configuration bytes description
Session register: LAST_NDEF_BLOCK
7-0 LAST_NDEF_BLOCK READ R&W - see configuration bytes description
Session register: SRAM_MIRROR_BLOCK
7-0 SRAM_MIRROR_BLOCK READ R&W - see configuration bytes description
Session register: WDT_LS
7-0 WDT_LS READ R&W - see configuration bytes description
Session register: WDT_MS
7-0 WDT_MS READ R&W - see configuration bytes description
Session register: I2C_CLOCK_STR
7-2 RFU READ READ - RFU, all 6 bits locked to 0b
1 NEG_AUTH_REACHED READ READ 0b Status bit to show the number of negative PWD_
AUTH attempts reached
0b: PWD_AUTH still possible
1b: PWD_AUTH locked
0 I2C_CLOCK_STR READ READ - See configuration bytes description
Session register: NS_REG
7 NDEF_DATA_READ READ READ 0b 1b: all data bytes read from the address specified
in LAST_NDEF_BLOCK. Bit is reset to 0b when
read
6 I2C_LOCKED READ R&W 0b 1b: Memory access is locked to the I2C interface
5 RF_LOCKED READ READ 0b 1b: Memory access is locked to the NFC interface
4 SRAM_I2C_READY READ READ 0b 1b: data is ready in SRAM buffer to be read by I2C
3 SRAM_RF_READY READ READ 0b 1b: data is ready in SRAM buffer to be read by
NFC
2 EEPROM_WR_ERR READ R&W 0b 1b: HV voltage error during EEPROM write or
erase cycle
Needs to be written back via I2C to 0b to be
cleared
NT3H2111_2211 | the various mmbina s of config Table 13 Figure 13 Figure 14 Figure 15 Section 11 Figure 12
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Bit Field Access
via NFC
Access
via I2C
Default
values
Description
1 EEPROM_WR_BUSY READ READ 0b 1b: EEPROM write cycle in progress - access to
EEPROM disabled
0b: EEPROM access possible
0 RF_FIELD_PRESENT READ READ 0b 1b: NFC field is detected
8.4 Configurable Field Detection Pin
The field detection pin based on open-drain implementation provides the capability to
trigger an external device (e.g. μController) or switch on the connected circuitry by an
external power management unit depending on activities on the NFC interface.
As the field detection pin functionality is operated via NFC field power, VCC supply for the
tag itself is not required.
NOTE: In some cases VOUT pin might be used as field detection trigger.
The conditions for pulling the field detection signal to low, FD_ON can be:
The presence of the NFC field
The detection of a valid command (Start of Communication)
The selection of the IC
REMARK: When FD_ON is configured to trigger on NFC field presence (00b), FD will be
pulled low again, when host is reading the NDEF_DATA_READ bit of NS_REG session
register from I2C perspective.
The conditions for releasing the field detection signal defined with FD_OFF can be:
The absence of the NFC field
The detection of the HALT state
The NFC interface has read the last part of the NDEF message defined with
LAST_NDEF_BLOCK
All the various combinations of configurations are described in Table 13 and illustrated
in Figure 13, Figure 14 and Figure 15 for all various combinations of the filed detection
signal configuration. The timing diagrams are not in scale and all given timing values are
typical values.
The field detection pin can be used also as a handshake mechanism in the pass-through
mode to signal to the external μController if
New data is written to SRAM on the NFC interface
Data written to SRAM from the μController is read via the NFC interface.
See Section 11 for more information on this handshake mechanism.
In Figure 12 an example how to connect the FD pin is given. All given values are typical
values and may vary from application to application.
NT3H2111 2211 mmsuusfi
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LA LB
VSS VOUT
SCL
GND
VCC
FD
event detect signal
APPLICATION
SDA
aaa-021652
1
2
3
4
6
5
8
7
Rpu
>2 kΩ
supply
(1.2 V ~ 3.6 V)
Figure 12. FD pin example circuit
aaa-021653
RF field
switches ON
First valid start of
communication
Tag selected
Tag set to HALT
RF field
switches OFF
ON
OFF
HIGH
LOW
RF field
FD pin
Event
0
01h
t
0
FD_ON = 00b
FD_OFF = 00b
NC_REG
RF_FIELD_PRESENT
NS_REG
1
Figure 13. Illustration of the field detection feature when configured for simple field
detection
NT3H2111 2211 m : 355 vs m:5us
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aaa-021654
RF field
switches ON
First valid start of
communication
Tag selected
RF field
switches OFF
ON
OFF
HIGH
LOW
RF field
FD pin
Event
0
15h
t
0
FD_ON = 01b
FD_OFF = 01b
NC_REG
RF_FIELD_PRESENT
NS_REG
Start of HALT
command
1
Figure 14. Illustration of the field detection feature when configured for first valid start of
communication detection
NT3H2111 2211 150 us Al: 1.1 ms Al: 3557021555 rform all nece ocked to 1h Table 14 cked' lo the Fe nlock the I20 oflime ofin EG registe Table 14
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aaa-021655
RF field
switches ON
First valid start of
communication
RF field
switches OFF
ON
OFF
HIGH
LOW
RF field
FD pin
Event
0
29h
t
0
FD_ON = 10b
FD_OFF = 10b
NC_REG
RF_FIELD_PRESENT
NS_REG
Start of SEL CL2
command
Start of READ of last
page of NDEF msg.
1
Figure 15. Illustration of the field detection feature when configured for selection of the tag
detection
8.5 Watchdog timer
In order to allow the I2C interface to perform all necessary commands (READ,
WRITE, ..), the memory access remains locked to the I2C interface until the register
I2C_LOCKED is cleared by the host - see Table 14.
However, to avoid that the memory stays 'locked' to the I2C for a long period of time, it
is possible to program a watchdog timer to unlock the I2C host from the tag, so that the
NFC device can access the tag after a period of time of inactivity. The host itself will not
be notified of this event directly, but the NS_REG register is updated accordingly (the
register bit I2C_LOCKED will be cleared - see Table 14).
The default value is set to 20 ms (848h), but the watch dog timer can be freely set
from 0001h (9.43 μs) up to FFFFh (617.995 ms). The timer starts ticking when the
communication between the NTAG I2C and the I2C interface starts. In case the
communication with the I2C is still going on after the watchdog timer expires, the
communication will continue until the communication has completed. Then the status
register I2C_LOCKED will be immediately cleared.
In the case where the communication with the I2C interface has completed before the
end of the timer and the status register I2C_LOCKED was not cleared by the host, it will
be cleared at the end of the watchdog timer.
NT3H2111_2211 ernal low er devices 5 illus‘r Figure 16 Ref. 7 commun ff cond Ref. 4 FD SCL vss LA GND I “3.021555
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The watchdog timer is only effective if the VCC pin is powered and will be reset and
stopped if the NTAG I2C is not VCC powered or if the register status I2C_LOCKED is set
to 0 and RF_LOCKED is set to 1b.
8.6 Energy harvesting
The NTAG I2C plus provides the capability to supply external low-power devices with
energy harvested from the NFC field of an NFC device as illustrated in Figure 16. All
given values are typical values. For more details, refer to Ref. 7.
The voltage and current from the energy harvesting depend on various parameters,
such as the strength of the NFC field, the tag antenna size, or the distance from the NFC
device. NTAG I2C plus provides typically 5 mA at 2 V on the VOUT pin with an NFC
Phone.
Operating NTAG I2C in energy harvesting mode requires a number of precautions:
A complete total connected capacitor in the range of typically 150 nF up to 220 nF
maximum shall be connected between VOUT and GND close to the terminals to
ensure that the voltage does not drop below VCC min during modulation or during any
application operation.
Start up load current on VOUT should be limited until sufficient voltage is built on
VOUT.
If NTAG I2C also powers the I2C bus, then VCC must be connected to VOUT, and pull-
up resistors on the SCL and SDA pins must be sized to control SCL and SDA sink
current when those lines are pulled low by NTAG I2C or the I2C host
If NTAG I2C also powers the Field Detect bus, then the pull-up resistor on the Field
Detect line must be sized to control the sink current into the Field Detect pin when
NTAG I2C pulls it low
The NFC reader device communicating with NTAG I2C shall apply polling cycles
including an NFC Field Off condition of at least 5.1 ms as defined in NFC Forum
Activity specification (see Ref. 4, chapter 6).
REMARK: increasing the output current on Vout decreases the NFC communication
range.
LA
LB
VSS
VOUT
SCL
VCC
FD
event detect signal
SDA
SCL
GND
SDA
aaa-021656
14 3 2
85 6 7
Rpu
>5 kΩ
Rpu
>5 kΩ
Rpu
>5 kΩ
supply
(2.2 V ~ 3 V)
Cload
150 nF ~ 220 nF
APPLICATION
Figure 16. Energy harvesting example circuit
NT3H2111_2211 Section 8.3.11 Ref. 9 PWD and the 16 Section 8.3.11
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8.7 Password authentication
The memory write or read/write access to a configurable part of the memory can be
constrained to a positive password authentication. The 32-bit secret password (PWD)
and the 16-bit password acknowledge (PACK) response shall be typically programmed
into the configuration pages at the tag personalization stage.
The AUTHLIM parameter specified in Section 8.3.11 can be used to limit the negative
authentication attempts.
In the initial state of NTAG I2C plus, password protection is disabled by an AUTH0 value
of FFh. PWD and PACK are freely writable in this state. Access to the configuration
pages and any part of the user memory can be restricted by setting AUTH0 to a page
address within the available memory space. This page address is the first one protected.
For a comprehensive description of all protection mechanism refer to Ref. 9.
Remark: The password protection method provided in NTAG I2C plus has to be intended
as an easy and convenient way to prevent unauthorized memory accesses. If a higher
level of protection is required, cryptographic methods can be implemented at application
layer to increase overall system security.
8.7.1 Programming of PWD and PACK
The 32-bit PWD and the 16-bit PACK need to be programmed into the configuration
pages, see Section 8.3.11. The password as well as the password acknowledge are
written LSByte first. This byte order is the same as the byte order used during the
PWD_AUTH command and its response.
The PWD and PACK bytes can never be read out of the memory. Instead of transmitting
the real value on any valid read command from both - NFC and I2C - interface, only 00h
bytes are replied.
If the password authentication is disabled, PWD and PACK can be written at any time.
If the password authentication is enabled, PWD and PACK can be written after a
successful PWD_AUTH command only.
Remark: To improve the overall system security, it is advisable to diversify the password
and the password acknowledge using a die individual parameter of the IC, which can be
the 7-byte UID available on NTAG I2C plus.
8.7.2 Limiting negative verification attempts
To prevent brute-force attacks on the password, the maximum allowed number of
negative password authentication attempts can be set using AUTHLIM. This mechanism
is disabled by setting AUTHLIM to a value of 000b, which is also the initial state of NTAG
I2C plus.
If AUTHLIM is not equal to 000b, each negative authentication verification is internally
counted. As soon as this internal counter reaches the number 2AUTHLIM, any further
negative password authentication leads to a permanent locking of the protected part
of the memory for the specified access modes. Independently, whether the provided
password is correct or not, each subsequent PWD_AUTH fails.
Any successful password verification, before reaching the limit of negative password
verification attempts, resets the internal counter to zero.
NT3H2111_2211 ils on h (Ref. 6 use of the be set to (Ref. 10
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8.7.3 Protection of configuration segments
The configuration pages can be protected by the password authentication as well. The
protection level is defined with the NFC_PROT bit.
The protection is enabled by setting the AUTH0 byte (see Table 10) to a value that is
within the addressable memory space.
8.8 Originality signature
NTAG I2C plus features a cryptographically supported originality check. With this feature,
it is possible to verify that the tag is using an IC manufactured by NXP Semiconductors.
This check can be performed on personalized tags as well.
NTAG I2C plus digital signature is based on standard Elliptic Curve Cryptography (ECC),
according to the ECDSA algorithm. The use of a standard algorithm and curve ensures
easy software integration of the originality check procedure in an application running on
an NFC device without specific hardware requirements.
Each NTAG I2C plus UID is signed with an NXP private key and the resulting 32-byte
signature is stored in a hidden part of the NTAG I2C plus memory during IC production.
This signature can be retrieved using the READ_SIG command and can be verified in
the NFC device by using the corresponding ECC public key provided by NXP. In case
the NXP public key is stored in the NFC device, the complete signature verification
procedure can be performed offline.
To verify the signature (for example with the use of the public domain crypto library
OpenSSL) the tool domain parameters shall be set to secp128r1, defined within the
standards for elliptic curve cryptography SEC (Ref. 10).
Details on how to check the signature value are provided in corresponding application
note (Ref. 6). It is foreseen to offer not only offline, as well as online way to verify
originality of NTAG I2C plus.
NT3H2111_2211 00133023! n Figure
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9 I2C commands
For details about I2C interface refer to Ref. 3.
SCL
SDA
SCL 1 2 3 7 8 9
1 2 3 7 8 9
ACKMSB
ACKMSB
Start
Condition
SDA
Input
SDA
Change
Stop
Condition
Stop
Condition
Start
Condition
SDA
SCL
SDA
001aao231
Figure 17. I2C bus protocol
The NTAG I2C plus supports the I2C protocol. This protocol is summarized in Figure
17. Any device that sends data onto the bus is defined as a transmitter, and any device
that reads the data from the bus is defined as a receiver. The device that controls the
data transfer is known as the "bus master", and the other as the "slave" device. A data
transfer can only be initiated by the bus master, which will also provide the serial clock for
synchronization. The NTAG I2C plus is always a slave in all communications.
9.1 Start condition
Start is identified by a falling edge of Serial Data (SDA), while Serial Clock (SCL) is
stable in the high state. A Start condition must precede any data transfer command. The
NTAG I2C plus continuously monitors SDA (except during a Write cycle) and SCL for a
Start condition, and will not respond unless one is given.
9.2 Stop condition
Stop is identified by a rising edge of SDA while SCL is stable and driven high. A Stop
condition terminates communication between the NTAG I2C plus and the bus master. A
Stop condition at the end of a Write command triggers the internal Write cycle.
WARNING: Host shall respect EEPROM programming time (~4 ms) after this Stop
condition in any case. If host sends next command too early, the memory may be
corrupted as ongoing EEPROM write cycle might get terminated.
soft reSe‘ feature d to execute a 5 ce can cause symbol the” rorgoflen' m sequently w Ham NT3.421113211 L613 p in between) as when heavy b“ is feawre is m communica cation, if a” MA for RE mm d the NTAG W configured via M
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9.3 I2C soft reset and NFC silence feature
With the bit NFCS_I2C_RST_ON_OFF (see Table 13) NTAG I2C plus enables two
features: a soft reset of the I2C subsystem, and NFC silence, in which the NFC
demodulator is disabled.
The I2C soft reset feature interprets an I2C repeated start (no I2C stop in between) as a
command to execute a soft reset of the I2C subsystem. This is useful when heavy bus
interference can cause the I2C interface to get stuck. A drawback of this feature is that
every start symbol then has to be terminated with a Stop, slowing down communication.
If a Stop is forgotten, the I2C interface is cleared and previous communication, if any,
is lost. Consequently when this feature is used, stop conditions after MEMA for READ/
WRITE (see Figure 18) and after REGA for READ/WRITE registers (see Figure 19) shall
be send.
The NFC silence feature disables the demodulator. When feature is set, no NFC
commands are received, and no replies are issued to commands that were not fully
received when NFC Silence was set. This feature allows the tag to "disappear" even if it
still is in the reader field. NTAG I2C plus will remain in the ISO state it was in when NFC
silence was enabled, until NFC silence is removed.
The combination of these two features in a single bit means that I2C soft reset is only
active during NFC silence.
9.4 Acknowledge bit (ACK)
The acknowledge bit is used to indicate a successful byte transfer. The bus transmitter,
whether it is the bus master or slave device, releases Serial Data (SDA) after sending
eight bits of data. During the ninth clock pulse period, the receiver pulls Serial Data
(SDA) low to acknowledge the receipt of the ninth data bits.
9.5 Data input
During data input, the NTAG I2C plus samples SDA on the rising edge of SCL. For
correct device operation, SDA must be stable during the rising edge of SCL, and the SDA
signal must change only when SCL is driven low.
9.6 Addressing
To start communication between a bus master and the NTAG I2C plus slave device,
the bus master must initiate a Start condition (see Section 9.1). Following this initiation,
the bus master sends the 7-bit device address, called Slave Address (SA) in following
figures.
The 8th bit is the Read/Write bit (R/W). This bit is set to 1b for Read and 0b for Write
operations.
Default device address of 55h results in AAh default I²C write address and ABh default
I²C read address.
As from I²C perspective I²C address can be configured via byte 0 of block 0. Reading this
block gives 04h, as it is returning UID0 (see Section 8.3.2). Therefore it is recommended
to us 04h as I²C write address (02h device address).
NOTE: Byte 0 of block 0 is used to configure the device address. The 7-bit device
address needs to be programmed in the 7 most significant bits of this byte. Least
NT3H2111_2211 5 gives an a s does not Table 12 Table 15‘ Default NTAG I’c address from I C e NTAG I20 065 canno as to this Figure 7
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significant bit needs to be set to 0b when programming the device address. E.g. to keep
default device address of 55h, byte 0 of block 0 needs to be set to AAh.
If a match occurs on the device address, the NTAG I2C plus gives an acknowledgment
on SDA during the 9th bit time. If the NTAG I2C plus address does not match, it deselects
itself from the bus and clears the register I2C_LOCKED (see Table 12).
Table 15. Default NTAG I2C address from I2C
Device / Slave Address (SA) R/W
b7 b6 b5 b4 b3 b2 b1 b0
Value[1] 10101011/0
[1] Initial values can be changed from I2C perspective
The I2C address of the NTAG I2C plus (byte 0 - block 0h) can only be modified by the I2C
interface. Both interfaces cannot read the device address and a READ command from
the NFC or I2C interface to this byte will return 04h (UID 0 - manufacturer ID for NXP
Semiconductors - see Figure 7).
9.7 READ and WRITE Operation
NT3H2111_2211
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aaa-012811
7 bits SA and `0'Host
Tag
Tag
Start Stop
Stop
D0 D1
D0 D1
D15
D15MEMA
A A A
A
A A A
A A
7 bits SA and `0'Host Start
Write:
Read:
7 bits SA and `1'StartStopMEMA
A A
Figure 18. I2C READ and WRITE operation
NT3H2111_2211 READ an Table 6 Figure 18 519 /W For the Figure 18 as! s
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The READ and WRITE operation always handle 16 bytes to be read or written (one block
- see Table 6)
For the READ operation (see Figure 18), following a Start condition, the bus master/host
sends the NTAG I2C slave address code (SA - 7 bits) with the Read/Write bit (R/W) set to
0b. The NTAG I2C plus acknowledges this (A), and waits for one address byte (MEMA),
which should correspond to the address of the block of memory (SRAM or EEPROM)
that is intended to be read. The NTAG I2C plus responds to a valid address byte with
an acknowledge (A). A Stop condition can be then issued. Then the host again issues a
start condition followed by the NTAG I2C plus slave address with the Read/Write bit set
to 1b. When I2C_CLOCK_STR is set to 0b, a pause of at least 50 μs shall be kept before
this start condition. The NTAG I2C plus acknowledges this (A) and sends the first byte
of data read (D0).The bus master/host acknowledges it (A) and the NTAG I2C plus will
subsequently transmit the following 15 bytes of memory read with an acknowledge from
the host after every byte. After the last byte of memory data has been transmitted by the
NTAG I2C plus, the bus master/host will acknowledge it and issue a Stop condition.
WARNING: READ sequence shall be atomic. Complete sequence of above figure needs
to be executed, otherwise that tag may go to undefined state and stretches the clock
infinitely.
For the WRITE operation (see Figure 18), following a Start condition, the bus master/
host sends the NTAG I2C plus slave address code (SA - 7 bits) with the Read/Write bit
(R/W) set to 0b. The NTAG I2C plus acknowledges this (A), and waits for one address
byte (MEMA), which should correspond to the address of the block of memory (SRAM or
EEPROM) that is intended to be written. The NTAG I2C plus responds to a valid address
byte with an acknowledge (A) and, in the case of a WRITE operation, the bus master/
host starts transmitting every 16 bytes (D0...D15) that shall be written at the specified
address with an acknowledge of the NTAG I2C plus after each byte (A). After the last
byte acknowledge from the NTAG I2C plus, the bus master/host issues a Stop condition.
WARNING: Host shall respect EEPROM programming time (~4 ms) after this Stop
condition in any case. If host sends next command too early, the memory may be
corrupted as ongoing EEPROM write cycle will get terminated.
The memory address accessible via the READ and WRITE operations can only
correspond to the EEPROM or SRAM (respectively 00h to 3Ah or F8h to FBh for NTAG
I2C plus 1k and 00h to 7Ah or F8h to FBh for NTAG I2C plus 2k).
NT3H2111_2211 ee Table 14 IW" liil liil || liil || | D:i:iiiii:iDi:ii:ii:iiniiiiiiiiiiifliiiiiiiiiiim | liil liil || || | Iiiiiiiiiiiiiiill \ Diii:i:iiiiDi:ii:ii:iiniiiiiiiii:ii:iiiiiiiiiiiiiiiiiiiiiiimj
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9.8 WRITE and READ register operation
In order to modify or read the session register bytes (see Table 14), NTAG I2C plus
requires the WRITE and READ register operation (see Figure 19).
aaa-012812
7 bits SA and `0'Host
Tag
Tag
Start
Stop
MEMA REGA
A A
A
A7 bits SA and `0'Host Start
Write:
Read:
7 bits SA and `1'StartStop
Stop
MEMA
MASK REGDAT
REGDAT
A
REGA
A A
A A A
Figure 19. WRITE and READ register operation
For the READ register operation, following a Start condition the bus master/host sends
the NTAG I2C plus slave address code (SA - 7 bits) with the Read/Write bit (R/W) set to
0b. The NTAG I2C plus acknowledges this (A), and waits for one address byte (MEMA)
which corresponds to the address of the block of memory with the session register bytes
(FEh). The NTAG I2C plus responds to the address byte with an acknowledge (A). Then
the bus master/host issues a register address (REGA), which corresponds to the address
of the targeted byte inside the block FEh (00h, 01h...to 07h) and then waits for the Stop
condition.
Then the bus master/host again issues a start condition followed by the NTAG I2C plus
slave address with the Read/Write bit set to 1b. The NTAG I2C plus acknowledges this
(A), and sends the selected byte of session register data (REGDAT) within the block
FEh. The bus master/host will acknowledge it and issue a Stop condition.
WARNING: READ sequence shall be atomic. Complete sequence of above figure needs
to be executed, otherwise that tag may go to undefined state and stretches the clock
infinitely.
For the WRITE register operation, following a Start condition, the bus master/host sends
the NTAG I2C plus slave address code (SA - 7 bits) with the Read/Write bit (R/W) set to
0b. The NTAG I2C plus acknowledges this (A), and waits for one address byte (MEMA),
which corresponds to the address of the block of memory within the session register
bytes (FEh). After the NTAG I2C plus acknowledge (A), the bus master/host issues a
register address (REGA), which corresponds to the address of the targeted byte inside
the block FEh (00h, 01h...to 07h). After acknowledgement (A) by NTAG I2C plus, the bus
master/host issues a MASK byte that defines exactly which bits shall be modified by a
1b bit value at the corresponding bit position. Following the NTAG I2C plus acknowledge
(A), the new register data (one byte - REGDAT) to be written is transmitted by the bus
master/host. The NTAG I2C plus acknowledges it (A), and the bus master/host issues a
stop condition.
NT3H2111_2211 NTAG ac plus has comma READ Ref. 2 Table 16 Table 16. Command overview Ref. 1
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10 NFC Command
NTAG activation follows the ISO/IEC 14443-3 Type A specification. After NTAG I2C
plus has been selected, it can either be deactivated using the ISO/IEC 14443 HALT
command, or NTAG commands (e.g. READ_SIG, PWD_AUTH, SECTOR_SELECT,
READ or WRITE) can be performed. For more details about the card activation refer to
Ref. 2.
10.1 NTAG I2C plus command overview
All available commands for NTAG I2C plus are shown in Table 16.
Table 16. Command overview
Command[1] ISO/IEC 14443 NFC FORUM Command code
(hexadecimal)
Request REQA SENS_REQ 26h (7 bit)
Wake-up WUPA ALL_REQ 52h (7 bit)
Anticollision CL1 Anticollision CL1 SDD_REQ CL1 93h 20h
Select CL1 Select CL1 SEL_REQ CL1 93h 70h
Anticollision CL2 Anticollision CL2 SDD_REQ CL2 95h 20h
Select CL2 Select CL2 SEL_REQ CL2 95h 70h
Halt HLTA SLP_REQ 50h 00h
GET_VERSION - - 60h
READ - READ 30h
FAST_READ - - 3Ah
WRITE - WRITE A2h
FAST_WRITE - - A6h
SECTOR_SELECT - SECTOR_SELECT C2h
PWD_AUTH - - 1Bh
READ_SIG - - 3Ch
[1] Unless otherwise specified, all commands use the coding and framing as described in Ref. 1.
10.2 Timing
The command and response timing shown in this document are not to scale and values
are rounded to 1 μs.
All given command and response times refer to the data frames, including start of
communication and end of communication. They do not include the encoding (like the
Miller pulses). An NFC device data frame contains the start of communication (1 "start
bit") and the end of communication (one logic 0 + 1-bit length of unmodulated carrier).
An NFC tag data frame contains the start of communication (1 "start bit") and the end of
communication (1-bit length of no subcarrier).
The minimum and maximum command response time is specified according to Ref. 1.
The minimum frame delay time from NFC tag to NFC device is 86.43 μs. The maximum
command response time is specified as a timeout value. Depending on the command,
NT3H2111_2211 ing tome IS ecificat Figure 20 Ref. 2 lasl dala bfl lransmmed by the NFC devlce first modulallan Mme NFC TAG IJ'IJ'LI'LI l u‘ ass-006996 Table 17 Table 17. ACK and NAK values NTAG IZC e shown in Table 18 Table 19
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the TACK value specified for command responses defines the NFC device to NFC tag
frame delay time. It does it for either the 4-bit ACK value specified or for a data frame.
All timing can be measured according to the ISO/IEC 14443-3 frame specification as
shown for the Frame Delay Time in Figure 20. For more details, refer to Ref. 2.
last data bit transmitted by the NFC device
FDT = (n* 128 + 84)/fc
first modulation of the NFC TAG
FDT = (n* 128 + 20)/fc
aaa-006986
128/fc
logic „1“
128/fc
logic „0“
256/fc
end of communication (E)
256/fc
end of communication (E)
128/fc
start of
communication (S)
communication (S)
128/fc
start of
Figure 20. Frame Delay Time (from NFC device to NFC tag), TACK and TNAK
Remark: Due to the coding of commands, the measured timings usually exclude (a part
of) the end of communication. Consider this factor when comparing the specified with the
measured times.
10.3 NTAG ACK and NAK
NTAG I2C plus uses a 4-bit ACK / NAK as shown in Table 17.
Table 17. ACK and NAK values
Code (4 bit) ACK/NAK
Ah Acknowledge (ACK)
0h NAK for invalid argument (i.e. invalid page address or wrong password)
1h NAK for parity or CRC error
3h NAK for Arbiter locked to I2C
4h Number of negative PWD_AUTH commands limit reached
7h NAK for EEPROM write error
10.4 ATQA and SAK responses
NTAG I2C plus replies to a REQA or WUPA command with the ATQA value shown in
Table 18. It replies to a Select CL2 command with the SAK value shown in Table 19. The
2-byte ATQA value is transmitted with the least significant byte first (44h).
NT3H2111_2211 Table 18. ATQA response of (he NTAG | C plus Table 19. SAK response of (he NTAG IZC plus The GET_ ion informal for the sp n Figure 21 Table 20 Table 21 ‘ |:I:| |:l 57us‘ e—. ”347125957 Table 20. GET_VERSION command
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Table 18. ATQA response of the NTAG I2C plus
Bit number
Sales type Hex value 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
NTAG I2C plus 00 44h 0000000001000100
Table 19. SAK response of the NTAG I2C plus
Bit number
Sales type Hex value 7 6 5 4 3 2 1 0
NTAG I2C plus 00h 00000000
Remark: The ATQA coding in bits 7 and 6 indicates the UID size according to ISO/IEC
14443.
Remark: The bit numbering in ISO/IEC 14443 specification starts with bit 1 as least
significant bit.
10.5 GET_VERSION
The GET_VERSION command is used to retrieve information about the NTAG family,
the product version, storage size and other product data required to identify the specific
NTAG I2C plus.
This command is also available on other NTAG products to have a common way of
identifying products across platforms and evolution steps.
The GET_VERSION command has no arguments and returns the version information
for the specific NTAG I2C plus type. The command structure is shown in Figure 21 and
Table 20.
Table 21 shows the required timing.
CRC
CRC
NFC device Cmd
Data
NTAG ,,ACK''
283 µs 868 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
aaa-006987
Figure 21. GET_VERSION command
Table 20. GET_VERSION command
Name Code Description Length
Cmd 60h Get product version 1 byte
CRC - CRC according to Ref. 1 2 bytes
NT3H2111_2211 Table 17 Seclion 10.3 Secllon m 2 "Tim 9" Table 22. GET_VERSION response for NTAG IZC plus The READ Semicond and cam Table 27 Table 28 e, to verify N chip produc Figure 24
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Name Code Description Length
Data - Product version information 8 bytes
NAK see Table 17 see Section 10.3 4 bit
Table 21. GET_VERSION timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
GET_VERSION n=9[1] TTimeOut 5 ms
[1] Refer to Section 10.2 "Timing".
Table 22. GET_VERSION response for NTAG I2C plus
Byte
no.
Description NTAG I2C plus
1k
NTAG I2C plus
2k
Interpretation
0 fixed Header 00h 00h
1 vendor ID 04h 04h NXP Semiconductors
2 product type 04h 04h NTAG
3 product subtype 05h 05h 50 pF I2C, Field detection
4 major product version 02h 02h 2
5 minor product version 02h 02h V2
6 storage size 13h 15h see following information
7 protocol type 03h 03h ISO/IEC 14443-3
compliant
The most significant 7 bits of the storage size byte are interpreted as an unsigned integer
value n. As a result, it codes the total available user memory size as 2n. If the least
significant bit is 0b, the user memory size is exactly 2n. If the least significant bit is 1b, the
user memory size is between 2n and 2n+1.
10.6 READ_SIG
The READ_SIG command returns an IC specific, 32-byte ECC signature, to verify NXP
Semiconductors as the silicon vendor. The signature is programmed at chip production
and cannot be changed afterwards. The command structure is shown in Figure 24 and
Table 27.
Table 28 shows the required timing.
NT3H2111_2211 |:l 5 s ‘—. 5,3.021657 Table 23. READ_SIG command Tabie 17 Section 10.3 Secllon in 2 "Timmg" only after a successful password v 0 configuration byte defines the s he password mechanism protec NFCiPROT bit either for write mand takes the password as ication acknowledge, PACK than 000b, 9 number of ccessful au ntication is | attempts, memory w T) to the p cted area, Figure 23 Table 25 Table 26
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CRC
CRC
AddrNFC device Cmd
Data
NTAG ,,ACK''
368 µs 2907 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
aaa-021657
Figure 22. READ_SIG command
Table 23. READ_SIG command
Name Code Description Length
Cmd 3Ch read ECC signature 1 byte
Addr 00h RFU, is set to 00h 1 byte
CRC - CRC according to Ref. 1 2 bytes
Signature - ECC Signature 32 bytes
NAK see Table 17 see Section 10.3 4 bit
Table 24. READ_SIG timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
READ_SIG n=9[1] TTimeOut 5 ms
[1] Refer to Section 10.2 "Timing".
Details on how to check the signature value are provided in the corresponding
Application note. It is foreseen to offer an online and offline way to verify originality of
NTAG I2C plus.
10.7 PWD_AUTH
A protected memory area can be accessed only after a successful password verification
using the PWD_AUTH command. The AUTH0 configuration byte defines the start of the
protected area. It specifies the first page that the password mechanism protects. The
level of protection can be configured using the NFC_PROT bit either for write protection
or read/write protection. The PWD_AUTH command takes the password as parameter
and, if successful, returns the password authentication acknowledge, PACK. By setting
the AUTHLIM configuration bits to a value larger than 000b, the number of unsuccessful
password verifications can be limited. Each unsuccessful authentication is then counted.
After reaching the limit (2AUTHLIM) of unsuccessful attempts, the memory write access or
the memory access at all (specified in NFC_PROT) to the protected area, is no longer
possible. The PWD_AUTH command is shown in Figure 23 and Table 25.
Table 26 shows the required timing.
NT3H2111_2211 ‘ |:|:l 623 us ‘ 368 us ‘ |:l . 4L 5‘ ‘—. ass-1721658 Table 25. PWD_AUTH command Ref. 2 Table 17 Seclion 10.3 Secllon m 2 "Tmmg" mmand require a start page pages. For e mple, if add urned. Spec conditions cessible m ry area. F Figure 24 Table 27 Table 28
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CRC
CRC
NFC device Cmd
NTAG ,,ACK''
623 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
PACK
368 µs
Pwd
aaa-021658
Figure 23. PWD_AUTH command
Table 25. PWD_AUTH command
Name Code Description Length
Cmd 1Bh password authentication 1 byte
Pwd - password 4 bytes
CRC - CRC according to Ref. 2 2 bytes
PACK - password authentication acknowledge 2 bytes
NAK see Table 17 see Section 10.3 4-bit
Table 26. PWD_AUTH timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
PWD_AUTH n=9[1] TTimeOut 5 ms
[1] Refer to Section 10.2 "Timing".
Remark: It is strongly recommended to change - and diversify for each tag - the
password and PACK from its delivery state at tag issuing.
10.8 READ
The READ command requires a start page address, and returns the 16 bytes of four
NTAG I2C plus pages. For example, if address (Addr) is 03h then pages 03h, 04h,
05h, 06h are returned. Special conditions apply if the READ command address is near
the end of the accessible memory area. For details on those cases and the command
structure, refer to Figure 24 and Table 27.
Table 28 shows the required timing.
NT3H2111_2211 ans—name Table 27. READ command Ref. 1 Table 17 Section 10.3 Secllon m 2 mmmg" Figure 25 Table 29
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CRC
CRC
AddrNFC device Cmd
Data
NTAG ,,ACK''
368 µs 1548 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
aaa-006988
Figure 24. READ command
Table 27. READ command
Name Code Description Length
Cmd 30h read four pages 1 byte
Addr - start page address 1 byte
CRC - CRC according to Ref. 1 2 bytes
Data - Data content of the addressed pages 16 bytes
NAK see Table 17 see Section 10.3 4 bit
Table 28. READ timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
READ n=9[1] TTimeOut 5 ms
[1] Refer to Section 10.2 "Timing".
In the initial state of NTAG I2C plus, all memory pages are allowed as Addr parameter to
the READ command:
Page address from 00h to E9h and pages ECh and EDh for NTAG I2C plus 1k and 2k
Page address from 00h to FFh (Sector 1) for NTAG I2C plus 2k only
SRAM buffer address when pass-through mode is enabled
Addressing a start memory page beyond the limits above results in a NAK response from
NTAG I2C plus.
In case a READ command addressing start with a valid memory area but extends over
an invalid memory area, the content of the invalid memory area will be reported as 00h.
10.9 FAST_READ
The FAST_READ command requires a start page address and an end page address and
returns all n*4 bytes of the addressed pages. For example, if the start address is 03h and
the end address is 07h, then pages 03h, 04h, 05h, 06h and 07h are returned.
For details on those cases and the command structure, refer to Figure 25 and Table 29.
NT3H2111_2211 Table 30 \ :: ‘57us‘ Table 29. FAST_READ command Ref. 1 Table 17 Section 10.3 Secllon m 2 mmmg"
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Table 30 shows the required timing.
CRC
CRC
StartAddrNFC device Cmd
Data
NTAG ,,ACK''
453 µs depending on nr of read pages
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
EndAddr
aaa-006989
Figure 25. FAST_READ command
Table 29. FAST_READ command
Name Code Description Length
Cmd 3Ah read multiple pages 1 byte
StartAddr - start page address 1 byte
EndAddr - end page address 1 byte
CRC - CRC according to Ref. 1 2 bytes
Data - data content of the addressed pages n*4 bytes
NAK see Table 17 see Section 10.3 4 bit
Table 30. FAST_READ timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
FAST_READ n=9[1] TTimeOut 5 ms
[1] Refer to Section 10.2 "Timing".
In the initial state of NTAG I2C plus, all memory pages are allowed as StartAddr
parameter to the FAST_READ command:
Page address from 00h to E9h and pages ECh and EDh for NTAG I2C plus 1k and 2k
Page address from 00h to FFh (Sector 1) for NTAG I2C plus 2k only
SRAM buffer address when pass-through mode is enabled
If the start addressed memory page (StartAddr) is outside of accessible area, NTAG I2C
plus replies a NAK.
In case the FAST_READ command starts with a valid memory area but extends over an
invalid memory area, the content of the invalid memory area will be reported as 00h.
The EndAddr parameter must be equal to or higher than the StartAddr.
NT3H2111_2211 Th of data int 9 ad Figure 26 Table 371 Table 32 ass-0069917 Table 31. WRITE command Ref. 1 Table 17 Section 10.3 Sechon m 2 "Timmg"
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Remark: The FAST_READ command is able to read out the entire memory of one sector
with one command. Nevertheless, the receive buffer of the NFC device must be able to
handle the requested amount of data as no chaining is possible.
10.10 WRITE
The WRITE command requires a page address, and writes 4 bytes of data into the
addressed NTAG I2C plus page. The WRITE command is shown in Figure 26 and Table
31.
Table 32 shows the required timing.
CRCAddrNFC device Cmd
NTAG ,,ACK''
708 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
ACK
57 µs
Data
aaa-006990
Figure 26. WRITE command
Table 31. WRITE command
Name Code Description Length
Cmd A2h write one page 1 byte
Addr - page address 1 byte
Data - data 4 bytes
CRC - CRC according to Ref. 1 2 bytes
NAK see Table 17 see Section 10.3 4 bit
Table 32. WRITE timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
WRITE n=9[1] TTimeOut 5 ms
[1] Refer to Section 10.2 "Timing".
In the initial state of NTAG I2C plus, the following memory pages are valid Addr
parameters to the WRITE command:
Page address from 02h to E9h (Sector 0) for NTAG I2C plus 1k and 2k
Page address from 00h to FFh (Sector 1) for NTAG I2C plus 2k
SRAM buffer addresses when pass-through mode is enabled
NT3H2111_2211 AST_WR|TE a ws to write d -through mod and require 4 bytes of d me the NT Figure 26 Table 31 Table 32 ‘ |:| l5 5l |:| ‘57“5‘ ass-M1555 Table 33. FAST_WRITE command Ref. 1 Table 17 Table 17 Section 10.3 Section 10.3
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Addressing a memory page beyond the limits above results in a NAK response from
NTAG I2C plus.
Pages that are locked against writing cannot be reprogrammed using any write
command. The locking mechanisms include static and dynamic lock bits, as well as the
locking of the configuration pages.
10.11 FAST_WRITE
The FAST_WRITE allows to write data in ACTIVE state to the complete SRAM (64 bytes)
in pass-through mode, and requires the start block address (F0h), end address (FFh) and
writes 64 bytes of data into the NTAG I2C plus SRAM. The FAST_WRITE command is
shown in Figure 26 and Table 31.
WARNING: Data is written directly to SRAM. If received CRC at the end of transmission
is wrong and response was a NAK, received (corrupted) data is still in SRAM. Hence it is
recommended to implement a protocol on top to ensure data integrity (e.g. include own
CRC at the end of the payload) when using SRAM.
Table 32 shows the required timing.
CRCStart EndNFC device Cmd
NTAG ,,ACK''
5881 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
ACK
57 µs
Data
aaa-021659
Figure 27. FAST_WRITE command
Table 33. FAST_WRITE command
Name Code Description Length
Cmd A6h write complete SRAM 1 byte
START_ADDR F0h start SRAM in pass-through mode 1 byte
END_ADDR FFh end SRAM in pass-through mode 1 byte
Data - data 64 bytes
- CRC CRC according to Ref. 1 2 bytes
ACK see Table 17 see Section 10.3 4 bit
NAK see Table 17 see Section 10.3 4 bit
NT3H2111_2211 secuon m 2 "Tmmg" Figure 28 Table 35 LE 55 Table 36 Table 35‘ SECTOR_SELECT command
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Table 34. FAST_WRITE timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
FAST_WRITE n=9[1] TTimeOut 5 ms
[1] Refer to Section 10.2 "Timing".
10.12 SECTOR SELECT
The SECTOR SELECT command consists of two commands packet: the first one is the
SECTOR SELECT command (C2h), FFh and CRC. Upon an ACK answer from the Tag,
the second command packet needs to be issued with the related sector address to be
accessed and 3 bytes RFU.
To successfully access to the requested memory sector, the tag shall issue a passive
ACK, which is sending NO REPLY for more than 1 ms after the CRC of the second
command set.
The SECTOR SELECT command is shown in Figure 28 and Table 35.
Table 36 shows the required timing.
aaa-014051
CRCFFhNFC device Cmd
SecNo 00h 00h 00h CRC
368 µs
NTAG I2C ,,NAK''
NTAG I2C ,,ACK''
NTAG I2C ,,NAK''
NTAG I2C ,,ACK''
NAK
Time out
NFC device
TTimeOut
TNAK
TACK
57 µs
ACK
57 µs
NAK
<1ms
>1ms
537 µs
57 µs
Passive ACK
SECTOR SELECT packet 2
SECTOR SELECT packet 1
(any reply)
(no reply)
Figure 28. SECTOR_SELECT command
Table 35. SECTOR_SELECT command
Name Code Description Length
Cmd C2h sector select 1 byte
NT3H2111_2211 Ref. 1 Table 17 Secfion 10.3
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Name Code Description Length
FFh - 1 byte
CRC - CRC according to Ref. 1 2 bytes
SecNo - Memory sector to be selected
(00h - FEh)
1 byte
NAK see Table 17 see Section 10.3 4 bit
Table 36. SECTOR_SELECT timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
SECTOR_SELECT n=9[1] TTimeOut 5 ms
[1] Refer to Section 10.2 "Timing".
NT3H2111_2211 Table 14 y set to 1b if FC inten‘ac pond to an Table 14 face has read the st page of K (see Table 13 Table 14 Table 14
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11 Communication and arbitration between NFC and I2C interface
If both interfaces are powered by their corresponding source, only one interface shall
have access to the memory according to the "first-come, first-serve" principle.
In NS_REG, the two status bits I2C_LOCKED and RF_LOCKED reflect the status of
the NTAG I2C plus memory access and indicate which interface is locking the memory
access. At power-on, both bits are 0b, setting the arbitration in idle mode.
In the case arbiter locks to the I2C interface, an NFC device can still read the session
registers. If the NFC state machine is in ACTIVE state, only the SECTOR SELECT
command is allowed. But any other command requiring EEPROM access like READ or
WRITE is handled as an illegal command and replied to with a NAK value.
In the case where the memory access is locked to the NFC interface, the I2C host can
still access the session register, by issuing a 'Register READ/WRITE' command. All other
read or write commands will be replied to with a NACK to the I2C host.
11.1 Pass-through mode not activated
PTHRU_ON_OFF = 0b (see Table 14) indicates non-pass-through mode.
11.1.1 I2C interface access
If the tag is in the IDLE or HALT state (NFC state after POR or HALT-command) and the
correct I2C slave address of NTAG I2C plus is received following the START condition,
the bit I2C_LOCKED will be automatically set to 1b. If I2C_LOCKED = 1b, the I2C
interface has access to the tag memory and the tag will respond with a NACK to any
memory READ/WRITE command on the NFC interface other than reading the session
register bytes during this time.
I2C_LOCKED must be either reset to 0b at the end of the I2C sequence or will be cleared
automatically after the end of the watch dog timer.
11.1.2 NFC interface access
The arbitration will allow the NFC interface read and write accesses to EEPROM only
when I2C_LOCKED is set to 0b.
RF_LOCKED is automatically set to 1b if the tag receives a valid command (EEPROM
Access Commands) on the NFC interface. If RF_LOCKED = 1b, the tag is locked to the
NFC interface and will not respond to any command from the I2C interface other than
READ register command (see Table 14).
RF_LOCKED is automatically set to 0b in one of the following conditions
At POR or if the NFC field is switched off
If the tag is set to the HALT state with a HALT command on the NFC interface
If the memory access command is finished on the NFC interface
When the NFC interface has read the last page of the NDEF message specified in
LAST_NDEF_BLOCK (see Table 13 and Table 14) the bit NDEF_DATA_READ - in the
register NS_REG see Table 14 - is set to 1b and indicates to the I2C interface that, for
example, new NDEF data can be written.
NT3H2111_2211 er mirroring is Section 11.3 the memory m ed, the SRA s new map me the us FC interface using the S M mirror Io age addr _MIRROR_ (Table 13 Table 14 Table 37 Table 38 Table 37. Illustration of (he SRAM memory addressing via the NFC in 1b and SRAM_MIRROR_BLOCK set to 01m [or the NTAG IZC plus 1k
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11.2 SRAM buffer mapping with Memory Mirror enabled
With SRAM_MIRROR_ON_OFF= 1b, the SRAM buffer mirroring is enabled. This mode
cannot be combined with the pass-through mode (see Section 11.3).
With the memory mirror enabled, the SRAM is now mapped into the user memory from
the NFC interface perspective using the SRAM mirror lower page address specified in
SRAM_MIRROR_BLOCK byte (Table 13 and Table 14). See Table 37 (NTAG I2C plus
1k) and Table 38 (NTAG I2C plus 2k) for an illustration of this SRAM memory mapping
when SRAM_MIRROR_BLOCK is set to 01h.
Password protection to this mapped SRAM may be enabled by enabling password
authentication and setting SRAM_PROT bit to 1b.
In contrary to password protection, for read only locking there are no special lock bits for
the SRAM. Whenever user EEPROM blocks are locked to read-only with static and/or
dynamic lock bits, potential mirrored SRAM blockes are read-only, too.
The tag must be VCC powered to make this mode work, because without VCC, the
SRAM will not be accessible via NFC powered only.
When mapping the SRAM buffer to the user memory, the user shall be aware that all
data written into the SRAM will be lost once the NTAG I2C plus is no longer powered
from the I2C side (as SRAM is a volatile memory).
Table 37. Illustration of the SRAM memory addressing via the NFC interface (with SRAM_MIRROR_ON_OFF set to
1b and SRAM_MIRROR_BLOCK set to 01h) for the NTAG I2C plus 1k
Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
0 00h Serial number (UID) READ
1 01h Serial number (UID) Internal READ
2 02h Internal Static lock bytes READ/R&W
3 03h Capability Container (CC) READ&WRITE
4 04h
... ...
19 13h
SRAM READ&WRITE
... ... Unprotected user memory READ&WRITE
AUTH0 AUTH0
... ...
225 E1h
Protected user memory READ READ&WRITE
226 E2h Dynamic lock bytes 00h R&W/READ
227 E3h RFU RFU RFU AUTH0 READ READ&WRITE
228 E4h ACCESS RFU RFU RFU READ READ&WRITE
229 E5h PWD READ READ&WRITE
230 E6h PACK RFU RFU READ READ&WRITE
231 E7h PT_I2C RFU RFU RFU READ READ&WRITE
232 E8h
0
233 E9h Configuration registers see 8.3.12
NT3H2111_2211 Table 38. Illustration of (he SRAM memory addressing via the NFC in 1b and SRAM_MIRROR_BLOCK set (0 01h) [or the NTAG IZC plus 2k
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Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
234 EAh
235 EBh Invalid access - returns NAK n.a.
236 ECh
237 EDh Session registers see 8.3.12
238 EEh
239 EFh Invalid access - returns NAK n.a.
240 F0h
... ...
255 FFh
Invalid access - returns NAK n.a.
1 ... ... Invalid access - returns NAK n.a.
2 ... ... Invalid access - returns NAK n.a.
0 00h
... ... Invalid access - returns NAK n.a.
248 F8h
249 F9h Session registers see 8.3.12
... ...
3
255 FFh Invalid access - returns NAK n.a.
Table 38. Illustration of the SRAM memory addressing via the NFC interface (with SRAM_MIRROR_ON_OFF set to
1b and SRAM_MIRROR_BLOCK set to 01h) for the NTAG I2C plus 2k
Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
0 00h Serial number (UID) READ
1 01h Serial number (UID) Internal READ
2 02h Internal Static lock bytes READ/R&W
3 03h Capability Container (CC) READ&WRITE
4 04h
... ...
19 13h
SRAM READ&WRITE
... ... Unprotected user memory READ&WRITE
AUTH0 AUTH0
... ...
225 E1h
Protected user memory READ READ&WRITE
226 E2h Dynamic lock bytes 00h R&W/READ
0
227 E3h RFU RFU RFU AUTH0 READ READ&WRITE
NT3H2111_2211 Table 14 access to the S M buffer via the Section 11.3.2 Section 11.3.3
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Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
228 E4h ACCESS RFU RFU RFU READ READ&WRITE
229 E5h PWD READ READ&WRITE
230 E6h PACK RFU RFU READ READ&WRITE
231 E7h PT_I2C RFU RFU RFU READ READ&WRITE
232 E8h
233 E9h Configuration registers see 8.3.12
234 EAh
235 EBh Invalid access - returns NAK n.a.
236 ECh
237 EDh Session registers see 8.3.12
238 EEh
239 EFh Invalid access - returns NAK n.a.
240 F0h
... ...
255 FFh
Invalid access - returns NAK n.a.
0 00h
... ...1
255 FFh
(Un-)protected user memory READ&WRITE
2 ... ... Invalid access - returns NAK n.a.
0 00h
... ... Invalid access - returns NAK n.a.
248 F8h
249 F9h Session registers see 8.3.12
... ...
3
255 FFh Invalid access - returns NAK n.a.
11.3 Pass-through mode
PTHRU_ON_OFF = 1b (see Table 14) enables and indicates pass-through mode.
Password protection for pass-through mode may be enabled by enabling password
authentication and setting SRAM_PROT bit to 1b.
To handle large amount of data transfer from one interface to the other, NTAG I2C plus
offers the pass-through mode where data is transferred via a 64 byte SRAM. This buffer
offers fast write access and unlimited write endurance as well as an easy handshake
mechanism between the two interfaces.
This buffer is mapped directly at the end of the Sector 0 of NTAG I2C plus.
In both directions, the principle of access to the SRAM buffer via the NFC and I2C
interface is exactly the same (see Section 11.3.2 and Section 11.3.3).
NT3H2111_2211 The pass-throu powered. The Section 8.3.12 Table 39. Illustration of the SRAM memory addr (PTHRU_ON_OFF set to1bHor the NTAG lzc1k Table 14 Ref. 8 ) is used as thet minator page. One aces is read/wri , the control wou Section 11.3.2 Section 11.3.3
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The data flow direction must be set with the TRANSFER_DIR bit (see Table 14) within
the current communication session using the session registers (it can only be set via
the I2C interfaces) or for the configuration bits after POR (in this case both NFC and
I2C interface can set it). This pass-through direction setting avoids locking the memory
access during the data transfer from one interface to the SRAM buffer.
The pass-through mode can only be enabled via I2C interface when both interfaces are
powered. The PTHRU_ON_OFF bit, located in the session registers NC_REG (see
Section 8.3.12), needs to be set to 1b. In case one interface powers off, the pass-through
mode is disabled automatically.
NTAG I2C plus introduces in addition to the FAST_READ command a FAST_WRITE
command. With this new command in ACTIVE state whole SRAM can be written at once,
which improves the total pass-through performance significantly.
For more information read related application note Ref. 8.
11.3.1 SRAM buffer mapping
In pass-through mode, the SRAM of NTAG I2C plus is mirrored to pages F0h to FFh of
Sector 0.
The last page/block of the SRAM (page FFh) is used as the terminator page. Once the
terminator page/block in the respective interfaces is read/written, the control would be
transferred to other interface (NFC/I2C) - see Section 11.3.2 and Section 11.3.3 for more
details.
Accordingly, the application can align on the reader and host side to transfer 16/32/48/64
bytes of data in one pass-through step by only using the last blocks/page of the SRAM
buffer.
For best performance in addition to the FAST_READ, the FAST_WRITE command
should be used.
Table 39. Illustration of the SRAM memory addressing via the NFC interface in pass-through mode
(PTHRU_ON_OFF set to 1b) for the NTAG I2C 1k
Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
0 00h Serial number (UID) READ
1 01h Serial number (UID) Internal READ
2 02h Internal Static lock bytes READ/R&W
3 03h Capability Container (CC) READ&WRITE
4 04h
... ... Unprotected user memory READ&WRITE
AUTH0 AUTH0
... ...
225 E1h
Protected user memory READ READ&WRITE
226 E2h Dynamic lock bytes 00h R&W/READ
227 E3h RFU RFU RFU AUTH0 READ READ&WRITE
228 E4h ACCESS RFU RFU RFU READ READ&WRITE
0
229 E5h PWD READ READ&WRITE
NT3H2111_2211 Table 40. Illustration of (he SRAM memory addr (PTHRU_ON_OFF set to 1b) for (he NTAG I20 2k
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Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
230 E6h PACK RFU RFU READ READ&WRITE
231 E7h PT_I2C RFU RFU RFU READ READ&WRITE
232 E8h
233 E9h Configuration registers see 8.3.12
234 EAh
235 EBh Invalid access - returns NAK n.a.
236 ECh
237 EDh Session registers see 8.3.12
238 EEh
239 EFh Invalid access - returns NAK n.a.
240 F0h
... ...
255 FFh
SRAM READ&WRITE
1 ... ... Invalid access - returns NAK n.a.
2 ... ... Invalid access - returns NAK n.a.
0 00h
... ... Invalid access - returns NAK n.a.
248 F8h
249 F9h Session registers see 8.3.12
... ...
3
255 FFh Invalid access - returns NAK n.a.
Table 40. Illustration of the SRAM memory addressing via the NFC interface in pass-through mode
(PTHRU_ON_OFF set to 1b) for the NTAG I2C 2k
Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
0 00h Serial number (UID) READ
1 01h Serial number (UID) Internal READ
2 02h Internal Static lock bytes READ/R&W
3 03h Capability Container (CC) READ&WRITE
4 04h
... ... Unprotected user memory READ&WRITE
AUTH0 AUTH0
... ...
0
225 E1h
Protected user memory READ READ&WRITE
NT3H2111_2211 Table 14
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Page address Byte number within a page
Sector
address Dec. Hex. 0 1 2 3
Access cond.
ACTIVE state
Access cond.
AUTH. state
226 E2h Dynamic lock bytes 00h R&W/READ
227 E3h RFU RFU RFU AUTH0 READ READ&WRITE
228 E4h ACCESS RFU RFU RFU READ READ&WRITE
229 E5h PWD READ READ&WRITE
230 E6h PACK RFU RFU READ READ&WRITE
231 E7h PT_I2C RFU RFU RFU READ READ&WRITE
232 E8h
233 E9h Configuration registers see 8.3.12
234 EAh
235 EBh Invalid access - returns NAK n.a.
236 ECh
237 EDh Session registers see 8.3.12
238 EEh
239 EFh Invalid access - returns NAK n.a.
240 F0h
... ...
255 FFh
SRAM READ&WRITE
0 00h
... ...1
255 FFh
(Un-)protected user memory READ&WRITE
2 ... ... Invalid access - returns NAK n.a.
0 00h
... ... Invalid access - returns NAK n.a.
248 F8h
249 F9h Session registers see 8.3.12
... ...
3
255 FFh Invalid access - returns NAK n.a.
11.3.2 NFC to I2C data transfer
If the NFC interface is enabled (RF_LOCKED = 1b) and data is written to the terminator
page FFh of the SRAM via the NFC interface, at the end of the WRITE command, bit
SRAM_I2C_READY is set to 1b and bit RF_LOCKED is set to 0b automatically, and the
NTAG I2C plus is locked to the I2C interface.
To signal the host that data is ready to be read following mechanisms are in place:
The host polls/reads bit SRAM_I2C_READY from NS_REG (see Table 14) to know if
data is ready in SRAM
NT3H2111 2211 ates to the by progra Table 13 Figure 29 3357021550
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A trigger on the FD pin indicates to the host that data is ready to be read from SRAM.
This feature can be enabled by programming bits 5:2 (FD_OFF, FD_ON) of the
NC_REG appropriately (see Table 13)
This is illustrated in the Figure 29.
If the tag is addressed with the correct I2C slave address, the I2C_LOCKED bit is
automatically set to 1b (according to the interface arbitration). After a READ from
the terminator page of the SRAM, bit SRAM_I2C_READY and bit I2C_LOCKED are
automatically reset to 0b, and the tag returns to the arbitration idle mode where, for
example, further data from the NFC interface can be transferred.
aaa-021660
Enable pass through
PTHRU_ON_OFF = 1b
RF starts writing data
to SRAM buffer
Last 4 bytes of
SRAM written by RF
Start reading
SRAM by I2C
Last 16 bytes
SRAM by I2C
ON
OFF
HIGH
LOW
RF field
FD pin
Event
I2C_LOCKED
RF_LOCKED
SRAM_I2C_READY
RF_FIELD_PRESENT
0
3Dh 7Dh
more data available?
3Dh
t
0
NS_REG
PTHRU_ON_OFF = 0b,
FD_ON = 11b, FD_OFF = 11b
SRAM_MIRROR_ON_OFF = 0b
TRANSFER_DIR = 1b
NC_REG
RF OFF
1
0 01 0
0 1
0
0
1
1
Figure 29. Illustration of the Field detection feature in combination with the pass-through mode for data transfer
from NFC to I2C
11.3.3 I2C to NFC data transfer
If the I2C interface is enabled (I2C_LOCKED is 1b) and data is written to the terminator
block FBh of the SRAM via the I2C interface, at the end of the WRITE command, bit
SRAM_RF_READY is set to 1b and bit I2C_LOCKED is automatically reset to 0b to set
the tag in the arbitration idle state.
NT3H2111 2211 Table st thal data h bled by pro Table 13 Flgure 30 _ IIIIIIIIII . my, I IIIII" _ m _ fillllllll, .IIIIL IIIII . , III I II. _ , _rIIIIIIIIII_ W , q IIIIIIIIII . 7 I II. _ , _IIIII|_ , , IIIIIIIIII , . . IIIIIIIIIII , , IIIIIIIIII , . . I II. _ W _r||||||||||_ , lL _ IIIIIIIIII . I IIII. _ _I|||||||||_
NXP Semiconductors NT3H2111_2211
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The RF_LOCKED bit is then automatically set to 1b (according to the interface
arbitration). After a READ or FAST_READ command involving the terminator page of
the SRAM, bit SRAM_RF_READY and bit RF_LOCKED are automatically reset to 0b
allowing the I2C interface to further write data into the SRAM buffer.
To signal to the host that further data is ready to be written, the following mechanisms
are in place:
The NFC interface polls/reads the bit SRAM_RF_READY from NS_REG (see Table
14) to know if new data has been written by the I2C interface in the SRAM
A trigger on the FD pin indicates to the host that data has been read from SRAM by
the NFC interface. This feature can be enabled by programming bits 5:2 (FD_OFF,
FD_ON) of the NC_REG appropriately (see Table 13)
The above mechanism is illustrated in the Figure 30.
1
aaa-021661
Enable pass through
PTHRU_ON_OFF = 1b
I2C starts writing
data to SRAM buffer
Last 4 bytes written
to SRAM by I2C
Start reading
SRAM by RF
Last 4 bytes
read by RF
ON
OFF
HIGH
LOW
RF field
FD pin
Event
I2C_LOCKED
RF_LOCKED
SRAM_RF_READY
RF_FIELD_PRESENT
0
3Ch 7Ch
more data available?
3Ch
t
0 0
NS_REG
PTHRU_ON_OFF = 0b,
FD_ON = 11b, FD_OFF = 11b
SRAM_MIRROR_ON_OFF = 0b
TRANSFER_DIR = 0b
NC_REG
RF OFF
1
0 01
0 1
0
0
1
Figure 30. Illustration of the Field detection signal feature in combination with pass-through mode for data
transfer from I2C to NFC
NT3H2111_2211
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12 Limiting values
Exceeding the limits of one or more values in reference may cause permanent damage
to the device. Exposure to limiting values for extended periods may affect device
reliability.
Table 41. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1][2]
Symbol Parameter Conditions Min Max Unit
Tstg storage temperature -55 +125 °C
Tj(max) maximum junction temperature - +105 °C
VESD electrostatic discharge voltage
(Human Body model)
[3] - 2 kV
VESD electrostatic discharge voltage
(Charge Device model)
[4] - 1 kV
VDD supply voltage on pin VCC -0.5 4.6 V
Viinput voltage on pin FD, SDA,
SCL
-0.5 4.6 V
Iiinput current on pin LA, LB - 40 mA
Vi(RF) RF input voltage on pin LA, LB - 4.6 Vpeak
[1] Stresses above one or more of the limiting values may cause permanent damage to the device.
[2] Exposure to limiting values for extended periods may affect device reliability.
[3] ANSI/ESDA/JEDEC JS-001
[4] ANSI/ESDA/JEDEC JS-002
NT3H2111_2211 Table 42. Characteristics 7,777
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13 Characteristics
13.1 Electrical characteristics
Table 42. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Ciinput capacitance LA - LB, on chip - CIC, f=13.56
MHz,
VLA-LB=2.4 VRMS
44 50 56 pF
fiinput frequency - 13.56 - MHz
Tamb operating ambient
temperature
-40 25 +105 [1] °C
RTH_JA thermal resistance JEDEC 2s2p board and XQFN8
package
- 150 - K/W
RTH_JA thermal resistance JEDEC 2s2p board and TSSOP8
package
- 211 - K/W
RTH_JA thermal resistance JEDEC 2s2p board and SO8
package
- 115 - K/W
Energy harvesting characteristics
Vout,max output voltage generated at the Vout pin, Class 5
antenna, 14 A/m, load current 1 mA
[2] - 3.3 V
I2C interface characteristics
VCC supply voltage supplied via VCC only 1.67 - 3.6 V
VCC=1.8 V I2C; idle bus - 160 - μAIDD supply current
VCC=3.3 V I2C; idle bus - 195 - μA
VCC=1.8 V I2C@400KHz - - 185 μA
VCC=2.5 V I2C@400KHz - - 210 μA
IDD supply current
VCC=3.3 V I2C@400KHz - - 240 μA
I2C pin characteristics
IOL= 3 mA; VCC > 2 V - - 0.4 VVOL LOW-level output voltage
IOL= 2 mA; VCC < 2 V - - 0.2*VCC V
VIH HIGH-level input voltage 0.7*VCC --V
VIL LOW-level input voltage - - 0.3*VCC V
Ciinput capacitance SCL and SDA pin - 2.4 - pF
ILleakage current 0 V and VCC,max - - 10 μA
thigh SCL high time fast mode 400 kHz 950 - - ns
FD pin characteristics
IOL= 4 mA; VCC > 2 V - - 0.4 VVOL LOW-level output voltage
IOL= 3 mA; VCC < 2 V - - 0.2*VCC V
ILleakage current - 1.5 10 μA
EEPROM characteristics
NT3H2111_2211
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Symbol Parameter Conditions Min Typ Max Unit
tret retention time Tamb 20 50 - year
Nendu(W) write endurance Tamb 200000 - - cycle
Nendu(W) write endurance -40°C to 95°C 500000 1000000 - cycle
[1] Dependent on PCB design and operating conditions
[2] Minimum value depends on available field strength and load current conditions. For details refer to [7]
AN11578 NTAG I2C Energy Harvesting
NT3H2111_2211 XQFNE: plastic, extremely thin quad rm package; no leads; alsrminals: body1.6 x1.6 x 0.5 mm kam$uu \ \ + \ \ T a DA (:7 (E) 0 AM o w ‘CW 4st E© 44—9945
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14 Package outline
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT902-3 - - -
MO-255
- - -
sot902-3_po
11-08-16
11-08-18
Unit
mm
max
nom
min
0.5 0.05
0.00
1.65
1.60
1.55
1.65
1.60
1.55
0.6 0.5 0.1 0.05
A
Dimensions
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
XQFN8: plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6 x 1.6 x 0.5 mm SOT902-3
A1b
0.25
0.20
0.15
D E e e1L
0.45
0.40
0.35
v w
0.05
y y1
0.05
0 1 2 mm
scale
terminal 1
index area
B AD
E
X
C
y
C
y1
terminal 1
index area
3
L
e1
e
AC Bv
Cw
2
1
5
6
7
metal area
not for soldering
8
4
e1
e
b
A1
A
detail X
Figure 31. Package outline SOT902-3 (XQFN8)
NT3H2111_2211 TSSOPS: plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1 , % afl/m ‘ 1:J%1 a M ‘Li \\”L—
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UNIT A1
A
max. A2A3bpLHELpw yv
c eD(1) E(2) Z(1) θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.15
0.05
0.95
0.80
0.45
0.25
0.28
0.15
3.1
2.9
3.1
2.9 0.65 5.1
4.7
0.70
0.35
0.1 0.10.10.94
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.7
0.4
SOT505-1 99-04-09
03-02-18
wM
bp
D
Z
e
0.25
1 4
85
θ
A
A2A1
Lp
(A3)
detail X
L
HE
E
c
vMA
X
A
y
2.5 5 mm0
scale
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1
1.1
pin 1 index
Figure 32. Package outline SOT505-1 (TSSOP8)
NT3H2111_2211 SOB: plastic small outline package; 8 leads; body width 33 mm a??? 7 t: J n ‘ L7 SOT96-1 l l 4+ l l LEE\ D VEE El: *1: E l l
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UNIT A
max. A1A2A3bpc D(1) E(2) (1)
e HEL LpQ Zywv θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10
1.45
1.25 0.25 0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8 1.27 6.2
5.8 1.05 0.7
0.6
0.7
0.3 8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
1.0
0.4
SOT96-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
4
5
pin 1 index
1
8
y
076E03 MS-012
0.069 0.010
0.004
0.057
0.049 0.01 0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15 0.05 0.244
0.228
0.028
0.024
0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
99-12-27
03-02-18
Figure 33. Package outline SOT96-1 (SO8)
NT3H2111_2211 AM
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15 Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,
JESD625-A or equivalent standards.
NT3H2111_2211 Table 43. Abbreviations
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16 Abbreviations
Table 43. Abbreviations
Acronym Description
ASID Assembly Sequence ID
DBSN Diffusion Batch Sequence number
POR Power-On Reset
NT3H2111_2211 | C-bus specification and NXP standard UM10204 http://www.nxp.com/documents/user manual/UM10204.odf AN’I1276 NTAG Amen NXP Application Note http://www.nxD.com/documents/apolication note/AN11276.Ddf AN’I1350 NTAGZ1X O NXP Application Note http://www.nxp.com/resfricted documents/53420/AN11350.0df AN’I1578 NTAG I20 E NXP Application Note http://www.nxp.com/documents/application note/AN1157B.pdf AN11579 How to use NXP Application Note http://www.nxD.com/documents/apolication note/AN11579.Ddf AM 1786 NTAG I20 p NXP Application Note http://www.nxD.com/documents/apolication note/AN11786.Ddf XQFNB - SOT902-3 Package information ht‘tDs://www.nxD.com/docs/en/oackaqe—information/SOT902-3.odf TSSOPS - SOT505-1 Package information ht‘tDs://www.nxD.com/docs/en/oackaqe—information/SOT505-1.odf SOS - SOT505-1 Package information ht‘tps://www.nxp.com/docs/en/packaqe—information/SOT96-1.pdf
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17 References
1. NFC Forum - Type 2 Tag Specification 1.0
Technical Specification
2. ISO/IEC 14443 - Identification cards - Contactless integrated circuit cards - Proximity
cards
International Standard
3. I2C-bus specification and user manual
NXP standard UM10204
http://www.nxp.com/documents/user_manual/UM10204.pdf
4. NFC Forum - Activity 2.0
Technical Specification
5. AN11276 NTAG Antenna Design Guide
NXP Application Note
http://www.nxp.com/documents/application_note/AN11276.pdf
6. AN11350 NTAG21x Originality Signature Validation
NXP Application Note
http://www.nxp.com/restricted_documents/53420/AN11350.pdf
7. AN11578 NTAG I2C Energy Harvesting
NXP Application Note
http://www.nxp.com/documents/application_note/AN11578.pdf
8. AN11579 How to use the NTAG I2C (plus) for bidirectional communication
NXP Application Note
http://www.nxp.com/documents/application_note/AN11579.pdf
9. AN11786 NTAG I2C plus Memory Configuration Options
NXP Application Note
http://www.nxp.com/documents/application_note/AN11786.pdf
10.XQFN8 - SOT902-3
Package information
https://www.nxp.com/docs/en/package-information/SOT902-3.pdf
11.TSSOP8 - SOT505-1
Package information
https://www.nxp.com/docs/en/package-information/SOT505-1.pdf
12.SO8 - SOT505-1
Package information
https://www.nxp.com/docs/en/package-information/SOT96-1.pdf
13.Certicom Research
SEC 2: Recommended Elliptic Curve Domain Parameters V2.0
NT3H2111_2211 Table 44. Revision history Semion 13 Semion 12 Table 13 Table 42
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18 Revision history
Table 44. Revision history
Document ID Release date Data sheet status Change notice Supersedes
NT3H2111_2211 v. 3.5 20190507 Product data sheet - NT3H2111_2211 v. 3.4
Modifications: Information about I²C fail safe operation added
Link to detailed package specification on nxp.com added
Information added that tag does not need to be supplied via VCC for ED functionality added
Information added that reading NS_REG causes FD pin to be pulled low when configured for
NFC field presence detection
Information that VOUT maybe used as field detect pin, when energy harvesting is not used
Typical idle current and FD pin leakage current added in characteristics (see Section 13)
RFU bits and bytes handling requirements added
Static and dynamic lock bits concequence to mirrored SRAM added
Editorial updates
NT3H2111_2211 v. 3.4 20190108 Product data sheet - NT3H2111_2211 v. 3.3
Modifications: Package dimensions for XQFN8 in ordering information correcet according to package
outline
CDM ESD limit added in limiting values table (see Section 12)
Editorial updates
NT3H2111_2211 v. 3.3 20180808 Product data sheet - NT3H2111_2211 v. 3.2
Modifications: Info added, that ED pin is based on open-drain implementation
Warnings and recommendations related to I2C address added
Warning, that I²C read operations must be atomic added
Tj and thermal resistance added
Editorial updates
NT3H2111_2211 v. 3.2 20171130 Product data sheet - NT3H2111_2211 v. 3.1
Modifications: Error in editorial update of V3.1 in Table 13, TRANSFER_DIR corrected
NT3H2111_2211 v. 3.1 20171009 Product data sheet - v. 3.0
Modifications: Added info, that NTAG I2C plus now is NFC Forum certified
Endurance updated in Table 42
Editorial updates
NT3H2111_2211 v. 3.0 20160203 Product data sheet - -
NT3H2111_2211 incs nus dacumem w hmzllwwmxgmm
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19 Legal information
19.1 Data sheet status
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product
development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. NXP Semiconductors
takes no responsibility for the content in this document if provided by an
information source outside of NXP Semiconductors. In no event shall NXP
Semiconductors be liable for any indirect, incidental, punitive, special or
consequential damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the removal or replacement
of any products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any other
legal theory. Notwithstanding any damages that customer might incur for
any reason whatsoever, NXP Semiconductors’ aggregate and cumulative
liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable
for the specified use without further testing or modification. Customers
are responsible for the design and operation of their applications and
products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications
and products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with
their applications and products. NXP Semiconductors does not accept any
liability related to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using NXP Semiconductors products in order to avoid a
default of the applications and the products or of the application or use by
customer’s third party customer(s). NXP does not accept any liability in this
respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
NT3H2111_2211
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
NT3H2111/NT3H2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 3.5 — 7 May 2019
COMPANY PUBLIC 359935 79 / 82
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use
of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Licenses
Purchase of NXP ICs with NFC technology
Purchase of an NXP Semiconductors IC that complies with one of the
Near Field Communication (NFC) standards ISO/IEC 18092 and ISO/
IEC 21481 does not convey an implied license under any patent right
infringed by implementation of any of those standards. Purchase of NXP
Semiconductors IC does not include a license to any NXP patent (or other
IP right) covering combinations of those products with other products,
whether hardware or software.
19.5 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
I2C-bus — logo is a trademark of NXP B.V.
NTAG — is a trademark of NXP B.V.
NT3H2111_2211
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
NT3H2111/NT3H2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 3.5 — 7 May 2019
COMPANY PUBLIC 359935 80 / 82
Tables
Tab. 1. Ordering information ..........................................5
Tab. 2. Marking codes ...................................................6
Tab. 3. Pin description for XQFN8, TSSOP8 and
SO8 ................................................................... 9
Tab. 4. NTAG I2C plus 1k memory organization
from the NFC perspective ............................... 14
Tab. 5. NTAG I2C plus 2k memory organization
from the NFC perspective ............................... 16
Tab. 6. NTAG I2C plus 1k memory organization
from the I2C perspective .................................19
Tab. 7. NTAG I2C plus 2k memory organization
from the I2C perspective .................................21
Tab. 8. Minimum memory content to be in initialized
state for NTAG I2C plus ..................................27
Tab. 9. Password and Access Configuration
Register ........................................................... 28
Tab. 10. Password and Access Configuration bytes ..... 28
Tab. 11. Configuration register NTAG I2C plus ............. 30
Tab. 12. Session registers NTAG I2C plus ................... 30
Tab. 13. Configuration bytes ......................................... 31
Tab. 14. Session register bytes .....................................33
Tab. 15. Default NTAG I2C address from I2C ...............43
Tab. 16. Command overview .........................................47
Tab. 17. ACK and NAK values ......................................48
Tab. 18. ATQA response of the NTAG I2C plus ............49
Tab. 19. SAK response of the NTAG I2C plus .............. 49
Tab. 20. GET_VERSION command .............................. 49
Tab. 21. GET_VERSION timing .................................... 50
Tab. 22. GET_VERSION response for NTAG I2C
plus .................................................................. 50
Tab. 23. READ_SIG command ..................................... 51
Tab. 24. READ_SIG timing ............................................51
Tab. 25. PWD_AUTH command ................................... 52
Tab. 26. PWD_AUTH timing ..........................................52
Tab. 27. READ command ............................................. 53
Tab. 28. READ timing ....................................................53
Tab. 29. FAST_READ command .................................. 54
Tab. 30. FAST_READ timing .........................................54
Tab. 31. WRITE command ............................................55
Tab. 32. WRITE timing .................................................. 55
Tab. 33. FAST_WRITE command ................................. 56
Tab. 34. FAST_WRITE timing ....................................... 57
Tab. 35. SECTOR_SELECT command .........................57
Tab. 36. SECTOR_SELECT timing ............................... 58
Tab. 37. Illustration of the SRAM memory addressing
via the NFC interface (with SRAM_
MIRROR_ON_OFF set to 1b and SRAM_
MIRROR_BLOCK set to 01h) for the NTAG
I2C plus 1k ......................................................60
Tab. 38. Illustration of the SRAM memory addressing
via the NFC interface (with SRAM_
MIRROR_ON_OFF set to 1b and SRAM_
MIRROR_BLOCK set to 01h) for the NTAG
I2C plus 2k ......................................................61
Tab. 39. Illustration of the SRAM memory addressing
via the NFC interface in pass-through mode
(PTHRU_ON_OFF set to 1b) for the NTAG
I2C 1k ..............................................................63
Tab. 40. Illustration of the SRAM memory addressing
via the NFC interface in pass-through mode
(PTHRU_ON_OFF set to 1b) for the NTAG
I2C 2k ..............................................................64
Tab. 41. Limiting values ................................................ 68
Tab. 42. Characteristics .................................................69
Tab. 43. Abbreviations ...................................................75
Tab. 44. Revision history ...............................................77
NT3H2111_2211
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
NT3H2111/NT3H2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 3.5 — 7 May 2019
COMPANY PUBLIC 359935 81 / 82
Figures
Fig. 1. Contactless and contact system ....................... 1
Fig. 2. Block diagram ................................................... 7
Fig. 3. Pin configuration for XQFN8 ............................. 8
Fig. 4. Pin configuration for TSSOP8 ........................... 8
Fig. 5. Pin configuration for SO8 ..................................8
Fig. 6. NFC state machine of NTAG I2C plus ............ 11
Fig. 7. Serial number (UID) ........................................ 23
Fig. 8. Static lock bytes 0 and 1 .................................23
Fig. 9. NTAG I2C plus 1k Dynamic lock bytes 0, 1
and 2 ............................................................... 25
Fig. 10. NTAG I2C plus 2k Dynamic lock bytes 0, 1
and 2 ............................................................... 25
Fig. 11. Possible configuration of CC bytes of NTAG
I2C 1k version .................................................26
Fig. 12. FD pin example circuit .................................... 35
Fig. 13. Illustration of the field detection feature when
configured for simple field detection ................35
Fig. 14. Illustration of the field detection feature
when configured for first valid start of
communication detection .................................36
Fig. 15. Illustration of the field detection feature when
configured for selection of the tag detection .... 37
Fig. 16. Energy harvesting example circuit .................. 38
Fig. 17. I2C bus protocol ..............................................41
Fig. 18. I2C READ and WRITE operation .................... 44
Fig. 19. WRITE and READ register operation ..............46
Fig. 20. Frame Delay Time (from NFC device to NFC
tag), TACK and TNAK .....................................48
Fig. 21. GET_VERSION command .............................. 49
Fig. 22. READ_SIG command ..................................... 51
Fig. 23. PWD_AUTH command ................................... 52
Fig. 24. READ command ............................................. 53
Fig. 25. FAST_READ command .................................. 54
Fig. 26. WRITE command ............................................ 55
Fig. 27. FAST_WRITE command .................................56
Fig. 28. SECTOR_SELECT command .........................57
Fig. 29. Illustration of the Field detection feature in
combination with the pass-through mode for
data transfer from NFC to I2C .........................66
Fig. 30. Illustration of the Field detection signal
feature in combination with pass-through
mode for data transfer from I2C to NFC .......... 67
Fig. 31. Package outline SOT902-3 (XQFN8) .............. 71
Fig. 32. Package outline SOT505-1 (TSSOP8) ............72
Fig. 33. Package outline SOT96-1 (SO8) .....................73
NT3H2111_2211
NXP Semiconductors NT3H2111_2211
NTAG I2C plus: NFC Forum T2T with I2C interface, password protection and energy harvesting
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2019. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 May 2019
Document identifier: NT3H2111/NT3H2211
Document number: 359935
Contents
1 General description ............................................ 1
2 Features and benefits .........................................2
2.1 Key features ...................................................... 2
2.2 NFC interface .................................................... 2
2.3 Memory .............................................................. 3
2.4 I2C interface ...................................................... 3
2.5 Security .............................................................. 3
2.6 Key benefits .......................................................3
3 Applications .........................................................4
4 Ordering information .......................................... 5
5 Marking .................................................................6
6 Block diagram ..................................................... 7
7 Pinning information ............................................ 8
7.1 Pinning ............................................................... 8
7.1.1 XQFN8 ............................................................... 8
7.1.2 TSSOP8 .............................................................8
7.1.3 SO8 ....................................................................8
7.2 Pin description ................................................... 9
8 Functional description ......................................10
8.1 Block description ............................................. 10
8.2 NFC interface .................................................. 10
8.2.1 Data integrity ................................................... 10
8.2.2 NFC state machine ..........................................11
8.2.2.1 IDLE state ........................................................11
8.2.2.2 READY 1 state ................................................ 11
8.2.2.3 READY 2 state ................................................ 12
8.2.2.4 ACTIVE state ...................................................12
8.2.2.5 AUTHENTICATED state ..................................12
8.2.2.6 HALT state .......................................................12
8.3 Memory organization ....................................... 13
8.3.1 Memory map from NFC perspective ................13
8.3.2 Memory map from I2C interface ...................... 18
8.3.3 EEPROM ......................................................... 22
8.3.4 SRAM ...............................................................22
8.3.5 Serial number (UID) ........................................ 23
8.3.6 Static Lock Bytes .............................................23
8.3.7 Dynamic Lock Bytes ........................................24
8.3.8 Capability Container (CC) ................................26
8.3.9 User Memory pages ........................................ 26
8.3.10 Memory content at delivery ............................. 26
8.3.11 Password and Access Configuration ............... 27
8.3.12 NTAG I2C configuration and session
registers ........................................................... 29
8.4 Configurable Field Detection Pin ..................... 34
8.5 Watchdog timer ............................................... 37
8.6 Energy harvesting ............................................38
8.7 Password authentication ..................................39
8.7.1 Programming of PWD and PACK .................... 39
8.7.2 Limiting negative verification attempts ............. 39
8.7.3 Protection of configuration segments ...............40
8.8 Originality signature ......................................... 40
9 I2C commands .................................................. 41
9.1 Start condition ..................................................41
9.2 Stop condition ..................................................41
9.3 I2C soft reset and NFC silence feature ............42
9.4 Acknowledge bit (ACK) ....................................42
9.5 Data input ........................................................ 42
9.6 Addressing ....................................................... 42
9.7 READ and WRITE Operation .......................... 43
9.8 WRITE and READ register operation .............. 46
10 NFC Command .................................................. 47
10.1 NTAG I2C plus command overview .................47
10.2 Timing .............................................................. 47
10.3 NTAG ACK and NAK ...................................... 48
10.4 ATQA and SAK responses .............................. 48
10.5 GET_VERSION ............................................... 49
10.6 READ_SIG .......................................................50
10.7 PWD_AUTH .....................................................51
10.8 READ ............................................................... 52
10.9 FAST_READ ....................................................53
10.10 WRITE ............................................................. 55
10.11 FAST_WRITE .................................................. 56
10.12 SECTOR SELECT ...........................................57
11 Communication and arbitration between
NFC and I2C interface ...................................... 59
11.1 Pass-through mode not activated .................... 59
11.1.1 I2C interface access ........................................59
11.1.2 NFC interface access ...................................... 59
11.2 SRAM buffer mapping with Memory Mirror
enabled ............................................................ 60
11.3 Pass-through mode ......................................... 62
11.3.1 SRAM buffer mapping ..................................... 63
11.3.2 NFC to I2C data transfer ................................. 65
11.3.3 I2C to NFC data transfer ................................. 66
12 Limiting values ..................................................68
13 Characteristics .................................................. 69
13.1 Electrical characteristics .................................. 69
14 Package outline .................................................71
15 Handling information ........................................ 74
16 Abbreviations .................................................... 75
17 References ......................................................... 76
18 Revision history ................................................ 77
19 Legal information ..............................................78