MBRT600150 thru MBRT600200R Datasheet by GeneSiC Semiconductor

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VRRM = 150 V - 200 V
IF(AV) = 600 A
Features
• High Surge Capability Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Parameter Symbol MBRT600150(R) Unit
Repetitive peak reverse voltage
VRRM 150 V
RMS reverse voltage
VRMS 106 V
DC blocking voltage
VDC 150 V
Operating temperature
Tj-55 to 150 °C
Storage temperature
Tstg -55 to 150 °C
Parameter Symbol MBRT600150(R) Unit
Average forward current (per
pkg)
IF(AV) 600 A
Maximum instantaneous forward
voltage (per leg)
0.88
1
10
50
Thermal characteristics
Thermal resistance, junction-
case (per leg)
RΘJC 0.28 °C/W
A
Tj = 100 °C
10
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Peak forward surge current
(per leg)
tp = 8.3 ms, half sine
Silicon Power
Schottky Diode
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
mA
V
MBRT600150 thru MBRT600200R
Tj = 25 °C
IFM = 300 A, Tj = 25 °C
Conditions
200
141
MBRT600200(R)
-55 to 150
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
• Types from 150 V to 200 V VRRM
TC = 125 °C
MBRT600200(R)
0.28
Tj = 150 °C
0.92
50
600
4000
4000
-55 to 150
Conditions
200
1
1
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt600150.pdf
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MBRT600150 thru MBRT600200R
2
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt600150.pdf
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBRT600150 thru MBRT600200R
3
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt600150.pdf

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