ITS4200S-ME-N Datasheet by Infineon Technologies

LU fineon
Standard Power
Data Sheet
Rev 1.0, 2012-09-01
ITS4200S-ME-N
Smart High-Side NMOS-Power Switch
(ifileon RoHS /
SOT-223-4
Data Sheet 2 Rev 1.0, 2012-09-01
Smart High-Side NMOS-Power Switch
ITS4200S-ME-N
Type Package Marking
ITS4200S-ME-N SOT-223-4 I200SN
1Overview
Features
CMOS compatible input
Switching all types of resistive, inductive and capacitive loads
Fast demagnetization of inductive loads
Very low standby current
Optimized Electromagnetic Compatibility
Overload protection
Current limitation
Short circuit protection
Thermal shutdown with restart
Overvoltage protection (including load dump)
Reverse battery protection with external resistor
Loss of GND and loss of Vbb protection
Electrostatic Discharge Protection (ESD)
Green Product (RoHS compliant)
ITS4200S-ME-N is not qualified and manufactured according to the requirements of Infineon Technologies with
regards to automotive and/or transportation applications.
Description
The ITS4200S-ME-N is a protected single channel Smart High-Side NMOS-Power Switch in a SOT-223-4
package with charge pump and CMOS compatible input. The device is monolithically integrated in Smart
technology.
Product Summary
Overvoltage protection VSAZ min= 41V
Operating voltage range: 5V VS 34V
On-state resistance RDSON typ = 160m
Nominal load current ILNOM = 0.7A
Operating Temperature range: Tj = -40°C to 125°C
Standby Current: ISSTB= 25µA
Application
All types of resistive, inductive and capacitive loads
Power switch for 12V and 24V DC applications with CMOS compatible control interface
Driver for electromagnetic relays
Power managment for high-side-switching with low current consumption in OFF-mode
@fineon , $42:
ITS4200S-ME-N
Block Diagram and Terms
Data Sheet 3 Rev 1.0, 2012-09-01
2 Block Diagram and Terms
Figure 1 Block diagram
Figure 2 Terms - parameter definition
1
ITS4200S-ME-N
Gate
Control
Circuit
Temperature
Sensor
IN
OUT
VS
4
Bias
Supervision
Overvoltage
Protection
ESD
Protection
Logic
Current
Limiter
3
2
GND
V
ST
V
OUT
V
S
I
S
I
L
R
L
V
FDS
GND
Voltage- and Current-Definitions: Switching Times and Slew Rate Definitions:
OFFOFF ON
V
DS
V
OUT
90%
0
+V
S
10%
t
OFF
t
I
L
t
0
t
ON
SR
ON
30%
SR
OFF
70%
40%
t
1
ITS4200S-ME-N
Gate
Control
Circuit
Temperature
Sensor
IN
OUT
VS
4
Bias
Supervision
Overvoltage
Protection
ESD
Protection
Logic
Current
Limiter
3
2
GND
V
IN
I
IN
I
OUT
V
IN
L
H
@neon, |:]
Data Sheet 4 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Pin Configuration
3 Pin Configuration
3.1 Pin Assignment
Figure 3 Pin configuration top view, SOT-223-4
3.2 Pin Definitions and Functions
Pin Symbol Function
1 OUT Output to the load
2 GND Logic ground
3 IN Input, controles the power switch; the powerswitch is ON when high
4 VS Supply voltage (design the wiring for the maximum short circuit current and also
for low thermal resistance)
123
4
@neon,
ITS4200S-ME-N
General Product Characteristics
Data Sheet 5 Rev 1.0, 2012-09-01
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Note: Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” the normal operating range. Protection functions
are neither designed for continuous nor repetitive operation.
Table 1 Absolute maximum ratings 2) at Tj= 25°C unless otherwise specified. Currents flowing into the
device unless otherwise specified in chapter “Block Diagram and Terms”
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Supply voltage VS
Voltage VS– – 40 V 4.1.1
Output stage OUT
Output Current; (Short circuit
current see electrical
characteristics)
IOUT self
limited
A 4.1.2
Input IN
Voltage VIN -5 – VSV 4.1.3
Current IIN -5 – 5 mA 4.1.4
Temperatures
Junction Temperature Tj-40 125 °C 4.1.5
Storage Temperature Tstg -55 125 °C 4.1.6
Power dissipation
Ta = 25 °C1)
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70mm thick) copper area for Vbb connection. PCB
is vertical without blown air
P tot – – 1.4 W 4.1.7
Inductive load switch-off energy dissipation
Tj = 125 °C; VS=13.5V; IL= 0.5A2)
2) Not subject to production test, specified by design
EAS 500 mJ single pulse 4.1.8
ESD Susceptibility
ESD susceptibility (input pin) VESD -1–1kVHBM
3)
3) ESD susceptibility HBM according to EIA/JESD 22-A 114.
4.1.9
ESD susceptibility (all other pins) VESD -2–2kVHBM
3) 4.1.10
@neon,
Data Sheet 6 Rev 1.0, 2012-09-01
ITS4200S-ME-N
General Product Characteristics
4.2 Functional Range
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3 Thermal Resistance
This thermal data was generated in accordance to JEDEC JESD51 standards.
More information on www.jedec.org
Table 2 Functional Range
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Nominal Operating Voltage VS5–34VVS increasing 4.2.1
Continuous Input Voltage VIN -3 – VSV 4.2.2
Table 3 Thermal Resistance1)
1) Not subject to production test, specified by design
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Thermal Resistance -
Junction to pin5
Rthj-pin5 – 35.0 – K/W 4.3.1
Thermal Resistance -
Junction to Ambient - 1s0p,
minimal footprint
RthJA_1s0p –120.0–K/W
2)
2) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, footprint; the Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
4.3.2
Thermal Resistance -
Junction to Ambient - 1s0p,
300mm2
RthJA_1s0p_30
0mm
–69.3–K/W
3)
3) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, Cu, 300mm2; the Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
4.3.3
Thermal Resistance -
Junction to Ambient - 1s0p,
600mm2
RthJA_1s0p_60
0mm
–61.6–K/W
4)
4) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, 600mm2; the Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
4.3.4
Thermal Resistance -
Junction to Ambient - 2s2p
RthJA_2s2p –55.5–K/W
5)
5) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; the Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
4.3.5
Thermal Resistance -
Junction to Ambient with
thermal vias - 2s2p
RthJA_2s2p –48.3–K/W
6) 4.3.6
o/_ Inflneon
ITS4200S-ME-N
General Product Characteristics
Data Sheet 7 Rev 1.0, 2012-09-01
6) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board with two thermal vias;
the Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2
x 35µm Cu. The diameter of the two vias are equal 0.3mm and have a plating of 25um with a copper heatsink area of 3mm
x 2mm). JEDEC51-7: The two plated-through hole vias should have a solder land of no less than 1.25 mm diameter with
a drill hole of no less than 0.85 mm diameter.
@neon,
Data Sheet 8 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Electrical Characteristics
5 Electrical Characteristics
Table 4 VS = 13.5V; Tj = 25°C; all voltages with respect to ground, currents flowing into the device un-
less otherwise specified in chapter “Block Diagram and Terms”. Typical values at Vs = 13.5V,
Tj=25°C
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Powerstage
NMOS ON Resistance RDSON 160 200 mIOUT= 0.5A;
Tj = 25°C;
VIN= 5V
5.0.1
NMOS ON Resistance RDSON ––400mIOUT= 0.5A;
Tj = 125°C;
VIN= 5V
5.0.2
Nominal Load Current;
device on PCB 1)
ILNOM 0.7 – A Tpin5 = 85°C 5.0.3
Timings of Power Stages2)
Turn ON Time(to 90% of Vout);
L to H transition of VIN
tON –60100µsVS=13.5V; RL=245.0.4
Turn OFF Time (to 10% of Vout);
H to L transition of VIN
tOFF –60150µsVS=13.5V; RL=245.0.5
ON-Slew Rate (10 to 30% of Vout);
L to H transition of VIN
SRON –24V /µsVS=13.5V; RL=245.0.6
OFF-Slew Rate; dVOUT / dtON
(70 to 40% of Vout);
H to L transition of VIN
SROFF –24V /µsVS=13.5V; RL=245.0.7
Under voltage lockout (charge pump start-stop-restart)
Supply undervoltage;
charge pump stop voltage
VSUV 3.5 – 5.0 V VSdecreasing
Tj = -40°C to 125°C
5.0.8
Supply startup voltage VSSU ––6.5VVSincreasing
Tj = -40°C to 25°C
5.0.9
Supply startup voltage VSSU ––7.0VVSincreasing
Tj = 125°C
5.0.10
Supply startup voltage;
Charge pump restart voltage
VSSCHP –5.67.0VVSincreasing 5.0.11
Undervoltage hysteresis;
VUVHYS=VSSU-VSUV
VUVHYS – 0.3 – V 5.0.12
Over voltage lockout
Overvoltage shutdown thresthold VSOV 34 – 42 V VSdecreasing
Tj = -40°C to 125°C
5.0.13
Overvoltage restart thresthold VSOVRS 33 V VSdecreasing
Tj = -40°C to 125°C
5.0.14
Overvoltage
hysteresis;VOVHYS=VSOCSD-VSOVRS
VOVHYS – 0.7 – V 5.0.15
Current consumption
@neon,
Data Sheet 9 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Electrical Characteristics
Operating current IGND –1.01.6mAVIN= 5V 5.0.16
Standby current ISSTB –1025µAVIN= 0V; VOUT= 0V;
Tj = -40°C to 125°C
5.0.17
Output leakage current IOUTLK –25µAVIN= 0V; VOUT= 0V;
Tj = -40°C to 25°C
5.0.18
Output leakage current IOUTLK ––7µAVIN= 0V; VOUT= 0V;
Tj = 125°C
5.0.19
Protection functions 3)
Initial peak short circuit current limit ILSCP 0.7 1.5 2.0 A Tj = 25°C;VS=20V;
VIN =5.0V
5.0.20
Initial peak short circuit current limit ILSCP 0.7 2.4 A Tj = -40°C to 125°C;
VS=20V;VIN =5.0V
5.0.21
Output clamp at VOUT = VS - VDSCL
(inductive load switch off)
VDSCL 41 47 V IS = 4mA 5.0.22
Overvoltage protection VSAZ 41 V IS = 4mA;
Tj = -40°C to 125°C
5.0.23
Thermal overload
trip temperature
TjTrip 150 °C – 5.0.24
Thermal hysteresis THYS – 10 – K 5.0.25
Reverse Battery4)
Continuous reverse battery voltage VSREV - 30 V 5.0.26
Input interface; pin IN
Input turn-ON threshold voltage VINON 3.5 V Tj = -40°C to 125°C 5.0.27
Input turn-OFF threshold voltage VINOFF 1.5 V Tj = -40°C to 125°C 5.0.28
Input threshold hysteresis VINHYS –0.5–V– 5.0.29
Off state input current IINOFF 10 – 60 µA VIN =1.2V;
Tj = -40°C to 125°C
5.0.30
On state input current IINON 10 100 µA VIN =3V to VS;
Tj = -40°C to 125°C
5.0.31
Input resistance RIN 1.5 2.8 3.5 k– 5.0.32
1) Device on 50mm x 50mm x 1,5mm epoxy FR4 PCB with 6cm² (one layer copper 70um thick) copper area for supply voltage
connection. PCB in vertical position without blown air.
2) Timing values only with high slewrate input signal; otherwise slower.
3) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous
repetitive operation.
4) Requires a 150W resistor in GND connection. The reverse load current trough the intrinsic drain-source diode of the
power-MOS has to be limited by the connected load. Power dissipation is higher compared to normal operation due to the
votage drop across the drain-source diode. The temperature protection is not functional during reverse current operation!
Input current has to be limited (see max ratings).
Table 4 VS = 13.5V; Tj = 25°C; all voltages with respect to ground, currents flowing into the device un-
less otherwise specified in chapter “Block Diagram and Terms”. Typical values at Vs = 13.5V,
Tj=25°C
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
infineon
Data Sheet 10 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Typical Performance Graphs
6 Typical Performance Graphs
Maximal allowable Power Dissipation Ptot versus
Ambient and Soldering Point TemperatureTa; TSP
Initial Peak Short Circuit Current Limit ILSCP versus
Drain-Source Voltage VDS
On-Resistance RDSONversus
Junction Temperature Tj
On-Resistance RDSONversus
Supply Voltage VS
25 125
0
2
4
6
8
10
12
14
16
18
T
j
[°C]
Ptot [W]
Tsp
TA
0 2 4 6 8 10 12 14
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
ON
[V]
I
LSC
[A]
T
j
=−40°C
T
j
=25°C
T
j
=125°C
−40 −25 0 25 50 75 100 125
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
T
j
[°C]
R
DSON
[Ω]
V
s
=13.5V;I
L
=0.5A
10 15 20
0
50
100
150
200
250
300
V
s
[V]
R
DSON
[mΩ]
T
j
[°C]=25°C;I
L
=0.5A
infineon
Data Sheet 11 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Typical Performance Graphs
Typical Performance Characteristics
Standby Current ISSTB versus
Junction Temperature Tj
Operating Current IGND versus
Junction Temperature Tj
Initial Peak Short Circuit Current Limt ILSCP versus
Junction Temperature Tj
Typical Overload Current waveform; no heatsink;
parameter: Start Temperature Tj-start
−40 −25 0 25 50 75 100 125
0
1
2
3
4
5
6
7
8
T
j
[°C]
I
SSTB
[μA]
V
s
=13.5V;I
L
=150mA
−40 −25 0 25 50 75 100 125
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
T
j
[°C]
I
GND
[mA]
V
s
=13.5V;V
IN
=5V
−40 −25 0 25 50 75 100 125
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T
j
[°C]
I
LSCP
[A]
V
s
=13.5V
0 100 200 300 400
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
t[ms]
I
L(lim)
[A]
T
j
=−40°C
T
j
=25°C
T
j
=125°C
or. Inflneon
Data Sheet 12 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Typical Performance Graphs
Typical Performance Characteristics
Input Threshold voltage VINH,L versus Junction
Temperature Tj
Undervoltage restart of the charge pump
−40 −25 0 25 50 75 100 125
0
0.5
1
1.5
2
2.5
3
T
j
[°C]
V
IN
[mA]
V
s
=13.5V
@fineon ,
Data Sheet 13 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Application Information
7 Application Information
7.1 Application Diagram
The following information is given as a hint for the implementation of the device only and shall not be regarded as
a description or warranty for a certain functionality, condition or quality of the device.
Figure 4 Application Diagram
The ITS4200S-ME-N can be connected directly to a supply network. It is recommended to place a ceramic
capacitor (e.g. CS = 220nF) between supply and GND to avoid line disturbances. Wire harness inductors/resistors
are sketched in the application circuit above.
The complex load (resistive, capacitive or inductive) must be connected to the output pin OUT.
A built-in current limit protects the device against destruction.
The ITS4200S-ME-N can be switched on and off with standard logic ground related logic signal at pin IN.
In standby mode (IN=L) the ITS4200S-ME-N is deactivated with very low current consumption.
The output voltage slope is controlled during on and off transistion to minimize emissions. Only a small ceramic
capacitor COUT=1nF is recommended to attenuate RF noise.
In the following chapters the main features, some typical waverforms and the protection behaviour
of the ITS4200S-ME-N is shown. For further details please refer to application notes on the Infineon homepage.
Wire
Harness
Complex
LOAD
Electronic Control Unit
Wire
Harness
GND1
1
ITS4200S-ME-N
Gate
Control
Circuit
Temperature
Sensor
IN
OUT
VS
4
Bias
Supervision
Overvoltage
Protection
ESD
Protection
Logic
Current
Limiter
3
2
GND
C
S
220nF
GND2
GND3
C
OUT
1nF
@fineon ,
Data Sheet 14 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Application Information
7.2 Special Feature Description
Figure 5 Special feature description
Energy stored in the load inductance is given by :
EL= IL²*L/2
While demagnetizing the load inductance the energy
dissipated by the Power-DMOS is:
EAS = ES+ EL–E
R
With an approximate solution for RL =0Ω:
EAS = ½ * L * IL² * {(1- VS/ (VS-V
DSCL)
When an inductive load is switched off a current path must be
established until the current is sloped down to zero (all energy
removed from the inductive load ). For that purpose the series
combination ZDSCL is connected between Gate and Drain of the
power DMOS acting as an active clamp .
When the device is switched off , the voltage at OUT turns
negative until V DSCL is reached.
The voltage on the inductive load is the difference between
VDSCL and VS.
If reverse voltage is applied to the device :
1.) Current via load resistance RL :
IRev1 = (VRev –V
FDS) / RL
2.) Current via Input pin IN and dignostic pin ST :
IRev2 = IST+IIN ~ (VRev–VCC)/RIN +(VRev–VCC)/RST1,2
Current IST must be limited with the extrernal series
resistor RSTS. Both currents will sum up to:
IRev = IRev1+ IRev2
If over-voltage is applied to the VS-Pin:
Voltage is limited to VZDSAZ; current can be calculated:
IZDSAZ = (VS–V
ZDSAZ) / RGND
A typical value for RGND is 150Ω.
In case of ESD pulse on the input pin there is in both
polarities a peak current IINpeak ~ VESD / RIN
ZL
IRev1
IRev2
VRev
LL
I
L
VBatt
VDSCL VOUT
LL
ERRL
EL
E
Batt
E
Load
ZL
VBatt
VDS VOUT
VDSCL
IRev
VFDS
Drain-Source power stage clamper V
DSCL
: Energy calculation:
Supply over voltage: Supply reverse voltage:
R
GND
R
GND
VS
1
ITS4200S-ME-N
2
R
IN
4
GND
3
OUT
IN
ZD
IN
I
IN
ZD
SAZ
ZD
DSCL
R
OUTPD
VS
1
ITS4200S-ME-N
2
R
IN
4
GND
3
OUT
IN
ZD
IN
I
IN
ZD
SAZ
ZD
DSCL
R
OUTPD
VS
1
ITS4200S-ME-N
2
R
IN
4
GND
3
OUT
IN
ZD
IN
I
IN
ZD
SAZ
ZD
DSCL
R
OUTPD
R
GND
VS
1
ITS4200S-ME-N
2
R
IN
4
GND
3
OUT
IN
ZD
IN
I
IN
ZD
SAZ
ZD
DSCL
R
OUTPD
@neon,
Data Sheet 15 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Application Information
7.3 Typical Application Waveforms
Figure 6 Typical application waveforms of the ITS4200S-ME-N
General Input Output waveforms:
VS
t
0
IL
t
0
OFFOFF ON
V
DS
VOUT
90%
0
+VS
10%
t
OFF
t
IL
t
0
t
ON
SRON = dV/dt
30%
SROFF = dV/dt
70%
40%
t
Waveforms switching a resistive load:
OFFOFF ON ON
Waveforms switching a capacitive load: Waveforms switching an inducitive load :
VOUT
t
t
0
IL
t
0
~ VS
VOUT
t
t
0
IL
t
0
~ VS
t
VOUT
VDSCL
ILSC
OFF
OFF
ON ON OFF
OFF
ON ON
t
VIN
L
H
VIN
L
H
VIN
L
H
VIN
L
H
t
dON
@neon, H T A b AV w > A A A; t A y A y A III , E:—
Data Sheet 16 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Application Information
7.4 Protection Behavior
Figure 7 Protective behaviour of the ITS4200S-ME-N
Overtemperature concept: Overtemperature behavior:
OvertemperatureTogglingNormal
Waveforms turn on into a short circuit : Waveforms short circuit during on state :
tt
OFF
OFF
Overloaded OUT shorted to GND
OFF
Normal
operation
ON
TjTrip
THYS
VOUT
t
t
0
IL
0
ILSCR
ILSCP
t
m
t
SCOFF
Shut down by overtemperature and
restart by cooling (toggling )
Shut down by overtemperature and
restart by cooling (toggling )
VOUT
t
VIN
L
t
0
IL
0
ILSCR
t
OFF
OFF
ON ON
VOUT
t
t
0
TJ
t
T
jTrip
T
HYS
OFF
TJ
OFF
TjRestart
cooling
down
heating
up
Device
Status
H
VIN
L
H
VIN
L
H
I
peak
Controlled
by the
current limit
circuit
I
peak
Controlled
by the
current limit
circuit
0/. @Ineon o’j/ * High??? sorzzarFo vm
Data Sheet 17 Rev 1.0, 2012-09-01
ITS4200S-ME-N
Package outlines and footprint
8 Package outlines and footprint
Figure 8 SOT-223-4 (Plastic Dual Small Outline Package, RoHS-Compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020
SOT223-PO V04
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
6.5
±0.2
A
4.6
2.3
0.7
±0.1
0.25
M
A
1.6
±0.1
7
±0.3
B0.25
M
±0.2
3.5
B
0...10˚
@180"
ITS4200S-ME-N
Revision History
Data Sheet 18 Rev 1.0, 2012-09-01
9 Revision History
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Revision Date Changes
1.0 2012-09-01 Datasheet release
Edition 2012-09-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-
support automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.