IPx3xCN10N G Datasheet by Infineon Technologies

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IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
OptiMOS™2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25 °C 27 A
TC=100 °C 20
Pulsed drain current2) ID,pulse TC=25 °C 108
Avalanche energy, single pulse
EAS ID=27 A, RGS=25 W47 mJ
Gate source voltage3) VGS ±20 V
Power dissipation
Ptot TC=25 °C 58 W
Operating and storage temperature
Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Value
1)J-STD20 and JESD22
2) see figure 3
VDS
100
V
RDS(on),max (TO252)
33
mW
27
A
Product Summary
Type
IPB34CN10N G
IPD33CN10N G
IPI35CN10N G
IPP35CN10N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
PG-TO220-3
Marking
34CN10N
33CN10N
35CN10N
35CN10N
Rev. 1.091 page 1 2013-07-25
(ifianeon connection. PCB is verlxca‘ m still av.
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 2.6 K/W
RthJA minimal footprint - - 62
6 cm2 cooling area4) - - 40
minimal footprint - - 75
6 cm2 cooling area4) - - 50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=1 mA 100 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=29 µA 2 3 4
Zero gate voltage drain current
IDSS
VDS=80 V, VGS=0 V,
Tj=25 °C
-0.1 1µA
VDS=80 V, VGS=0 V,
Tj=125 °C
-10 100
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance
RDS(on)
VGS=10 V, ID=27 A,
(TO252)
-25 33
mW
VGS=10 V, ID=27 A,
(TO251)
-25 33
VGS=10 V, ID=27 A,
(TO263)
-25 34
VGS=10 V, ID=27 A,
(TO220, TO262)
-26 35
Gate resistance
RG- 1 - W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=27 A
15 30 - S
Values
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO251, TO252)
Rev. 1.091 page 2 2013-07-25
( Ififineon Dynamic characteristics Gale Charge Characteristics Reverse Diode
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -1180 1570 pF
Output capacitance
Coss -175 233
Reverse transfer capacitance
Crss -13 20
Turn-on delay time
td(on) -11 17 ns
Rise time
tr-21 31
Turn-off delay time
td(off) -17 25
Fall time
tf- 4 6
Gate Charge Characteristics5)
Gate to source charge
Qgs - 7 9 nC
Gate to drain charge
Qgd - 4 6
Switching charge
Qsw - 7 11
Gate charge total
Qg-18 24
Gate plateau voltage
Vplateau -5.6 - V
Output charge
Qoss VDD=50 V, VGS=0 V -18 24 nC
Reverse Diode
Diode continous forward current IS- - 27 A
Diode pulse current
IS,pulse - - 108
Diode forward voltage
VSD
VGS=0 V, IF=27 A,
Tj=25 °C
- 1 1.2 V
Reverse recovery time
trr -77 ns
Reverse recovery charge
Qrr -154 -nC
5) See figure 16 for gate charge parameter definition
VR=50 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=50 V,
f=1 MHz
VDD=50 V, VGS=10 V,
ID=27 A, RG,ext=1.6 W
VDD=50 V, ID=27 A,
VGS=0 to 10 V
Rev. 1.091 page 3 2013-07-25
(ifianeon
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
10-2
10-1
100
101
ZthJC [K/W]
tp [s]
0
20
40
60
0 50 100 150 200
Ptot [W]
TC [°C]
0
10
20
30
0 50 100 150 200
ID [A]
TC [°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
103
10-1
100
101
102
103
ID [A]
VDS [V]
Rev. 1.091 page 4 2013-07-25
(ifianeon
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
5.5 V
6 V
10 V
8 V
0
20
40
60
80
0 20
RDS(on) [mW]
ID [A]
25 °C
175 °C
0
10
20
30
40
50
0 2 4 6 8
ID [A]
VGS [V]
0
10
20
30
40
50
0 10 20 30 40 50
gfs [S]
ID [A]
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
8 V
10 V
0
50
100
150
0 1 2 3 4 5
ID [A]
VDS [V]
Rev. 1.091 page 5 2013-07-25
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IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=27 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
20
40
60
80
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
29 µA
290 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
100
101
102
103
104
0 20 40 60 80
C [pF]
VDS [V]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
100
101
102
103
0 0.5 1 1.5 2
IF [A]
VSD [V]
Rev. 1.091 page 6 2013-07-25
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=27 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20 V
50 V
80 V
0
2
4
6
8
10
12
0 5 10 15 20
VGS [V]
Qgate [nC]
90
95
100
105
110
115
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
150 °C
1
10
100
1 10 100 1000
IAS [A]
tAV [µs]
Rev. 1.091 page 7 2013-07-25
Inflneon I 3 DIM MILLIMETERS INCHES MIN MAX MIN MAX DOCUMENT no. A 4 30 4.57 0.159 0100 20000003310 A1 111 1.40 0.046 0055 02 2.15 2H 0.005 0107 5001.5 “ 0 0.05 0.00 0.026 0 031 01 0 05 1.00 0.037 0 055 25 02 095 1.15 0.007 0005 I23 0 55 1 15 0 025 0 ms 0 2 5 c 0.33 0.00 0.01:1 0 021 5mm 0 14.01 1505 0.500 0 020 01 0.51 0.05 0.035 0312 EUROPEAN 1712005011011 02 1210 131a 0400 0510 E 0.10 1000 0.002 0 400 fl.\ El 0.50 5.50 0.256 0 530 :1 O) 0 2 54 0,100 \ :1 5 00 0 200 N 3 3 Issue DATE 1-11 5 00 6.00 0.232 0 272 23.03.2007 L 1300 mm 0512 0551 L1 - 4.30 - 0 100 mm" aP 3.60 3.09 0.142 0150 “5 o 2.00 3.00 0.102 0110
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
PG-TO220-3: Outline
Rev. 1.091 page 8 2013-07-25
Infineon A E _. | | k | r: | . I Q 7' I [11 l I ‘_ I I . I _ b2 3 ‘l “ 33 I I I up LwLNq DIM MII|UF'F=€S INCHFS JkDLC “3262 VIIN MAX MIN MAX A 1,306 #512 1‘59 UI‘SC A‘ 2.150 2.715 0.065 (L‘OI b 0.950 0.564 0.023 0.034 b! 0.960 I .D93 0.031 0.0l1l 32 0.950 IADO . 0.05! 0.0% :3 new m In 0.026 0.044 m,“ : 0,110 OISCfl 10'! 0.024 =I mm moo 0,046 was EUROPEAN =ROJECTION D 5.509 9.150 0.135 0.377 DI 8.900 - 0.272 . E 0.100 mm 0.382 0.40! L‘ 5.500 8.500 0.756 0.339 a 2,549 mm u 5.0» 0.200 ssut. DA". N 3 3 aim-mas I Iamc 14.000 0.5? 0.55! n - 4.3m: - ones ”LE L2 . I .171 . was ”NU
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
PG-TO262-3-1 (I²PAK)
Rev. 1.091 page 9 2013-07-25
Inflneon I F1 FOOTPRINT 52 B i E E 01111 1111LL111ErER5 11101-155 MIN MAX MIN MAX A 4.300 4.572 0.150 0.100 A1 0 000 0254 0 000 0 010 0 0.550 0.050 0.025 0.033 REFERENCE 02 0.050 1.321 0.037 0.052 45050 1-0253 1: 0.330 0.550 0.013 0.025 :2 0.170 1.400 0.045 0.055 SCALE 0’ 13 0.500 0.450 0.335 0.372 01 7.100 . 0.200 . E 0.000 10.312 0.305 0.405 0 5, E1 5.500 0.255 ‘ ‘5 e 2.540 0.100 7 5m 91 5.000 0.200 N 2 2 EUROPEAN PROJECTION H 14.505 15.075 0.575 0.525 L 2.200 3.000 0.007 0.110 L1 - 1.000 - 0.003 K/‘ L2 1.000 1.770 0.030 0.070 ‘\1 F1 10.050 10.250 0.032 0.040 52 0.300 0.500 0.300 0.374 155uE DATE 53 4.500 4.700 0.177 0.105 12.024005 54 10.700 10.000 0.421 0.420 F5 3.030 3.030 0.143 0.151 “-5 F6 1.100 1.300 0.043 0.051 “32533
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
PG-TO-263 (D²-Pak)
Rev. 1.091 page 10 2013-07-25
infineon E A 13 W E 1 1 - 1 1 I A 1 i i a k 1 [1 K ‘3 n F 1 F 7 F 3 1 1 4 1n 1 1—17 1 DI“ MILLIMEIERS mcnss MIN MAX MIN MAX A 2.150 2 413 0.005 0.005 A1 0.000 0.150 0.000 0.000 b 0.635 0.000 0.025 0.035 n: 0 050 1 150 0.020 0 045 0505053405 0: 5.004 5.500 0.107 0.217 35050 70252 c 0.457 0.500 0,010 0023 1:2 0 400 0 000 0.010 0 030 SCALE 0 D 5009 0.223 0.235 0.245 01 5.020 5.042 0.100 0.230 2 0 E 0.400 5 731 0.252 0,205 ' E1 4.050 5207 0.101 0.205 D 2-D a 2.200 0.000 Mm .1 4.572 0.100 N 3 3 EUROPEAN nous-non H 9.400 10.430 0.370 0.413 1.3 0.000 1 143 0 035 0 045 L4 0504 0 050 0.023 0 037 /j La 0510 0 500 0.020 0 027 F1 10.500 10.700 0.413 0.421 52 0.300 5.500 0.240 0.250 Issue DATE F3 2100 2.300 0.003 0.091 21.032005 F4 5.700 5000 0.224 0.232 F5 5050 5000 0.222 0.231 FILE Fl 1 100 1.300 0.043 0.051 70252—‘
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
PG-TO252-3: Outline
Rev. 1.091 page 11 2013-07-25
(ifianeon www.infineon.com .
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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Rev. 1.091 page 12 2013-07-25