IPD042P03L3 G Datasheet by Infineon Technologies

(ifineon RoHS ‘f @ Halogen-Free PM Pm : ‘Jgoam 3
IPD042P03L3 G
OptiMOSTM P3 Power-Transistor
Features
• single P-Channel (Logic Level)
• Enhancement mode
• Qualified according JEDEC1) for target applications
• 175 °C operating temperature
• Pb-free; RoHS compliant
• applications: load switch, HS-switch
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25 °C A
TC=100 °C
Pulsed drain current
ID,pulse TC=25 °C2)
Avalanche energy, single pulse
EAS ID=-70 A, RGS=25 WmJ
Gate source voltage
VGS V
Power dissipation
Ptot TC=25 °C W
Operating and storage temperature
Tj, Tstg °C
ESD class
JESD22-A114 HBM
Soldering temperature °C
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
55/175/56
-55 ... 175
±20
150
260
Value
269
-280
-70
-70
class 2 ( 2 kV - < 4 kV)
RDS(on),max
PG-TO252-3
042P03L
IPD042P03L3 G
Package
Type
Lead free
Yes
non dry
PG-TO252-3
VDS
-30
V
4.2
mW
6.8
ID
-70
A
Product Summary
VGS = 10V
VGS = 4.5V
D
G
S
Rev. 2.2 page 1 2014-05-16
(infineon connection. PCB is verlxca‘ m still av.
IPD042P03L3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - case RthJC - - 1.0 K/W
Thermal resistance,
junction - ambient
RthJA 6 cm2 cooling area2) - - 50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=-250mA-30 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=-270 µA -2.0 -1.5 -1.0
Zero gate voltage drain current
IDSS
VDS=-30 V, VGS=0 V,
Tj=25 °C
- - -1 µA
VDS=-30 V, VGS=0 V,
Tj=175 °C
- - -300
Gate-source leakage current
IGSS VGS=-20 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance
RDS(on) VGS=-4.5 V, ID=-70 A -4.6 6.8 mW
VGS=-10 V, ID=-70 A -3.5 4.2
Gate resistance
RG-2.4 -W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=-70 A
65 130 - S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev. 2.2 page 2 2014-05-16
(ifineon Dynamic characteristics Gale Charge Characteristics Reverse Diode
IPD042P03L3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -9290 12400 pF
Output capacitance
Coss -3570 4750
Reverse transfer capacitance
Crss -150 220
Turn-on delay time
td(on) -21 33 ns
Rise time
tr-167 251
Turn-off delay time
td(off) -89 134
Fall time
tf-22 33
Gate Charge Characteristics3)
Gate to source charge
Qgs -31 41 nC
Gate charge at threshold
Qg(th) -15 20
Gate to drain charge
Qgd -14 21
Switching charge
Qsw -30 42
Gate charge total
Qg-131 175
Gate plateau voltage
Vplateau -3.3 - V
Output charge
Qoss VDD=-15 V, VGS=0 V -84 111 nC
Reverse Diode
Diode continous forward current IS- - 70 A
Diode pulse current
IS,pulse - - 280
Diode forward voltage
VSD
VGS=0 V, IF=-70 A,
Tj=25 °C
- - -1.1 V
Reverse recovery time
trr
VR=15 V, IF=|IS|,
diF/dt=100 A/µs
-54 68 ns
Reverse recovery charge
Qrr -61 76 nC
TC=25 °C
Values
VGS=0 V, VDS=-15 V,
f=1 MHz
VDD=-15 V, VGS=-
10 V, ID=-70 A,
RG,ext=6 W
VDD=-15 V, ID=-70 A,
VGS=0 to -10 V
Rev. 2.2 page 3 2014-05-16
(ifineon
IPD042P03L3 G
1 Power dissipation 2 Drain current
Ptot=f(TC); tp≤10 s ID=f(TC); |VGS|≥10 V; tp≤10 s
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C1); D=0 ZthJS=f(tp)
parameter: tpparameter: D=tp/T
1 µs
100 µs
1 ms
10 ms
10-1
100
101
102
10-2
10-1
100
101
102
0.01
0.1
1
10
100
1000
0.1 1 10 100
-ID [A]
-VDS [V]
limited by on-state
resistance
DC
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
10-2
10-1
100
101
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJS [K/W]
tp [s]
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
0 40 80 120 160
Ptot [W]
TC [°C]
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
0 40 80 120 160
-ID [A]
TC [°C]
Rev. 2.2 page 4 2014-05-16
3/,
IPD042P03L3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
-2.7 V
-3 V
-3.2 V
-3.5 V
-4.5 V
-10 V
0
5
10
15
20
25
30
0 10 20 30 40
RDS(on) [mW]
-ID [A]
25 °C
175 °C
0
10
20
30
40
50
60
70
0 1 2 3 4
-ID [A]
-VGS [V]
0
20
40
60
80
100
120
140
0 10 20 30 40 50 60 70
gfs [S]
-ID [A]
-2.3 V
-2.5 V
-2.7 V
-3 V
-3.2 V
-3.5 V
-4.5 V
-10 V
0
10
20
30
40
50
60
70
0 1 2 3
-ID [A]
-VDS [V]
Rev. 2.2 page 5 2014-05-16
\\ //
IPD042P03L3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-30 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-270 mA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
2
3
4
5
6
7
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
Ciss
Coss
Crss
102
103
104
0 10 20 30
C [pF]
-VDS [V]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
-VGS(th) [V]
Tj [°C]
25 °C, typ
175 °C, typ
25 °C, 98%
175 °C, 98%
0.1
1
10
100
0 0.5 1
IF [A]
-VSD [V]
Rev. 2.2 page 6 2014-05-16
(infineon \ J
IPD042P03L3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=-70 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 mA
-6 V
-15 V
-24 V
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140
-VGS [V]
-Qgate [nC]
28
29
30
31
32
-60 -20 20 60 100 140 180
-VBR(DSS) [V]
Tj [°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
150 °C
100
101
102
103
100
101
102
-IAV [A]
tAV [µs]
Rev. 2.2 page 7 2014-05-16
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IPD042P03L3 G
Package Outline
PG-TO252-3
Dimensions in mm
Rev. 2.2 page 8 2014-05-16
(ifineon
IPD042P03L3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
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Rev. 2.2 page 9 2014-05-16