IRF100(B,S)201 Datasheet by Infineon Technologies

International ISBR Rectifier TO-ZZDAB |RF|DDEZO| G D S - www.irf.com Submit Datasneet Feedback
HEXFET® Power MOSFET
D
S
G
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
VDSS 100V
RDS(on) typ. 3.5m
max 4.2m
ID (Silicon Limited) 192A
TO-220AB
IRF100B201
S
D
G
G D S
Gate Drain Source
Base part number Package Type Standard Pack
Form Quantity
IRF100B201 TO-220 Tube 50 IRF100B201
Orderable Part Number
IRF100S201 D2-Pak Tape and Reel 800 IRF100S201
StrongIRFET™
IRF100B201
IRF100S201
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On– Resistance vs. Gate Voltage
S
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D2-Pak
IRF100S201
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25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
40
80
120
160
200
ID, Drain Current (A)
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
2
4
6
8
10
12
14
16
18
20
RDS(on), Drain-to -Source On Resistance (m)
ID = 115A
TJ = 25°C
TJ = 125°C
Parameter Avalanche Characteristics EAS helm limiled EAS lesled IAR EAR Thermal Resistance Parameter Static T1 = 25°C unless otherwise 5 ecilied htl ://www.irf.com/technicalrinfo/a notes/an7994. dl - www.i com Submit Dalasheel Feedback
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Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.1 ––– V/°C Reference to 25°C, ID = 5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.2 m VGS = 10V, ID = 115A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =100 V, VGS = 0V
––– ––– 250 VDS = 80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 2.2 ––– 
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 115A, VGS =10V.
 ISD 115A, di/dt 1400A/µs, VDD V(BR)DSS, TJ 175°C.
 Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R
is measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 45A, VGS =10V.
This value determined from sample failure population, starting TJ =25°C, L= 86µH, RG = 50, IAS =115A, VGS =10V.
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy  567
EAS (Thermally limited) Single Pulse Avalanche Energy  1005
IAR Avalanche Current See Fig 15, 15, 23a, 23bA
EAR Repetitive Avalanche Energy mJ
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value  240
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 0.34
RCS Case-to-Sink, Flat Greased Surface 0.50 –––
RJA Junction-to-Ambient ––– 62
°C/W
RJA Junction-to-Ambient (PCB Mount) ––– 40
Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 192
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 136
IDM Pulsed Drain Current  690
PD @TC = 25°C Maximum Power Dissipation 441 W
Linear Derating Factor 2.9 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ
TSTG
Operating Junction and
Storage Temperature Range -55 to + 175 °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
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Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 278 ––– ––– S VDS = 10V, ID = 115A
Qg Total Gate Charge ––– 170 255
nC
ID = 115A
Qgs Gate-to-Source Charge ––– 46 ––– VDS = 50V
Qgd Gate-to-Drain Charge ––– 45 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 125 –––
td(on) Turn-On Delay Time ––– 17 –––
ns
VDD = 65V
tr Rise Time ––– 97 ––– ID = 115A
td(off) Turn-Off Delay Time ––– 110 ––– RG= 2.7
tf Fall Time ––– 100 ––– VGS = 10V
Ciss Input Capacitance ––– 9500 –––
pF
VGS = 0V
Coss Output Capacitance ––– 660 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz, See Fig.TBD
Coss eff.(ER)
Effective Output Capacitance
(Energy Related) ––– 725 ––– VGS = 0V, VDS = 0V to 80V
Coss eff.(TR) Output Capacitance (Time Related) ––– 950 ––– VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 192
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 690 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 115A,VGS = 0V
trr Reverse Recovery Time ––– 47 –––
ns TJ = 25°C VDD = 85V
––– 55 ––– TJ = 125°C IF = 115A,
Qrr Reverse Recovery Charge ––– 90 –––
nC TJ = 25°C di/dt = 100A/µs
––– 123 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 3.5 ––– A TJ = 25°C
dv/dt Peak Diode Recovery dv/dt ––– 18 ––– V/ns TJ = 175°C,IS =115A,VDS = 100V
D
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Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
60µs PULSE WIDTH
Tj = 25°C
4.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
60µs PULSE WIDTH
Tj = 175°C
4.0V
12345678
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 50V
60µs PULSE WIDTH
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 115A
VGS = 10V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 40 80 120 160 200 240
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID = 115A
ISBR VGS : 5 0V VGS : 5 5V VGS : 60V VGS : 70V VGS : BOV oPEmmoN m was Tc : 25%: T] : 175‘s Submn Da‘ashee‘ Feedback
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Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
Fig 13. Typical On– Resistance vs. Drain Current
Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
90
100
110
120
130
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5.0mA
-10 0 10 20 30 40 50 60 70 80 90 100
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Energy (µJ)
040 80 120 160 200
ID, Drain Current (A)
2
4
6
8
10
RDS(on), Drain-to -Source On Resistance (m)
VGS = 5.0V
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
ISBR SINGLE PULS ates 1 Duty Factor D :11/12 pu‘sewxdth, (av, assummg pu‘sewxdlh, tav, - www irf.com Submn Da‘ashee‘ Feedback
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Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
E
AS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy vs. Temperature
Fig 15. Avalanche Current vs. Pulse Width
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 115A
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Fig 21. Typical Stored Charge vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th), Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
0
5
10
15
20
25
30
35
IRRM (A)
IF = 77A
VR = 85V
TJ = 25°C
TJ = 125°C
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
0
5
10
15
20
25
30
35
IRRM (A)
IF = 115A
VR = 85V
TJ = 25°C
TJ = 125°C
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
0
200
400
600
800
1000
QRR (nC)
IF = 77A
VR = 85V
TJ = 25°C
TJ = 125°C
Fig 18. Typical Recovery Current vs. dif/dt
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
0
200
400
600
800
1000
QRR (nC)
IF = 115A
VR = 85V
TJ = 25°C
TJ = 125°C
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Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 23a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 24a. Switching Time Test Circuit
Fig 25a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 23b. Unclamped Inductive Waveforms
Fig 24b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 25b. Gate Charge Waveform
VDD
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TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IN T E R N A T IO N A L PART NUMBER
R E C T IF IE R
LO T C O D E
ASSEM BLY
LO G O
YEAR 0 = 2000
DATE CODE
W EEK 19
LIN E C
LOT CODE 1789
E X A M P L E : T H IS IS A N IR F 1 0 1 0
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead - Free"
IN TH E ASSEM BLY LINE "C"
ASSEM BLED O N W W 19, 2000
TO-220AB packages are not recommended for Surface Mount Application.
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IRF100B201/IRF100S201
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D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
DATE CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
RECTIFIER
INTERNATIONAL PART NUMBER
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
F530S
IN THE ASSEMBLY LINE "L"
ASSEMBLED ON WW 02, 2000
THIS IS AN IRF530S WITH
LOT CODE 8024 INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
ASSEMBLY YEAR 0 = 2000
PART NUMBER
DATE CODE
LINE L
WEEK 02
OR
F530S
LOGO
ASSEMBLY
LOT CODE
hfig l/www \n‘.com/gackage/ Submit Da‘ashee‘ Feedback
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3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IR — Qualification lnformation' hngzllwwwjrf com/produci-info/reiiability/ International IEBR Rectifier hug://www.irf.com/whoio-cai|/ - www.irf.com Submit Daiasheei Feedback
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† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-220 N/A
D2Pak MSL1
RoHS Compliant Yes
Moisture Sensitivity Level
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/