AH8501 Datasheet by Diodes Incorporated

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AH8501
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AH8501
HIGH ACCURACY LOW POWER / MICROPOWER
LINEAR HALL EFFECT SENSOR
Description
The AH8501 is a high accuracy, low power/micropower
linear Hall
effect sensor with an 8-bit output resolution.
The output voltage is
ratiometric to the supply voltage and proportional to the magnetic flux
density, perpendicular to the part marking surface
. The output null
voltage is at half the supply voltage.
AH8501 is a trimmed device with typical sensitivity
3.8mV/G at 1.8V and 3V respectively with an accuracy of 3% at 25°
C.
The device has a typical input referred rms noise of 0.36G and
0.24G
at 1.8V and 3.0V.
Designed for battery powered consumer equipment to office
equipment, home appliances and industrial applications, the AH8501
can operate over the supply range of 1.6V to 3.6
V and uses an
externally controlled ENABLE pin clocking system to control
operating
modes and sampling rates to minimize the power consumption.
The
typical average operating supply current is between 8.9µA
during
sleep mode and 1.16mA at maximum sampling rate
at 1.8V. With a
conversion pulse every 50ms at the ENABLE pin, the
device achieves
a micropower operation with the power consumption of 22µ
W typical
at 1.8V supply.
To minimize PCB space the AH8501 are available in small,
low profile
U-DFN2020-6.
Features
High Accuracy Linear Hall Effect Sensor with +/-400G Sense
Range and Output Voltage with 8-bit resolution
Supply Voltage of 1.6V to 3.6V
High Accuracy: Trimmed Sensitivity of 2.25mV/G and 3.8mV/G
at 1.8V and 3V Respectively with Accuracy of 3% at +25°C
Low Offset Voltage
Low Average Supply Current
8.9µA Typical in Sleep Mode (Default) at 1.8V
1.01mA Typical in Auto-Run Mode (6.25kHz) at 1.8V
12µA Typical in External Drive Mode with 20Hz Sample
Rate at 1.8V
1.16mA Typical in External Drive Mode with 7.14kHz
Sample Rate at 1.8V
Chopper Stabilized Design with Superior Temperature Stability,
Minimal Sensitivity Drift, Enhanced Immunity to Physical Stress
Output Voltage Maintained at ‘Sleep’ Mode
-40°C to +85°C Operating Temperature
High ESD Capability of 6kV Human Body Model
Small Low Profile U-DFN2020-6 Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Pin Assignments
(Top View)
U-DFN2020-6
Applications
High Accuracy Level, Proximity, Position and Travel Detection
Button Press Detection in Digital Still, Video Cameras and
Handheld Gaming Consoles
Accurate Door, Lids and Tray Position Detection
Liquid Level Detection
Joy Stick Control – Gaming and Industrial Applications
Contact-Less Level, Proximity and Position Measurement in
Home Appliances and Industrial Applications
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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AH8501
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AH8501
Typical Applications Circuit
Note: 4. C
IN
is for power stabilization and to strengthen the noise immunity, the recommended capacitance is 100nF typical and should be placed as close to
the supply pin as possible.
Pin Descriptions
Package: U-DFN2020-6
Pin Number Pin Name Function
1 OUTPUT Output Pin
2 NC No Connection (Note 5)
3 V
DD
Power Supply Input
4 ENABLE
Device “Awake” and “Sleep” control pin:
An external PWM signal to the ENABLE pin controls the operating modes
(Sleep Mode, Auto-Run Mode and External Drive Mode), awake and sleep
periods to adjust the sampling rate and to minimize the power consumption
to achieve micropower operation.
When the ENABLE = GND continuously the device is in sleep mode
consuming only 8.9µA typical at 1.8V. When the ENABLE pin is left floating,
the device defaults to sleep mode. The ENABLE pin is internally pulled low.
When ENABLE = V
DD
(or Logic High) continuously, device is in auto-run
mode with sampling rate of 6.25kHz typical consuming 1.01mA at 1.8V
In external drive mode, an external PWM signal can be used to drive the
ENABLE pin to adjust the sampling frequency up to 7.14kHz typical.
A minimum pulse width needed on ENABLE pin to start one Awake/Sleep
cycle (i.e. one sample/conversion cycle) is 20µs typical. We recommended
using a pulse width of 40µs minimum. The minimum awake period for one
sample/conversion cycle is140µs typical.
5 GND Ground Pin
6 NC No Connection (Note 5)
Pad Pad
The center exposed pad – No connection internally.
The exposed pad can be left open (unconnected) or tied to the GND on the
PCB layout.
Note: 5. NC is “No Connection” pin and is not connected internally. This pin can be left open or tied to ground.
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AH8501
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AH8501
Functional Block Diagram
ms HZ, HZ,
AH8501
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AH8501
Absolute Maximum Ratings
(Note 6) (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Rating Unit
V
DD
and V
OUT
Supply Voltage and Output Voltage (Note 7) 4 V
V
DD_REV
and
V
OUT_REV
Reverse Supply and Output Voltage -0.3 V
I
OUT
Output Current (limited by 10kOhms output resistor) V
DD
/10 mA
B Magnetic Flux Density Withstand Unlimited
P
D
Package Power Dissipation U-DFN2020-6 230 mW
Ts Storage Temperature Range -65 to +150 °C
T
J
Maximum Junction Temperature 150 °C
ESD HBM Human Body Model (HMB) ESD Capability 6 kV
Notes: 6. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
7. The absolute maximum V
DD
of 4V is a transient stress rating and is not meant as a functional operating condition. It is not recommended to
operate the device at the absolute maximum rated conditions for any period of time.
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Conditions Rating Unit
V
DD
Supply Voltage Operating 1.6V to 3.6V V
T
A
Operating Temperature Range Operating -40 to +85 °C
Electrical Characteristics
(Notes 8 & 9) (@T
A
= +25°C, V
DD
= 1.8V, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
Supply Current
I
DD_AWAKE
Supply Current in Awake Period
(During “Awake” Period)
V
OUTPUT
= V
DD
/2, ENABLE = V
DD
, V
DD
= 1.8V
(Note 10) - 1.35 1.7
mA
V
OUTPUT
= V
DD
/2, ENABLE = V
DD
, V
DD
= 3V
(Note 10) - 1.92 2.4
I
DD_SLEEP
Supply Current in Sleep Mode
(During ‘Sleep’ Period)
V
OUTPUT
= V
DD
/2, ENABLE = GND, V
DD
= 1.8V - 8.93 15 µA
V
OUTPUT
= V
DD
/2, ENABLE = GND, V
DD
= 3V - 11.1 18
I
DD_20Hz
Average Supply Current at 20Hz
Sample Rate
V
OUTPUT
= V
DD
/2, ENABLE clocking at 20Hz
frequency, V
DD
= 1.8V (Note 10) - 12.1 20 µA
V
OUTPUT
= V
DD
/2, ENABLE clocking at 20Hz
frequency, V
DD
= 3V (Note 10) - 15.7 25 µA
I
DD_7kHz
Average Supply Current at 7.14kHz
Sample Rate
V
OUTPUT
= V
DD
/2, ENABLE clocking at 7.14kHz
,
V
DD
= 1.8V (Note 10) - 1.16 1.5 mA
V
OUTPUT
= V
DD
/2, ENABLE clocking at 7.14kHz
,
V
DD
= 3V (Note 10) - 1.65 2.1 mA
I
DD_AUTORUN
Average Supply Current in Auto-Run
Mode when ENABLE = Logic High
(or V
DD
) Continuously
(The sampling frequency when
ENABLE = High continuously is
6.25kHz)
V
OUTPUT
= V
DD
/2, ENABLE = V
DD
, V
DD
= 1.8V
(Note 10) - 1.01 1.3 mA
V
OUTPUT
= V
DD
/2, ENABLE = V
DD
, V
DD
= 3V
(Note 10) - 1.44 1.8 mA
Notes: 8. When power is initially turned on, the operating V
DD
(1.6V to 3.6V) must be applied to guarantee the output sampling.
After the supply voltage reaches minimum operating voltage, the output state is valid after 140us after the ENABLE pin pulled or clocked high.
9. Typical data is at T
A
= +25°C, V
DD
= 1.8V unless otherwise stated.
10. The parameters are not tested in production, they are guaranteed by design, characterization and process control.
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AH8501
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AH8501
Electrical Characteristics
(cont)
(@T
A
= +25°C, V
DD
= 1.8V, unless otherwise specified.)
ENABLE Pin Timing, Conversion Rate and I
DD
Supply Current Relationship
ms e14
AH8501
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AH8501
Electrical Characteristics
(cont.)
(Notes 11, 12 & 13) (@T
A
= +25°C, V
DD
= 1.8V, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
t
ON_INITIAL
Initial Power On Time
V
DD
= 1.8V, T
A
= +25°C, C
IN
=0.1uF,
V
DD
rise time =10us,
(Note 14)
- 1 - ms
V
DD
= 3V, T
A
= +25°C, C
IN
=0.1uF,
V
DD
rise time =10us,
(Note 14)
- 0.2 - ms
t
en
Minimum Pulse Width on ENABLE
Pin To Start One Conversion Cycle
When Driving ENABLE pin
Externally
(See application note section)
V
DD
= 1.6V to 3.6V, T
A
= -40°C to +85°C
(Note 14) - 20 - µs
T
CONV
Minimum Period of One
Sample/Conversion Cycle
V
DD
= 1.6V to 3.6V, T
A
= -40°C to +85°C
(Note 14) 100 140 200 µs
f
MAX
Maximum Sampling Frequency V
DD
= 1.6V to 3.6V, T
A
= -40°C to +85°C,
(Note 14) - 7.14 - kHz
f
EN_HIGH
Sampling Frequency when
ENABLE = Logic High (or V
DD
)
continuously.
ENABLE = High (V
DD
),
V
DD
= 1.6V to 3.6V, T
A
= -40°C to +85°C
(Note 14)
- 6.25 - kHz
V
EN_LOW
Enable pin input low voltage V
DD
= 1.8V (Note 13) 0.4 0.5 0.6 V
V
DD
= 3.0V (Note 13) 0.8 0.9 1 V
V
EN_HIGH
Enable pin input high voltage V
DD
= 1.8V (Note 13) 1.2 1.3 1.4 V
V
DD
= 3V (Note 13) 2.2 2.3 2.4 V
Output Characteristics
R
OUT
DC Output Resistance
ENABLE = V
DD
or GND,
V
DD
= 1.6V to 3.6V, T
A
= -40°C to +85°C,
(Note 14)
- 10 13 k
Noise_RMS Input Referred Noise, RMS (Note 14)
C
IN
= Open, V
DD
= 1.8V, T
A
= +25°C, - 0.36 - G
C
IN
= Open, V
DD
= 3.0V, T
A
= +25°C, - 0.24 - G
ADC
RES
DAC
RES
Internal ADC and DAC resolution (Note 14) - 8 - Bit
V
OUT_RES
Output Voltage Resolution V
DD
= 1.6V to 3.6V, T
A
= -40°C to +85°C - V
DD
/256 - mV
V
OUTH
Max. Output Voltage V
DD
= 1.6V to 3.6V, T
A
= -40°C to +85°C -
V
DD
*255/256
-
V
V
OUTL
Min. Output Voltage V
DD
= 1.6V to 3.6V, T
A
= -40°C to +85°C - 0
-
V
Notes: 11. When power is initially turned on, the operating V
DD
(1.6V to 3.6V) must be applied to guarantee the output sampling.
The output state is valid after t
ON_INITIAL
from the supply voltage reaching the minimum operating voltage.
12. Typical data is at T
A
= +25°C, V
DD
= 1.8V unless otherwise stated.
13. Maximum and minimum parameters values over operating temperature range are not tested in production, they are guaranteed by design,
characterization and process control.
14. The parameter is not tested in production, they are guaranteed by design, characterization and process control.
mDEs peralure
AH8501
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AH8501
Electrical Characteristics
(cont.)
(Notes 11, 12 & 13) (@T
A
= +25°C, V
DD
= 1.8V, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
Magnetic Characteristics
B
RANGE
Measurable Magnetic Flux Density
Range
V
DD
= 1.8V, T
A
=+25°C ±388 ±400 ±412 G
V
DD
= 3V, T
A
=+25°C ±382 ±395 ±408 G
G
RES
Gauss Resolution
V
DD
= 1.8V, T
A
=+25°C 3.033 3.125 3.221 G/LSB
V
DD
= 3V, T
A
=+25°C 2.994 3.084 3.179 G/LSB
V
NULL
Quiescent Output Voltage with zero
gauss
B = 0.5G, T
A
= +25°C - V
DD
/ 2 - V
V
DD
= 1.8V, T
A
= +25°C 0.882 0.9 0.918 V
V
DD
= 3V, T
A
= +25°C 1.47 1.5 1.53 V
V
OFFSET
Quiescent Output Voltage Offset
B = 0.5G, V
DD
= 1.8V, T
A
= +25°C -1% - 1% % of V
DD
B = 0.5G, V
DD
= 3V, T
A
= +25°C -1% - 1% % of V
DD
B = 0.5G, V
DD
= 1.6V to 3.6V,
T
A
= -40°C to +85°C
(Note 14)
-1.5 - 1.5 % of V
DD
V
SENS
Output Voltage Sensitivity V
DD
= 1.8V, T
A
= +25°C 2.183 2.25 2.318 mV/G
V
DD
= 3V, T
A
= +25°C 3.686 3.80 3.914
V
SENS_ACC
Sensitivity Accuracy
V
DD
= 1.8V, T
A
= +25°C -3 - 3 %
V
DD
= 3V, T
A
= +25°C -3 - 3 %
V
DD
= fixed at any one voltage between 1.6V
to 3.6V,
T
A
= -40°C to +85°C
(Note 14, Note 15)
-6 - 6 %
TC_ERR
SENS
Sensitivity error over full temperature
V
DD
=fixed, T
A
= -40°C to +85°C, (Note 14) -3 - 3 %
Lin+ Positive linearity (span linearity) V
DD
= 1.8V, T
A
= +25°C (Note 14) - 99.9 - %
V
DD
= 3.0V, T
A
= +25°C (Note 14) - 99.7 - %
Lin- Negative linearity (span linearity) V
DD
= 1.8V, T
A
= +25°C (Note 14) - 100.1 - %
V
DD
= 3.0V, T
A
= +25°C (Note 14) - 100.4 - %
Notes: 11. When power is initially turned on, the operating V
DD
(1.6V to 3.6V) must be applied to guarantee the output sampling.
The output state is valid after t
ON_INITIAL
from supply voltage reaching the minimum operating voltage.
12. Typical data is at T
A
= +25°C, V
DD
= 1.8V unless otherwise stated.
13. Maximum and minimum parameters values over operating temperature range are not tested in production, they are guaranteed by design,
characterization and process control.
14. The parameter is not tested in production, they are guaranteed by design, characterization and process control.
15. This term constitutes of output voltage sensitivity temperature coefficient error and sensitivity trim accuracy.
mDEs Gauss Output Vo‘tage (VouTPur) E 5 0 figs 0 +975 Magnetic Flux Density (B)
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AH8501
Application Note
ENABLE Pin - Awake and Sleep Period Control
ENABLE pin controls the device’s “Awake” and “Sleep” periods and operating modes (Sleep, Auto-Run and External Drive modes).
When the ENABLE pin is pulled low (ENABLE = GND) continuously, the device enters sleep mode where the supply current is 8.93µA typical at
V
DD
= 1.8V (the output is 0.9V). The ENABLE pin is internally pulled low and therefore the default mode is the sleep mode if the ENABLE pin is
left floating.
When the ENABLE pin is pulled high (ENABLE = V
DD
or pulled high) the device enters auto-run mode with the conversion time T
CONV
of 16 clock
cycles (160µs typical) and therefore the sampling rate is 6.25kHz. The average supply current with the ENABLE pin pulled high continuously is
1.01mA at V
DD
= 1.8V.
In external drive mode, the sample rate can be controlled between 0 to 7.14kHz by clocking the ENABLE pin with an external PWM signal. The
minimum pulse width needed on the ENABLE pin to start sample/conversion is 20µs typical; we recommend using pulse width of 40µs minimum.
When the ENABLE pin is clocked, the conversion time (signal acquisition, conversion and output update) T
CONV
is 14 clock cycles (140µs
typical). When the ENABLE goes high, the sample trigger delay is 1 clock pulse (10µs) where supply current remains at 8.93µA typical at V
DD
=
1.8V. After the sample trigger delay, the next 12 clock pulse (120µs typical) is ‘Awake’ period where the typical supply current is 1.35mA at 1.8V
supply. The next pulse (10µs) is used to update the output stage and during this time the supply current drops back to 8.93µA typical at 1.8V
supply. Therefore, the average supply current while the device is at the maximum sampling rate of 7.14kHz is 1.16mA typical at 1.8V supply. At
a sampling rate of 20Hz, the supply current is 12µA typical at V
DD
= 1.8V achieving micropower operation.
For ENABLE pin clocking period of T, the average current is given by

 

(@ 1.8V)

 




(General equation)
Quiescent Output Voltage V
NULL
and Offset Voltage
The figure below shows the ideal transfer curve near zero magnetic field (B = 0Gauss). Zero Gauss is the transition point between
V
OUTPUT
= V
DD
*127/128 and V
OUTPUT
= V
DD
/2. When B is slightly larger than zero, the output is one-half the supply voltage typically.
Quiescent output voltage (V
NULL
) is defined as the typical output voltage when B = 0.5Gauss (slightly higher than 0G). Any difference of V
NULL
from V
DD
/2 introduces offset (V
OFSET
).
Transfer Curve Near 0 Gauss
// %
AH8501
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AH8501
Application Note
(continued)
Sensitivity and Transfer Characteristic
The device responds to the magnetic flux density perpendicular to the part marking surface. For South pole magnetic flux density increase from
0G, the output voltage will increase from V
NULL
and for a North magnetic pole field, the output will decrease from V
NULL
. The changes in the
voltage level up or down are symmetrical to V
NULL
and are proportional to the magnetic flux density.
The output voltage change is proportional to the magnitude and polarity of the magnetic field perpendicular to the part marking surface. This
proportionality is defined as output voltage sensitivity and is given by

  

 



 

The AH8501 has a measurable magnetic field range of +/-400G and output voltage range of 0V to (255/256)V
DD
. Therefore sensitivity at 1.8V is
given by

  
   
The device has an internal ADC and DAC with a resolution of 8-bits. Therefore, the measurement resolution is 3.125G/LSB at V
DD
= 1.8V. In
terms of voltage, the output resolution at 1.8V is 7mV/LSB typical. The device follows the 8-bit step for transfer curve superimposed on the
V
SENS
above. This difference in theoretical linear value with 8-bit resolution steps produces a measurement (quantization) error at each step.
Quantization error (also measurement error) = 0.5*step = V
DD
/512(output voltage), OR
= Full magnetic range/512 (input magnetic field)
Transfer Curve – Output Voltage vs. Magnetic Flux Density
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
3.6
3.9
-500 -400 -300 -200 -100 0 100 200 300 400 500
Output Voltage V
OUTPUT
(V)
Magnetic Flux Density, B (Gauss)
TA= +25 °C3.6V
3.3V
3.0V
1.8V
1.6V
AH8501 ms Umpm Ma chm 3254 azsn EZSI am 3 am
AH8501
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Application Note
(cont.)
Span Linearity
The coordinate of transition points (V0~V255 and B0~B254) can be extracted from a transfer curve. Span linearity is defined and based on these
coordinate points.
Span linearity is defined as linearity arising from sensitivity differences between the maximum flux density range and half of the range for positive
and negative flux density. Referring to the diagram below, north field span linearity LIN- and south field span linearity LIN+ are given by
     
    
     
    
mDEs
AH8501
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Typical Operating Characteristics
Average Supply Current
Sleep Mode
Sleep Mode
External Drive Mode - 20Hz Sample Rate
External Drive Mode - 20Hz Sample Rate
Auto-Run Mode - 6.25kHz Sampling Rate
Auto-Run Mode Mode - 6.25kHz Sample Rate
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8
Avgerage Supply Current I
DD_SLEEP
(µA)
Supply Voltage (V)
Average Supply Current (ENABLE = GND) vs Supply Voltage
ENABLE = GND, T
A
= +25 °C,
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Average Supply Current I
DD
(µA)
Temperature (
o
C)
Average Supply Current (ENABLE = GND) vs Temperature
ENABLE = GND
1.6V
1.8V
2.5V
3.0V
3.3V
3.6V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8
Average Supply Current I
DD_20Hz
(µA)
Supply Voltage (V)
Average Supply Current (ENABLE = PWM) vs Supply Voltage
ENABLE = 140µs pulse 20Hz PWM, T
A
= +25 °C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Average Supply Current I
DD
(µA)
Temperature (
o
C)
Average Supply Current (ENABLE = PWM) vs Temperature
ENABLE = 140µs pulse 20Hz PWM
1.6V
1.8V
2.5V
3.0V
3.3V
3.6V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8
Average Supply Current IDD (mA)
Supply Voltage (V)
Average Supply Current (ENABLE = VDD) vs Supply Voltage
ENABLE = VDD , TA= +25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Average Supply Current I
DD
(mA)
Temperature (
o
C)
Average Supply Current (ENABLE = V
DD
) vs Temperature
ENABLE = V
DD
1.6V
1.8V
2.5V
3.0V
3.3V
3.6V
AH8501
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AH8501
Typical Operating Characteristics
(continued)
Typical Initial Power On Time
Typical Sensitivity
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
Initial Power On Time t
ON_INITIAL
(ms)
Supply Voltage (V)
Initial Power On Time vs Supply Voltage
C
IN
= 0.1µF, V
DD
rise time 10µs, T
A
= +25 °C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Initial Power On Time t
ON_INITIAL
(ms)
Temperature (
o
C)
Initial Power On Time vs Temperature
1.6V
1.8V
2.5V 3.0V 3.3
V
3.6
V
C
IN
= 0.1µF, V
DD
rise time 10µs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8
Sensitivity (mV/Gauss)
Supply Voltage (V)
Sensitivity vs Supply Voltage
T
A
= +25 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Sensitivity (mV/Gauss)
Temperature (
o
C)
Sensitivity vs Temperature
1.6V
1.8V
2.5V
3.0V
3.3V
3.6V
2.10
2.15
2.20
2.25
2.30
2.35
2.40
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Sensitivity (mV/Gauss)
Temperature (
o
C)
Sensitivity vs Temperature
1.8V
V
DD
= 1.8V
3.50
3.60
3.70
3.80
3.90
4.00
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Sensitivity (mV/Gauss)
Temperature (
o
C)
Sensitivity vs Temperature
3.0V
V
DD
= 3.0V
\ W .l\ A
AH8501
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AH8501
Typical Operating Characteristics
(cont.)
Typical Transfer Curves
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
3.6
3.9
-500 -400 -300 -200 -100 0 100 200 300 400 500
Output Voltage V
OUTPUT
(V)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magnetic Flux Density
T
A
= +25 °C3.6V
3.3V
3.0V
1.8V
1.6V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-500 -400 -300 -200 -100 0 100 200 300 400 500
Output Voltage V
OUTPUT
(V)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magntic Flux Density
-40C
0C
25C
85C
V
DD
= 1.6V, T
A
= -40 °C to +85 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-500 -400 -300 -200 -100 0 100 200 300 400 500
Output Voltage V
OUTPUT
(V)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magntic Flux Density
-40C
0C
25C
85C
V
DD
= 1.8V, T
A
= -40 °C to +85 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-500 -400 -300 -200 -100 0 100 200 300 400 500
Output Voltage V
OUTPUT
(V)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magntic Flux Density
-40C
0C
25C
85C
V
DD
= 3.0V, T
A
= -40 °C to +85 °C
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
3.6
-500 -400 -300 -200 -100 0 100 200 300 400 500
Output Voltage V
OUTPUT
(V)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magntic Flux Density
-40C
0C
25C
85C
V
DD
= 3.3V, T
A
= -40 °C to +85 °C
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
3.6
3.9
-500 -400 -300 -200 -100 0 100 200 300 400 500
Output Voltage V
OUTPUT
(V)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magntic Flux Density
-40C
0C
25C
85C
V
DD
= 3.6V, T
A
= -40 °C to +85 °C
mDEs E E
AH8501
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AH8501
Typical Operating Characteristics
(cont.)
Typical
Null Voltage:
Output Voltage at B = 0+ Gauss
(Note 16)
Note: 16. Null voltage is the voltage with magnetic flux density B = 0G at the sensor. B = 0G is also the transistion point at V
DD
*127/128 for internal ADC and
DAC. To avoid the transition point fluctuation during measurement of null voltage, B = 0+ Gauss (e.g. 0.5G which is smaller than the 1LSB gauss step
of 3.125G) is used. See definition of the null voltage in application section.
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8
Null Voltage (V)
Supply Voltage (V)
Null Voltage vs Supply Voltage
B = 0+ Gauss, T
A
= +25 °C
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Null Voltage (V)
Temperature (
o
C)
Null Voltage vs Temperature
1.6V
1.8V
2.5V
3.0V
3.3V
3.6V
B = 0+ Gauss
0.880
0.885
0.890
0.895
0.900
0.905
0.910
0.915
0.920
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Null Voltage (V)
Temperature (
o
C)
Null Voltage vs Temperature
1.8V
B = 0+ Gauss, V
DD
= 1.8V
1.45
1.46
1.47
1.48
1.49
1.50
1.51
1.52
1.53
1.54
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Null Voltage (V)
Temperature (
o
C)
Null Voltage vs Temperature
3.0V
B = 0+ Gauss, V
DD
= 3.0V
mDEs
AH8501
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AH8501
Typical Operating Characteristics
(cont.)
Typical
Null Voltage Offset:
(Output Voltage - V
DD
/2) at B = 0+ Gauss
(Note 16)
Note: 16. Null voltage is the voltage with magnetic flux density B = 0G at the sensor. B = 0G is also the transistion point at V
DD
*127/128 for internal ADC and
DAC. To avoid the transition point fluctuation during measurement of null voltage, B = 0+ Gauss (e.g. 0.5G which is smaller than the 1LSB gauss step
of 3.125G) is used. See definition of the null voltage in application section.
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8
Null Voltage Offset (mV)
Supply Voltage (V)
Null Voltage Offset vs Supply Voltage
B = 0+ Gauss, T
A
= +25 °C
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Null Voltage Offset (mV)
Temperature (oC)
Null Voltage Offset vs Temperature
1.6V
1.8V
2.5V
3.0V
3.3V
3.6V
B = 0+ Gauss
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
4.0
5.0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Null Voltagte Offset (mV)
Temperature (
o
C)
Null Voltage Offset vs Temperature
1.8V
B = 0+ Gauss, V
DD
= 1.8V
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Null Voltage Offset (mV)
Temperature (
o
C)
Null Voltage Offset vs Temperature
3.0V
B = 0+ Gauss, V
DD
= 3.0V
AH8501 AH8501 - XXX -X l—‘\—| Package Packing FDC ' U-DFNZOZO-G 7' Tape & Reel ( Top View) fl : Identification Code xx 1 : Year : 0~9 — VJ : Week :A~Z : 1~26 week; a~z : 27~52 week 2 represents IV—Vl 52 and 53 week 0 X : Internal Code
AH8501
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AH8501
Ordering Information
Part Number Package
Code Packaging 7” Tape and Reel
Quantity Part Number Suffix
AH8501-FDC-7 FDC U-DFN2020-6 3,000/Tape & Reel -7
Marking Information
(1) Package Type: U-DFN2020-6
Part Number Package Identification Code
AH8501-FDC-7 U-DFN2020-6 KR
AH8501 4 WWW Top View 0.86/1 .06 m ‘_- 7 \ ‘7 ‘ 7 ‘ '53 "'Hali’éensor o PART MARKWG SURFACE Min/Max (in mm) A/ I l 0.20/0.40 (157/063
AH8501
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AH8501
Package Outline Dimensions
(All dimensions in mm.)
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
(1) Package Type: U-DFN2020-6
Bottom View
Sensor Location (TBD)
D
D2
E
eb
L
E2
A
A1
A3 Seating Plane
Pin #1 ID
Z(4x)
U
-
DFN2020
-
6
Type C
Dim
Min
Max
Typ
A
0.57 0.63 0.60
A1
0.00 0.05 0.02
A3
- - 0.15
b
0.25 0.35 0.30
D
1.95 2.075
2.00
D2
1.55 1.75 1.65
E
1.95 2.075
2.0
E2
0.86 1.06 0.96
e
- - 0.65
L
0.25 0.35 0.30
Z
- - 0.20
All
Dimensions in mm
AH8501 X2 x1
AH8501
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AH8501
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
(1)
Package Type: U-DFN2020-6
Dimensions
Value (in mm)
C
0.650
X
0.350
X1
1.650
X2
1.700
Y
0.525
Y1
1.010
Y2
2.400
mDEs
AH8501
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AH8501
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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