DMP6023LE Datasheet by Diodes Incorporated

as as Pm ow Top v \ 1 ( Ordering Information (Nam 4) Pan Number Compliance DMPEDZ3LE-13 Standard Notes 1 EU meme zuuz/as/Ec (RuHS) &20H/SS/EU (RoHS 2’ cumphanl AH Ep 2 See mm waw diodes cum/quahty/leadjree mm [or more Inlurmauun abou and Lemma 3 Ha‘ugenr and Anumonyriree ”Green" products are defined as muse whmh c <1000ppm anumony="" cumpmmds="" 4="" for="" packagmg="" deiafls="" go="" m="" our="" website="" at="" hug="" waw="" modes="" cum/prududs/="" marking="" information="" dmp6023le="" 10”="" document="" number="" 0537199="" rev="" 372="" www.diodss.cum="">
DMP6023LE
Document number: DS37199 Rev. 3 - 2
1 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LE
ADVANCE INFORMATION
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
T
A
= +25°C
-60V 28m @ VGS = -10V -7A
35m @ VGS = -4.5V -6.2A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMP6023LE-13 Standard SOT223 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Equivalent Circuit
D
S
G
Pin Out - Top View
Top View
SOT223
Green
= Manufacturer’s Marking
P6023 = Marking Code
YWW = Date Code Marking
Y or Y= Year (ex: 4 = 2014)
WW = Week (01 - 53)
P6023
Y
WW
17 January 2015 dss.cum 'c We; mmmma
DMP6023LE
Document number: DS37199 Rev. 3 - 2
2 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LE
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5) VGS = -10V
TA = +25°C
TA = +70°C ID -7
-5.6 A
TC = +25°C
TC = +70°C ID -18.2
-14.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -50 A
Maximum Continuous Body Diode Forward Current (Note 5) IS -2 A
Avalanche Current, L = 0.1mH IAS -35.5 A
Avalanche Energy, L = 0.1mH EAS 62.9 mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Total Power Dissipation (Note 5) TA = +25°C
TA = +70°C PD 2
1.3 W
Thermal Resistance, Junction to Ambient (Note 5) RJA 60 °C/W
Total Power Dissipation (Note 5) TC = +25°C PD 17.3 W
Thermal Resistance, Junction to Case (Note 5) RJC 7.2 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -60 — V
VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 µA
VDS = -60V, VGS = 0V
Gate-Source Leakage IGSS — — ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) -1 — -3 V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS(ON) — — 28
m VGS = -10V, ID = -5A
— — 35 VGS = -4.5V, ID = -4A
Diode Forward Voltage VSD — -0.7 -1.2 V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss 2569 pF VDS = -30V, VGS = 0V,
f = 1MHz
Output Capacitance Coss 179 pF
Reverse Transfer Capacitance Crss 143 pF
Gate Resistance Rg — 8 — VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Qg — 26.5 — nC
VDS = -30V, ID = -5A
Total Gate Charge (VGS = -10V) Qg — 53.1 — nC
Gate-Source Charge Qgs — 7.1 — nC
Gate-Drain Charge Qgd — 12.6 — nC
Turn-On Delay Time tD(on) 6 — ns
VGS = -10V, VDS = -30V,
RG = 3, ID = -5A
Turn-On Rise Time tr 7.1 — ns
Turn-Off Delay Time tD(off) 110 — ns
Turn-Off Fall Time tf 62 — ns
Body Diode Reverse Recovery Time trr
20 —
nS IF = -5A, di/dt = 100A/s
Body Diode Reverse Recovery Charge Qrr
14 —
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
m/L 5.55.30 2 ma 7 W/// ”I 025, 1‘ O 0130” NE 0w. 30” In. EmmWSo ma mic mouse NE 1‘20 130” In. 3 of 7 www. ‘odes.com Document number 0537199 Rev 372 DMP6023LE
DMP6023LE
Document number: DS37199 Rev. 3 - 2
3 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LE
ADVANCE INFORMATION
V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
5.0
10.0
15.0
20.0
25.0
30.0
012345
V = -2.8V
GS
V = -3.0V
GS
V = -3.5V
GS
V = -4.5V
GS
V= -10V
GS
V = -5.0V
GS
V = -4.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 150C
A
T = 125C
A
T = 85C
A
T = 25C
A
T = -55C
A
V = -5.0V
DS
I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0 5 10 15 20 25 30
V = -4.5V
GS
V = -10V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 2 4 6 8 101214161820
I= -5.0A
D
I= -4.0A
D
I , DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
0
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30
T = -55C
A
T = 25C
A
T = 85C
A
T = 125 C
A
T = 150 C
A
V = -4.5V
GS
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
V = -4.5V
I = -5A
GS
D
0 P40 01$th 30 v n. 0256530 295231 0 T .fi/ /// W c\ fl/J 025%, ”#20 UZDOw‘Z, NE. w. hzmmmjo ONSOm < «.50="" :rd=""><§o> om DOmQEw V5: Swab Mse E VOL RA 4 of 7 www. 'odes.cum DMP6023LE Document number 0537199 Rev 372
DMP6023LE
Document number: DS37199 Rev. 3 - 2
4 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LE
ADVANCE INFORMATION
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
-50 -25 0 25 50 75 100 125 150
V=5V
I= A
GS
D
-4.
-5
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50 -25 0 25 50 75 100 125 150
-I = 1mA
D
-I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
T= 150C
A
T= 125C
A
T= 85C
A
T= 25C
A
T= -55C
A
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (p
F
)
T
V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
100
1000
10000
0 5 10 15 20 25 30 35 40
C
oss
C
rss
f = 1MHz
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
V,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50 55
V= -30V
I= -5A
DS
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Ar ea
D
N
U
ENT (
)
D
SOA, Safe Operation Area
0.01
0.1
1
10
100
0.1 1 10 100
R
DS(on)
Limit ed
P = 100µs
W
P = 1ms
W
P = 10ms
W
P = 100ms
W
P = 1s
W
P = 10s
W
DC
T = + 150°C
J( m a x)
T = +25°C
A
V = 10V
GS
Single Pulse
DUT on 1 * MRP Board
DMP6023LE 5 o! 7 Documem number 0537155 Rev 372 www.diodes.com
DMP6023LE
Document number: DS37199 Rev. 3 - 2
5 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LE
ADVANCE INFORMATION
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Therm al Resistance
r( t), TRA NSIENT THERMAL RES ISTANCE
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Rthja(t)=r(t) * Rthja
Rthja=101C/W
Duty Cycle, D=t1 / t2
Single Pulse
D = 0.005
D = 0. 01
D = 0. 02
D = 0. 05
D = 0. 1
D = 0. 3
D = 0. 5
D = 0. 7
D = 0. 9
rim 4. T5? :1 fl \‘(T ng <76 4="" dmp6023le="" eof7="" document="" number="" 0537199="" rev="" 372="" www.diodss.cum="">
DMP6023LE
Document number: DS37199 Rev. 3 - 2
6 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LE
ADVANCE INFORMATION
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b 0.60 0.80 0.70
b1 2.90 3.10 3.00
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e - - 4.60
e1 - - 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Dimensions Value (in mm)
C 2.30
C1 6.40
X 1.20
X1 3.30
Y 1.60
Y1 1.60
Y2 8.00
DMP6023LE 70H Document number 0537199 Rev 372 www.d‘ (135.com
DMP6023LE
Document number: DS37199 Rev. 3 - 2
7 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LE
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com