VS-MBRD320,30,40-M3 Datasheet by Vishay General Semiconductor - Diodes Division

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VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
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Revision: 22-Nov-16 1Document Number: 93323
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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High Performance Schottky Rectifier, 3.0 A
FEATURES
Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
Popular D-PAK outline
Small foot print, surface mountable
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
surface mount Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 3.0 A
VR20 V, 30 V, 40 V
VF at IF0.49 V
IRM 20 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 8 mJ
Anode
13
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 20 to 40 V
IFSM tp = 5 μs sine 490 A
VF3 Apk, TJ = 125 °C 0.49 V
TJ-40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRD320-M3 VS-MBRD330-M3 VS-MBRD340-M3 UNITS
Maximum DC reverse voltage VR20 30 40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TL = 133 °C, rectangular waveform 3.0
A
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
490
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 16 mH 8.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
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VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
www.vishay.com Vishay Semiconductors
Revision: 22-Nov-16 2Document Number: 93323
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
3 A TJ = 25 °C 0.48 0.6
V
6 A 0.58 0.7
3 A TJ = 125 °C 0.41 0.49
6 A 0.55 0.625
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.02 0.2 mA
TJ = 125 °C 10.7 20
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 189 - pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 5.0 - nH
Maximum voltage rate of change dV/dt Rated VR- 10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ (1) -40 to +150 °C
Maximum storage temperature range TStg -40 to +175
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 6.0
°C/W
Maximum thermal resistance,
junction to ambient RthJA 80
Approximate weight 0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA)
MBRD320
MBRD330
MBRD340
dPtot
dTJ
------------- 1
RthJA
--------------<
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VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
www.vishay.com Vishay Semiconductors
Revision: 22-Nov-16 3Document Number: 93323
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
0.1
100
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.8 1.2
0.6 1.0
0
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520 4025 30 350
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10515202535404530
0
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
www.vishay.com Vishay Semiconductors
Revision: 22-Nov-16 4Document Number: 93323
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
110
120
130
140
160
150
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
21 345
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
0.5
1.5
2.5
2.0
1.0
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
2
13
45
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
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VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
www.vishay.com Vishay Semiconductors
Revision: 22-Nov-16 5Document Number: 93323
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBRD320-M3 75 3000 Antistatic plastic tube
VS-MBRD320TR-M3 2000 2000 13" diameter reel
VS-MBRD320TRL-M3 3000 3000 13" diameter reel
VS-MBRD320TRR-M3 3000 3000 13" diameter reel
VS-MBRD330-M3 75 3000 Antistatic plastic tube
VS-MBRD330TR-M3 2000 2000 13" diameter reel
VS-MBRD330TRL-M3 3000 3000 13" diameter reel
VS-MBRD330TRR-M3 3000 3000 13" diameter reel
VS-MBRD340-M3 75 3000 Antistatic plastic tube
VS-MBRD340TR-M3 2000 2000 13" diameter reel
VS-MBRD340TRL-M3 3000 3000 13" diameter reel
VS-MBRD340TRR-M3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95627
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
2- Schottky MBR series
3- D = TO-252AA (D-PAK)
4- Current rating (3 = 3 A)
5- Voltage ratings
20 = 20 V
30 = 30 V
40 = 40 V
6- None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
Device code
51 32 4 6 7
VS- MBR D 3 40 TR -M3
- Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
7
1- Vishay Semiconductors product
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Outline Dimensions
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Revision: 24-Jun-16 1Document Number: 95627
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D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
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