VS-50MT060WHTAPBF Datasheet by Vishay General Semiconductor - Diodes Division

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VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 1Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
“Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A
FEATURES
• Gen 4 warp speed IGBT technology
•HEXFRED
® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
PRIMARY CHARACTERISTICS
VCES 600 V
VCE(on) typical at VGE = 15 V 2.3 V
IC at TC = 25 °C 114 A
Speed 30 kHz to 100 kHz
Package MTP
Circuit configuration Half bridge
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current IC
TC = 25 °C 114
A
TC = 109 °C 50
Pulsed collector current ICM 350
Peak switching current ILM 350
Diode continuous forward current IFTC = 109 °C 34
Peak diode forward current IFM 200
Gate to emitter voltage VGE ± 20 V
RMS isolation voltage VISOL Any terminal to case, t = 1 min 2500
Maximum power dissipation PD
TC = 25 °C 658 W
TC = 100 °C 263
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 500 μA 600 - - V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 50 A - 2.3 3.15
V
VGE = 15 V, IC = 100 A - 2.5 3.2
VGE = 15 V, IC = 50 A, TJ = 150 °C - 1.72 2.17
Gate threshold voltage VGE(th) IC = 0.5 mA 3 - 6
Collector to emitter leaking current ICES
VGE = 0 V, IC = 600 A - - 0.4 mA
VGE = 0 V, IC = 600 A, TJ = 150 °C - - 10
Diode forward voltage drop VFM
IF = 50 A, VGE = 0 V - 1.58 1.80
VIF = 50 A, VGE = 0 V, TJ = 150 °C - 1.49 1.68
IF = 100 A, VGE = 0 V, TJ = 25 °C - 1.9 2.17
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA
VISHAY. DwodesAmencasmwshaymm DwodesAswamwshaymm DwodesEuvogeQlehamcom www.v\shay,com/doc?91000
VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 2Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) T0, T1 are thermistor´s temperatures
(2) , temperature in Kelvin
Note
(1) Standard version only i.e. without optional thermistor
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) QgIC = 52 A
VCC = 400 V
VGE = 15 V
- 331 385
nCGate to emitter charge (turn-on) Qge -4452
Gate to collector charge (turn-on) Qgc - 133 176
Turn-on switching loss Eon Internal gate resistors (see electrical diagram)
IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, TJ = 25 °C
-0.26-
mJ
Turn-off switching loss Eoff -1.2-
Total switching loss Ets -1.46-
Turn-on switching loss Eon Internal gate resistors (see electrical diagram)
IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, TJ = 150 °C
-0.73-
mJ
Turn-off switching loss Eoff -1.66-
Total switching loss Ets -2.39-
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1.0 MHz
- 7100 -
pFOutput capacitance Coes - 510 -
Reverse transfer capacitance Cres - 140 -
Diode reverse recovery time trr VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
-8297ns
Diode peak reverse current Irr - 8.3 10.6 A
Diode recovery charge Qrr - 340 514 nC
Diode reverse recovery time trr VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
TJ = 125 °C
- 137 153 ns
Diode peak reverse current Irr - 12.7 14.8 A
Diode recovery charge Qrr - 870 1132 nC
THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R0 (1) T0 = 25 °C - 30 - k
Sensitivity index of the
thermistor material (1)(2) T0 = 25 °C
T1 = 85 °C - 4000 - K
R0
R1
-------1
T0
------ 1
T1
------
–


exp=
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction
temperature range
IGBT, diode TJ
-40 - 150
°CThermistor -40 - 125
Storage temperature range TStg -40 - 125
Junction to case IGBT RthJC
- - 0.38
°C/WDiode - - 0.8
Case to sink per module RthCS Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance (1) External shortest distance in air between 2 terminals 5.5 - -
mm
Creepage (1) Shortest distance along the external surface of the
insulating material between 2 terminals 8--
Mounting torque to heatsink
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 % Nm
Weight 66 g
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VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 3Document Number: 94468
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Output Characteristics
Fig. 2 - Maximum Collector Current vs. Case Temperature
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 4 - Typical Gate Charge vs.
Gate to Emitter Votlage
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
IC - Collector to Emitter Current (A)
VCE - Collector to Emitter Voltage (V)
1.0 10
0.1
VGE = 15 V
20 μs pulse width
TJ = 150 °C
TJ = 25 °C
1
10
100
94468_01
Maximum DC Collector Current (A)
TC - Case Temperature (°C)
50 75 100 125 150
25
0
40
60
80
20
120
100
94468_02
VCE - Typical Collector to Emitter
Voltage (V)
TJ - Junction Temperature (°C)
40 60 80 100 120 140 160
20
IC = 100 A
IC = 50 A
IC = 20 A
1.0
2.0
1.5
3.0
2.5
94468_03
V
GE
- Gate to Emitter Voltage (V)
O
G
- Typical Gate Charge (nC)
100 200 300 400
0
VCC = 400 V
IC = 52 A
0
4
8
12
20
16
94468_04
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.8 1.2 1.6 2.0 2.4
0.4
1
10
100
94468_05
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
trr (ns)
dIF/dt (A/µs)
1000
100
VR = 200 V
IF = 50 A, TJ = 125 °C
IF = 50 A, TJ = 25 °C
60
80
100
160
120
140
94468_06
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VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 4Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Reverse Recovery Current vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 9 - Functional Diagram
Fig. 10 - Electrical Diagram
ORDERING INFORMATION TABLE
I
RRM
(A)
dI
F
/dt (A/µs)
1000
100
VR = 200 V
IF = 50 A, TJ = 125 °C
IF = 50 A, TJ = 25 °C
1
10
100
94468_07
Qrr (nC)
dIF/dt (A/μs)
100
94468_08
1000
0
2000
1000
1500
500
VR = 200 V
IF = 50 A, TJ = 25 °C
IF = 50 A, TJ = 125 °C
3, 4
11
12
5, 6
9
10
7, 8
Thermistor
option
T
2
R
1
3, 4
11
12
5, 6
9
10 Ω
7, 8
10 Ω
10 Ω
10
10 Ω
VISHAY. DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemusnauom www.v\shay.com/doc?91000
VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 5Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95175
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Outline Dimensions
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Revision: 01-Jul-15 1Document Number: 95175
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MTP
DIMENSIONS in millimeters
Note
• Unused terminals are not assembled in the package
Ø 2.1 (x 4)
Pins position
with tolerance
R 2.6 (x 2)
Dia. 5 (x 4)
0.6
z detail
Use self tapping screw
or M 2.5 x X
e.g. M 2.5 x 6 or M 2.5 x 8
according to PCB
thickness used
12 ± 0.3 12 ± 0.339.5 ± 0.3
45 ± 0.1
7.4
1.3 48.7 ± 0.3
63.5 ± 0.15
0.8 Ra
33.2 ± 0.3
31.8 ± 0.15
27.5 ± 0.3
3.0
2.1
Ø 1.1 ± 0.025
19.8 ± 0.1
45°
2.5 ± 0.1
16 ± 0.3
1.5
5
5.2
5.4
22.7
14.7
15
12 9
4.2 6
1.2
11.5 14.7
6
3
65
13
9
87 43 2
1
10 11 12
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