VS-50MT060WHTAPBF Datasheet by Vishay General Semiconductor - Diodes Division

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VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 1Document Number: 94468
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“Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A
FEATURES
Gen 4 warp speed IGBT technology
•HEXFRED
® antiparallel diodes with ultrasoft
reverse recovery
Very low conduction and switching losses
Optional SMD thermistor (NTC)
Very low junction to case thermal resistance
UL approved file E78996
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
Optimized for welding, UPS and SMPS applications
Low EMI, requires less snubbing
Direct mounting to heatsink
PCB solderable terminals
Very low stray inductance design for high speed operation
PRIMARY CHARACTERISTICS
VCES 600 V
VCE(on) typical at VGE = 15 V 2.3 V
IC at TC = 25 °C 114 A
Speed 30 kHz to 100 kHz
Package MTP
Circuit configuration Half bridge
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current IC
TC = 25 °C 114
A
TC = 109 °C 50
Pulsed collector current ICM 350
Peak switching current ILM 350
Diode continuous forward current IFTC = 109 °C 34
Peak diode forward current IFM 200
Gate to emitter voltage VGE ± 20 V
RMS isolation voltage VISOL Any terminal to case, t = 1 min 2500
Maximum power dissipation PD
TC = 25 °C 658 W
TC = 100 °C 263
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 500 μA 600 - - V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 50 A - 2.3 3.15
V
VGE = 15 V, IC = 100 A - 2.5 3.2
VGE = 15 V, IC = 50 A, TJ = 150 °C - 1.72 2.17
Gate threshold voltage VGE(th) IC = 0.5 mA 3 - 6
Collector to emitter leaking current ICES
VGE = 0 V, IC = 600 A - - 0.4 mA
VGE = 0 V, IC = 600 A, TJ = 150 °C - - 10
Diode forward voltage drop VFM
IF = 50 A, VGE = 0 V - 1.58 1.80
VIF = 50 A, VGE = 0 V, TJ = 150 °C - 1.49 1.68
IF = 100 A, VGE = 0 V, TJ = 25 °C - 1.9 2.17
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA
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VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 2Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
(1) T0, T1 are thermistor´s temperatures
(2) , temperature in Kelvin
Note
(1) Standard version only i.e. without optional thermistor
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) QgIC = 52 A
VCC = 400 V
VGE = 15 V
- 331 385
nCGate to emitter charge (turn-on) Qge -4452
Gate to collector charge (turn-on) Qgc - 133 176
Turn-on switching loss Eon Internal gate resistors (see electrical diagram)
IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, TJ = 25 °C
-0.26-
mJ
Turn-off switching loss Eoff -1.2-
Total switching loss Ets -1.46-
Turn-on switching loss Eon Internal gate resistors (see electrical diagram)
IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, TJ = 150 °C
-0.73-
mJ
Turn-off switching loss Eoff -1.66-
Total switching loss Ets -2.39-
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1.0 MHz
- 7100 -
pFOutput capacitance Coes - 510 -
Reverse transfer capacitance Cres - 140 -
Diode reverse recovery time trr VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
-8297ns
Diode peak reverse current Irr - 8.3 10.6 A
Diode recovery charge Qrr - 340 514 nC
Diode reverse recovery time trr VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
TJ = 125 °C
- 137 153 ns
Diode peak reverse current Irr - 12.7 14.8 A
Diode recovery charge Qrr - 870 1132 nC
THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R0 (1) T0 = 25 °C - 30 - k
Sensitivity index of the
thermistor material (1)(2) T0 = 25 °C
T1 = 85 °C - 4000 - K
R0
R1
-------1
T0
------ 1
T1
------


exp=
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction
temperature range
IGBT, diode TJ
-40 - 150
°CThermistor -40 - 125
Storage temperature range TStg -40 - 125
Junction to case IGBT RthJC
- - 0.38
°C/WDiode - - 0.8
Case to sink per module RthCS Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance (1) External shortest distance in air between 2 terminals 5.5 - -
mm
Creepage (1) Shortest distance along the external surface of the
insulating material between 2 terminals 8--
Mounting torque to heatsink
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 % Nm
Weight 66 g
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VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 3Document Number: 94468
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Maximum Collector Current vs. Case Temperature
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 4 - Typical Gate Charge vs.
Gate to Emitter Votlage
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
IC - Collector to Emitter Current (A)
VCE - Collector to Emitter Voltage (V)
1.0 10
0.1
VGE = 15 V
20 μs pulse width
TJ = 150 °C
TJ = 25 °C
1
10
100
94468_01
Maximum DC Collector Current (A)
TC - Case Temperature (°C)
50 75 100 125 150
25
0
40
60
80
20
120
100
94468_02
VCE - Typical Collector to Emitter
Voltage (V)
TJ - Junction Temperature (°C)
40 60 80 100 120 140 160
20
IC = 100 A
IC = 50 A
IC = 20 A
1.0
2.0
1.5
3.0
2.5
94468_03
V
GE
- Gate to Emitter Voltage (V)
O
G
- Typical Gate Charge (nC)
100 200 300 400
0
VCC = 400 V
IC = 52 A
0
4
8
12
20
16
94468_04
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.8 1.2 1.6 2.0 2.4
0.4
1
10
100
94468_05
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
trr (ns)
dIF/dt (A/µs)
1000
100
VR = 200 V
IF = 50 A, TJ = 125 °C
IF = 50 A, TJ = 25 °C
60
80
100
160
120
140
94468_06
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VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 4Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Reverse Recovery Current vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 9 - Functional Diagram
Fig. 10 - Electrical Diagram
ORDERING INFORMATION TABLE
I
RRM
(A)
dI
F
/dt (A/µs)
1000
100
VR = 200 V
IF = 50 A, TJ = 125 °C
IF = 50 A, TJ = 25 °C
1
10
100
94468_07
Qrr (nC)
dIF/dt (A/μs)
100
94468_08
1000
0
2000
1000
1500
500
VR = 200 V
IF = 50 A, TJ = 25 °C
IF = 50 A, TJ = 125 °C
3, 4
11
12
5, 6
9
10
7, 8
Thermistor
option
T
2
R
1
3, 4
11
12
5, 6
9
10 Ω
7, 8
10 Ω
10 Ω
10
10 Ω
VISHAY. DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemusnauom www.v\shay.com/doc?91000
VS-50MT060WHTAPbF
www.vishay.com Vishay Semiconductors
Revision: 09-Oct-17 5Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95175
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Outline Dimensions
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Revision: 01-Jul-15 1Document Number: 95175
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MTP
DIMENSIONS in millimeters
Note
Unused terminals are not assembled in the package
Ø 2.1 (x 4)
Pins position
with tolerance
R 2.6 (x 2)
Dia. 5 (x 4)
0.6
z detail
Use self tapping screw
or M 2.5 x X
e.g. M 2.5 x 6 or M 2.5 x 8
according to PCB
thickness used
12 ± 0.3 12 ± 0.339.5 ± 0.3
45 ± 0.1
7.4
1.3 48.7 ± 0.3
63.5 ± 0.15
0.8 Ra
33.2 ± 0.3
31.8 ± 0.15
27.5 ± 0.3
3.0
2.1
Ø 1.1 ± 0.025
19.8 ± 0.1
45°
2.5 ± 0.1
16 ± 0.3
1.5
5
5.2
5.4
22.7
14.7
15
12 9
4.2 6
1.2
11.5 14.7
6
3
65
13
9
87 43 2
1
10 11 12
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