BFU550X Datasheet by NXP USA Inc.

d» |
BFU550X
NPN wideband silicon RF transistor
Rev. 2 — 12 April 2019 Product data sheet
S
O
T
1
4
3
B
1 Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-
emitter SOT143B package.
The BFU550X is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
•Low noise, high breakdown RF transistor
•AEC-Q101 qualified
•Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
•Maximum stable gain 21.5 dB at 900 MHz
•11 GHz fT silicon technology
1.3 Applications
•Applications requiring high supply voltages and high breakdown voltages
•Broadband amplifiers up to 2 GHz
•Low noise amplifiers for ISM applications
•ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
VCB collector-base voltage open emitter - - 24 V
open base - - 12 VVCE collector-emitter voltage
shorted base - - 24 V
VEB emitter-base voltage open collector - - 2 V
ICcollector current - 15 50 mA
Ptot total power dissipation Tsp ≤ 87 °C [1] - - 450 mW
hFE DC current gain IC = 15 mA; VCE = 8 V 60 95 200
Cccollector capacitance VCB = 8 V; f = 1 MHz - 0.72 - pF
fTtransition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz - 11 - GHz
BFU550X Table 2. Discrete pinning Table 3. Ordering information Table 4. Marking
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
2 / 21
Symbol Parameter Conditions Min Typ Max Unit
Gp(max) maximum power gain IC = 15 mA; VCE = 8 V; f = 900 MHz [2] - 21.5 - dB
NFmin minimum noise figure IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt - 0.75 - dB
PL(1dB) output power at 1 dB gain
compression
IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900
MHz
- 13.5 - dBm
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.
2 Pinning information
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1 collector
2 emitter
3 base
4 emitter
21
34
aaa-010457
1
2, 4
3
3 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BFU550X - plastic surface-mounted package; 4 leads SOT143B
OM7963 - Customer evaluation kit for BFU520X, BFU530X and BFU550X [1] -
[1] The customer evaluation kit contains the following:
•Unpopulated RF amplifier Printed-Circuit Board (PCB)
–Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
– Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
– BFU520X, BFU530X and BFU550X samples
– USB stick with data sheets, application notes, models, S-parameter and
noise files
4 Marking
Table 4. Marking
Type number Marking Description
* = t : made in MalaysiaBFU550X *TG
* = w : made in China
BFU550X http://www. nxp.cam Section 3 Secfion 10 Section 10.1 Secfion 10.2 Table 7. Characteristics
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
3 / 21
5 Design support
Table 5. Available design support
Download from the BFU550X product information page on http://www.nxp.com.
Support item Available Remarks
Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.
SPICE model yes Based on Gummel-Poon device
model.
S-parameters yes
Noise parameters yes
Customer evaluation kit yes See Section 3 and Section 10.
Solder pattern yes
Application notes yes See Section 10.1 and Section 10.2.
6 Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCB collector-base voltage open emitter - 30 V
open base - 16 VVCE collector-emitter voltage
shorted base - 30 V
VEB emitter-base voltage open collector - 3 V
ICcollector current - 80 mA
Tstg storage temperature -65 +150 °C
Human Body Model (HBM) According to JEDEC
standard 22-A114E
- ±150 VVESD electrostatic discharge voltage
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
- ±2 kV
7 Recommended operating conditions
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VCB collector-base voltage open emitter - - 24 V
open base - - 12 VVCE collector-emitter voltage
shorted base - - 24 V
VEB emitter-base voltage open collector - - 2 V
ICcollector current - - 50 mA
Piinput power ZS = 50 Ω - - 10 dBm
Tjjunction temperature -40 - +150 °C
BFU550X Table 8. Thermal characteristics sue—0112453
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
4 / 21
Symbol Parameter Conditions Min Typ Max Unit
Ptot total power dissipation Tsp ≤ 87 °C [1] - - 450 mW
[1] Tsp is the temperature at the solder point of the controller lead.
8 Thermal characteristics
Table 8. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to solder point [1] 140 K/W
[1] Tsp is the temperature at the solder point of the collector lead.
Tsp has the following relation to the ambient temperature Tamb:
Tsp = Tamb + P × Rth(sp-a)
With P being the power dissipation and Rth(sp-a) being the thermal resistance between
the solder point and ambient. Rth(sp-a) is determined by the heat transfer properties in the
application.
The heat transfer properties are set by the application board materials, the board layout
and the environment e.g. housing.
Figure 1. Power derating curve
9 Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base breakdown voltage IC = 100 nA; IE = 0 mA 24 - - V
V(BR)CEO collector-emitter breakdown voltage IC = 150 nA; IB = 0 mA 12 - - V
ICcollector current - 15 50 mA
ICBO collector-base cut-off current IE = 0 mA; VCB = 8 V - <1 - nA
BFU550X
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
5 / 21
Symbol Parameter Conditions Min Typ Max Unit
hFE DC current gain IC = 15 mA; VCE = 8 V 60 95 200
Ceemitter capacitance VEB = 0.5 V; f = 1 MHz - 1.11 - pF
Cre feedback capacitance VCE = 8 V; f = 1 MHz - 0.41 - pF
Cccollector capacitance VCB = 8 V; f = 1 MHz - 0.72 - pF
fTtransition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz - 11 - GHz
f = 433 MHz; VCE = 8 V [1]
IC = 1 mA - 15 - dB
IC = 15 mA - 25.5 - dB
IC = 25 mA - 26.5 - dB
f = 900 MHz; VCE = 8 V [1]
IC = 1 mA - 12 - dB
IC = 15 mA - 21.5 - dB
IC = 25 mA - 22 - dB
f = 1800 MHz; VCE = 8 V [1]
IC = 1 mA - 10 - dB
IC = 15 mA - 16 - dB
Gp(max) maximum power gain
IC = 25 mA - 15.5 - dB
f = 433 MHz; VCE = 8 V
IC = 1 mA - 10 - dB
IC = 15 mA - 23.5 - dB
IC = 25 mA - 24 - dB
f = 900 MHz; VCE = 8 V
IC = 1 mA - 8 - dB
IC = 15 mA - 17.5 - dB
IC = 25 mA - 18 - dB
f = 1800 MHz; VCE = 8 V
IC = 1 mA - 4.5 - dB
IC = 15 mA - 12 - dB
|s21|2insertion power gain
IC = 25 mA - 12 - dB
f = 433 MHz; VCE = 8 V; ΓS = Γopt
IC = 1 mA - 0.6 - dB
IC = 15 mA - 0.9 - dB
IC = 25 mA - 1.1 - dB
f = 900 MHz; VCE = 8 V; ΓS = Γopt
IC = 1 mA - 0.75 - dB
IC = 15 mA - 1 - dB
NFmin minimum noise figure
IC = 25 mA - 1.2 - dB
BFU550X
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
6 / 21
Symbol Parameter Conditions Min Typ Max Unit
f = 1800 MHz; VCE = 8 V; ΓS = Γopt
IC = 1 mA - 1 - dB
IC = 15 mA - 1.1 - dB
IC = 25 mA - 1.3 - dB
f = 433 MHz; VCE = 8 V; ΓS = Γopt
IC = 1 mA - 22.5 - dB
IC = 15 mA - 25 - dB
IC = 25 mA - 25.5 - dB
f = 900 MHz; VCE = 8 V; ΓS = Γopt
IC = 1 mA - 15 - dB
IC = 15 mA - 19 - dB
IC = 25 mA - 19.5 - dB
f = 1800 MHz; VCE = 8 V; ΓS = Γopt
IC = 1 mA - 9.5 - dB
IC = 15 mA - 13.5 - dB
Gass associated gain
IC = 25 mA - 14 - dB
f = 433 MHz; VCE = 8 V; ZS = ZL = 50 Ω
IC = 15 mA - 9.5 - dBm
IC = 25 mA - 13 - dBm
f = 900 MHz; VCE = 8 V; ZS = ZL = 50 Ω
IC = 15 mA - 10 - dBm
IC = 25 mA - 13.5 - dBm
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50 Ω
IC = 15 mA - 10 - dBm
PL(1dB) output power at 1 dB gain compression
IC = 25 mA - 13.5 - dBm
f1 = 433 MHz; f2 = 434 MHz; VCE = 8 V;
ZS = ZL = 50 Ω
IC = 15 mA - 19 - dBm
IC = 25 mA - 22.5 - dBm
f1 = 900 MHz; f2 = 901 MHz; VCE = 8 V;
ZS = ZL = 50 Ω
IC = 15 mA - 20 - dBm
IC = 25 mA - 23 - dBm
f1 = 1800 MHz; f2 = 1801 MHz; VCE = 8
V; ZS = ZL = 50 Ω
IC = 15 mA - 19.5 - dBm
IP3ooutput third-order intercept point
IC = 25 mA - 23 - dBm
[1] If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.
BFU550X ass-011513 “5.011614
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
7 / 21
9.1 Graphs
Tamb = 25 °C.
1. IB = 25 μA
2. IB = 75 μA
3. IB = 125 μA
4. IB = 175 μA
5. IB = 225 μA
6. IB = 275 μA
7. IB = 325 μA
Figure 2. Collector current as a function of collector-emitter voltage; typical values
Tamb = 25 °C.
1. VCE = 3.0 V
2. VCE = 8.0 V
Figure 3. DC current gain as function of collector
current; typical values
VCE = 8 V.
1. Tamb = -40 °C
2. Tamb = +25 °C
3. Tamb = +125 °C
Figure 4. DC current gain as function of collector
current; typical values
3557011616 55570111513 5557011619
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
8 / 21
Tamb = 25 °C.
1. VCE = 3.0 V
2. VCE = 8.0 V
Figure 5. Collector current as a function of base-emitter
voltage; typical values
Tamb = 25 °C.
1. VCE = 3.0 V
2. VCE = 8.0 V
Figure 6. Base current as a function of base-emitter
voltage; typical values
VCE = 3 V.
1. Tamb = -40 °C
2. Tamb = +25 °C
3. Tamb = +125 °C
Figure 7. Reverse base current as a function of emitter-
base voltage; typical values
IC = 0 mA; f = 1 MHz; Tamb = 25 °C.
Figure 8. Collector capacitance as a function of
collector-base voltage; typical values
/\ /// \\ BFU550X
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
9 / 21
Tamb = 25 °C.
1. VCE = 3.3 V
2. VCE = 5.0 V
3. VCE = 8.0 V
4. VCE = 12.0 V
Figure 9. Transition frequency as a function of collector current; typical values
IC = 15 mA; VCE = 8 V; Tamb = 25 °C.
Figure 10. Gain as a function of frequency; typical
values
IC = 25 mA; VCE = 8 V; Tamb = 25 °C.
Figure 11. Gain as a function of frequency; typical
values
BFU550X 5337011624 3537011523 5.3541 1526 5.3541 1525
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
10 / 21
VCE = 8 V; Tamb = 25 °C.
1. f = 300 MHz
2. f = 433 MHz
3. f = 800 MHz
4. f = 900 MHz
5. f = 1800 MHz
Figure 12. Insertion power gain as a function of
collector current; typical values
VCE = 8 V; Tamb = 25 °C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
1. f = 300 MHz
2. f = 433 MHz
3. f = 800 MHz
4. f = 900 MHz
5. f = 1800 MHz
Figure 13. Maximum power gain as a function of
collector current; typical values
IC = 25 mA; Tamb = 25 °C.
1. f = 300 MHz
2. f = 433 MHz
3. f = 800 MHz
4. f = 900 MHz
5. f = 1800 MHz
Figure 14. Insertion power gain as a function of
collector-emitter voltage; typical values
IC = 25 mA; Tamb = 25 °C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
1. f = 300 MHz
2. f = 433 MHz
3. f = 800 MHz
4. f = 900 MHz
5. f = 1800 MHz
Figure 15. Maximum power gain as a function of
collector-emitter voltage; typical values
BFU550X
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
11 / 21
0.2 0.5 1 2 5 10
0.2
0.5
1
2
5
10
-0.2
-0.5
-1
-2
-5
-10
0.0 ∞
aaa-011627
(1)(1)
(2)(2)
VCE = 8 V; 40 MHz ≤ f ≤ 3 GHz.
1. IC = 15 mA
2. IC = 25 mA
Figure 16. Input reflection coefficient (s11); typical values
0.2 0.5 1 2 5 10
0.2
0.5
1
2
5
10
-0.2
-0.5
-1
-2
-5
-10
0.0 ∞
aaa-011628
(1)(1)
(2)(2)
VCE = 8 V; 40 MHz ≤ f ≤ 3 GHz.
1. IC = 15 mA
2. IC = 25 mA
Figure 17. Output reflection coefficient (s22); typical values
BFU550X 3557011529 3557011530 3557011531 3557011532
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
12 / 21
VCE = 8 V; Tamb = 25 °C.
1. f1 = 433 MHz; f2 = 434 MHz
2. f1 = 900 MHz; f2 = 901 MHz
3. f1 = 1800 MHz; f2 = 1801 MHz
Figure 18. Output third-order intercept point as a
function of collector current; typical values
VCE = 8 V; Tamb = 25 °C.
1. f = 433 MHz
2. f = 900 MHz
3. f = 1800 MHz
Figure 19. Output power at 1 dB gain compression as a
function of collector current; typical values
IC = 25 mA; Tamb = 25 °C.
1. f1 = 433 MHz; f2 = 434 MHz
2. f1 = 900 MHz; f2 = 901 MHz
3. f1 = 1800 MHz; f2 = 1801 MHz
Figure 20. Output third-order intercept point as a
function of collector-emitter voltage; typical values
IC = 25 mA; Tamb = 25 °C.
1. f = 433 MHz
2. f = 900 MHz
3. f = 1800 MHz
Figure 21. Output power at 1 dB gain compression as a
function of collector-emitter voltage; typical values
BFU550X 5337011634 3537011533 \\
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
13 / 21
VCE = 8 V; Tamb = 25 °C; ΓS = Γopt.
1. f = 433 MHz
2. f = 900 MHz
3. f = 1800 MHz
Figure 22. Minimum noise figure as a function of
collector current; typical values
VCE = 8 V; Tamb = 25 °C; ΓS = Γopt.
1. IC = 1 mA
2. IC = 2 mA
3. IC = 3 mA
4. IC = 5 mA
5. IC = 10 mA
6. IC = 15 mA
7. IC = 25 mA
8. IC = 35 mA
Figure 23. Minimum noise figure as a function of
frequency; typical values
BFU550X
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
14 / 21
0.2 0.5 1 2 5 10
0.2
0.5
1
2
5
10
-0.2
-0.5
-1
-2
-5
-10
0.0 ∞
aaa-011635
(1)(1)
(2)(2)
(3)(3)
(4)(4) (5)(5)
(6)(6)
(7)(7)
(8)(8)
VCE = 8 V; 400 MHz ≤ f ≤ 2 GHz.
1. IC = 1 mA
2. IC = 2 mA
3. IC = 3 mA
4. IC = 5 mA
5. IC = 10 mA
6. IC = 15 mA
7. IC = 25 mA
8. IC = 35 mA
Figure 24. Optimum reflection coefficient (Γopt); typical values
BFU550X mation about the following a Section 5 "Design support" The following application exampl Semion 3 "Ordering information" The following application ex Semion 5 "Design support" v caav 41H 41H 41H 41H m I mummy
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
15 / 21
10 Application information
More information about the following application example can be found in the application
notes. See Section 5 "Design support".
The following application example can be implemented using the evaluation kit. See
Section 3 "Ordering information" for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 "Design support".
10.1 Application example: 433 ISM band LNA
433 ISM band LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11437.
aaa-010449
5.6 Ω
22 Ω
15 pF
56 pF
220 pF
1 µF
VCC 3.6 V
10 nF
220 pF
4.7 pF
RF input
(SMA)
RF output
(SMA)
10 kΩ
12 nH
Murata
LQW series
15 nH
Murata
LQW series
DUT
Figure 25. Schematic 433 MHz ISM band LNA
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 10. Application performance data at 433 MHz
ICC = 20 mA; VCC = 3.6 V
Symbol Parameter Conditions Min Typ Max Unit
|s21|2insertion power gain - 21 - dB
NF noise figure - 1.3 - dB
IP3ooutput third-order
intercept point
f1 = 433.1 MHz; f2 = 433.2 MHz;
Pi = -30 dBm per carrier
- 19 - dBm
BFU550X 3534715454
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
16 / 21
10.2 Application example: 866 ISM band LNA
866 ISM band LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11438.
aaa-010454
10 Ω
22 Ω
47 pF 82 pF
8.2 pF
220 pF
5.6 nF
VCC 3.6 V
3.9 nF
220 pF
1.5 pF
RF input
(SMA)
RF output
(SMA)
10 kΩ
8.2 nH
Murata
LQW series
10 nH
Murata
LQW series
DUT
Figure 26. Schematic 866 MHz ISM band LNA
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 11. Application performance data at 866 MHz
ICC = 20 mA; VCC = 3.6 V
Symbol Parameter Conditions Min Typ Max Unit
|s21|2insertion power gain - 15 - dB
NF noise figure - 1.4 - dB
IP3ooutput third-order
intercept point
f1 = 866.1 MHz; f2 = 866.2 MHz;
Pi = -30 dBm per carrier
- 19 - dBm
BFU550X Plastic surface-mounted package; 4 leads SOT143 B IKEI E-I EL©
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
17 / 21
11 Package outline
UNIT A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1
0.45
0.15
0.55
0.45
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B 04-11-16
06-03-16
0 1 2 mm
scale
Plastic surface-mounted package; 4 leads SOT143B
D
HE
E A
B
vMA
X
A
A1
Lp
Q
detail X
c
y
wM
e1
e
B
21
34
b1
bp
Figure 27. Package outline SOT143B
BFU550X Table 12. Abbreviations Table 13. Revision history
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
18 / 21
12 Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,
JESD625-A or equivalent standards.
13 Abbreviations
Table 12. Abbreviations
Acronym Description
AEC automotive electronics council
ISM industrial, scientific, and medical
LNA low-noise amplifier
MSG maximum stable gain
NPN negative-positive-negative
SMA SubMiniature version A
14 Revision history
Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU550X v.2 20190412 Product data sheet - BFU550X v.1
modification •Adapted Schematic 866 MHz ISM band LNA. Biasing on the schematic is adapted according
the EVB to do the RF/DC. Connection of 10 K resistor moved to the other side of the 82 pF
capacitor
BFU550X v.1 20140305 Product data sheet - -
BFU550X incs nus dacumem w hmzllwwmxgmm
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
19 / 21
15 Legal information
15.1 Data sheet status
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product
development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. NXP Semiconductors
takes no responsibility for the content in this document if provided by an
information source outside of NXP Semiconductors. In no event shall NXP
Semiconductors be liable for any indirect, incidental, punitive, special or
consequential damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the removal or replacement
of any products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any other
legal theory. Notwithstanding any damages that customer might incur for
any reason whatsoever, NXP Semiconductors’ aggregate and cumulative
liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable
for the specified use without further testing or modification. Customers
are responsible for the design and operation of their applications and
products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications
and products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with
their applications and products. NXP Semiconductors does not accept any
liability related to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using NXP Semiconductors products in order to avoid a
default of the applications and the products or of the application or use by
customer’s third party customer(s). NXP does not accept any liability in this
respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
BFU550X
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
BFU550X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 2 — 12 April 2019
20 / 21
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BFU550X
NXP Semiconductors BFU550X
NPN wideband silicon RF transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2019. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 April 2019
Document identifier: BFU550X
Contents
1 Product profile .................................................... 1
1.1 General description ............................................1
1.2 Features and benefits ........................................1
1.3 Applications ........................................................1
1.4 Quick reference data ......................................... 1
2 Pinning information ............................................ 2
3 Ordering information .......................................... 2
4 Marking .................................................................2
5 Design support ....................................................3
6 Limiting values ....................................................3
7 Recommended operating conditions ................ 3
8 Thermal characteristics ......................................4
9 Characteristics .................................................... 4
9.1 Graphs ............................................................... 7
10 Application information .................................... 15
10.1 Application example: 433 ISM band LNA ........ 15
10.2 Application example: 866 ISM band LNA ........ 16
11 Package outline .................................................17
12 Handling information ........................................ 18
13 Abbreviations .................................................... 18
14 Revision history ................................................ 18
15 Legal information .............................................. 19