BZT52-G Series Datasheet by Vishay General Semiconductor - Diodes Division

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BZT52-G-Series
www.vishay.com Vishay Semiconductors
Rev. 1.3, 22-Feb-18 1Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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Small Signal Zener Diodes
DESIGN SUPPORT TOOLS
FEATURES
Silicon planar power Zener diodes
• The Zener voltages are graded according to
the international E24 standard
AEC-Q101 qualified available
(part number on request)
ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
Base P/N-G3 - green, commercial grade
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 2.4 to 75 V
Test current IZT 2.5; 5 mA
VZ specification Pulse current
Circuit configuration Single
click logo to get started
Available
Models
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZT52-G-series
BZT52C2V4-G3-08 to BZT52C75-G3-08
3000 (8 mm tape on 7" reel) 15 000/box
BZT52B2V4-G3-08 to BZT52B75-G3-08
BZT52C2V4-G3-18 to BZT52C75-G3-18
10 000 (8 mm tape on 13" reel) 10 000/box
BZT52B2V4-G3-18 to BZT52B75-G3-18
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL SOLDERING CONDITIONS
SOD-123 9.4 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
Diode on ceramic substrate 0.7 mm;
5 mm2 pad areas Ptot 500 mW
Diode on ceramic substrate 0.7 mm;
2.5 mm2 pad areas Ptot 410 mW
Zener current See Table “Electrical Characteristics”
Thermal resistance junction to ambient air Valid provided that electrodes are kept at
ambient temperature RthJA 300 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +150 °C
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BZT52-G-Series
www.vishay.com Vishay Semiconductors
Rev. 1.3, 22-Feb-18 2Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•I
ZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses tp = 5 ms
(2) IZT1 = 2.5 mA
(3) IZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSIBLE
ZENER
CURRENT (4)
VZ at IZT1 IZT1 IZT2 VR at IRZZ at IZT1 ZZK at IZT2 VZ
IZ at
Tamb =
45 °C
IZ at
Tamb =
25 °C
VmA VnA 10-4/°C mA
MIN. NOM. MAX.
BZT52C2V4-G
Y1 2.2 2.4 2.6 5 1 - 100 85 600 -9 to -4 - -
BZT52C2V7-G
Y2 2.5 2.7 2.9 5 1 - 100 75 (< 83) < 500 -9 to -4 113 134
BZT52C3V0-G
Y3 2.8 3.0 3.2 5 1 - 100 80 (< 95) < 500 -9 to -3 98 118
BZT52C3V3-G
Y4 3.1 3.3 3.5 5 1 - 100 80 (< 95) < 500 -8 to -3 92 109
BZT52C3V6-G
Y5 3.4 3.6 3.8 5 1 - 100 80 (< 95) < 500 -8 to -3 85 100
BZT52C3V9-G
Y6 3.7 3.9 4.1 5 1 - 100 80 (< 95) < 500 -7 to -3 77 92
BZT52C4V3-G
Y7 4 4.3 4.6 5 1 - 100 80 (< 95) < 500 -6 to -1 71 84
BZT52C4V7-G
Y8 4.4 4.7 5 5 1 - 100 70 (< 78) < 500 -5 to +2 64 76
BZT52C5V1-G
Y9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67
BZT52C5V6-G
YA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59
BZT52C6V2-G
YB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54
BZT52C6V8-G
YC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49
BZT52C7V5-G
YD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44
BZT52C8V2-G
YE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40
BZT52C9V1-G
YF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36
BZT52C10-G
YG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33
BZT52C11-G
YH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30
BZT52C12-G
YI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28
BZT52C13-G
YK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25
BZT52C15-G
YL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23
BZT52C16-G
YM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20
BZT52C18-G
YN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18
BZT52C20-G
YO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17
BZT52C22-G
YP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16
BZT52C24-G
YR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13
BZT52C27-G
YS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12
BZT52C30-G
YT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10
BZT52C33-G
YU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9
BZT52C36-G
YW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9
BZT52C39-G
YX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8
BZT52C43-G
YY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7
BZT52C47-G
YZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6
BZT52C51-G
Z1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6
BZT52C56-G
Z2 52 56 60 2.5 1 - 100 < 135 (2) < 1000 (3) typ. +10 (2) --
BZT52C62-G
Z3 58 62 66 2.5 1 - 100 < 150 (2) < 1000 (3) typ. +10 (2) --
BZT52C68-G
Z4 64 68 72 2.5 1 - 100 < 200 (2) < 1000 (3) typ. +10 (2) --
BZT52C75-G
Z5 70 75 79 2.5 1 - 100 < 250 (2) < 1000 (3) typ. +10 (2) --
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BZT52-G-Series
www.vishay.com Vishay Semiconductors
Rev. 1.3, 22-Feb-18 3Document Number: 83340
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•I
ZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses tp = 5 ms
(2) IZT1 = 2.5 mA
(3) IZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSIBLE
ZENER
CURRENT (4)
VZ at IZT1 IZT1 IZT2 VR at IRZZ at IZT1 ZZK at IZT2 VZ
IZ at
Tamb =
45 °C
IZ at
Tamb =
25 °C
VmA VnA 10-4/°C mA
MIN. NOM. MAX.
BZT52B2V4-G
V1 2.35 2.4 2.45 5 1 - 100 85 600 -9 to -4 - -
BZT52B2V7-G
V2 2.65 2.7 2.75 5 1 - 100 75 (< 83) < 500 -9 to -4 113 134
BZT52B3V0-G
V3 2.94 3.0 3.06 5 1 - 100 80 (< 95) < 500 -9 to -3 98 118
BZT52B3V3-G
V4 3.23 3.3 3.37 5 1 - 100 80 (< 95) < 500 -8 to -3 92 109
BZT52B3V6-G
V5 3.53 3.6 3.67 5 1 - 100 80 (< 95) < 500 -8 to -3 85 100
BZT52B3V9-G
V6 3.82 3.9 3.98 5 1 - 100 80 (< 95) < 500 -7 to -3 77 92
BZT52B4V3-G
V7 4.21 4.3 4.39 5 1 - 100 80 (< 95) < 500 -6 to -1 71 84
BZT52B4V7-G
V8 4.61 4.7 4.79 5 1 - 100 70 (< 78) < 500 -5 to +2 64 76
BZT52B5V1-G
V9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67
BZT52B5V6-G
VA 5.49 5.6 5.71 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59
BZT52B6V2-G
VB 6.08 6.2 6.32 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54
BZT52B6V8-G
VC 6.66 6.8 6.94 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49
BZT52B7V5-G
VD 7.35 7.5 7.65 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44
BZT52B8V2-G
VE 8.04 8.2 8.36 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40
BZT52B9V1-G
VF 8.92 9.1 9.28 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36
BZT52B10-G
VG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33
BZT52B11-G
VH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30
BZT52B12-G
VI 11.8 12 12.2 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28
BZT52B13-G
VK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25
BZT52B15-G
VL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23
BZT52B16-G
VM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20
BZT52B18-G
VN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18
BZT52B20-G
VO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17
BZT52B22-G
VP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16
BZT52B24-G
VR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13
BZT52B27-G
VS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12
BZT52B30-G
VT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10
BZT52B33-G
VU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9
BZT52B36-G
VW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9
BZT52B39-G
VX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8
BZT52B43-G
VY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7
BZT52B47-G
VZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6
BZT52B51-G
U1 50 51 52 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6
BZT52B56-G
U2 54.9 56 57.1 2.5 1 - 100 < 135 (2) < 1000 (3) typ. +10 (2) --
BZT52B62-G
U3 60.8 62 63.2 2.5 1 - 100 < 150 (2) < 1000 (3) typ. +10 (2) --
BZT52B68-G
U4 66.6 68 69.4 2.5 1 - 100 < 200 (2) < 1000 (3) typ. +10 (2) --
BZT52B75-G
U5 73.5 75 76.5 2.5 1 - 100 < 250 (2)) < 1500 (3) typ. +10 (2) --
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Rev. 1.3, 22-Feb-18 4Document Number: 83340
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 4 - Dynamic Resistance vs. Zener Current
Fig. 5 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
18114
mA
103
102
10-1
10-2
10-3
10-4
10-5
10
1
I
F
V
F
0 0.2 0.4 0.6 0.8 1V
TJ = 100 °C
TJ = 25 °C
18888
500
400
300
200
100
0
mW
Ptot
200100C
Tamb
18117
1000
5
4
3
2
5
4
3
2
100
1
rzj
0.1 25 25110
IZ
TJ = 25 °C
2.7
5
4
3
2
10
25100 mA
3.6
4.7
5.1
5.6
Ω
18119
100
5
4
3
2
5
4
3
2
10
rzj
0.1 25 25110
IZ
1
25100 mA
Ω
TJ = 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
18120
103
7
5
4
3
2
7
5
4
3
2
10
Ω
0.1 2345 2345
110
mA
Rzj
IZ
Tj = 25 °C
47 + 51
43
39
36
102
18121
103
5
4
3
2
5
4
3
2
102
1
Rzth
5
4
3
2
10
Ω
12345 2345
10 100 V
VZ at IZ = 5 mA
negativepositive
Δ
Δ
VZ
Tj
Rzth = RthA x VZ x
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BZT52-G-Series
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Rev. 1.3, 22-Feb-18 5Document Number: 83340
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
18122
100
7
5
4
3
2
7
5
4
3
2
1
Ω
Rzj
10
Tj = 25 °C
IZ = 5 mA
12345 2345
10 100 V
VZ
18135
Δ
25
20
15
10
5
0
- 5
mV/°C
Δ
V
Z
T
j
12345 2345
10 100 V
V
Z
at I
Z
= 5 mA
V 27 V, I = 2 mA
5 mA
1 mA
20 mA
IZ =
18124
VZ at IZ = 5 mA
25 15
10
8
7
6.2
5.9
5.6
5.1
4.7
3.6
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 1
- 0.2
VZ
V
Tj
020406080
100 120 140 C
Δ
18136
Δ
100
80
60
40
20
0
mV/°C
Δ
VZ
Tj
020 40 80
60 100 V
VZ at IZ = 2 mA
I
Z
= 5 mA
18158
0 20 40 60 80 100 120 140 °C
9
8
7
6
5
4
3
2
1
0
- 1
V
V
Z
at I
Z
= 5 mA
I
Z
= 5 mA
ΔV
Z
T
j
51
43
36
V
18159
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
1 10 100 V
ΔVZ
VZ at IZ = 5 mA
ΔVZ = rZth x IZ
IZ = 5 mA
VZ >= 56 V; IZ = 2.5 mA
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BZT52-G-Series
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Rev. 1.3, 22-Feb-18 6Document Number: 83340
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Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 14 - Breakdown Characteristics
Fig. 15 - Breakdown Characteristics
Fig. 16 - Breakdown Characteristics
18111
Test
current
IZ 5 mA
123456789
0 10 V
VZ
3.3
3.9 5.6
2.7
mA
50
40
30
20
10
0
lZ
Tj = 25 °C
8.2
6.8
4.7
18112
10 20 30
0 40 V
V
Z
mA
30
20
10
0
l
Z
33
Test
current
I
Z
5 mA
T
j
= 25 °C
10
12
15
18
22
27
36
18157
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BZT52-G-Series
www.vishay.com Vishay Semiconductors
Rev. 1.3, 22-Feb-18 7Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
— VISHAY. V
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