BTN8982TA Datasheet by Infineon Technologies

L®
Automotive Power
Data Sheet
Rev. 1.0, 2013-05-17
BTN8982TA
High Current PN Half Bridge
NovalithIC™
o/_ Inflneon
Data Sheet 2 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Table of Contents
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3.1 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3.2 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3.3 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3.4 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.5 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.4.4 Status Flag Diagnosis with Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.1 Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.3 PWM Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table of Contents
(ifileon Am A / “gm; ®R°HS
PG-TO263-7-1
Type Package Marking
BTN8982TA PG-TO263-7-1 BTN8982TA
Data Sheet 3 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
NovalithIC™
BTN8982TA
1Overview
Features
• Path resistance of max. 20.4 mΩ @ 150 °C (typ. 10.0 mΩ @ 25 °C)
High Side: max. 10.5 mΩ @ 150 °C (typ. 5.3 mΩ @ 25 °C)
Low Side: max. 9.9 mΩ @ 150 °C (typ. 4.7 mΩ @ 25 °C)
• Enhanced switching speed for reduced switching losses
• Capable for high PWM frequency combined with active freewheeling
• Low quiescent current of typ. 7 μA @ 25 °C
• Switched mode current limitation for reduced power dissipation
in overcurrent
• Current limitation level of 55 A min.
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Operation up to 40V
• Green Product (RoHS compliant)
• AEC Qualified
Description
The BTN8982TA is an integrated high current half bridge for motor drive applications. It is part of the NovalithIC™
family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver
IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing
EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs,
diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature,
undervoltage, overcurrent and short circuit.
The BTN8982TA provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption.
Data Sheet 4 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Block Diagram
2 Block Diagram
The BTN8982TA is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming an integrated high
current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by
chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing
to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with
current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage,
overcurrent and short circuit. The BTN8982TA can be combined with other BTN8982TA to form H-bridge and 3-
phase drive configurations.
2.1 Block Diagram
Figure 1 Block Diagram
2.2 Terms
Following figure shows the terms used in this data sheet.
Figure 2 Terms
IS
SR
INH
IN
GND
OUT
VS
Gate Driver
HS
Slewrate
Adjustment
Digital Logic
Undervolt.
detection
Overtemp .
detection
Current
Limitation
LS
Current
Limitation
HS
Current
Sense
Gate Driver
LS
LS off HS off
I
IN
V
IN
OUT
I
INH
V
INH
V
SR
I
SR
V
IS
I
IS
V
S
I
OUT
, I
L
V
OUT
V
DS(HS)
GND
I
GND,
I
D(LS)
I
VS
, -I
D(HS)
IN
INH
SR
IS
VS
V
DS(LS)
@neon,
High Current PN Half Bridge
BTN8982TA
Pin Configuration
Data Sheet 5 Rev. 1.0, 2013-05-17
3 Pin Configuration
3.1 Pin Assignment
Figure 3 Pin Assignment BTN8982TA (top view)
3.2 Pin Definitions and Functions
Bold type: pin needs power wiring
Pin Symbol I/O Function
1GND -Ground
2 IN I Input
Defines whether high- or lowside switch is activated
3 INH I Inhibit
When set to low device goes in sleep mode
4,8 OUT O Power output of the bridge
5SR ISlew Rate
The slew rate of the power switches can be adjusted by connecting
a resistor between SR and GND
6 IS O Current Sense and Diagnostics
7 VS - Supply
1235
67
4
8
@neon,
Data Sheet 6 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
1) Not subject to production test, specified by design
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
Voltages
4.1.1 Supply Voltage VS-0.3 40 V –
4.1.2 Drain-Source Voltage High Side VDS(HS) -40 – V Tj ≥ 25°C
-38 – V Tj < 25°C
4.1.3 Drain-Source Voltage Low Side VDS(LS) –40VTj ≥ 25°C
–38V
Tj < 25°C
4.1.4 Logic Input Voltage VIN
VINH
-0.3 5.3 V –
4.1.5 Voltage at SR Pin VSR -0.3 1.0 V –
4.1.6 Voltage between VS and IS Pin VS -VIS -0.3 40 V –
4.1.7 Voltage at IS Pin VIS -20 40 V –
Currents
4.1.8 HS/LS Continuous Drain Current2)
2) Maximum reachable current may be smaller depending on current limitation level
ID(HS)
ID(LS)
-50 50 A TC < 85°C
switch active
-44 44 A TC < 125°C
switch active
4.1.9 HS/LS Pulsed Drain Current2) ID(HS)
ID(LS)
-117
-104
117
104
Atpulse = 10ms
single pulse
TC < 85°C
TC < 125°C
4.1.10 HS/LS PWM Current2) ID(HS)
ID(LS) -68
-60
68
60
A f = 1kHz, DC = 50%
TC < 85°C
TC < 125°C
-70
-62
70
62
A f = 20kHz, DC = 50%
TC < 85°C
TC < 125°C
Temperatures
4.1.11 Junction Temperature Tj-40 150 °C–
4.1.12 Storage Temperature Tstg -55 150 °C–
ESD Susceptibility
4.1.13 ESD Resistivity HBM
IN, INH, SR, IS
OUT, GND, VS
VESD
-2
-6
2
6
kV HBM3)
3) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001 (1,5kΩ, 100pF)
@neon,
High Current PN Half Bridge
BTN8982TA
General Product Characteristics
Data Sheet 7 Rev. 1.0, 2013-05-17
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Maximum Single Pulse Current
Figure 4 BTN8982TA Maximum Single Pulse Current (TC < 85°C)
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
4.2 Functional Range
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
4.2.1 Supply Voltage Range for
Normal Operation
VS(nor) 818V–
4.2.2 Extended Supply Voltage Range
for Operation
VS(ext) 5.5 40 V Parameter
Deviations possible
4.2.3 Junction Temperature Tj-40 150 °C–
0
10
20
30
40
50
60
70
80
90
100
110
120
1,0E-03 1,0E-02 1,0E-01 1,0E+00 1,0E+01
t
pulse
[s]
|I
max
| [A]
@180"
Data Sheet 8 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
General Product Characteristics
4.3 Thermal Resistance
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
4.3.1 Thermal Resistance
Junction-Case, High Side Switch
Rthjc(HS) = ΔTj(HS)/ Pv(HS)
RthJC(HS) – 0.55 0.8 K/W 1)
4.3.2 Thermal Resistance
Junction-Case, Low Side Switch
Rthjc(LS) = ΔTj(LS)/ Pv(LS)
RthJC(LS) – 1.1 1.6 K/W 1)
1) Not subject to production test, specified by design
4.3.3 Thermal Resistance
Junction-Ambient
RthJA –19–K/W
1) 2)
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
0/. @Ineon 26 24 22 20 13 16 14 12 10 0N>moo ~40 ~20 D 20 4D 60 30 100 I20 I40 160 4»
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
Data Sheet 9 Rev. 1.0, 2013-05-17
5 Block Description and Characteristics
5.1 Supply Characteristics
Figure 5 Typical Quiescent Current vs. Junction Temperature
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
General
5.1.1 Supply Current IVS(on) –2.23.3mAVINH = 5 V
VIN = 0 V or 5 V
RSR = 0 Ω
DC-mode
normal operation
(no fault condition)
5.1.2 Quiescent Current IVS(off) –713µAVINH = 0 V
VIN = 0 V or 5 V
Tj < 85 °C 1)
1) Not subject to production test, specified by design
––75µAVINH = 0 V
VIN = 0 V or 5 V
IVS(off) [µA]
T[°C]
Vs = 18V
Vs = 14V
Vs = 8V
0/. Inflneon 15 1e 15 , « 1 ~ . « . « 1 15 14 , , _ . . . . 14 13 . , . . . . . 13 12 _ V , . _ . _ 12 11 ~ , 1 ’ , » , » 1 11 10 1o - , 1 , 1 1 , 1 9 9 . , , _ a a \ 7 7 . 1 , ‘ 5 6 k V . 5 5 V V , 3 3 2 2 1 1 o o ‘ 5 7.5 10 12,5 15 17,5 20 22.5 25 27,5 30 5 75 10125 15175 20 2215 25 2715 30 4» 4»
Data Sheet 10 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
5.2 Power Stages
The power stages of the BTN8982TA consist of a p-channel vertical DMOS transistor for the high side switch and
a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in
a separate top chip. Both switches allow active freewheeling and thus minimizing power dissipation during PWM
control.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The
typical on state resistance characteristics are shown in Figure 6.
Figure 6 Typical ON State Resistance vs. Supply Voltage
Tj= 150°C
Tj= 25°C
Tj= -40°C
Low Side Switch
VS[V]
RON(LS) [mΩ]
@neon,
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
Data Sheet 11 Rev. 1.0, 2013-05-17
5.2.1 Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
High Side Switch - Static Characteristics
5.2.1 ON State High Side Resistance RON(HS)
–
–
5.3
8.0
–
10.5
mΩIOUT = 9 A; VS = 13.5 V
Tj = 25 °C; 1)
Tj = 150 °C
1) Not subject to production test, specified by design
–
–
7.5
10
–
15.2
mΩIOUT = 6 A; VS = 6 V
Tj = 25 °C; 1)
Tj = 150 °C
5.2.2 Leakage Current High Side IL(LKHS) ––2µAVINH = 0 V; VOUT = 0 V
Tj < 85 °C; 1)
–– 60µAVINH = 0 V; VOUT = 0 V
Tj = 150 °C
5.2.3 Reverse Diode Forward-Voltage
High Side2)
2) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR
VDS(HS)
–
–
–
0.9
0.8
0.6
–
–
0.8
VIOUT = -9 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
Low Side Switch - Static Characteristics
5.2.4 ON State Low Side Resistance RON(LS)
–
–
4.7
7.5
–
9.9
mΩIOUT = -9 A; VS = 13.5 V
Tj = 25 °C; 1)
Tj = 150 °C
–
–
6
9.5
–
13.5
mΩIOUT = -6 A; VS = 6 V
Tj = 25 °C; 1)
Tj = 150 °C
5.2.5 Leakage Current Low Side IL(LKLS) ––2µAVINH = 0 V; VOUT = VS
Tj < 85 °C; 1)
–– 30µAVINH = 0 V; VOUT = VS
Tj = 150 °C
5.2.6 Reverse Diode Forward-Voltage
Low Side2)
-VDS(LS)
–
–
–
0.9
0.8
0.7
–
–
0.9
VIOUT = 9 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
@180"
Data Sheet 12 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
5.2.2 Switching Times
Figure 7 Definition of switching times high side (Rload to GND)
Figure 8 Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
•
Δ
tHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
•
Δ
tLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)).
IN
V
OUT
t
t
ΔV
OUT
t
dr(HS)
t
r(HS)
t
df(HS)
t
f(HS)
ΔV
OUT
20% 20%
80%80%
IN
V
OUT
t
t
ΔV
OUT
t
df(LS)
t
f(LS)
ΔV
OUT
t
dr(LS)
t
r(LS)
20% 20%
80%
80%
@neon,
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
Data Sheet 13 Rev. 1.0, 2013-05-17
5.2.3 Power Stages - Dynamic Characteristics
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 2 Ω, 30µH < Lload < 40µH (in series to Rload), single pulse,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
High Side Switch Dynamic Characteristics
5.2.7 Rise-Time of HS tr(HS)
0.05
–
0.22
0.25
0.38
1.3
0.85
–
6
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.8 Switch ON Delay Time HS tdr(HS)
1.5
–
2
3.4
5.2
15
4.6
–
31
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.9 Fall-Time of HS tf(HS)
0.05
–
0.22
0.25
0.38
1.3
0.85
–
6
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.10 Switch OFF Delay Time HS tdf(HS)
0.8
–
1.1
2.4
3.4
9
4.1
–
21
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Low Side Switch Dynamic Characteristics
5.2.11 Rise-Time of LS tr(LS)
0.05
–
0.22
0.25
0.38
1.3
0.85
–
6
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.12 Switch OFF Delay Time LS tdr(LS)
0.2
–
1
1.5
2.4
7
2.5
–
16
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.13 Fall-Time of LS tf(LS)
0.05
–
0.22
0.25
0.38
1.3
0.85
–
6
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.14 Switch ON Delay Time LS tdf(LS)
1.8
–
2.0
4.2
6
16
6.1
–
36
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
@180"
Data Sheet 14 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
5.3 Protection Functions
The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the current
limitation (Chapter 5.3.3). In case of overtemperature the BTN8982TA will apply the slew rate determined by the
connected slew rate resistor. In current limitation mode the highest slew rate possible will be applied independent
of the connected slew rate resistor. Overtemperature and overcurrent are indicated by a fault current IIS(LIM) at the
IS pin as described in the paragraph “Status Flag Diagnosis with Current Sense Capability” on Page 17 and
Figure 12.
5.3.1 Undervoltage Shut Down
To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the
supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY)
if the supply voltage rises above the switch-on voltage VUV(ON).
5.3.2 Overtemperature Protection
The BTN8982TA is protected against overtemperature by an integrated temperature sensor. Overtemperature
leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a
minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis
ΔT in the meantime.
Repetitive use of the overtemperature protection impacts lifetime.
5.3.3 Current Limitation
The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch
(high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS.
During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both
MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS.
Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the
motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the
effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10.
Figure 9 Timing Diagram Current Limitation (Inductive Load)
I
L
t
I
CLx
t
CLS
I
CLx0
@180" 35 85 34 34 33 83 82 82 31 81 30 30 79 79 1 73 7B - - 77 77 / """""" 76 75 75 75 74 74 73 73 72 72 71 1 i , 71 70 70 0 500 1000 1500 2000 0 500 1000 1 500 2000 4» 4» B5 35 54 34 33 B3 32 B2 31 B1 30 BO 79 79 78 78 77 77 76 76 75 75 74 74 73 73 72 72 71 71 70 ‘ ‘ ‘ 70 8 10 12 14 1G 15 20 22 24 B 10 12 14 15 13 2D 22 24 a 4»
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
Data Sheet 15 Rev. 1.0, 2013-05-17
Figure 10 Typical Current Limitation Detection Level vs. Current Slew Rate dIL/dt
Figure 11 Typical Current Limitation Detection Levels vs. Supply Voltage
In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.
This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN8982TA
dIL/dt
ICLH [A]
[A/ms]
ICLH0
Tj= 25°C
Tj= 150°C
Tj= -40°C
High Side Switch
ICLL0 Tj= 25°C
Tj= -40°C
Tj= 150°C
dIL/dt
ICLL [A]
[A/ms]
Low Side Switch
Tj= 25°C
High Side Switch
Tj= -40°C
Tj= 150°C
VS [V]
ICLH [A]
Tj= 25°C
Low Side Switch
Tj= -40°C
Tj= 150°C
VS [V]
ICLL [A]
@neon,
Data Sheet 16 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short
time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor
start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction
temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.
5.3.4 Short Circuit Protection
The device provides embedded protection functions against
• output short circuit to ground
• output short circuit to supply voltage
• short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the over-
temperature shut down of the device.
5.3.5 Electrical Characteristics - Protection Functions
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Under Voltage Shut Down
5.3.1 Switch-ON Voltage VUV(ON) ––5.5V VS increasing
5.3.2 Switch-OFF Voltage1)
1) With decreasing Vs < 5.5V activation of the Current Limitation mode may occur before Undervoltage Shut Down.
VUV(OFF) 3.0 – 4.5 V VS decreasing, INH = 1
5.3.3 ON/OFF Hysteresis VUV(HY) –0.2–V 2)
2) Not subject to production test, specified by design.
Current Limitation
5.3.4 Current Limitation Detection level
High Side
ICLH0 55 77 98 A VS = 13.5 V
5.3.5 Current Limitation Detection level
Low Side
ICLL0 55 77 98 A VS = 13.5 V
Current Limitation Timing
5.3.6 Shut OFF Time for HS and LS tCLS 70 115 210 µs VS = 13.5 V; 2)
Thermal Shut Down
5.3.7 Thermal Shut Down Junction
Temperature
TjSD 155 175 200 °C–
5.3.8 Thermal Switch ON Junction
Temperature
TjSO 150 – 190 °C–
5.3.9 Thermal Hysteresis ΔT–7–K 2)
5.3.10 Reset Pulse at INH Pin (INH low) treset 4––µs 2)
o/_ Inflneon
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
Data Sheet 17 Rev. 1.0, 2013-05-17
5.4 Control and Diagnostics
5.4.1 Input Circuit
The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the
integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of
the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH
pin has to be set to low. No external driver is needed. The BTN8982TA can be interfaced directly to a
microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded.
5.4.2 Dead Time Generation
In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same
time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so
called dead time between switching off one MOSFET and switching on the other. The dead time generated in the
driver IC is automatically adjusted to the selected slew rate.
5.4.3 Adjustable Slew Rate
In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external
resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation
within his own application by connecting an external resistor RSR to GND.
5.4.4 Status Flag Diagnosis with Current Sense Capability
IIS 1
dkILIS
----------------IL
⋅IIS offset()
+=
ILdkILIS IIS IIS offset()
–()⋅=
dkILIS
IL2 IL1
–
IIS IL2
()IIS IL1
()–
--------------------------------------------
=
The sense pin IS is used as a combined current sense and error flag output.
In normal operation (current sense mode), a current source is connected to the status pin, which delivers a current
proportional to the forward load current flowing through the active high side switch. The sense current can be
calculated out of the load current by the following equation:
(1)
The other way around, the load current can be calculated out of the sense current by following equation:
(2)
The differential current sense ratio dkilis is defined by:
(3)
If the high side drain current is zero (ISD(HS) = 0A) the offset current IIS = IIS(offset) still will be driven.
The external resistor RIS determines the voltage per IS output current. The voltage can be calculated by
VIS = RIS . IIS.
In case of a fault condition the status output is connected to a current source which is independent of the load
current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external resistor
and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS.
@180" BM W
Data Sheet 18 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
Figure 12 Sense Current and Fault Current
Figure 13 Sense Current vs. Load Current
VS
RIS
IIS~ ILoad
ESD-ZD
VIS
Sense
output
logic
IS
IIS(lim)
IIS(offset)
Normal operation:
current sense mode
VS
RIS
IIS~ ILoad
ESD-ZD
VIS
Sense
output
logic
IS
IIS(lim)
IIS(offset)
Fault condition:
error flag mode
IL[A]
IIS(lim)
IIS
[mA]
ICLx
Error Flag Mode
lower dk
ILIS
value
higher dk
ILIS
value
Current Sense Mode
(High Side)
IIS(offset)
@neon,
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
Data Sheet 19 Rev. 1.0, 2013-05-17
5.4.5 Truth Table
Device State Inputs Outputs Mode
INH IN HSS LSS IS
Normal Operation 0 X OFF OFF 0 Stand-by mode
10OFFON
IIS(offset) LSS active
1 1 ON OFF CS HSS active
Under-Voltage (UV) X X OFF OFF 0 UV lockout, reset
Overtemperature (OT)
or Short Circuit of HSS or LSS
0 X OFF OFF 0 Stand-by mode, reset of latch
1 X OFF OFF 1 Shut-down with latch, error detected
Current Limitation Mode/
Overcurrent (OC)
1 1 OFF ON 1 Switched mode, error detected1)
1) Will return to normal operation after tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.3)
1 0 ON OFF 1 Switched mode, error detected1)
Inputs Switches Current Sense / Status Flag IS
0 = Logic LOW OFF = switched off IIS(offset) = Current sense - Offset (for
conditions see table: Current
Sense)
1 = Logic HIGH ON = switched on CS = Current sense - high side (for
conditions see table: Current
Sense)
X = 0 or 1 1 = Logic HIGH (error)
0/. @Ineon 0,30 , 0,30 0,25 0,20 0,26 0.26 0,24 0,24 0,22 0,22 0,20 0,20 0,18 0.18 0,16 0,16 0,14 0.14 0,12 ‘ ‘ ‘ ‘ 0.12 0,10 ‘ ‘ ‘ ‘ ‘ ‘ 0,10 ‘ ‘ 5 1D 15 20 25 30 35 40 >40 -20 D 20 AD 60 80 100120 140 4» 4»
Data Sheet 20 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
5.4.6 Electrical Characteristics - Control and Diagnostics
Figure 14 Typical Current Sense Offset Current
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Control Inputs (IN and INH)
5.4.1 High level Voltage
INH, IN
VINH(H)
VIN(H)
–
–
1.75
1.6
2.15
2
V–
5.4.2 Low level Voltage
INH, IN
VINH(L)
VIN(L)
1.1 1.4 – V –
5.4.3 Input Voltage hysteresis VINHHY
VINHY
–
–
350
200
–
–
mV 1)
1) Not subject to production test, specified by design
5.4.4 Input Current high level IINH(H)
IIN(H)
10 30 150 µA VIN = VINH = 5.3 V
5.4.5 Input Current low level IINH(L)
IIN(L)
10 25 125 µA VIN = VINH = 0.4 V
Current Sense
5.4.6 Differential Current Sense ratio
in static on-condition
dkILIS = dIL / dIIS
dkILIS
14 19.5 25
103RIS = 1 kΩ
IL1 = 10 A
IL2 = 40 A
5.4.7 Maximum analog Sense Current,
Sense Current in fault Condition
IIS(lim) 456.5mAVS = 13.5 V
RIS = 1kΩ
5.4.8 Isense Leakage current IISL ––1µAVINH = 0 V
5.4.9 Isense offset current IIS(offset) 30 170 385 µA VS = 18V; VINH = 5 V
ISD(HS) = 0 A
Tj= 150°C
Tj= 25°C
Tj= -40°C
VS[V]
IIS-offset [mA]
IIS-offset [mA]
T [°C]
0/. @Ineon 6.0 3,0
High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
Data Sheet 21 Rev. 1.0, 2013-05-17
Figure 15 Typical characteristic of the maximum analog Sense Current in fault condition (Pos. 5.4.7.)
VS[V]
IIS(lim) [mA]
Tj= 150°C
Tj= 25°C
Tj= -40°C
@180"
Data Sheet 22 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Application Information
6 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
6.1 Application Circuit
Figure 16 Application Circuit: H-Bridge with two BTN8982TA
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.2 Layout Considerations
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The
BTN8982TA has no separate pin for power ground and logic ground. Therefore it is recommended to assure that
the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of
the device (GND / pin 1) is minimized. If the BTN8982TA is used in a H-bridge or B6 bridge design, the voltage
offset between the GND pins of the different devices should be small as well.
Due to the fast switching behavior of the device in current limitation mode a low ESR electrolytic capacitor C10 from
VS to GND is necessary. This prevents destructive voltage peaks and drops on VS. This is needed for both PWM
and non PWM controlled applications. To assure efficiency of C10 and C19/ C29 the stray inductance must be low.
Therefore the capacitors must be placed very close to the device pins. The value of the capacitors must be verified
in the real application, taking care for low ripple and transients at the Vs pin of the BTN8982TA.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors greater than 7kΩ.
optional
M
XC866 TLE
4278G
I/O
Reset
Vdd
Vss
WO
RO
Q
DGND
I
Microcontroller Voltage Regulator
C
19
100nF
C
D
47nF
C
Q
22µF
C
10
1000µF
R
11
10kΩ
R
12
10kΩ
R
111
0..51kΩ
R
112
1k Ω
I/OI/O
C
I
470nF
C
1O 2V
220nF
C
1OUT
220nF
C
2O2V
220nF
C
2OUT
220nF
C
29
100nF
R
211
0..51kΩ
I/OA/D
R
22
10kΩ
R
21
10kΩ
R
212
1kΩ
A/D
INH
IN
IS
SR
BTN8982TA
VS
OUT
GND
INH
IN
IS
SR
BTN8982TA
VS
OUT
GND
V
S
Reverse Polarity
Protection
(IPD90 P03 P 4L-04 )
R
3
10kΩ
D
Z1
10V
C
1
100nF
L
1
C
22
100nF
C
2IS
1nF
C
1IS
1nF
C
12
100nF
@180" WT WT
High Current PN Half Bridge
BTN8982TA
Application Information
Data Sheet 23 Rev. 1.0, 2013-05-17
Figure 17 Application Circuit: Half-Bridge with a BTN8982TA (Load to GND)
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.3 PWM Control
For the selection of the max. PWM frequency the choosen rise/fall-time and the requirements on the duty cycle
have to be taken into account. We recommend a PWM-period at least 10 times the rise-time.
Example:
Rise-time = fall-time = 4µs.
=> T-PWM = 10 * 4µs = 40µs.
=> f-PWM = 25kHz.
The min. and max. value of the duty cycle (PWM ON to OFF percentage) is determined by the real fall time plus
the real rise time. In this example a duty cycle make sense from approximately 20% to 80%.
If a wider duty cycle range is needed, the PWM frequency could be decreased and/or the rise/fall-time could be
accelerated.
M
XC866
TLE
4278G V
S
I/O
Reset
Vdd
Vss
WO
RO
Q
DGND
I
Microcontroller Reverse Polarity
Protection
(IPD90P03P 4L-04)
Voltage Regulator
C
9
100nF
C
D
47nF
C
Q
22µF
C
10
1000µF
R
3
10kΩ
D
Z1
10V
R
1
10kΩ
R
2
10kΩ
R
11
0..51kΩ
R
12
1k Ω
I/OI/OI/O
C
I
470nF
C
IS
1nF
C
O2V
220nF
C
1
100nF
L
1
C
OUT
220nF
C
2
100nF
INH
IN
IS
SR
VS
OUT
GND
BTN8982TA
0/. @Ineon « L Dj— T%‘/ + ‘1 WW {—Fr’j E l-lEl ::
Data Sheet 24 Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8982TA
Package Outlines
7 Package Outlines
Figure 18 PG-TO263-7-1 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
A
BA0.25 M
0.1
Typical
±0.2
10
8.5 1)
7.55
1)
(15)
±0.2
9.25
±0.3
1
0...0.15
7 x 0.6 ±0.1
±0.1
GPT09114
1.27
4.4
B
0.5
±0.1
±0.3
2.7
4.7
±0.5
0.05
1)
0.1
Metal surface min. X = 7.25, Y = 6.9
2.4
1.27
All metal surfaces tin plated, except area of cut.
0...0.3
B
6 x
8˚ MAX.
8.42
10.8
9.4
16.15
4.6
0.47
0.8
Footprint
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
o/_ Inflneon
High Current PN Half Bridge
BTN8982TA
Revision History
Data Sheet 25 Rev. 1.0, 2013-05-17
8 Revision History
Initial release.
Edition 2013-05-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.