M95M01-A125/A145 Datasheet by STMicroelectronics

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This is information on a product in full production.
October 2014 DocID023214 Rev 6 1/40
M95M01-A125
M95M01-A145
Automotive 1 Mbit serial SPI bus EEPROMs
with high-speed clock
Datasheet - production data
Features
Compatible with the Serial Peripheral Interface
(SPI) bus
Memory array
1 Mbit (128 Kbytes) of EEPROM
Page size: 256 bytes
Write protection by block: 1/4, 1/2 or whole
memory
Additional Write lockable Page
(Identification page)
Extended temperature and voltage ranges
Up to 125 °C (VCC from 2.5 V to 5.5 V)
Up to 145 °C (VCC from 2.5 V to 5.5 V)
High speed clock frequency
16 MHz for VCC 4.5 V
10 MHz for VCC 2.5 V
Schmitt trigger inputs for noise filtering
Short Write cycle time
Byte Write within 4 ms
Page Write within 4 ms
Write cycle endurance
4 million Write cycles at 25 °C
1.2 million Write cycles at 85 °C
600 k Write cycles at 125 °C
400 k Write cycles at 145 °C
Data retention
50 years at 125 °C
100 years at 25 °C
ESD Protection (Human Body Model)
4000 V
Packages
RoHS-compliant and halogen-free
(ECOPACK2®)
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
www.st.com
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Contents M95M01-A125 M95M01-A145
2/40 DocID023214 Rev 6
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 Serial Data output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2 Serial Data input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4 Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.5 Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.6 Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.7 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.8 VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1 Active power and Standby power modes . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.2 SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.3 Hold mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.4 Protocol control and data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.4.1 Protocol control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.4.2 Status Register and data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.5 Identification page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.1 Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2 Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.3 Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.4 Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.5 Read from Memory Array (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.6 Write to Memory Array (WRITE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.7 Read Identification Page (RDID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.8 Write Identification Page (WRID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.9 Read Lock Status (RDLS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.10 Lock Identification Page (LID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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M95M01-A125 M95M01-A145 Contents
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5 Application design recommendations . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.1 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.1.1 Operating supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.1.2 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.1.3 Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.2 Implementing devices on SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.3 Cycling with Error Correction Code (ECC) . . . . . . . . . . . . . . . . . . . . . . . . 28
6 Delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
10 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
List of tables M95M01-A125 M95M01-A145
4/40 DocID023214 Rev 6
List of tables
Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. Write-protected block size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5. Device identification bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 6. Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 7. Significant bits within the address bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 8. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 9. Cycling performance by groups of 4 bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 10. Operating conditions (voltage range W, temperature range 4). . . . . . . . . . . . . . . . . . . . . . 30
Table 11. Operating conditions (voltage range W, temperature range 3). . . . . . . . . . . . . . . . . . . . . . 30
Table 12. Operating conditions (voltage range W, temperature range 3)
for high-speed communications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 13. DC characteristics (voltage range W, temperature range 4). . . . . . . . . . . . . . . . . . . . . . . . 31
Table 14. DC characteristics (voltage range W, temperature range 3). . . . . . . . . . . . . . . . . . . . . . . . 32
Table 15. AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 16. SO8N – 8-lead plastic small outline, 150 mils body width, package mechanical data . . . . 36
Table 17. TSSOP8 – 8-lead thin shrink small outline, package mechanical data. . . . . . . . . . . . . . . . 37
Table 18. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 19. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
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M95M01-A125 M95M01-A145 List of figures
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List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 2. 8-pin package connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 4. Hold mode activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 5. Write Enable (WREN) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 6. Write Disable (WRDI) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 7. Read Status Register (RDSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 8. Write Status Register (WRSR) sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 9. Read from Memory Array (READ) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 10. Byte Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 11. Page Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 12. Read Identification Page sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 13. Write Identification Page sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 14. Read Lock Status sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 15. Lock ID sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 16. Bus master and memory devices on the SPI bus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 17. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 18. Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 19. Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 20. Serial output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 21. SO8N – 8-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . . 36
Figure 22. TSSOP8 – 8-lead thin shrink small outline, package outline . . . . . . . . . . . . . . . . . . . . . . . 37
TTT H
Description M95M01-A125 M95M01-A145
6/40 DocID023214 Rev 6
1 Description
The M95M01-A125 and M95M01-A145 are 1-Mbit serial EEPROM Automotive grade
devices operating up to 145°C. They are compliant with the very high level of reliability
defined by the Automotive standard AEC-Q100 grade 0.
The devices are accessed by a simple serial SPI compatible interface running up to
16 MHz.
The memory array is based on advanced true EEPROM technology (Electrically Erasable
PROgrammable Memory). The M95M01-A125 and M95M01-A145 are byte-alterable
memories (131072 × 8 bits) organized as 512 pages of 256 bytes in which the data integrity
is significantly improved with an embedded Error Correction Code logic.
The M95M01-A125 and M95M01-A145 offer an additional Identification Page (256 bytes) in
which the ST device identification can be read. This page can also be used to store
sensitive application parameters which can be later permanently locked in read-only mode.
Figure 1. Logic diagram
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M95M01-A125 M95M01-A145 Description
39
Figure 2. 8-pin package connections
1. See Package mechanical data section for package dimensions and how to identify pin-1.
Table 1. Signal names
Signal name Description
C Serial Clock
D Serial data input
Q Serial data output
SChip Select
WWrite Protect
HOLD Hold
VCC Supply voltage
VSS Ground
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Signal description M95M01-A125 M95M01-A145
8/40 DocID023214 Rev 6
2 Signal description
All input signals must be held high or low (according to voltages of VIH or VIL, as specified in
Table 13 and Table 14). These signals are described below.
2.1 Serial Data output (Q)
This output signal is used to transfer data serially out of the device during a Read operation.
Data is shifted out on the falling edge of Serial Clock (C), most significant bit (MSB) first. In
all other cases, the Serial Data output is in high impedance.
2.2 Serial Data input (D)
This input signal is used to transfer data serially into the device. D input receives
instructions, addresses, and the data to be written. Values are latched on the rising edge of
Serial Clock (C), most significant bit (MSB) first.
2.3 Serial Clock (C)
This input signal allows to synchronize the timing of the serial interface. Instructions,
addresses, or data present at Serial Data Input (D) are latched on the rising edge of Serial
Clock (C). Data on Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4 Chip Select (S)
Driving Chip Select (S) low selects the device in order to start communication. Driving Chip
Select (S) high deselects the device and Serial Data output (Q) enters the high impedance
state.
2.5 Hold (HOLD)
The Hold (HOLD) signal is used to pause any serial communications with the device without
deselecting the device.
2.6 Write Protect (W)
This pin is used to write-protect the Status Register.
2.7 VSS ground
VSS is the reference for all signals, including the VCC supply voltage.
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M95M01-A125 M95M01-A145 Signal description
39
2.8 VCC supply voltage
VCC is the supply voltage pin. Refer to Section 3.1: Active power and Standby power modes
and to Section 5.1: Supply voltage (VCC).
Operating features M95M01-A125 M95M01-A145
10/40 DocID023214 Rev 6
3 Operating features
3.1 Active power and Standby power modes
When Chip Select (S) is low, the device is selected and in the Active power mode.
When Chip Select (S) is high, the device is deselected. If a Write cycle is not currently in
progress, the device then goes in to the Standby power mode, and the device consumption
drops to ICC1, as specified in Table 13 and Table 14.
3.2 SPI modes
The device can be driven by a microcontroller with its SPI peripheral running in either of the
two following modes:
CPOL=0, CPHA=0
CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 3, is the clock polarity when the
bus master is in Stand-by mode and not transferring data:
C remains at 0 for (CPOL=0, CPHA=0)
C remains at 1 for (CPOL=1, CPHA=1)
Figure 3. SPI modes supported
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M95M01-A125 M95M01-A145 Operating features
39
3.3 Hold mode
The Hold (HOLD) signal is used to pause any serial communications with the device without
resetting the clocking sequence.
The Hold mode starts when the Hold (HOLD) signal is driven low and the Serial Clock (C) is
low (as shown in Figure 4). During the Hold mode, the Serial Data output (Q) is high
impedance, and the signals present on Serial Data input (D) and Serial Clock (C) are not
decoded. The Hold mode ends when the Hold (HOLD) signal is driven high and the Serial
Clock (C) is or becomes low.
Figure 4. Hold mode activation
Deselecting the device while it is in Hold mode resets the paused communication.
3.4 Protocol control and data protection
3.4.1 Protocol control
The Chip Select (S) input offers a built-in safety feature, as the S input is edge-sensitive as
well as level-sensitive: after power-up, the device is not selected until a falling edge has first
been detected on Chip Select (S). This ensures that Chip Select (S) must have been high
prior to going low, in order to start the first operation.
For Write commands (WRITE, WRSR, WRID, LID) to be accepted and executed:
the Write Enable Latch (WEL) bit must be set by a Write Enable (WREN) instruction
a falling edge and a low state on Chip Select (S) during the whole command must be
decoded
instruction, address and input data must be sent as multiple of eight bits
the command must include at least one data byte
Chip Select (S) must be driven high exactly after a data byte boundary
Write command can be discarded at any time by a rising edge on Chip Select (S) outside of
a byte boundary.
To execute Read commands (READ, RDSR, RDID, RDLS), the device must decode:
a falling edge and a low level on Chip Select (S) during the whole command
instruction and address as multiples of eight bits (bytes)
From this step, data bits are shifted out until the rising edge on Chip Select (S).
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Operating features M95M01-A125 M95M01-A145
12/40 DocID023214 Rev 6
3.4.2 Status Register and data protection
The Status Register format is shown in Table 2 and the status and control bits of the Status
Register are as follows:
Note: Bits b6, b5, b4 are always read as 0.
WIP bit
The WIP bit (Write In Progress) is a read-only flag that indicates the Ready/Busy state of the
device. When a Write command (WRITE, WRSR, WRID, LID) has been decoded and a
Write cycle (tW) is in progress, the device is busy and the WIP bit is set to 1. When WIP=0,
the device is ready to decode a new command.
During a Write cycle, reading continuously the WIP bit allows to detect when the device
becomes ready (WIP=0) to decode a new command.
WEL bit
The WEL bit (Write Enable Latch) bit is a flag that indicates the status of the internal Write
Enable Latch. When WEL is set to 1, the Write instructions (WRITE, WRSR, WRID, LID) are
executed; when WEL is set to 0, any decoded Write instruction is not executed.
The WEL bit is set to 1 with the WREN instruction. The WEL bit is reset to 0 after the
following events:
Write Disable (WRDI) instruction completion
Write instructions (WRITE, WRSR, WRID, LID) completion including the write cycle
time tW
Power-up
BP1, BP0 bits
The Block Protect bits (BP1, BP0) are non-volatile. BP1,BP0 bits define the size of the
memory block to be protected against write instructions, as defined in Table 2. These bits
are written with the Write Status Register (WRSR) instruction, provided that the Status
Register is not protected (refer to “SRWD bit and W input signal”, on page 13).
Table 2. Status Register format
b7 b6 b5 b4 b3 b2 b1 b0
SRWD 0 0 0 BP1 BP0 WEL WIP
Status Register Write Protect
Block Protect bits
Write Enable Latch bit
Write In Progress bit
W E \ E‘ E‘ E \ E \ E \ E \ E \
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M95M01-A125 M95M01-A145 Operating features
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SRWD bit and W input signal
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect pin (W) signal. When the SRWD bit is written to 0, it is possible to write the Status
Register, regardless of whether the pin Write Protect (W) is driven high or low.
When the SRWD bit is written to 1, two cases have to be considered, depending on the
state of the W input pin:
Case 1: if pin W is driven high, it is possible to write the Status Register.
Case 2: if pin W is driven low, it is not possible to write the Status Register (WRSR is
discarded) and therefore SRWD,BP1,BP0 bits cannot be changed (the size of the
protected memory block defined by BP1,BP0 bits is frozen).
Case 2 can be entered in either sequence:
Writing SRWD bit to 1 after driving pin W low, or
Driving pin W low after writing SRWD bit to 1.
The only way to exit Case 2 is to pull pin W high.
Note: if pin W is permanently tied high, the Status Register cannot be write-protected.
The protection features of the device are summarized in Table 4.
3.5 Identification page
The M95M01-A125 and M95M01-A145 offer an Identification page (256 bytes) in addition to
the 1 Mbit memory. The Identification page contains two fields:
Device identification: the three first bytes are programmed by STMicroelectronics with
the Device identification code, as shown in Table 5.
Application parameters: the bytes after the Device identification code are available for
application specific data.
Table 3. Write-protected block size
Status Register bits
Protected block Protected array addresses
BP1 BP0
0 0 None None
0 1 Upper quarter 1.80.00h - 1.FF.FFh
1 0 Upper half 1.00.00h - 1.FF.FFh
1 1 Whole memory 0.00.00h - 1FF.FFh plus Identification page
Table 4. Protection modes
SRWD bit W signal Status
0X
Status Register is writable.
11
1 0 Status Register is write-protected.
Operating features M95M01-A125 M95M01-A145
14/40 DocID023214 Rev 6
Note: If the end application does not need to read the Device identification code, this field can be
overwritten and used to store application-specific data. Once the application-specific data
are written in the Identification page, the whole Identification page should be permanently
locked in Read-only mode.
The Read, Write, Lock Identification Page instructions are detailed in Section 4: Instructions.
Table 5. Device identification bytes
Address in
Identification page Content Value
00h ST Manufacturer code 20h
01h SPI Family code 00h
02h Memory Density code 11h (1 Mbit)
DocID023214 Rev 6 15/40
M95M01-A125 M95M01-A145 Instructions
39
4 Instructions
Each command is composed of bytes (MSBit transmitted first), initiated with the instruction
byte, as summarized in Tabl e 6.
If an invalid instruction is sent (one not contained in Table 6), the device automatically enters
a Wait state until deselected.
For read and write commands to memory array and Identification Page, the address is
defined by three bytes as explained in Table 7.
Table 6. Instruction set
Instruction Description Instruction
format
WREN Write Enable 0000 0110
WRDI Write Disable 0000 0100
RDSR Read Status Register 0000 0101
WRSR Write Status Register 0000 0001
READ Read from Memory Array 0000 0011
WRITE Write to Memory Array 0000 0010
RDID Read Identification Page 1000 0011
WRID Write Identification Page 1000 0010
RDLS Reads the Identification Page lock status. 1000 0011
LID Locks the Identification page in read-only mode. 1000 0010
Table 7. Significant bits within the address bytes(1) (2)
Instruction Upper address byte
b23 b22 ... b17 b16
Middle address byte
b15 b14 ... b10 b9 b8
Lower address byte
b7 b6 ... b2 b1 b0
READ or WRITE x x ... x A16 A15 A14 ... A10 A9 A8 A7 A6 ... A1 A0
RDID or WRID 0 0 ... 0 0 0 0 ... 0 0 0 A7 A6 ... A1 A0
RDLS or LID 0 0 ... 0 0 0 0 0 0 . 0 1 0 0 0 0 ... 0 0
1. A: Significant address bit.
2. x: bit is Don’t Care.
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Instructions M95M01-A125 M95M01-A145
16/40 DocID023214 Rev 6
4.1 Write Enable (WREN)
The WREN instruction must be decoded by the device before a write instruction (WRITE,
WRSR, WRID or LID).
As shown in Figure 5, to send this instruction to the device, Chip Select (S) is driven low, the
bits of the instruction byte are shifted in (MSB first) on Serial Data Input (D) after what the
Chip Select (S) input is driven high and the WEL bit is set (Status Register bit).
Figure 5. Write Enable (WREN) sequence
4.2 Write Disable (WRDI)
One way of resetting the WEL bit (in the Status Register) is to send a Write Disable
instruction to the device.
As shown in Figure 6, to send this instruction to the device, Chip Select (S) is driven low,
and the bits of the instruction byte are shifted in (MSB first), on Serial Data Input (D), after
what the Chip Select (S) input is driven high and the WEL bit is reset (Status Register bit).
If a Write cycle is currently in progress, the WRDI instruction is decoded and executed and
the WEL bit is reset to 0 with no effect on the ongoing Write cycle.
Figure 6. Write Disable (WRDI) sequence
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M95M01-A125 M95M01-A145 Instructions
39
4.3 Read Status Register (RDSR)
The Read Status Register (RDSR) instruction is used to read the content of the Status
Register.
As shown in Figure 7, to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte are shifted in (MSB first) on Serial Data Input (D), the
Status Register content is then shifted out (MSB first) on Serial Data Output (Q).
If Chip Select (S) continues to be driven low, the Status Register content is continuously
shifted out.
The Status Register can always be read, even if a Write cycle (tW) is in progress. The Status
Register functionality is detailed in Section 3.4.2: Status Register and data protection.
Figure 7. Read Status Register (RDSR) sequence
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Instructions M95M01-A125 M95M01-A145
18/40 DocID023214 Rev 6
4.4 Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed.
The Write Status Register (WRSR) instruction is entered (MSB first) by driving Chip Select
(S) low, sending the instruction code followed by the data byte on Serial Data input (D), and
driving the Chip Select (S) signal high.
The contents of the SRWD and BP1, BP0 bits are updated after the completion of the
WRSR instruction, including the Write cycle (tW).
The Write Status Register (WRSR) instruction has no effect on the b6, b5, b4, b1 and b0 bits
in the Status Register (see Table 2: Status Register format).
The Status Register functionality is detailed in Section 3.4.2: Status Register and data
protection.
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
Figure 8. Write Status Register (WRSR) sequence
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M95M01-A125 M95M01-A145 Instructions
39
4.5 Read from Memory Array (READ)
The READ instruction is used to read the content of the memory.
As shown in Figure 9, to send this instruction to the device, Chip Select (S) is first driven
low.
The bits of the instruction byte and address bytes are shifted in (MSB first) on Serial Data
Input (D) and the addressed data byte is then shifted out (MSB first) on Serial Data Output
(Q). The first addressed byte can be any byte within any page.
If Chip Select (S) continues to be driven low, the internal address register is automatically
incremented, and the next byte of data is shifted out. The whole memory can therefore be
read with a single READ instruction.
When the highest address is reached, the address counter rolls over to zero, allowing the
Read cycle to be continued indefinitely.
The Read cycle is terminated by driving Chip Select (S) high at any time when the data bits
are shifted out on Serial Data Output (Q).
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
Figure 9. Read from Memory Array (READ) sequence
1. Depending on the memory size, as shown in Table 7, the most significant address bits are Don’t Care.
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Instructions M95M01-A125 M95M01-A145
20/40 DocID023214 Rev 6
4.6 Write to Memory Array (WRITE)
The WRITE instruction is used to write new data in the memory.
As shown in Figure 10, to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte, address bytes, and at least one data byte are then
shifted in (MSB first), on Serial Data Input (D). The instruction is terminated by driving Chip
Select (S) high at a data byte boundary. Figure 10 shows a single byte write.
Figure 10. Byte Write (WRITE) sequence
1. Depending on the memory size, as shown in Table 7, the most significant address bits are Don’t Care.
A Page write is used to write several bytes inside a page, with a single internal Write cycle.
For a Page write, Chip Select (S) has to remain low, as shown in Figure 11, so that the next
data bytes are shifted in. Each time a new data byte is shifted in, the least significant bits of
the internal address counter are incremented. If the address counter exceeds the page
boundary (the page size is 256 bytes), the internal address pointer rolls over to the
beginning of the same page where next data bytes will be written. If more than 256 bytes are
received, only the last 256 bytes are written.
For both Byte write and Page write, the self-timed Write cycle starts from the rising edge of
Chip Select (S), and continues for a period tW (as specified in Table 15).
The instruction is discarded, and is not executed, under the following conditions:
if a Write cycle is already in progress
if the addressed page is in the region protected by the Block Protect (BP1 and BP0)
bits
if one of the conditions defined in Section 3.4.1 is not satisfied
Note: The self-timed Write cycle tW is internally executed as a sequence of two consecutive
events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit
is read as “0” and a programmed bit is read as “1”.
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M95M01-A125 M95M01-A145 Instructions
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Figure 11. Page Write (WRITE) sequence
1. Depending on the memory size, as shown in Table 7, the most significant address bits are Don’t Care.
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Instructions M95M01-A125 M95M01-A145
22/40 DocID023214 Rev 6
4.7 Read Identification Page (RDID)
The Read Identification Page instruction is used to read the Identification Page (additional
page of 256 bytes which can be written and later permanently locked in Read-only mode).
The Chip Select (S) signal is first driven low, the bits of the instruction byte and address
bytes are then shifted in (MSB first) on Serial Data input (D). Address bit A10 must be 0 and
the other upper address bits are Don't Care (it might be easier to define these bits as 0, as
shown in Table 7). The data byte pointed to by the lower address bits [A7:A0] is shifted out
(MSB first) on Serial Data output (Q).
The first byte addressed can be any byte within the identification page.
If Chip Select (S) continues to be driven low, the internal address register is automatically
incremented and the byte of data at the new address is shifted out.
Note that there is no roll over feature in the Identification Page. The address of bytes to read
must not exceed the page boundary.
The read cycle is terminated by driving Chip Select (S) high. The rising edge of the Chip
Select (S) signal can occur at any time when the data bits are shifted out.
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
Figure 12. Read Identification Page sequence
The first three bytes of the Identification page offer information about the device itself.
Please refer to Section 3.5: Identification page for more information.
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DocID023214 Rev 6 23/40
M95M01-A125 M95M01-A145 Instructions
39
4.8 Write Identification Page (WRID)
The Write Identification Page instruction is used to write the Identification Page (additional
page of 256 bytes which can also be permanently locked in Read-only mode).
The Chip Select signal (S) is first driven low, and then the bits of the instruction byte,
address bytes, and at least one data byte are shifted in (MSB first) on Serial Data input (D).
Address bit A10 must be 0 and the other upper address bits are Don't Care (it might be
easier to define these bits as 0, as shown in Table 7). The lower address bits [A7:A0] define
the byte address inside the identification page.
The self-timed Write cycle starts from the rising edge of Chip Select (S), and continues for a
period tW (as specified in Table 15).
Figure 13. Write Identification Page sequence
Note: The first three bytes of the Identification page offer the Device Identification code (Please
refer to Section 3.5: Identification page for more information). Using the WRID command on
these first three bytes overwrites the Device Identification code.
The instruction is discarded, and is not executed, under the following conditions:
If a Write cycle is already in progress
If the Block Protect bits (BP1,BP0) = (1,1)
If one of the conditions defined in Section 3.4.1: Protocol control is not satisfied.
4.9 Read Lock Status (RDLS)
The Read Lock Status instruction is used to read the lock status.
To send this instruction to the device, Chip Select (S) first has to be driven low. The bits of
the instruction byte and address bytes are then shifted in (MSB first) on Serial Data input
(D). Address bit A10 must be 1; all other address bits are Don't Care (it might be easier to
define these bits as 0, as shown in Table 7). The Lock bit is the LSB (Least Significant Bit) of
the byte read on Serial Data output (Q). It is at ‘1’ when the lock is active and at ‘0’ when the
lock is not active. If Chip Select (S) continues to be driven low, the same data byte is shifted
out.
The read cycle is terminated by driving Chip Select (S) high. The instruction sequence is
shown in Figure 14.
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Instructions M95M01-A125 M95M01-A145
24/40 DocID023214 Rev 6
The Read Lock Status instruction is not accepted and not executed if a Write cycle is
currently in progress.
Figure 14. Read Lock Status sequence
4.10 Lock Identification Page (LID)
The Lock Identification Page (LID) command is used to permanently lock the Identification
Page in Read-only mode.
The LID instruction is issued by driving Chip Select (S) low, sending (MSB first) the
instruction code, the address and a data byte on Serial Data input (D), and driving Chip
Select (S) high. In the address sent, A10 must be equal to 1. All other address bits are Don't
Care (it might be easier to define these bits as 0, as shown in Table 7). The data byte sent
must be equal to the binary value xxxx xx1x, where x = Don't Care. The LID instruction is
terminated by driving Chip Select (S) high at a data byte boundary, otherwise, the instruction
is not executed.
Figure 15. Lock ID sequence
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DocID023214 Rev 6 25/40
M95M01-A125 M95M01-A145 Instructions
39
Driving Chip Select (S) high at a byte boundary of the input data triggers the self-timed Write
cycle which duration is tW (specified in Table 15). The instruction sequence is shown in
Figure 15.
The instruction is discarded, and is not executed, under the following conditions:
If a Write cycle is already in progress
If the Block Protect bits (BP1,BP0) = (1,1)
If one of the conditions defined in Section 3.4.1: Protocol control is not satisfied.
Application design recommendations M95M01-A125 M95M01-A145
26/40 DocID023214 Rev 6
5 Application design recommendations
5.1 Supply voltage (VCC)
5.1.1 Operating supply voltage (VCC)
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage
within the specified [VCC(min), VCC(max)] range must be applied (see Table 10 and Table 11).
This voltage must remain stable and valid until the end of the transmission of the instruction
and, for a Write instruction, until the completion of the internal Write cycle (tW). In order to
secure a stable DC supply voltage, it is recommended to decouple the VCC line with a
suitable capacitor (usually of the order of 10 nF to 100 nF) close to the VCC/VSS package
pins.
5.1.2 Power-up conditions
When the power supply is turned on, VCC continuously rises from VSS to VCC. During this
time, the Chip Select (S) line is not allowed to float but should follow the VCC voltage. It is
therefore recommended to connect the S line to VCC via a suitable pull-up resistor (see
Figure 16).
The VCC voltage has to rise continuously from 0 V up to the minimum VCC operating voltage
defined in Table 13 and Table 14.
In order to prevent inadvertent write operations during power-up, a power-on-reset (POR)
circuit is included.
At power-up, the device does not respond to any instruction until VCC reaches the internal
threshold voltage (this threshold is defined in the DC characteristics tables 13 and 14 as
VRES).
When VCC passes over the POR threshold, the device is reset and in the following state:
in the Standby power mode
deselected
Status register values:
Write Enable Latch (WEL) bit is reset to 0.
Write In Progress (WIP) bit is reset to 0.
SRWD, BP1 and BP0 bits remain unchanged (non-volatile bits).
not in the Hold condition
As soon as the VCC voltage has reached a stable value within [VCC(min), VCC(max)] range,
the device is ready for operation.
DocID023214 Rev 6 27/40
M95M01-A125 M95M01-A145 Application design recommendations
39
5.1.3 Power-down
During power-down (continuous decrease in the VCC supply voltage below the minimum
VCC operating voltage defined in Table 13 and Table 14), the device must be:
deselected (Chip Select (S) should be allowed to follow the voltage applied on VCC),
in Standby power mode (there should not be any internal Write cycle in progress).
5.2 Implementing devices on SPI bus
Figure 16 shows an example of three devices, connected to the SPI bus master. Only one
device is selected at a time, so that only the selected device drives the Serial Data output
(Q) line. All the other devices outputs are then in high impedance.
Figure 16. Bus master and memory devices on the SPI bus
1. The Write Protect (W) and Hold (HOLD) signals must be driven high or low as appropriate.
A pull-up resistor connected on each /S input (represented in Figure 16) ensures that each
device is not selected if the bus master leaves the /S line in the high impedance state.
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Application design recommendations M95M01-A125 M95M01-A145
28/40 DocID023214 Rev 6
5.3 Cycling with Error Correction Code (ECC)
The Error Correction Code (ECC) is an internal logic function which is transparent for the
SPI communication protocol.
The ECC logic is implemented on each group of four EEPROM bytes(a). Inside a group, if a
single bit out of the four bytes happens to be erroneous during a Read operation, the ECC
detects this bit and replaces it with the correct value. The read reliability is therefore much
improved.
Even if the ECC function is performed on groups of four bytes, a single byte can be
written/cycled independently. In this case, the ECC function also writes/cycles the three
other bytes located in the same group(a). As a consequence, the maximum cycling budget is
defined at group level and the cycling can be distributed over the 4 bytes of the group: the
sum of the cycles seen by byte0, byte1, byte2 and byte3 of the same group must remain
below the maximum value defined in Table 9: Cycling performance by groups of 4 bytes.
Example1: maximum cycling limit reached with 1 million cycles per byte
Each byte of a group can be equally cycled 1 million times (at 25 °C) so that the group
cycling budget is 4 million cycles.
Example2: maximum cycling limit reached with unequal byte cycling
Inside a group, byte0 can be cycled 2 million times, byte1 can be cycled 1 million times,
byte2 and byte3 can be cycled 500,000 times, so that the group cycling budget is 4 million
cycles.
a. A group of four bytes is located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3], where N is an integer.
DocID023214 Rev 6 29/40
M95M01-A125 M95M01-A145 Delivery state
39
6 Delivery state
The device is delivered with:
the memory array set to all 1s (each byte = FFh),
Status register: bit SRWD =0, BP1 =0 and BP0 =0,
Identification page: the first three bytes define the Device identification code (value
defined in Table 5). The content of the following bytes is Don’t Care.
7 Absolute maximum ratings
Stressing the device outside the ratings listed in Table 8 may cause permanent damage to
the device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 8. Absolute maximum ratings
Symbol Parameter Min. Max. Unit
TSTG Storage temperature –65 150 °C
TAMR Ambient operating temperature –40 150 °C
TLEAD Lead temperature during soldering See note (1)
1. Compliant with JEDEC Std J-STD-020D (for small body, Sn-Pb or Pb-free assembly), the ST ECOPACK®
7191395 specification, and the European directive on Restrictions of Hazardous Substances (RoHS
directive 2011/65/EU of July 2011).
°C
VOVoltage on Q pin –0.50 VCC+0.6 V
VIInput voltage –0.50 6.5 V
IOL DC output current (Q = 0) - 5 mA
IOH DC output current (Q = 1) - 5 mA
VCC Supply voltage –0.50 6.5 V
VESD Electrostatic pulse (Human Body Model)(2)
2. Positive and negative pulses applied on pin pairs, in accordance with AEC-Q100-002 (compliant with
ANSI/ESDA/JEDEC JS-001-2012, C1=100 pF, R1=1500 Ω, R2=500 Ω)
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DC and AC parameters M95M01-A125 M95M01-A145
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8 DC and AC parameters
This section summarizes the operating conditions and the DC/AC characteristics of the
device.
Table 9. Cycling performance by groups of 4 bytes
Symbol Parameter Test condition Min. Max. Unit
Ncycle Write cycle endurance(1)
TA 25 °C, 2.5 V < VCC < 5.5 V - 4,000,000
Write
cycle(2)
TA = 85 °C, 2.5 V < VCC < 5.5 V - 1,200,000
TA = 125 °C, 2.5 V < VCC < 5.5 V - 600,000
TA = 145 °C(3), 2.5 V < VCC < 5.5 V - 400,000
1. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where
N is an integer, or for the status register byte (refer also to Section 5.3: Cycling with Error Correction Code (ECC)). The
Write cycle endurance is defined by characterization and qualification.
2. A Write cycle is executed when either a Page Write, a Byte Write, a WRSR, a WRID or an LID instruction is decoded.
When using the Byte Write, the Page Write or the WRID, refer also to Section 5.3: Cycling with Error Correction Code
(ECC).
3. For temperature range 4 only.
Table 10. Operating conditions (voltage range W, temperature range 4)
Symbol Parameter Conditions Min. Max. Unit
VCC Supply voltage - 2.5 5.5 V
TAAmbient operating temperature - –40 145 °C
fCOperating clock frequency 5.5 V VCC 2.5 V,
capacitive load on Q pin 100pF -10MHz
Table 11. Operating conditions (voltage range W, temperature range 3)
Symbol Parameter Conditions Min. Max. Unit
VCC Supply voltage - 2.5 5.5 V
TAAmbient operating temperature - –40 125 °C
fCOperating clock frequency VCC 2.5 V, capacitive load on Q pin 100pF - 10 MHz
Table 12. Operating conditions (voltage range W, temperature range 3)
for high-speed communications
Symbol Parameter Conditions Min. Max. Unit
VCC Supply voltage - 4.5 5.5 V
TAAmbient operating temperature - –40 85 °C
fCOperating clock frequency VCC 4.5 V, capacitive load on Q pin 60 pF - 16 MHz
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M95M01-A125 M95M01-A145 DC and AC parameters
39
Table 13. DC characteristics (voltage range W, temperature range 4)
Symbol Parameter
Specific test conditions
(in addition to conditions specified in
Table 10)
Min. Max. Unit
COUT(2) Output capacitance (Q) VOUT = 0 V - 8
pF
CIN(2) Input capacitance VIN = 0 V - 6
ILI Input leakage current VIN = VSS or VCC -2
µA
ILO Output leakage current S = VCC, VOUT = VSS or VCC -3
ICC Supply current (Read)
VCC = 2.5 V, fC = 10 MHz,
C = 0.1 VCC/0.9 VCC, Q = open -2
mA
VCC = 5.5 V, fC = 10 MHz,
C = 0.1 VCC/0.9 VCC, Q = open -4
ICC0(1) Supply current (Write) 2.5 V < VCC < 5.5 V, during tW,
S = VCC
-2
(2)
ICC1
Supply current
(Standby power mode)
t° = 85 °C, VCC = 2.5 V, S = VCC
VIN = VSS or VCC
-2
µA
t° = 85 °C, VCC = 5.5 V, S = VCC
VIN = VSS or VCC
-3
t° = 125 °C, VCC = 2.5 V, S = VCC
VIN = VSS or VCC
-15
t° = 125 °C, VCC = 5.5 V, S = VCC
VIN = VSS or VCC
-20
t° = 145 °C, VCC = 2.5 V, S = VCC
VIN = VSS or VCC
-25
t° = 145 °C, VCC = 5.5 V, S = VCC
VIN = VSS or VCC
-40
VIL Input low voltage - –0.45 0.3 VCC
V
VIH Input high voltage - 0.7 VCC VCC+1
VOL Output low voltage IOL = 2 mA - 0.4
VOH Output high voltage IOH = –2 mA 0.8 VCC -
VRES(2) Internal reset threshold
voltage -0.51.5
1. Average value during the Write cycle (tW)
2. Characterized only, not 100% tested
DC and AC parameters M95M01-A125 M95M01-A145
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Table 14. DC characteristics (voltage range W, temperature range 3)
Symbol Parameter
Test conditions
(in addition to conditions specified
in Table 11)
Min. Max. Unit
COUT(3) Output capacitance (Q) VOUT = 0 V - 8
pF
CIN(3) Input capacitance VIN = 0 V - 6
ILI Input leakage current VIN = VSS or VCC -2
µA
ILO Output leakage current S = VCC, VOUT = VSS or VCC -3
ICC Supply current (Read)
VCC = 2.5 V, C = 0.1VCC/0.9 VCC,
Q = open fC = 10 MHz -2
mA
VCC = 5.5 V, fC = 16 MHz(1)
C = 0.1 VCC/0.9 VCC, Q = open -5
ICC0(2) Supply current (Write) 2.5 V VCC < 5.5 V during tW,
S = VCC
-2
(3) mA
ICC1 Supply current (Standby mode)
t° = 85 °C, VCC = 2.5 V, S = VCC, VIN
= VSS or VCC
-2
µA
t° = 85 °C, VCC = 5.5 V, S = VCC, VIN
= VSS or VCC
-3
t° = 125 °C, VCC = 2.5 V, S = VCC, VIN
= VSS or VCC
-15
t° = 125 °C, VCC = 5.5 V, S = VCC,
VIN = VSS or VCC
-20
VIL Input low voltage 2.5 V VCC < 5.5 V –0.45 0.3 VCC V
VIH Input high voltage 2.5 V VCC < 5.5 V 0.7 VCC VCC+ 1 V
VOL Output low voltage VCC 2.5 V, IOL = 2 mA - 0.4 V
VOH Output high voltage VCC 2.5 V, IOH = -2 mA 0.8 VCC -V
VRES(3) Internal reset threshold voltage - 0.5 1.5 V
1. When –40 °C < t° < 85 °C.
2. Average value during the Write cycle (tW)
3. Characterized only, not 100% tested
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M95M01-A125 M95M01-A145 DC and AC parameters
39
Table 15. AC characteristics
Symbol Alt. Parameter
Min. Max. Min. Max.
Unit
Test
conditions
specified in
Table 10
and
Table 11
Test
conditions
specified in
Table 12
fCfSCK Clock frequency 10 16 MHz
tSLCH tCSS1 S active setup time 30 20
ns
tSHCH tCSS2 S not active setup time 30 20
tSHSL tCS S deselect time 40 25
tCHSH tCSH S active hold time 30 20
tCHSL S not active hold time 30 20
tCH(1)
1. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max).
tCLH Clock high time 40 25
tCL(1) tCLL Clock low time 40 25
tCLCH(2)
2. Value guaranteed by characterization, not 100% tested in production.
tRC Clock rise time 2 2
µs
tCHCL(2) tFC Clock fall time 2 2
tDVCH tDSU Data in setup time 10 10
ns
tCHDX tDH Data in hold time 10 10
tHHCH Clock low hold time after HOLD not active 30 25
tHLCH Clock low hold time after HOLD active 30 20
tCLHL Clock low set-up time before HOLD active 0 0
tCLHH
Clock low set-up time before HOLD not
active 00
tSHQZ(2) tDIS Output disable time 40 25
tCLQV(3)
3. tCLQV must be compatible with tCL (clock low time): if tSU is the Read setup time of the SPI bus master, tCL
must be equal to (or greater than) tCLQV+tSU.
tVClock low to output valid 40 25
tCLQX tHO Output hold time 0 0
tQLQH(2) tRO Output rise time 20 25
tQHQL(2) tFO Output fall time 20 25
tHHQV tLZ HOLD high to output valid 40 25
tHLQZ(2) tHZ HOLD low to output high-Z 40 25
tWtWC Write time 4 4 ms
DC and AC parameters M95M01-A125 M95M01-A145
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Figure 17. AC measurement I/O waveform
Figure 18. Serial input timing
Figure 19. Hold timing
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DocID023214 Rev 6 35/40
M95M01-A125 M95M01-A145 DC and AC parameters
39
Figure 20. Serial output timing
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Package mechanical data M95M01-A125 M95M01-A145
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9 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 21. SO8N – 8-lead plastic small outline, 150 mils body width, package outline
1. Drawing is not to scale.
Table 16. SO8N – 8-lead plastic small outline, 150 mils body width, package
mechanical data
Symbol
millimeters inches(1)
1. Values in inches are converted from mm and rounded to four decimal digits.
Typ. Min. Max. Typ. Min. Max.
A - - 1.75 - - 0.0689
A1 - 0.10 0.25 - 0.0039 0.0098
A2 - 1.25 - - 0.0492 -
b - 0.28 0.48 - 0.011 0.0189
c - 0.17 0.23 - 0.0067 0.0091
ccc - - 0.10 - - 0.0039
D 4.90 4.80 5.00 0.1929 0.189 0.1969
E 6.00 5.80 6.20 0.2362 0.2283 0.2441
E1 3.90 3.80 4.00 0.1535 0.1496 0.1575
e 1.27 - - 0.05 - -
h - 0.25 0.50 - 0.0098 0.0197
k-0°8°-0°8°
L - 0.40 1.27 - 0.0157 0.05
L1 1.04 - - 0.0409 - -
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DocID023214 Rev 6 37/40
M95M01-A125 M95M01-A145 Package mechanical data
39
Figure 22. TSSOP8 – 8-lead thin shrink small outline, package outline
1. Drawing is not to scale.
Table 17. TSSOP8 – 8-lead thin shrink small outline, package mechanical data
Symbol
millimeters inches(1)
1. Values in inches are converted from mm and rounded to four decimal digits.
Typ. Min. Max. Typ. Min. Max.
A - - 1.200 - - 0.0472
A1 - 0.050 0.150 - 0.0020 0.0059
A2 1.000 0.800 1.050 0.0394 0.0315 0.0413
b - 0.190 0.300 - 0.0075 0.0118
c - 0.090 0.200 - 0.0035 0.0079
CP - - 0.100 - - 0.0039
D 3.000 2.900 3.100 0.1181 0.1142 0.1220
e 0.650 - - 0.0256 - -
E 6.400 6.200 6.600 0.2520 0.2441 0.2598
E1 4.400 4.300 4.500 0.1732 0.1693 0.1772
L 0.600 0.450 0.750 0.0236 0.0177 0.0295
L1 1.000 - - 0.0394 - -
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Part numbering M95M01-A125 M95M01-A145
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10 Part numbering
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
Table 18. Ordering information scheme
Example: M95M01-D W DW 4 T P /K
Device type
M95 = SPI serial access EEPROM
Device function
M01-D = 1 Mbit (128 Kbytes) plus Identification Page
Operating voltage
W = VCC = 2.5 to 5.5 V
Package(1)
1. All packages are ECOPACK2® (RoHS compliant and free of brominated, chlorinated and antimony-oxide
flame retardants).
MN = SO8 (150 mils width)
DW = TSSOP8 (169 mils width)
Device grade
3 = –40 to 125 °C. Device tested with high reliability certified flow(2)
2. The high reliability certified flow (HRCF) is described in quality note QNEE9801. Please ask your nearest
ST sales office for a copy.
4 = –40 to 145 °C. Device tested with high reliability certified flow(2)
Option
blank = Tube packing
T = Tape and reel packing
Plating technology
P or G = ECOPACK2®
Process letter
/K = Manufacturing technology code
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M95M01-A125 M95M01-A145 Revision history
39
11 Revision history
Table 19. Document revision history
Date Revision Changes
06-Jun-2012 1 Initial release.
30-Jul-2012 2
–V
CC range R3 replaced with range W3
Max clock frequency defined as 16 MHz when VCC > 4.5 V inside
the [-40 °C / +85 °C] temperature range
14-Feb-2013 3
Removed UFDFPN8 (MLP8) package.
Updated VRES maximum value in Table 13: DC characteristics
(voltage range W, temperature range 4) and Table 14: DC
characteristics (voltage range W, temperature range 3).
Rephrased introduction of Section 3.5: Identification page and
information about Identification page in Section 6: Delivery state.
Deleted note(1) under Table 6: Instruction set.
10-Apr-2013 4
Document reformatted.
Document status changed from “Preliminary data” to “Production
data”.
Updated note (1) under Table 8: Absolute maximum ratings.
04-Feb-2014 5
Changed Data retention from “40 years at 55 °C” to “50 years at
125 °C” in Features.
Removed bullets in Section 4.2: Write Disable (WRDI) (refer to
Section : WEL bit).
Removed redundant sentence after Table 5: Device identification
bytes.
31-Oct-2014 6
Updated Note 2 below Table 8: Absolute maximum ratings
Updated Table 14: DC characteristics (voltage range W, temperature
range 3)
Updated Table 18: Ordering information scheme
M95M01-A125 M95M01-A145
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