CSD19502Q5B Datasheet by Texas Instruments

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VGS - Gate-to- Source Voltage (V)
RDS(on) - On-State Resistance (mΩ)
TC = 25°C, I D = 19A
TC = 125°C, I D = 19A
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Qg - Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
ID = 19A
VDS = 40V
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD19502Q5B
SLPS413B –DECEMBER 2013–REVISED MAY 2017
CSD19502Q5B 80 V N-Channel NexFET™ Power MOSFET
1
1 Features
1• Ultra-Low Qgand Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
SPACE
SPACE
Product Summary
TA= 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 80 V
QgGate Charge Total (10 V) 48 nC
Qgd Gate Charge Gate to Drain 8.6 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 3.8 mΩ
VGS = 10 V 3.4 mΩ
VGS(th) Threshold Voltage 2.7 V
.
Ordering Information(1)
Device Media Qty Package Ship
CSD19502Q5B 13-Inch Reel 2500 SON 5 x 6 mm
Plastic Package Tape and
Reel
CSD19502Q5BT 13-Inch Reel 250
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA= 25°C VALUE UNIT
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID
Continuous Drain Current (Package limited) 100
A
Continuous Drain Current (Silicon limited),
TC= 25°C 157
Continuous Drain Current(1) 17
IDM Pulsed Drain Current(2) 400 A
PD
Power Dissipation(1) 3.1 W
Power Dissipation, TC= 25°C 195
TJ,
Tstg
Operating Junction and
Storage Temperature Range –55 to 150 °C
EAS Avalanche Energy, single pulse
ID= 74 A, L = 0.1 mH, RG= 25 Ω274 mJ
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, pulse duration ≤100 µs, duty cycle ≤1%
RDS(on) vs VGS Gate Charge
l TEXAS INSTRUMENTS
2
CSD19502Q5B
SLPS413B –DECEMBER 2013–REVISED MAY 2017
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information.................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks............................................................... 7
6.4 Electrostatic Discharge Caution................................ 7
6.5 Glossary.................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5B Package Dimensions........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Pattern ................................. 9
7.4 Q5B Tape and Reel Information............................. 10
4 Revision History
Changes from Revision A (June 2014) to Revision B Page
• Added the Receiving Notification of Documentation Updates and Community Resources sections to Device and
Documentation Support. ........................................................................................................................................................ 7
• Changed the dimension between pads 3 and 4 from 0.028 inches: to 0.050 inches in the Recommended PCB
Pattern section diagram ......................................................................................................................................................... 9
Changes from Original (December 2013) to Revision A Page
• Added small reel option to ordering information table. .......................................................................................................... 1
• Increased silicon limit for continuous drain current to 157 A. ................................................................................................ 1
• Increased max pulsed current to 400 A. ............................................................................................................................... 1
• Added max power rating when the case temperature is held to 25°C. ................................................................................. 1
• Updated pulsed current conditions to specify duty cycle ≤1%, pulse duration ≤100 µs, and Max RθJC = 0.8ºC/W. ........... 1
• Updated Figure 10. ................................................................................................................................................................ 6
• Updated mechanical drawing. ............................................................................................................................................... 8
l TEXAS INSTRUMENTS
3
CSD19502Q5B
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SLPS413B –DECEMBER 2013–REVISED MAY 2017
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5 Specifications
5.1 Electrical Characteristics
(TA= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID= 250 μA 80 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 64 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID= 250 μA 2.2 2.7 3.3 V
RDS(on) Drain-to-Source On Resistance VGS = 6 V, ID= 19 A 3.8 4.8 mΩ
VGS = 10 V, ID= 19 A 3.4 4.1 mΩ
gfs Transconductance VDS = 8 V, ID= 19 A 88 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0 V, VDS = 40 V, ƒ = 1 MHz
3750 4870 pF
Coss Output Capacitance 925 1202 pF
Crss Reverse Transfer Capacitance 17 22 pF
RGSeries Gate Resistance 1.2 2.4 Ω
QgGate Charge Total (10 V)
VDS = 40 V, ID= 19 A
48 62 nC
Qgd Gate Charge Gate to Drain 8.6 nC
Qgs Gate Charge Gate to Source 14 nC
Qg(th) Gate Charge at Vth 10 nC
Qoss Output Charge VDS = 40 V, VGS = 0 V 130 nC
td(on) Turn On Delay Time
VDS = 40 V, VGS = 10 V,
IDS = 19 A, RG= 0 Ω
8 ns
trRise Time 6 ns
td(off) Turn Off Delay Time 22 ns
tfFall Time 7 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 19 A, VGS = 0 V 0.8 1 V
Qrr Reverse Recovery Charge VDS= 40 V, IF= 19 A,
di/dt = 300 A/μs
275 nC
trr Reverse Recovery Time 72 ns
(1) RθJC is determined with the device mounted on a 1-inch2(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches (3.81-
cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2(6.45-cm2), 2-oz. (0.071-mm thick) Cu.
5.2 Thermal Information
(TA= 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance(1) 0.8 °C/W
RθJA Junction-to-Ambient Thermal Resistance (1)(2) 50
l TEXAS INSTRUMENTS ZpJC] - Nnvmallzed Thermal lmpadanca 01 0‘01 0.001 10-: — 5mg: Pulse — 29s —1% —5% 100a Im 10!“ c, » Pulse Duration (5) an: Source w: Source ; 1 $0 ‘9 ? a a 3 3 a" fl m m 9. $1 z E z E 2 1 z. > x 3 x: H x 2 an 11 um»: a 1mm 10 .14 Max Rmc = o.a°c¢w AT,= P '2mw‘ Rm,c 100m
GATE Source
DRAIN
N-Chan5x6QFNTTAMAXRev3
M0137-01
GATE Source
DRAIN
N-Chan5x6QFNTTAMINRev3
M0137-02
4
CSD19502Q5B
SLPS413B –DECEMBER 2013–REVISED MAY 2017
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Max RθJA = 50°C/W
when mounted on
1 inch2(6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Max RθJA = 125°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
5.3 Typical MOSFET Characteristics
(TA= 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
l TEXAS INSTRUMENTS us mm as am us mm 0 mm as am
5
CSD19502Q5B
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Typical MOSFET Characteristics (continued)
(TA= 25°C unless otherwise stated)
Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics
Figure 4. Gate Charge Figure 5. Capacitance
Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage
l TEXAS INSTRUMENTS :2 mm 5D mm as am TAV mm
6
CSD19502Q5B
SLPS413B –DECEMBER 2013–REVISED MAY 2017
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Typical MOSFET Characteristics (continued)
(TA= 25°C unless otherwise stated)
Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage
Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
l TEXAS INSTRUMENTS Am
7
CSD19502Q5B
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SLPS413B –DECEMBER 2013–REVISED MAY 2017
Product Folder Links: CSD19502Q5B
Submit Documentation FeedbackCopyright © 2013–2017, Texas Instruments Incorporated
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
6.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.5 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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Top View
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Side View Bottom View
Front View
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CSD19502Q5B
SLPS413B –DECEMBER 2013–REVISED MAY 2017
www.ti.com
Product Folder Links: CSD19502Q5B
Submit Documentation Feedback Copyright © 2013–2017, Texas Instruments Incorporated
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Q5B Package Dimensions
DIM MILLIMETERS
MIN NOM MAX
A 0.80 1.00 1.05
b 0.36 0.41 0.46
c 0.15 0.20 0.25
c1 0.15 0.20 0.25
c2 0.20 0.25 0.30
D1 4.90 5.00 5.10
D2 4.12 4.22 4.32
D3 3.90 4.00 4.10
d 0.20 0.25 0.30
d1 0.085 TYP
d2 0.319 0.369 0.419
E 4.90 5.00 5.10
E1 5.90 6.00 6.10
E2 3.48 3.58 3.68
e 1.27 TYP
H 0.36 0.46 0.56
L 0.46 0.56 0.66
L1 0.57 0.67 0.77
θ0° — —
K 1.40 TYP
l TEXAS INSTRUMENTS (0.175) 4— 4.440 —> (0.023) (0.043) (0.023) * * “-590 E a «1.100 0.110 to Lf f 1.270 (0.050) SYM 0 7s _ _ (4 20) Q + 0.560 (0.022) f 00 ‘— 0.710(0028) (0.136) (0.039) (0.054) 4—3456 —>| 0.98447 —> (372 4— »<—‘ fl="" +="" a="" i="" ‘="" t="" 1="" 7="" ,="" +="" a="" i="" f="" r="" ‘1="" 0="" iv="" —‘—"’="" ‘—="" +="" —=""> <—>
4.318 (0.170)
2.186
6.586
0.350
(0.014)
1.294
x 8
(0.051)
0.746 x 8
(0.029)
(0.259)
1.072
(0.042)
1.270
0.562 x 4
(0.022)
0.300
(0.012)
(0.086)
(0.050)
1.525
(0.060)
0.508
x4
(0.020)
1.270 (0.050)
0.286
(0.011)
0.766
(0.030)
9
CSD19502Q5B
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7.2 Recommended PCB Pattern
For recommended circuit layout for PCB designs, see application note SLPA005 –Reducing Ringing Through
PCB Layout Techniques.
7.3 Recommended Stencil Pattern
L 4, $$$/$$$$ <74» gb="" $="" 6%="" va.="" ’="" +="" *="">
Ø 1.50 +0.10
–0.00
4.00 ±0.10 (See Note 1)
1.75 ±0.10
R 0.30 TYP
Ø 1.50 MIN
A0
K0
0.30 ±0.05
R 0.30 MAX
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
M0138-01
2.00 ±0.05
8.00 ±0.10
B0
12.00 ±0.30
5.50 ±0.05
10
CSD19502Q5B
SLPS413B –DECEMBER 2013–REVISED MAY 2017
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7.4 Q5B Tape and Reel Information
Notes:
1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified).
5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket.
I TEXAS INSTRUMENTS Samples Samples
PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
CSD19502Q5B ACTIVE VSON-CLIP DNK 8 2500 RoHS-Exempt
& Green SN Level-1-260C-UNLIM -55 to 150 CSD19502
CSD19502Q5BT ACTIVE VSON-CLIP DNK 8 250 RoHS-Exempt
& Green SN Level-1-260C-UNLIM -55 to 150 CSD19502
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS
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