VS-6F(R) Series Datasheet by Vishay General Semiconductor - Diodes Division

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VS-6F(R) Series
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-18 1Document Number: 93519
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Recovery Diodes,
(Stud Version), 6 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• Battery charges
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IF(AV) 6 A
Package DO-4 (DO-203AA)
Circuit configuration Single
DO-4 (DO-203AA)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
6A
TC160 °C
IF(RMS) 9.5 A
IFSM
50 Hz 159 A
60 Hz 167
I2t50 Hz 134 A2s
60 Hz 141
VRRM Range 100 to 1200 V
TJ-65 to +175 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 175 °C
mA
VS-6F(R)
10 100 150
12
20 200 275
40 400 500
60 600 725
80 800 950
100 1000 1200
120 1200 1400
VISHAY. DwodesAmencasmwshaymm DwodesAswamwshaymm DwodesEuvogeQlehamcom www.v\shay,com/doc?91000
VS-6F(R) Series
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-18 2Document Number: 93519
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° conduction, half sine wave 6A
160 °C
Maximum RMS forward current IF(RMS) 9.5 A
Maximum peak, one cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ =
TJ maximum
159
A
t = 8.3 ms 167
t = 10 ms 100 % VRRM
reapplied
134
t = 8.3 ms 141
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
127
A2s
t = 8.3 ms 116
t = 10 ms 100 % VRRM
reapplied
90
t = 8.3 ms 82
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1270 A2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.63 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.86
Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 15.7 m
High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 5.6
Maximum forward voltage drop VFM Ipk = 19 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.10 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ-65 to +175 °C
Maximum storage temperature range TStg -65 to +200
Maximum thermal resistance,
junction to case RthJC DC operation 2.5
K/W
Maximum thermal resistance,
case to heat sink RthCS Mounting surface, smooth, flat and greased 0.5
Mounting torque, ± 10 % Lubricated threads
(Not lubricated threads)
1.2
(1.5)
N · m
(lbf · in)
Approximate weight 7g
0.25 oz.
Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.34 0.29
TJ = TJ maximum K/W
120° 0.44 0.48
90° 0.57 0.63
60° 0.85 0.88
30° 1.37 1.39
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VS-6F(R) Series
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-18 3Document Number: 93519
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
155
160
165
170
175
01234567
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduct ion Angle
Average Forward Current (A)
6F(R) Series
R (DC) = 2.5 K/ W
thJC
155
160
165
170
175
0246810
DC
30°
60°
90°
120°
180°
Maxi mu m Allowable Case Temper ature (°C)
Conduct io n Per iod
Average Forward Current (A)
6F(R) Series
R (DC) = 2.5 K/W
thJC
0 255075100
Maximum Allowable Ambient Temperature (°C)
15K/W
R=20K/W-DeltaR
thSA
30K/W
40K
/W
50K/W
0
1
2
3
4
5
6
0123456
Average Forward Current (A)
RMS Limi t
Maximum Average Forward Power Loss (W)
Conduct ion Angl e
180°
120°
90°
60°
30°
6F(R) Series
T = 175°C
J
0 255075100
Maxi mum Al lowable Ambient Temperature (°C)
20K/W
30K/W
40K/W
50K/W
R=15K/W-DeltaR
1
0K/W
thS
A
0
1
2
3
4
5
6
7
8
0246810
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Period
6F(R) Series
T = 175°C
J
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VS-6F(R) Series
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-18 4Document Number: 93519
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
40
50
60
70
80
90
100
110
120
130
140
150
110100
Peak Half Sine Wave For ward Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Initi al T = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6F(R) Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
J
30
40
50
60
70
80
90
100
110
120
130
140
150
160
0.01 0.1 1
Pea k Hal f Sine Wave Forward Current (A)
Pulse Train Duration (s)
6F(R) Series
Initial T = 175°C
No Voltage Reapplied
Rated V Reapplied
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
RRM
J
1
10
100
1000
00.511.522.5
T = 25°C
J
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
6F(R) Series
T = 175°C
J
0.1
1
10
0.001 0. 01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
6F(R) Series
Steady State Value
R = 2 .5 K/W
(DC Operation)
thJC
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95311
5
- Voltage code x 10 = VRRM (see Voltage Ratings table)
- Current rating: code = IF(AV)
4
2
- F = standard device
3
- None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
None = stud base DO-4 (DO-203AA) 10-32UNF-2A
M = stud base DO-4 (DO-203AA) M5 x 0.8
6
-
Device code
5 61 32 4
6VS- F R 120 M
1- Vishay Semiconductors product
— VISHAYn V Outline Dimensions
Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 30-Jun-08 1
DO-203AA (DO-4)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
— VISHAY. V
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Revision: 09-Jul-2021 1Document Number: 91000
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