SIA441DJ-T1-GE3 Datasheet by Vishay Siliconix

— VISHAYm V ROHS cuwmm HALOGEN FREE P»ChanneI MOSFET ._I__l SIAAMDJ-TI-GES {Lead (Pm-nee and HaIngen-Ivee) www Isnay cam/doc773257 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCIAIMERS‘ SFI FORTH AT www.mshaycam/dafiSIOOO
Vishay Siliconix
SiA441DJ
Document Number: 63277
S11-1183-Rev. A, 13-Jun-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 40 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable and Consumer Devices
- Load Switch
- DC/DC Converter
- Motor Drive
- High-Side Switch in Half- and Full-Bridge Converters
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A) Qg (Typ.)
- 40
0.047 at VGS = - 10 V - 12a
11 nC
0.065 at VGS = - 4.5 V - 12a
PowerPAK SC-70-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
2.05 mm
2.05 mm
S
G
D
P-Channel MOSFET
Marking Code
X X X
B O X
Lot Traceability
and Date code
Part # code
Ordering Information:
SiA441DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 12a
A
TC = 70 °C - 12a
TA = 25 °C - 6.6b, c
TA = 70 °C - 5.3b, c
Pulsed Drain Current (t = 300 µs) IDM - 30
Continuous Source-Drain Diode Current TC = 25 °C IS- 12a
TA = 25 °C - 2.9b, c
Avalanche Current L = 0.1 mH IAS 13
Single Pulse Avalanche Energy EAS 8.5 mJ
Maximum Power Dissipation
TC = 25 °C
PD
19
W
TC = 70 °C 12
TA = 25 °C 3.5b, c
TA = 70 °C 2.2b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 28 36 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5
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Document Number: 63277
S11-1183-Rev. A, 13-Jun-11
Vishay Siliconix
SiA441DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 µA - 40 V
VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 29 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.3
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.2 - 2.2 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 40 V, VGS = 0 V - 1 µA
VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS ≤ - 5 V, VGS = - 10 V - 20 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 4.4 A 0.039 0.047 Ω
VGS = - 4.5 V, ID = - 3.7 A 0.053 0.065
Forward Transconductanceagfs VDS = - 15 V, ID = - 4.4 A 13 S
Dynamicb
Input Capacitance Ciss
VDS = - 20 V, VGS = 0 V, f = 1 MHz
890
pFOutput Capacitance Coss 115
Reverse Transfer Capacitance Crss 95
Total Gate Charge Qg
VDS = - 20 V, VGS = - 10 V, ID = - 4.9 A 22 35
nC
VDS = - 20 V, VGS = - 4.5 V, ID = - 4.9 A
11 17
Gate-Source Charge Qgs 2.9
Gate-Drain Charge Qgd 5.2
Gate Resistance Rgf = 1 MHz 1.4 7.2 14.4 Ω
Tur n - O n D e l ay Time td(on)
VDD = - 20 V, RL = 5.1 Ω
ID ≅ - 3.9 A, VGEN = - 4.5 V, Rg = 1 Ω
40 80
ns
Rise Time tr30 60
Turn-Off Delay Time td(off) 30 60
Fall Time tf12 25
Tur n - O n D e l ay T im e td(on)
VDD = - 20 V, RL = 5.1 Ω
ID ≅ - 3.9 A, VGEN = - 10 V, Rg = 1 Ω
715
Rise Time tr12 25
Turn-Off Delay Time td(off) 30 60
Fall Time tf10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 12 A
Pulse Diode Forward Current ISM - 30
Body Diode Voltage VSD IS = - 3.9 A, VGS = 0 V - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 3.9 A, dI/dt = 100 A/µs, TJ = 25 °C
25 50 ns
Body Diode Reverse Recovery Charge Qrr 22 50 nC
Reverse Recovery Fall Time ta17 ns
Reverse Recovery Rise Time tb8
/ ; // / K m/ ” \\ /2 / THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCUIMERS‘ SET FORTH AT www.mshaycom/docwmoo
Document Number: 63277
S11-1183-Rev. A, 13-Jun-11
www.vishay.com
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Vishay Siliconix
SiA441DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 4 V
V
GS
= 10 V thru 5 V
V
GS
= 3 V
0.02
0.04
0.06
0.08
0.10
0.12
0 5 10 15 20 25 30
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
V
GS
= 4.5 V
VGS = 10 V
0
2
4
6
8
10
0 5 10 15 20 25
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VDS = 32 V
VDS = 20 V
VDS = 10 V
ID= 4.9 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
C
0
300
600
900
1200
1500
0 8 16 24 32 40
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V
I
D
= 4.4 A
V
GS
= 10 V
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Document Number: 63277
S11-1183-Rev. A, 13-Jun-11
Vishay Siliconix
SiA441DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ= 150 °C
TJ= 25 °C
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0246810
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ= 125 °C
T
J
= 25 °C
ID= 4.4 A
Power (W)
Time (s)
10 10000.10.010.001 1001
0
5
10
15
20
25
30
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.1 1 10 100
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
10 s
100 μs
100 ms
Limited by R
DS(on)
*
1 ms
TA= 25 °C
BVDSS Limited
10 ms
1 s
DC
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Document Number: 63277
S11-1183-Rev. A, 13-Jun-11
www.vishay.com
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Vishay Siliconix
SiA441DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
4
8
12
16
20
0 25 50 75 100 125 150
ID- Drain Current (A)
TC- Case Temperature (°C)
Package Limited
Power Derating
0
5
10
15
20
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Dissipation (W)
VISHAY. www vrshai Cum/Eflg753277 THE PRODUCTS DESCR‘BED HEREIN AND TH‘S DOCUMENT ARE SUBJECT TO SPECIF‘C D‘SCLAIMERS, SET FORTH AT www,v\shay.com/dac79|000
www.vishay.com
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Document Number: 63277
S11-1183-Rev. A, 13-Jun-11
Vishay Siliconix
SiA441DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63277.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
Duty Cycle = 0.5
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 65 C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
4. Surface Mounted
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
4. Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
10-3 10-2
10-4
1
0.1
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
0.05
10-1
VISHAYE
Vishay Siliconix
Package Information
Document Number: 73001
06-Aug-07
www.vishay.com
1
PowerPAK® SC70-6L
DIM
SINGLE PAD DUAL PAD
MILLIMETERS INCHES MILLIMETERS INCHES
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
b0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010
D1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D2 0.135 0.235 0.335 0.005 0.009 0.013
E1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E2 0.345 0.395 0.445 0.014 0.016 0.018
E3 0.425 0.475 0.525 0.017 0.019 0.021
e0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
K0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP
K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP
K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP
K3 0.225 TYP 0.009 TYP
K4 0.355 TYP 0.014 TYP
L0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015
T0.05 0.10 0.15 0.002 0.004 0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
E2
BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
PIN1
PIN6 PIN5
PIN4
PIN2 PIN3
A
Z
DETAIL Z
z
D
E
K1
K2
C
A1
K3K2 K2
e b
b e
PIN6 PIN5 PIN4
PIN1 PIN3
PIN2
E1
E1
E1
L
L
K4
K
K
K
D1 D2 D1 D1
K1
E3
— VISHAY..
Application Note 826
Vishay Siliconix
Document Number: 70486 www.vishay.com
Revision: 21-Jan-08 11
APPLICATION NOTE
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
1
0.300 (0.012)
0.350 (0.014)
2.200 (0.087) 1.500 (0.059)
0.650 (0.026)
0.950 (0.037)
0.300 (0.012)
0.355 (0.014)
0.235 (0.009)
0.475 (0.019)
0.870 (0.034)
0.275 (0.011)
0.350 (0.014)
0.550 (0.022)
0.650 (0.026)
Dimensions in mm/(Inches)
Return to Index
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Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
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