MSMCxLCE6.5A - MXLSMCxLCE170Ae3 Datasheet by Microchip Technology

I O Microsemi ’M fi ure 6 hllg //www,micrasemi.com High Reliabllily Ug-Screened Plasma Products Ponfolio Qart nomenclature Also available in E SMCG J LCE6.5 — SMCG J LCE170A83 IE MLCE6.5— MLcanaAaa MicroNole 130 M50 — Lawrence dale—Shem MSC — Ireland www. microsemi.com
RF01002, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 1 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
Available 1500 Watt Low Capacitance Surface
Mount Transient Voltage Suppressor
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
This high-reliability surface mount Transient Voltage Suppressor (TVS) product family includes a rectifier
diode in series with and in the opposite direction to the primary TVS protection diode. The circuit being
protected sees only the rectifier diode's low 100 pF capacitance. They are available in either a DO-
215AB (gull-wing) or DO-214AB (J-bend) package and RoHS compliant versions are available. The low
capacitance of these TVS devices allows them to be applied to the protection of high-frequency signal
and communication lines in inductive switching environments or systems exposed to the secondary
effects of lightning per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics.
They also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability
is required, two of these low capacitance TVS devices may be used in parallel and opposite directions
(anti-parallel) for complete ac protection (figure 6).
DO-215AB
(SMCG) Package
DO-214AB
(SMCJ) Package
NOTE: All SMC series are
equivalent to prior SMM package
identifications.
Also available in:
Commercial grade
SMCG(J)LCE6.5 –
SMCG(J)LCE170Ae3
Case 1 package
(axial-leaded)
MLCE6.5 – MLCE170Ae3
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Available in standoff voltage range of 6.5 to 170 V.
• Low capacitance of 100 pF or less.
• Molding compound flammability rating: UL94V-O.
• Two different terminations available in C-bend (modified J-bend with DO-214AB) or Gull-wing
(DO-215AB).
• Screening available in reference to MIL-PRF-19500. Refer to High Reliability Up-Screened Plastic
Products Portfolio for more details on the screening options.
(See part nomenclature for all available options.)
• RoHS compliant versions available.
APPLICATIONS / BENEFITS
• 1500 watts peak pulse power at 10/1000 µs.
• Low capacitance for high frequency data line protection to 1 MHz.
• Protection for aircraft fast data rate lines up to level 5 waveform 4 and level 2 waveform 5A in
RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC 429,
Part 1, par 2.4.1.1).
• IEC61000-4-2 ESD 15 kV (air), 8 kV (contact).
• IEC61000-4-5 (lightning) as further detailed in LCE6.5 thru LCE170A data sheet.
• T1/E1 line cards.
• Base stations, WAN & XDSL interfaces.
• CSU/DSU equipment.
I O Microsemi figures1 2 ands “agglicatio n schematics Package Dimensions Rel iahilily Level RoHS Comgliance +I-5%Tolerance Level High Reliability UQ-Screened Plastic Reverse Stand-Oil Voltage Products Portfolio Electrical Characteristics Surlace Mount Package Encapsulated Plastic Package 1500 w Power Level Low Capacitance Lead Form
RF01002, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 2 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
MAXIMUM RATINGS @ 25 ºC unless otherwise stated
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +150
ºC
Thermal Resistance Junction-to-Lead (1)
RӨJL
20
ºC/W
Peak Pulse Power dissipation @ 25 ºC (at 10/1000 µs,
see figures 1, 2, and 3)
(2)
P
PP
1500
W
Clamping Factor
@ Full Rated Power
@ 50 % Rated Power
CF
1.4
1.30
tclamping
< 5x10-9
s
T
L
= +50 ºC
P
M(AV)
5.0
W
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. Typical junction to lead (tab) at mounting plane.
2. With a repetition rate of 0.01% or less. When pulse testing, do not pulse in opposite direction (see “application schematics” section herein
and figures 5 & 6 for further protection in both directions.)
MECHANICAL and PACKAGING
• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
• TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026.
• MARKING: Part number with abbreviated prefix (MCLC6.5A, MCLC6.5Ae3, MCLC33, MCLC33e3, etc.).
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-481-B with 16 mm tape (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: Approximately 0.25 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
M SM C G LC E 6.5 A e3
Reliability Level*
M
MA
MX
MXL
*(see
High Reliability
Up-Screened Plastic
Products Portfolio)
Surface Mount
Package
1500 W Power Level
Lead Form
G = Gull-wing
J = J-bend
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
+/-5%Tolerance Level
Reverse Stand-Off Voltage
(see Electrical Characteristics
table)
Encapsulated Plastic Package
Low Capacitance
| OMicrosemi —
RF01002, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 3 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
SYMBOLS & DEFINITIONS
Symbol
Definition
I(BR)
Breakdown Current: The current used for measuring breakdown voltage V(BR) .
ID
Standby Current: The current at the rated standoff voltage VWM.
IF
Forward Current: The forward current dc value, no alternating component.
IO
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle.
IPP
Peak Impulse Current: The peak current during the impulse.
PPP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
VC
Clamping Voltage: The maximum clamping voltage at specified I
PP
(peak pulse current) at the specified pulse
conditions.
V(BR)
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is
also referred to as the standoff voltage.
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated
Part Number
Reverse
Stand-Off
Voltage
VWM
Volts
Breakdown Voltage
V(BR) @ I(BR)
Volts
Maximum
Reverse
Leakage
@VWM
ID
µA
Maximum
Clamping
Voltage
@IPP
VC
Volts
Maximum
Peak Pulse
Current IPP
@10/1000
Amps
Maximum
Capacitance
@ 0 Volts,
f = 1 MHz
pF
Working
Inverse
Blocking
Voltage
VWIB
Volts
Inverse
Blocking
Leakage
Current
IIB
µA
Peak
Inverse
Blocking
Voltage
VPIB
Volts
Gull-Wing
J-Bend
MIN
MAX
mA
MSMCGLCE6.5A
MSMCGLCE7.0A
MSMCJLCE6.5A
MSMCJLCE7.0A
6.5
7.0
7.22
7.78
7.98
8.60
10
10
1000
500
11.2
12.0
100
100
100
100
75
75
10
10
100
100
MSMCGLCE7.5A
MSMCGLCE8.0A
MSMCJLCE7.5A
MSMCJLCE8.0A
7.5
8.0
8.33
8.89
10.2
9.83
10
1
250
100
12.9
13.6
100
100
100
100
75
75
10
10
100
100
MSMCGLCE8.5A
MSMCGLCE9.0A
MSMCJLCE8.5A
MSMCJLCE9.0A
8.5
9.0
9.44
10.0
10.4
11.1
1
1
50
10
14.4
15.4
100
97
100
100
75
75
10
10
100
100
MSMCGLCE10A
MSMCGLCE11A
MSMCJLCE10A
MSMCJLCE11A
10
11
11.1
12.2
12.3
13.5
1
1
5
5
17.0
18.2
88
82
100
100
75
75
10
10
100
100
MSMCGLCE12A
MSMCGLCE13A
MSMCJLCE12A
MSMCJLCE13A
12
13
13.3
14.4
14.7
15.9
1
1
5
5
19.9
21.5
75
70
100
100
75
75
10
10
100
100
MSMCGLCE14A
MSMCGLCE15A
MSMCJLCE14A
MSMCJLCE15A
14
15
15.6
16.7
17.2
18.5
1
1
5
5
23.2
24.4
65
61
100
100
75
75
10
10
100
100
MSMCGLCE16A
MSMCGLCE17A
MSMCJLCE16A
MSMCJLCE17A
16
17
17.8
18.9
19.7
20.9
1
1
5
5
26.0
27.6
57
54
100
100
75
75
10
10
100
100
MSMCGLCE18A
MSMCGLCE20A
MSMCJLCE18A
MSMCJLCE20A
18
20
20.0
22.2
22.1
24.5
1
1
5
5
29.2
32.4
51
46
100
100
75
75
10
10
100
100
MSMCGLCE22A
MSMCGLCE24A
MSMCJLCE22A
MSMCJLCE24A
22
24
24.4
26.7
26.9
29.5
1
1
5
5
35.5
38.9
42
39
100
100
75
75
10
10
100
100
MSMCGLCE26A
MSMCGLCE28A
MSMCJLCE26A
MSMCJLCE28A
26
28
28.9
31.1
31.9
34.4
1
1
5
5
42.1
45.5
36
33
100
100
75
75
10
10
100
100
MSMCGLCE30A
MSMCGLCE33A
MSMCJLCE30A
MSMCJLCE33A
30
33
33.3
36.7
36.8
40.6
1
1
5
5
48.4
53.3
31
28.1
100
100
75
75
10
10
100
100
MSMCGLCE36A
MSMCGLCE40A
MSMCJLCE36A
MSMCJLCE40A
36
40
40.0
44.4
44.2
49.1
1
1
5
5
58.1
64.5
25.8
23.3
100
100
75
75
10
10
100
100
MSMCGLCE43A
MSMCGLCE45A
MSMCJLCE43A
MSMCJLCE45A
43
45
47.8
50.0
52.8
55.3
1
1
5
5
69.4
72.7
21.6
20.6
100
100
150
150
10
10
200
200
MSMCGLCE48A
MSMCGLCE51A
MSMCJLCE48A
MSMCJLCE51A
48
51
53.3
56.7
58.9
62.7
1
1
5
5
77.4
82.4
19.4
18.2
100
100
150
150
10
10
200
200
MSMCGLCE54A
MSMCGLCE58A
MSMCJLCE54A
MSMCJLCE58A
54
58
60.0
64.4
66.3
71.2
1
1
5
5
87.1
93.6
17.2
16.0
100
100
150
150
10
10
200
200
MSMCGLCE60A
MSMCGLCE64A
MSMCJLCE60A
MSMCJLCE64A
60
64
66.7
71.1
73.7
78.6
1
1
5
5
96.8
103
15.5
14.6
90
90
150
150
10
10
200
200
MSMCGLCE70A
MSMCGLCE75A
MSMCJLCE70A
MSMCJLCE75A
70
75
77.8
83.3
85.0
92.1
1
1
5
5
113
121
13.3
12.4
90
90
150
150
10
10
200
200
MSMCGLCE80A
MSMCGLCE90A
MSMCJLCE80A
MSMCJLCE90A
80
90
88.7
100
98.0
111
1
1
5
5
129
146
11.6
10.3
90
90
150
300
10
10
200
200
MSMCGLCE100A
MSMCGLCE110A
MSMCJLCE100A
MSMCJLCE110A
100
110
111
122
123
135
1
1
5
5
162
178
9.3
8.4
90
90
300
300
10
10
200
400
MSMCGLCE120A
MSMCGLCE130A
MSMCJLCE120A
MSMCJLCE130A
120
130
133
144
147
159
1
1
5
5
193
209
7.8
7.2
90
90
300
300
10
10
400
400
MSMCGLCE150A
MSMCGLCE160A
MSMCJLCE150A
MSMCJLCE160A
150
160
167
178
185
197
1
1
5
5
243
259
6.2
5.8
90
90
300
300
10
10
400
400
MSMCGLCE170A
MSMCJLCE170A
170
189
209
1
5
275
5.4
90
300
10
400
NOTE 1: TVS are normally selected according to the reverse standoff voltage” (VWM) which should be equal to or greater than the dc or peak operating
voltage level.
I O Microsemi 100 (Waveform - See Figure 2) Non-repetitive 1D (Ppp) — Peak Pulse Power - kW .100 ns 1115 10 vs 100 vs 1 ms 10 ms Peak Pulse Power vs. Pulse Time 100% Peak Fu‘se Puwer | ‘ /(Smgle Pulse) —>.<—t ii="" 75="" 100="" \.="" \="" peak="" value="" lpp="" so="" all="" value="" '9;="" 50="" 25="" 7="" average="" fuwev="" 1dx1000="" avercrm/="" \="" as="" fiefinedlby="" r.e.xa="" o="" d="" 1="" 2="" 3="" 0="" 50="" 100="" 1="" 50="" 200="" pulse="" waveform="" derating="" curve="">
RF01002, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 4 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
GRAPHS
tp – Pulse Time – sec
FIGURE 1
Peak Pulse Power vs. Pulse Time
t – Time (msec) TL Lead Temperature oC
FIGURE 2 FIGURE 3
Pulse Waveform Derating Curve
I
PP
– Peak Pulse Current - % I
PP
Test wave form
parameters
tr = 10
µ
sec.
tp = 1000 µsec.
Peak Pulse Power (P
PP
) or continuous
Power in Percent of 25
o
C Rating
(PPP) – Peak Pulse Power - kW
, , , , W; + OUT ZS § - - , A moor: 'N +
RF01002, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 5 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
APPLICATION SCHEMATICS
The TVS low capacitance device configuration is shown in figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in figure 5. In applications where
random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and
also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher
reverse voltage rating than the TVS clamping voltage VC. The Microsemi recommended rectifier part number for the application in
figure 5 is the “SMBJLCR80” or “SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS
devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each
rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in figure 5 and 6 will both result in
twice the capacitance of figure 4.
FIGURE 4 FIGURE 5 FIGURE 6
TVS with internal low Optional Unidirectional Optional Bidirectional
capacitance rectifier diode configuration (TVS and configuration (two TVS
separate rectifier diode) devices in anti-parallel)
in parallel)
.115 .121 2.92 3.07 .380 .400 9.65 10.16 .025 .040 0.635 1.016 5.59 6.22
RF01002, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 6 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
PACKAGE DIMENSIONS
NOTES: Dimension “E” exceeds the JEDEC outline as shown.
Typical Standoff Height: 0.004” – 0.008” (0.1 mm – 0.2 mm).
NOTES: Dimension “E” exceeds the JEDEC outline in height as shown.
Typical Standoff Height: 0.004” – 0.008” (0.1 mm – 0.2 mm).
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
.115
.121
2.92
3.07
B
.260
.280
6.60
7.11
C
.220
.245
5.59
6.22
E
.077
.110
1.95
2.80
F
.380
.400
9.65
10.16
K
.025
.040
0.635
1.016
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
.115
.121
2.92
3.07
B
.260
.280
6.60
7.11
C
.220
.245
5.59
6.22
D
.305
.320
7.75
8.13
E
.077
.110
1.95
2.80
L
.030
.060
.760
1.52
SMCJ (DO-214AB)
SMCG (DO-215AB)
RF01002, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 7 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
PAD LAYOUT
SMCG (DO-215AB)
Ltr
Inch
Millimeters
A
.510
12.95
B
.110
2.79
C
.150
3.81
SMCJ (DO-214AB)
Ltr
Inch
Millimeters
A
.390
9.90
B
.110
2.79
C
.150
3.81