STD26P3LLH6 Datasheet by STMicroelectronics

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This is information on a product in full production.
February 2014 DocID023574 Rev 5 1/16
STD26P3LLH6
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™
Power MOSFET in a DPAK package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
R
DS(on)
* Q
g
industry benchmark
Extremely low on-resistance R
DS(on)
High avalanche ruggedness
Low gate input resistance
Applications
Switching applications
LCC converters, resonant converters
Description
This device is a P-channel Power MOSFET
developed using the 6
th
generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R
DS(on)
in all packages
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
1
3
TAB
2
DPAK
D(2 or TAB)
G(1)
S(3) AM11258v1
Order code V
DSS
R
DS(on)
max I
D
P
TOT
STD26P3LLH6 30 V 0.030 Ω
(1)
1. @ V
GS
= 10 V
12 A 40 W
Table 1. Device summary
Order code Marking Package Packaging
STD26P3LLH6 26P3LLH6 DPAK Tape and reel
www.st.com
Contents STD26P3LLH6
2/16 DocID023574 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID023574 Rev 5 3/16
STD26P3LLH6 Electrical ratings
16
1 Electrical ratings
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 30 V
V
GS
Gate-source voltage ±20 V
I
D (1)
1. Limited by wire bonding.
Drain current (continuous) at T
C
= 25 °C 12 A
I
D (1)
Drain current (continuous) at T
C
= 100 °C 8.5 A
I
DM (1)(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 48 A
P
TOT (1)
Total dissipation at T
C
= 25 °C 40 W
T
stg
Storage temperature -55 to 175 °C
T
j
Max. operating junction temperature 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 3.75 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
E
AS
Single pulse avalanche energy
(starting T
J
=25 °C, I
D
=6 A, I
AS
=12 A, V
DD
=25 V,
V
gs
=10 V)
350 mJ
Electrical characteristics STD26P3LLH6
4/16 DocID023574 Rev 5
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
Table 5. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
Voltage I
D
= 250 μA, V
GS
= 0 30 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 30 V 1 μA
V
DS
= 30 V, Tc = 125 °C 10 μA
I
GSS
Gate body leakage current V
GS
= ± 20 V, (V
DS
= 0)
±
100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μA1 2.5V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 6 A 0.024 0.03 Ω
V
GS
= 4.5 V, I
D
= 6 A 0.038 0.045 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 25 V, f=1 MHz,
V
GS
= 0
- 1450 - pF
C
oss
Output capacitance - 178 - pF
C
rss
Reverse transfer
capacitance -120-pF
Q
g
Total gate charge V
DD
= 24 V, I
D
= 12 A
V
GS
= 4.5 V
(see Figure 14)
-12-nC
Q
gs
Gate-source charge - 4.4 - nC
Q
gd
Gate-drain charge - 5 - nC
R
g
Gate input resistance
f = 1 MHz, gate DC
Bias = 0,
test signal level = 20 mV,
I
D
= 0
-1.8 -Ω
DocID023574 Rev 5 5/16
STD26P3LLH6 Electrical characteristics
16
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
Table 7. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 24 V, I
D
= 1.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13)
-15 - ns
t
r
Rise time - 15 - ns
t
d(off)
Turn-off delay time - 24 - ns
t
f
Fall time - 21 - ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 12 A
I
SDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 48 A
V
SD(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage I
SD
= 12 A, V
GS
= 0 - 1.1 V
t
rr
Reverse recovery time I
SD
= 12 A,
di/dt = 100 A/μs,
V
DD
= 16 V
(see Figure 15)
-15 ns
Q
rr
Reverse recovery charge - 6.5 nC
I
RRM
Reverse recovery current - 0.9 A
mum Io" S‘NGLE PULSE lo" 10’5 lo" 10’3 104 ID"'F(5) \NQ
Electrical characteristics STD26P3LLH6
6/16 DocID023574 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
I
D
10
1
0.1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single pulse
AM15963v1
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
I
D
30
20
10
0
00.4 V
DS
(V)
0.8
(A)
0.2 0.6 1
3V
4V
1.2
25
15
5
5V
6V
7V
8V
9V
10V
35
AM15964v1
I
D
30
20
10
0
04V
GS
(V)
8
(A)
26
5
15
25
35
V
DS
=1V
AM15965v1
VGS
6
4
2
0
04Qg(nC)
(V)
16
8
812
10
12
20 24 28
AM15966v1
R
DS(on)
30.0
20.0
10.0
0.0
08I
D
(A)
(mΩ)
4
V
GS
=10V
2610
40.0
AM15967v1
/ \ \\\
DocID023574 Rev 5 7/16
STD26P3LLH6 Electrical characteristics
16
Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs
temperature
Figure 10. Normalized on-resistance vs
temperature Figure 11. Normalized V
DS
vs temperature
Figure 12. Source-drain diode forward
characteristics
C
600
400
200
0
010 V
DS
(V)
(pF)
5
800
15
Ciss
Coss
Crss
20 25
1000
1200
1400
1600
AM15968v1
V
GS(th)
0.8
0.6
0.4
0.2
-55 -5 T
J
(°C)
(norm)
-30
1
70
20 45 95
I
D
=250µA
0
120
AM15969v1
R
DS(on)
0.8
0.6
0.2
0-55 5T
J
(°C)
(norm)
-30 70
20 45 95
1
1.2
1.4
I
D
=6A
0.4
1.6
120
AM15970v1
V
DS
T
J
(°C)
(norm)
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08 I
D
=1mA
-55 5
-30 70
20 45 95 120
AM15971v1
V
SD
26I
SD
(A)
(V)
4810
0.6
0.7
0.8
0.9
TJ=-55°C
TJ=175°C
TJ=25°C
1
0.5
AM15972v1
zzuu 3.3 A A n ‘ D Mus L_ MODE FASY ‘ [:100 H mm E “ W 5.; man ‘_
Test circuits STD26P3LLH6
8/16 DocID023574 Rev 5
3 Test circuits
Figure 13. Switching times test circuit for
resistive load Figure 14. Gate charge test circuit
Figure 15. Test circuit for diode recovery
behavior Figure 16. Unclamped inductive load test circuit
AM11255v1
AM11256v1
AM11257v1
VGS
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM18080v1
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID023574 Rev 5 9/16
STD26P3LLH6 Package mechanical data
16
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
L2 THERMAL PAD
Package mechanical data STD26P3LLH6
10/16 DocID023574 Rev 5
Figure 19. DPAK (TO-252) type A drawing
0068772_M_type_A
DocID023574 Rev 5 11/16
STD26P3LLH6 Package mechanical data
16
Table 9. DPAK (TO-252) type A mechanical data
Dim. mm
Min. Typ. Max.
A2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b0.64 0.90
b4 5.20 5.40
c0.45 0.60
c2 0.48 0.60
D6.00 6.20
D1 5.10
E6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1.00 1.50
(L1) 2.80
L2 0.80
L4 0.60 1.00
R0.20
V2 0°
61 28 15 10.7
Package mechanical data STD26P3LLH6
12/16 DocID023574 Rev 5
Figure 20. DPAK (TO-252) type A footprint
(a)
a. All dimensions are in millimeters
Footprint_REV_M_type_A
n‘ p EM @ m .++¢¢.+¢o.~ . ‘ ‘ ‘ . 9
DocID023574 Rev 5 13/16
STD26P3LLH6 Packaging mechanical data
16
5 Packaging mechanical data
Figure 21. Tape for DPAK (TO-252)
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
Packaging mechanical data STD26P3LLH6
14/16 DocID023574 Rev 5
Figure 22. Reel for DPAK (TO-252)
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID023574 Rev 5 15/16
STD26P3LLH6 Revision history
16
6 Revision history
Table 11. Document revision history
Date Revision Changes
22-Aug-2012 1 First release
31-Jan-2013 2
– Modified: R
DS(on)
on the title, Features table and Table 5
– Modified: typical values on Table 6, 7, 8
– Modified: V
SD
max value on Table 8
– Updated: Section 4: Package mechanical data
16-Jul-2013 3
Modified: V
GS
and I
D
=100 °C values in Table 2
Modified: R
DS(on)
max value in Table 5, Figure 13, 14 and 15
Inserted: Section 2.1: Electrical characteristics (curves)
10-Sep-2013 4 Updated Q
g
value in Table 6: Dynamic.
06-Feb-2014 5
Added: Table 4: Avalanche characteristics
Modified: Figure 2, 5 and 12
Updated: Section 4: Package mechanical data
Added: Figure 16, 17 and 18
Minor text changes
ny
STD26P3LLH6
16/16 DocID023574 Rev 5