SIA440DJ Datasheet by Vishay Siliconix

VISHAYI RoHS cowum www.VIshay.com/doc?99912 HALOGEN FREE OJ N»Channe\ MOSFET Bolmm VI P SIAMODJ-TI-GEG (Lead (PbHvee and HzIogen-VreeI www.vusnay,cam/doc773257 pmosIecHsugpon@wshay.com THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS SET FORTH AT www.mshaycam/dacmmm
Vishay Siliconix
SiA440DJ
Document Number: 64138
S13-1268-Rev. A, 27-May-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
N-Channel 40 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Portable Devices such as Tablet PCs
and Mobile Computing
- DC/DC Converter
- Boost Converter
- Load Switch
- Power Management
- LED Backlighting
Notes:
a. Based on package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.) ID (A)aQg (Typ.)
40
0.026 at VGS = 10 V 12
6.9 nC
0.028 at VGS = 4.5 V 12
0.029 at VGS = 3.7 V 12
0.035 at VGS = 2.5 V 12
Ordering Information:
SiA440DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
PowerPAK SC-70-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
2.05 mm
2.05 mm
N-Channel MOSFET
G
D
S
Marking Code
X X X
A U X
Lot Traceability
and Date code
Part # code
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
12a
A
TC = 70 °C 12a
TA = 25 °C 8.6a,b, c
TA = 70 °C 6.9b, c
Pulsed Drain Current (t = 100 µs) IDM 50
Continuous Source-Drain Diode Current TC = 25 °C IS
12a
TA = 25 °C 2.9b, c
Single Avalanche Current L = 0.1 mH IAS 11
Single Avalanche Energy EAS 6mJ
Maximum Power Dissipation
TC = 25 °C
PD
19
W
TC = 70 °C 12
TA = 25 °C 3.5b, c
TA = 70 °C 2.2b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, f t 5 s RthJA 28 36 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5
— VISHA¥ gmostechsupgan@wsn y om THE PRODUCTS DESCRIBED HEREIN AND THTS DOCUMENT ARE SUBJECT TO SPECIFTC DTSCLAIMEHS, SET FORTH AT wwwmshay com/dofisiooo
www.vishay.com
2
Document Number: 64138
S13-1268-Rev. A, 27-May-13
Vishay Siliconix
SiA440DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V
VDS Temperature Coefficient VDS/TJ ID = 250 µA 39 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ - 3.6
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.4 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 40 V, VGS = 0 V 1µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) V
DS 5 V, VGS = 10 V 10 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 9 A 0.021 0.026
VGS = 4.5 V, ID = 7 A 0.022 0.028
VGS = 3.7 V, ID = 7 A 0.023 0.029
VGS = 2.5 V, ID = 7 A 0.026 0.035
Forward Transconductanceagfs VDS = 10 V, ID = 9 A 45 S
Dynamicb
Input Capacitance Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
700
pFOutput Capacitance Coss 87
Reverse Transfer Capacitance Crss 40
Total Gate Charge Qg
VDS = 20 V, VGS = 10 V, ID = 9 A 14.3 21.5
nC
VDS = 20 V, VGS = 4.5 V, ID = 9 A
6.9 10.5
Gate-Source Charge Qgs 1.4
Gate-Drain Charge Qgd 2
Gate Resistance Rgf = 1 MHz 0.2 1 2
Tur n - O n D e l ay Time td(on)
VDD = 20 V, RL = 2.9
ID 7 A, VGEN = 10 V, Rg = 1
715
ns
Rise Time tr510
Turn-Off Delay Time td(off) 20 40
Fall Time tf310
Tur n - O n D e l ay T im e td(on)
VDD = 20 V, RL = 2.9
ID 7 A, VGEN = 4.5 V, Rg = 1
12 25
Rise Time tr32 65
Turn-Off Delay Time td(off) 23 45
Fall Time tf510
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 12 A
Pulse Diode Forward Current (t = 100 µs) ISM 50
Body Diode Voltage VSD IS = 7 A 0.85 1.2 V
Body Diode Reverse Recovery Time trr
IF = 7 A, dI/dt = 100 A/µs, TJ = 25 °C
15 30 ns
Body Diode Reverse Recovery Charge Qrr 7.5 15 nC
Reverse Recovery Fall Time ta9ns
Reverse Recovery Rise Time tb6
— VISHAY. V LIX I5 pmosIecHsugpon@wshay.com THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS SET FORTH AT www.mshaycam/dacmmm
Document Number: 64138
S13-1268-Rev. A, 27-May-13
www.vishay.com
3
Vishay Siliconix
SiA440DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 4 V
VGS = 3 V
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0 10 20 30 40 50
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 3.7 V
V
GS
= 2.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 3 6 9 12 15
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS = 32 V
VDS = 10 V
VDS = 20 V
I
D
= 9 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
200
400
600
800
1000
0 8 16 24 32 40
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 2.5 V
I
D
= 9 A
V
GS
= 10 V, 4.5 V, 3.7 V
— VISHA¥ gmstechsupgan@wsn y om THE PRODUCTS DESCRIBED HEREIN AND THTS DOCUMENT ARE SUBJECT TO SPECIFTC DTSCLAIMEHS, SET FORTH AT www.mshaycom/dofimooo
www.vishay.com
4
Document Number: 64138
S13-1268-Rev. A, 27-May-13
Vishay Siliconix
SiA440DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 150 °C
TJ = 25 °C
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125
°
C
T
J
= 25 °C
I
D
= 9 A
Power (W)
Time (s)
10 10000.10.010.001 1001
0
5
10
15
20
25
30
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
10 s
100 ms
Limited by R
DS
(
on
)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 μs
1 s
DC
— VISHAY. V QmosIechsupporl @ wshay.com THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCUIMERS‘ SET FORTH AT www.mshaycam/CIOCWIOOO
Document Number: 64138
S13-1268-Rev. A, 27-May-13
www.vishay.com
5
Vishay Siliconix
SiA440DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
5
10
15
20
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Dissipation (W)
— VISHA¥ www vrshal Cum/ggg754138 gmstechsupgan@wsn y om THE PRODUCTS DESCRIBED HEREIN AND THTS DOCUMENT ARE SUBJECT TO SPECIFTC DTSCLAIMEHS, SET FORTH AT www.mshaycom/dofimooo
www.vishay.com
6
Document Number: 64138
S13-1268-Rev. A, 27-May-13
Vishay Siliconix
SiA440DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64138.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
10-3 10-2
10-4
1
0.1
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
0.05
10-1
VISHAYE
Vishay Siliconix
Package Information
Document Number: 73001
06-Aug-07
www.vishay.com
1
PowerPAK® SC70-6L
DIM
SINGLE PAD DUAL PAD
MILLIMETERS INCHES MILLIMETERS INCHES
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
b0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010
D1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D2 0.135 0.235 0.335 0.005 0.009 0.013
E1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E2 0.345 0.395 0.445 0.014 0.016 0.018
E3 0.425 0.475 0.525 0.017 0.019 0.021
e0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
K0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP
K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP
K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP
K3 0.225 TYP 0.009 TYP
K4 0.355 TYP 0.014 TYP
L0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015
T0.05 0.10 0.15 0.002 0.004 0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
E2
BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
PIN1
PIN6 PIN5
PIN4
PIN2 PIN3
A
Z
DETAIL Z
z
D
E
K1
K2
C
A1
K3K2 K2
e b
b e
PIN6 PIN5 PIN4
PIN1 PIN3
PIN2
E1
E1
E1
L
L
K4
K
K
K
D1 D2 D1 D1
K1
E3
— VISHAY..
Application Note 826
Vishay Siliconix
Document Number: 70486 www.vishay.com
Revision: 21-Jan-08 11
APPLICATION NOTE
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
1
0.300 (0.012)
0.350 (0.014)
2.200 (0.087) 1.500 (0.059)
0.650 (0.026)
0.950 (0.037)
0.300 (0.012)
0.355 (0.014)
0.235 (0.009)
0.475 (0.019)
0.870 (0.034)
0.275 (0.011)
0.350 (0.014)
0.550 (0.022)
0.650 (0.026)
Dimensions in mm/(Inches)
Return to Index
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED