TCET1100(G) - TCET1109(G) Datasheet by Vishay Semiconductor Opto Division

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www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83503
810 Rev. 2.3, 14-Oct-09
TCET1100, TCET1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Temperature
DESCRIPTION
The TCET110. consists of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4-lead
plastic dual inline package.
AGENCY APPROVALS
UL1577, file no. E52744, double protection
cUL tested, file A52744
BSI: EN 60065:2002, EN 60950:2000
DIN EN 60747-5-5 (VDE 0884)
•FIMKO
FEATURES
High common mode rejection
Low temperature coefficient of CTR
CTR offered in 9 groups
Reinforced isolation provides circuit protection
against electrical shock (safety class II)
Isolation materials according to UL 94 V-O
Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
Climatic classification 55/100/21 (IEC 60068 part 1)
Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
Rated recurring peak voltage (repetitive)
VIORM = 848 Vpeak
Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI 175
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
for appl. class I - IV at mains voltage 300 V
for appl. class I - III at mains voltage 600 V according to
DIN EN 60747-5-5 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
17197_5
CE
AC
12
3
4
V
DE
C
17197_4
— VISHAYJ V ogmcoug‘eranswers@vlshay,com
Document Number: 83503 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.3, 14-Oct-09 811
TCET1100, TCET1100G
Optocoupler, Phototransistor Output,
High Temperature Vishay Semiconductors
Note
G = lead form 10.16 mm; G is not marked on the body
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices (DIP).
ORDER INFORMATION
PART REMARKS
TCET1100 CTR 50 % to 600 %, DIP-4
TCET1101 CTR 40 % to 80 %, DIP-4
TCET1102 CTR 63 % to 125 %, DIP-4
TCET1103 CTR 100 % to 200 %, DIP-4
TCET1104 CTR 160 % to 320 %, DIP-4
TCET1105 CTR 50 % to 150 %, DIP-4
TCET1106 CTR 100 % to 300 %, DIP-4
TCET1107 CTR 80 % to 160 %, DIP-4
TCET1108 CTR 130 % to 260 %, DIP-4
TCET1109 CTR 200 % to 400 %, DIP-4
TCET1100G CTR 50 % to 600 %, DIP-4, 400 mil
TCET1101G CTR 40 % to 80 %, DIP-4, 400 mil
TCET1102G CTR 63 % to 125 %, DIP-4, 400 mil
TCET1103G CTR 100 % to 200 %, DIP-4, 400 mil
TCET1104G CTR 160 % to 320 %, DIP-4, 400 mil
TCET1105G CTR 50 % to 150 %, DIP-4, 400 mil
TCET1106G CTR 100 % to 300 %, DIP-4, 400 mil
TCET1107G CTR 80 % to 160 %, DIP-4, 400 mil
TCET1108G CTR 130 % to 260 %, DIP-4, 400 mil
TCET1109G CTR 200 % to 400 %, DIP-4, 400 mil
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF60 mA
Forward surge current tp 10 µs IFSM 1.5 A
OUTPUT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA
COUPLER
Isolation test voltage (RMS) t = 1 min VISO 5000 VRMS
Operating ambient temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 125 °C
Soldering temperature (2) 2 mm from case, 10 s Tsld 260 °C
VISHAYm ogtocougleranswers@vwshaycom
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83503
812 Rev. 2.3, 14-Oct-09
TCET1100, TCET1100G
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Temperature
Note
(1) The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal
Characteristics of Optocouplers” application note.
(2) For 2 layer FR4 board (4" x 3" x 0.062").
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
THERMAL CHARACTERISTICS (1)
PARAMETER SYMBOL VALUE UNIT
LED power dissipation Pdiss 100 mW
Output power dissipation Pdiss 150 mW
Maximum LED junction temperature Tjmax. 125 °C
Maximum output die junction temperature Tjmax. 125 °C
Thermal resistance, junction emitter to board θEB 173 °C/W
Thermal resistance, junction emitter to case θEC 149 °C/W
Thermal resistance, junction detector to board θDB 111 °C/W
Thermal resistance, junction detector to case θDC 127 °C/W
Thermal resistance, junction emitter to
junction detector θED 173 °C/W
Thermal resistance, board to ambient (2) θBA 197 °C/W
Thermal resistance, case to ambient (2) θCA 4041 °C/W
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF1.25 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 70 V
Emitter collector voltage IE = 100 µA VECO 7V
Collector emitter cut-off current VCE = 20 V, IF = 0 A, E = 0 ICEO 10 100 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ωfc110 kHz
Coupling capacitance f = 1 MHz Ck0.3 pF
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package
— VISHAYJ V ogmcoug‘eranswers@vlshay,com
Document Number: 83503 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.3, 14-Oct-09 813
TCET1100, TCET1100G
Optocoupler, Phototransistor Output,
High Temperature Vishay Semiconductors
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF
VCE = 5 V, IF = 1 mA
TCET1101
TCET1101G CTR 13 30 %
TCET1102
TCET1102G CTR 22 45 %
TCET1103
TCET1103G CTR 34 70 %
TCET1104
TCET1104G CTR 56 90 %
VCE = 5 V, IF = 5 mA
TCET1100
TCET1100G CTR 50 600 %
TCET1105
TCET1105G CTR 50 150 %
TCET1106
TCET1106G CTR 100 300 %
TCET1107
TCET1107G CTR 80 160 %
TCET1108
TCET1108G CTR 130 260 %
TCET1109
TCET1109G CTR 200 400 %
VCE = 5 V, IF = 10 mA
TCET1101
TCET1101G CTR 40 80 %
TCET1102
TCET1102G CTR 63 125 %
TCET1103
TCET1103G CTR 100 200 %
TCET1104
TCET1104G CTR 160 320 %
MAXIMUM SAFETY RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current IF130 mA
OUTPUT
Power dissipation Pdiss 265 mW
COUPLER
Rated impulse voltage VIOTM 6kV
Safety temperature Tsi 150 °C
INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test 100 %, ttest = 1 s Vpd 1.6 kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM 6kV
Vpd 1.3 kV
Insulation resistance
VIO = 500 V RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
VIO = 500 V, Tamb = 150 °C
(construction test only) RIO 109Ω
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www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83503
814 Rev. 2.3, 14-Oct-09
TCET1100, TCET1100G
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Temperature
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 4 - Test Circuit, Saturated Operation
0 25 50 75 125
0
50
100
150
200
300
Ptot - Total Power Dissipation (mW)
Tsi - Safety Temperature (°C)
150
94 9182
100
250 Phototransistor
Psi (mW)
IR-diode
Isi (mA)
t
13930
t1
, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3) tds
Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3) trs
Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3) ton s
Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3) ts0.3 µs
Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3) tf4.7 µs
Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3) toff s
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4) ton s
Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4) toff 10 µs
Channel I
Channel II
95 10804
RG = 50 Ω
tp
tp = 50 µs
T= 0.01
+ 5 V
IF
0
50 Ω100 Ω
IF
IC = 2 mA; adjusted through
input amplitude
Oscilloscope
RL= 1 MΩ
CL= 20 pF
Channel I
Channel II
95 10843
RG= 50 Ω
tp
tp= 50 µs
T= 0.01
+ 5 V
IC
IF
0
50 Ω1 kΩ
IF= 10 mA
Oscilloscope
RL
CL20 pF
1 MΩ
— VISHAYJ V ogmcaug‘eranswers@vlshay,com
Document Number: 83503 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.3, 14-Oct-09 815
TCET1100, TCET1100G
Optocoupler, Phototransistor Output,
High Temperature Vishay Semiconductors
Fig. 5 - Switching Times
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf)Turn-off time
96 11698
0
50
100
150
200
250
300
04080 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4 2.0
- 25 0 25 50
0
0.5
1.0
1.5
2.0
CTRrel - Relative Current Transfer Ratio
95 11025
75
Tamb - Ambient Temperature (°C)
VCE = 5 V
IF = 5 mA
0255075
1
10
100
1000
10 000
ICEO - Collector Dark Current,
100
95 11026
with Open Base (nA)
VCE = 20 V
IF = 0
Tamb - Ambient Temperature (°C)
VISHAYm ogtocougleranswers@vwshaycom
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83503
816 Rev. 2.3, 14-Oct-09
TCET1100, TCET1100G
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Temperature
Fig. 10 - Collector Current vs. Forward Current
Fig. 11 - Collector Current vs. Collector Emitter Voltage
Fig. 12 - Collector Emitter Saturation Voltage vs.
Collector Current
Fig. 13 - Current Transfer Ratio vs. Forward Current
Fig. 14 - Turn-on/off Time vs. Collector Current
Fig. 15 - Turn-on/off Time vs. Forward Current
0.1 1 10
0.01
0.1
1
100
IC - Collector Current (mA)
IF - Forward Current (mA)
100
95 11027
10
VCE = 5 V
0.1 1 10
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
100
95 10985
IC - Collector Current (mA)
I
F
= 50 mA
5 mA
2 mA
1 mA
20 mA
10 mA
110
0
0.2
0.4
0.6
0.8
1.0
VCEsat - Collector Emitter
Saturation Voltage (V)
IC - Collector Current (mA)
100
CTR = 50 %
used
20 % used
95 11028
10 % used
0.1 1 10
1
10
100
1000
CTR - Current Transfer Ratio (%)
IF - Forward Current (mA)
100
95 11029
VCE = 5 V
04
0
2
4
6
8
10
IC - Collector Current (mA)
8
95 11030
ton/toff- Turn-on /Turn-off Time (µs)
Non-saturated
operation
VS = 5 V
RL = 100 Ω
toff
ton
6
2
01015
0
10
20
30
40
50
I
F
- Forward Current (mA)
20
95 11031
t
on
/t
off
- Turn-on/Turn-off Time (µs)
Saturated operation
VS = 5 V
RL = 1 kΩ
toff
ton
5
— VISHAYn V ogmcaug‘eranswers @ vlshayxmm
Document Number: 83503 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.3, 14-Oct-09 817
TCET1100, TCET1100G
Optocoupler, Phototransistor Output,
High Temperature Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING
0.25 typ.
i178027-4
6.5 ± 0.3
4.58 ± 0.3
2.54 typ.
3.5 ± 0.1 4.5 ± 0.3
0° to 15°
1.3 ± 0.1
0.4 ± 0.1
7.62 typ.
Pin 1 identifier
2.8 ± 0.5
7.62 to 9.5
0.5 ± 0.1
10.16 typ.
7.62 typ.
TCET1100G type
4.5 ± 0.3
20802-3
2.55 ± 0.25
21764-3
ET1100
V YWW 24
— VISHAY. V
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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