MBRT60020 thru MBRT60040R Datasheet by GeneSiC Semiconductor

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@GeneSic'” SEMICONDUCTOR Schottky Diode \ m, 'errma‘ Anode Bulls cuumm Cathode 3 “C
VRRM = 20 V - 40 V
IF(AV) = 600 A
Features
• High Surge Capability Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Parameter Symbol MBRT60020(R) MBRT60030(R) Unit
Repetitive peak reverse voltage
VRRM 20 30 V
RMS reverse voltage
VRMS 14 21 V
DC blocking voltage
VDC 20 30 V
Operating temperature
Tj-55 to 150 -55 to 150 °C
Storage temperature
Tstg -55 to 150 -55 to 150 °C
Parameter Symbol MBRT60020(R) MBRT60030(R) Unit
Average forward current (per
pkg)
IF(AV) 600 600 A
Maximum instantaneous
forward voltage (per leg)
0.75 0.75
1 1
10 10
50 50
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC 0.28 0.28 °C/W
Silicon Power
Schottky Diode
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
VF
50
0.28
Tj = 150 °C
MBRT60020 thru MBRT60040R
Tj = 25 °C
IFM = 300 A, Tj = 25 °C
Conditions
35
25
MBRT60035(R)
-55 to 150
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
1
MBRT60035(R)
mA
0.75
Tj = 100 °C
10
V
-55 to 150
Conditions
35
A
• Types from 20 V to 40 V VRRM
TC =125 °C
600
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
4000
4000
4000
1
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt60020.pdf
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MBRT60020 thru MBRT60040R
2
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt60020.pdf
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBRT60020 thru MBRT60040R
3
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt60020.pdf

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