FST10045 thru FST100100 Datasheet by GeneSiC Semiconductor

View All Related Products | Download PDF Datasheet
@GeneSic'” SEMICONDUCTOR Schottky Diode @5 I’M I PINZ I’|\ t;
VRRM = 45 V - 100 V
IF(AV) = 100 A
Features
• High Surge Capability TO-249AB Package
• Isolated to Plate
• Not ESD Sensitive
Parameter Symbol FST10045 FST10060 Unit
Repetitive peak reverse voltage
VRRM 45 60 V
RMS reverse voltage
VRMS 32 42 V
DC blocking voltage
VDC 45 60 V
Operating temperature
Tj-55 to 150 -55 to 150 °C
Storage temperature
Tstg -55 to 150 -55 to 150 °C
Parameter Symbol FST10045 FST10060 Unit
Average forward current (per
pkg)
IF(AV) 100 100 A
Maximum instantaneous
forward voltage (per leg)
0.70 0.75
1 1
10 10
30 30
Thermal characteristics
Thermal resistance, junction -
case (per leg)
RΘJC 1.0 1.0 °C/W
70
100
80
-55 to 150
-55 to 150
-55 to 150
FST100100
1
1
FST10080
1.0
Tj = 150 °C
1.0
0.84
0.84
30
mA
V
Tj = 100 °C
• Types from 45 V to 100V VRRM
30
FST10045 thru FST100100
Tj = 25 °C
IFM = 50 A, Tj = 25 °C
10
10
Conditions
FST100100
80
57
FST10080
-55 to 150
100
VF
Conditions
Silicon Power
Schottky Diode
TC = 125 °C
100
100
Peak forward surge current (per
leg)
IFSM
tp = 8.3 ms, half sine
1000
1000
1000
1000
A
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Inches
Millimeters
Min
Max
Min
Max
A
1.995
2.005
50.67
50.93
B
0.300
0.325
7.62
8.26
C
0.495
0.505
12.57
12.83
D
0.182
0.192
4.62
4.88
E
0.990
1.010
25.15
26.65
F
2.390
2.410
60.71
61.21
G
1.495
1.525
37.90
38.70
H
0.114
0.122
2.90
3.10
J
-----
0.420
-----
10.67
K
0.256
0.275
6.5
7.0
L
0.490
0.510
12.45
12.95
M
0.330
0.350
8.38
8.90
N
0.175
0.195
4.45
4.95
P
0.035
0.045
0.89
1.14
R
0.445
0.455
11.30
11.56
Q
0.890
0.910
22.61
23.11
F
H
P
J
G
C
B
A
L
E
Q
M
R
N
D
K
1
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/fst100100.pdf
)GeneSiC” SEMICONDUCYOR Figure .IVTW W W Fhuro V27 Fenland Dolfillg W 500 200 g 2 150 E E. K 3 100 u “ . D g g a: 5“ 5 a a g E5 anoozo a. m 20 6110030 3 rsnooss 2 § 10 Emma 0 a) a) 90 120 I50 Im g FSI'IOOQS 1 E 6 0 , > m (aseTmn-er L 5 4,0 10 1,0 0 072 074 “0.56 073 ‘70 ‘72 figure A. Typ‘d szase M medvnlngevnns ( F9123PmkauSI-gmmm E ‘2‘“ I III I I I I III E 8MB ‘ HIII «m mm a g .EDECmehod 13:25:: g. t. 3 mo . E g ‘2 an g F; g \ E i“ w" \~ 2 IL 2]) K i \~~~_.. E " n E m 4 53mm fyrlrs manwsowmmwwo Nullm' 0f Cycles M WHI’ Cycles VD,“ m Voltage , Vnmml
FST10045 thru FST100100
Inches
Millimeters
Min
Max
Min
Max
A
1.995
2.005
50.67
50.93
B
0.300
0.325
7.62
8.26
C
0.495
0.505
12.57
12.83
D
0.182
0.192
4.62
4.88
E
0.990
1.010
25.15
26.65
F
2.390
2.410
60.71
61.21
G
1.495
1.525
37.90
38.70
H
0.114
0.122
2.90
3.10
J
-----
0.420
-----
10.67
K
0.256
0.275
6.5
7.0
L
0.490
0.510
12.45
12.95
M
0.330
0.350
8.38
8.90
N
0.175
0.195
4.45
4.95
P
0.035
0.045
0.89
1.14
R
0.445
0.455
11.30
11.56
Q
0.890
0.910
22.61
23.11
F
H
P
J
G
C
B
A
L
E
Q
M
R
N
D
K
2
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/fst100100.pdf
@GeneSic“ SEM‘CONDUCTOR “ 151} T a a! +\ T i
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
FST10045 thru FST100100
Inches
Millimeters
Min
Max
Min
Max
A
1.995
2.005
50.67
50.93
B
0.300
0.325
7.62
8.26
C
0.495
0.505
12.57
12.83
D
0.182
0.192
4.62
4.88
E
0.990
1.010
25.15
26.65
F
2.390
2.410
60.71
61.21
G
1.495
1.525
37.90
38.70
H
0.114
0.122
2.90
3.10
J
-----
0.420
-----
10.67
K
0.256
0.275
6.5
7.0
L
0.490
0.510
12.45
12.95
M
0.330
0.350
8.38
8.90
N
0.175
0.195
4.45
4.95
P
0.035
0.045
0.89
1.14
R
0.445
0.455
11.30
11.56
Q
0.890
0.910
22.61
23.11
F
H
P
J
G
C
B
A
L
E
Q
M
R
N
D
K
1 2 3
3
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/fst100100.pdf

Products related to this Datasheet

DIODE MODULE 100V 100A TO249AB
Available Quantity: 0
Unit Price: 71.24625
DIODE MODULE 45V 100A TO249AB
Available Quantity: 0
Unit Price: 71.24625
DIODE MODULE 60V 100A TO249AB
Available Quantity: 0
Unit Price: 71.24625
DIODE MODULE 80V 100A TO249AB
Available Quantity: 0
Unit Price: 71.24625