1N5826 thru 1N5828R Datasheet by GeneSiC Semiconductor

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@GeneSiC'” SEMICONDUCTOR Schottky Diode \ \ @
VRRM = 20 V - 40 V
IF = 15 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Repetitive peak reverse voltage
VRRM V
RMS reverse voltage
VRMS V
DC blocking voltage
VDC V
Continuous forward current
IFA
Operating temperature
Tj°C
Storage temperature
Tstg °C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case
RthJC °C/W
1N5826 thru 1N5828R
VR = 20 V, Tj = 25 °C
IF = 15 A, Tj = 25 °C
Reverse current
IR
VF
2. Reverse polarity (R): Stud is anode.
Silicon Power
Schottky Diode
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
Conditions
TC = 25 °C, tp = 8.3 ms
TC ≤ 100 °C
Conditions
1N5826 (R)
1N5827 (R)
1N5828 (R)
30
21
14
1N5826 (R)
1N5827 (R)
1.8
1.8
VR = 20 V, Tj = 125 °C
250
250
-55 to 150
-55 to 150
250
30
20
-55 to 150
-55 to 150
-55 to 150
-55 to 150
10
1N5828 (R)
0.44
10
10
• Types from 20 V to 40 V VRRM
1.8
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
15
15
15
500
500
500
20
40
28
40
0.47
0.5
C
A
A
C
Stud Stud
(R)
C
A
A
C
Stud Stud
(R)
1
Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n5826.pdf
J GeneSiC” SEMICONDUCTOR Instantaneous FonIvard Current « Amperes vc 1‘51]: Peak Forward Surge Current AAmperes I.» I; II: Amps Amps Figure .1-Typlcal F 0.2 0.4 0.6 0.8 1 Volts Instantaneous Forward Voltage , Volts 600 500 400 200 100 Figure 3. Peak Forward Surge Current rd Charadensllcs .0 1.2 I I I I I I I I I B Ems Srngle Harf Sine Wave JEDEC memud TJ =25‘c \ \ 1 2 4 6 810 20 40 El] 8010!] Cycles Number or Cycles At 60Hz — Cycles Average ForwAvd Rectmed Cunem . Amperesmxu. Vnsrancaneous Reverse Leakage Current- MHIAmperes Ich; Amps Frgure 2, Forward Deraring Curve 15 12 3 Single Phase, Half Wave (5on Reslsllve or Inducmve Load 0 0 3D 60 90 120 150 150 ‘c Case Temperalure , c 1000 F ure 47Typica| Reverse Characrerislics 600 4,30 T] :1 50 c 200 100 50 40 20 1 mAmps N A m a LIixx'zamA TJ =25“c 02 .01 O 10 20 30 4D 50 Volts Reverse Vcllage » Volts
1N5826 thru 1N5828R
C
A
A
C
Stud Stud
(R)
C
A
A
C
Stud Stud
(R)
2
Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n5826.pdf
J GeneSiC“ SEMICONDUCTOR L A B C D E F G I M N P |._ .—c:_. n L“ [)0- 4 (DO-ZUSAA) 10-32 UNF
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
1N5826 thru 1N5828R
C
A
A
C
Stud Stud
(R)
C
A
A
C
Stud Stud
(R)
3
Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n5826.pdf

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