BAT42/43 Datasheet by Vishay General Semiconductor - Diodes Division

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BAT42, BAT43
www.vishay.com Vishay Semiconductors
Rev. 1.8, 01-Jun-17 1Document Number: 85660
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
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MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammo tape (52 mm tape), 50K/box
FEATURES
For general purpose applications
• These diodes feature very low turn-on voltage
and fast guard ring against excessive voltage,
such as electrostatic discharges
These diodes are also available in the SOD-123
case with the type designations BAT42W-V to
BAT43W-V and in MiniMELF SOD-80 case with
the type designations LL42 to LL43
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Note
(1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAT42 BAT42-TR or BAT42-TAP Single BAT42 Tape and reel/ammopack
BAT43 BAT43-TR or BAT43-TAP Single BAT43 Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 30 V
Forward continuous current (1) IF200 mA
Repetitive peak forward current (1) tp < 1 s, δ < 0.5 IFRM 500 mA
Surge forward current (1) tp < 10 ms IFSM 4A
Power dissipation (1) Tamb = 65 °C Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 300 K/W
Junction temperature Tj125 °C
Ambient operating temperature range Tamb -65 to +125 °C
Storage temperature range Tstg -65 to +150 °C
VISHAY. 200 DwodesAmencas@\/wshay.com DwodesAswamwshaymm DwodesEuvoge®vlshamcom www.v\shay,com/doc?91000
BAT42, BAT43
www.vishay.com Vishay Semiconductors
Rev. 1.8, 01-Jun-17 2Document Number: 85660
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test; tp < 300 μs, tp/T < 0.02
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Forward Characteristics
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Typical Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage IR = 100 μA (pulsed) V(BR) 30 V
Leakage current (1) VR = 25 V IR0.5 μA
VR = 25 V, Tj = 100 °C IR100 μA
Forward voltage (1)
IF = 200 mA VF1000 mV
IF = 10 mA BAT42 VF400 mV
IF = 50 mA BAT42 VF650 mV
IF = 2 mA BAT43 VF260 330 mV
IF = 15 mA BAT43 VF450 mV
Diode capacitance VR = 1 V, f = 1 MHz CD7pF
Reserve recovery time IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ωtrr 5ns
Rectification efficieny RL = 15 kΩ, CL = 300 pF,
f = 45 MHz, VRF = 2 V ηv80 %
200
18442 Tamb - Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
Ptot - Power Dissipation (mW)
18443
120010008006004002000
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01
VF- Instantaneous Forward Voltage (mV)
25 °C
125 °C - 40 °C
1000
100
10
1
0.1
0.01
18444
0 1020304050
V
R
- Reverse Voltage (V)
125 °C
100 °C
75 °C
50 °C
25 °C
I - Reverse Leackage Current (µA)
R
18445
14
12
10
8
6
4
2
0
0102030
V
R
- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
51525
VISHAY. DwodesAmencas@\/wshay.com DwodesAswa@wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
BAT42, BAT43
www.vishay.com Vishay Semiconductors
Rev. 1.8, 01-Jun-17 3Document Number: 85660
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identification
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
— VISHAY. V
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Revision: 01-Jan-2021 1Document Number: 91000
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