VS-GA250SA60S Datasheet by Vishay General Semiconductor - Diodes Division

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VS-GA250SA60S
www.vishay.com Vishay Semiconductors
Revision: 10-Sep-2019 1Document Number: 94704
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Insulated Gate Bipolar Transistor
Ultralow VCE(on), 250 A
FEATURES
• Standard: optimized for minimum saturation
voltage and low speed
• Lowest conduction losses available
• Fully isolated package (2500 VAC)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
PRIMARY CHARACTERISTICS
VCES 600 V
VCE(on) (typical) at 200 A, 25 °C 1.33 V
IC at TC = 90 °C 250 A
Speed DC to 1 kHz
Package SOT-227
Circuit configuration Single switch no diode
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current IC
TC = 25 °C 400
A
TC = 90 °C 250
Pulsed collector current ICM Repetitive rating; VGE = 20 V, pulse width limited by
maximum junction temperature 400
Clamped Inductive load current ILM VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.0 400
Gate to emitter voltage VGE ± 20 V
Power dissipation PD
TC = 25 °C 961 W
TC = 90 °C 462
Isolation voltage VISOL Any terminal to case, t = 1 min 2500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range TJ, TStg -40 - 150 °C
Thermal resistance junction to case RthJC - - 0.13 °C/W
Thermal resistance case to heatsink RthCS Flat, greased surface - 0.05 -
Weight -30-g
Mounting torque Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
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VS-GA250SA60S
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Revision: 10-Sep-2019 2Document Number: 94704
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Note
(1) Pulse width 80 μs; duty factor 0.1 %
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 1 mA 600 - -
V
Emitter to collector breakdown voltage V(BR)ECS (1) VGE = 0 V, IC = 1.0 A 18 - -
Collector to emitter voltage VCE(on)
IC = 100 A
VGE = 15 V
- 1.10 1.3
IC = 200 A - 1.33 1.66
IC = 100 A, TJ = 125 °C - 1.02 -
IC = 200 A, TJ = 125 °C - 1.32 -
IC = 100 A, TJ = 150 °C - 1.02 -
IC = 200 A, TJ = 150 °C - 1.33 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 250 μA 3.0 4.5 6.0
VCE = VGE, IC = 250 μA, TJ = 125 °C - 3.1 -
Temperature coefficient of threshold voltage VGE(th)/TJVCE = VGE, IC = 1 mA, 25 °C to 125 °C - -12 - mV/°C
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 600 V - 20 1000 μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.2 - mA
VGE = 0 V, VCE = 600 V, TJ = 150 °C - 0.6 10
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Qg
IC = 100 A, VCC = 600 V, VGE = 15 V
- 770 1200
nCGate-to-emitter charge (turn-on) Qge - 100 150
Gate-to-collector charge (turn-on) Qgc - 260 380
Turn-on switching loss Eon
TJ = 25 °C
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 5.0 
L = 500 μH
Energy
losses
include tail
and diode
recovery.
Diode used
60APH06
-0.55-
mJTurn-off switching loss Eoff -25-
Total switching loss Etot - 25.5 -
Turn-on delay time td(on) - 267 -
ns
Rise time tr-42-
Turn-off delay time td(off) - 310 -
Fall time tf- 450 -
Turn-on switching loss Eon
TJ = 125 °C
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 5.0 
L = 500 μH
-0.67-
mJTurn-off switching loss Eoff - 43.0 -
Total switching loss Etot - 43.7 -
Turn-on delay time td(on) - 275 -
ns
Rise time tr-50-
Turn-off delay time td(off) - 350 -
Fall time tf- 700 -
Internal emitter inductance LEBetween lead and
center of die contact -5.0- nH
Input capacitance Cies
VGE = 0 V, VCC = 30 V, f = 1.0 MHz
- 16 250 -
pFOutput capacitance Coes - 1040 -
Reverse transfer capacitance Cres - 190 -
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VS-GA250SA60S
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Revision: 10-Sep-2019 3Document Number: 94704
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Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
Fig. 3 - Typical IGBT Transfer Characteristics
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
IC - Continuous Collector Current (A)
Allowable Case Temperature (°C)
80
100
120
140
160
0
20
40
60
0 50 100 150 200 250 300 350 400 450 500
1
10
100
1000
0.50.0 1.0 1.5 2.0 2.5
V
CE
- Collector to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
TJ = 150 °C
VGE = 15 V
TJ = 25 °C
TJ = 125 °C
1
10
100
1000
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GE
- Gate to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
VCE - Collector-to-Emitter Voltage (V)
ICES - Collector Current (mA)
0.01
0.1
1
10
0.0001
0.001
100 200 300 400 500 600
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
VGEth - Threshold Voltage (V)
3.5
4
4.5
5
5.5
6
2
2.5
3
0.20 0.40 0.60 0.80 1.00
TJ = 25 °C
TJ = 125 °C
IC - Continuous Collector Current (mA)
TJ - Junction Temperature (°C)
VCE - Collector-to-Emitter Voltage (V)
0.5
1
1.5
2
2.5
0 20 40 60 80 100 120 140 160
Ic = 100 A
Ic = 200 A
Ic = 400 A
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VS-GA250SA60S
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Revision: 10-Sep-2019 4Document Number: 94704
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Fig. 7 - Typical IGBT Energy Losses vs. IC, TJ = 125 °C,
VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 ,
Diode used: 60APH06
Fig. 8 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 ,
Diode used: 60APH06
Fig. 9 - Typical IGBT Energy Losses vs. Rg,
TJ = 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH,
Diode used: 60APH06
Fig. 10 - Typical IGBT Switching Time vs. Rg,
TJ = 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH,
Diode used: 60APH06
Fig. 11 - Maximum Thermal Impedance ZthJC Characteristics
IC - Collector Current (A)
Switching Energy (mJ)
10
100
1000
0.1
1
25 50 75 100 125 150 175 200 225
Eoff
Eon
I
C
-
Collector Current (A)
Switching Time (μs)
0.01
0.1
1
0 25 50 75 100 125 150 175 200 225
tf
td(off)
td(on)
tr
Energy Losses (mJ)
R
g
(Ω)
0.1
1
10
100
1000
0 1020304050
Eoff
Eon
Switching Time (μs)
Rg (Ω)
0.01
0.1
1
10
0 102030405060
tf
td(off)
td(on)
tr
Z
thJC
- Thermal Impedance Junction
to Case (°C/W)
Rectangular Pulse Duration (s)
0.1
1
0.001
0.01
0.0001 0.001 0.01 0.1 1 10
0.001
DC
0.02
0.05
0.1
0.25
0.50
0.75
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VS-GA250SA60S
www.vishay.com Vishay Semiconductors
Revision: 10-Sep-2019 5Document Number: 94704
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Fig. 12 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental)
Fig. 13 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 14 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 15 - Turn-Off SOA
For both:
Duty cycle: 50 %
TJ = 125 °C
Tsink = 90 °C
Gate drive as specified
Power dissipation = 140 W
0
250
0.1
f - Frequency (kHz)
Load Current (A)
110 100
200
150
100
50
Clamp voltage:
80 % of rated
Triangular wave:
I
60 % of rated
voltage
Ideal diodes
Square wave:
I
1 10 100
0
6000
12 000
18 000
24 000
30 000
VCE - Collector to Emitter Voltage (V)
C - Capacitance (pF)
VGE = 0 V, f = 1 MHz
Cies = Cge + Cgc, Cce shorted
Cres = Cgc
Coes = Cce + Cgc
Cies
Coes
Cres
0 200 400 600 800
0
4
8
12
16
20
Q
G
- Total Gate Charge (nC)
V
GE
- Gate to Emitter Voltage (V)
VCC = 400 V
IC = 100 A
IC - Collector Current (A)
1
10
100
1000
1 10 100 1000
Safe operating area
VCE - Collector to Emitter Voltage (V)
VGE = 20 V
TJ = 125 °C
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VS-GA250SA60S
www.vishay.com Vishay Semiconductors
Revision: 10-Sep-2019 6Document Number: 94704
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Fig. 16a - Clamped Inductive Load Test Circuit Fig. 16b - Pulsed Collector Current Test Circuit
Fig. 17a - Switching Lost Test Circuit
Fig. 17b - Switching Loss Waveforms
D.U.T.
50 V
L
VC*
* Driver same type as D.U.T.; VC = 80 % of VCE (max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated Id
1000 V
1
2
1
2
50 V
Driver*
1000 V
D.U.T.
IC
VC
L
* Driver same type as D.U.T., VC = 480 V
3
1
2
t = 5 µs
td (on)
tf
tr
90 %
td (off)
10 %
90 %
10 %
5 %
VC
IC
Eon Eoff
Ets = (Eon + Eoff)
1
2
3
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Revision: 10-Sep-2019 7Document Number: 94704
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ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch, no
diode S
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1
- Insulated gate bipolar transistor (IGBT)
- Vishay Semiconductors product
2
- Gen 4, IGBT silicon
3
- Current rating (250 = 250 A)
4
- Circuit configuration (S = single switch no diode)
5
- Package indicator (A = SOT-227)
6
- Voltage rating (60 = 600 V)
8
7
- Speed/type (S = standard speed)
Device code
51 32 4 6 7 8
GVS- A 250 S A 60 S
1
43
2
Lead Assignment
3 (C)
2 (G)
1, 4 (E)
N-channel
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Outline Dimensions
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Revision: 19-May-2020 1Document Number: 95423
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SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
Note
• Controlling dimension: millimeter
37.80 (1.488)
38.30 (1.508)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256) 24.70 (0.972)
25.70 (1.012)
2.07 (0.081)
2.12 (0.083)
R full
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
4 x
4.10 (0.161)
4.50 (0.177)
M M M
0.25 (0.010) CA B
4 x M4 nuts
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
5.33 (0.210)
5.96 (0.234)
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