VISHAY.
on: DwodesAmev\cas@wshay.cam DwodesAswafiiwshayxam DwodesEuvopefilvlshayLom
www.v\shay,com/doc?91000
VS-GA250SA60S
www.vishay.com Vishay Semiconductors
Revision: 10-Sep-2019 2Document Number: 94704
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Note
(1) Pulse width 80 μs; duty factor 0.1 %
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 1 mA 600 - -
V
Emitter to collector breakdown voltage V(BR)ECS (1) VGE = 0 V, IC = 1.0 A 18 - -
Collector to emitter voltage VCE(on)
IC = 100 A
VGE = 15 V
- 1.10 1.3
IC = 200 A - 1.33 1.66
IC = 100 A, TJ = 125 °C - 1.02 -
IC = 200 A, TJ = 125 °C - 1.32 -
IC = 100 A, TJ = 150 °C - 1.02 -
IC = 200 A, TJ = 150 °C - 1.33 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 250 μA 3.0 4.5 6.0
VCE = VGE, IC = 250 μA, TJ = 125 °C - 3.1 -
Temperature coefficient of threshold voltage VGE(th)/TJVCE = VGE, IC = 1 mA, 25 °C to 125 °C - -12 - mV/°C
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 600 V - 20 1000 μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.2 - mA
VGE = 0 V, VCE = 600 V, TJ = 150 °C - 0.6 10
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Qg
IC = 100 A, VCC = 600 V, VGE = 15 V
- 770 1200
nCGate-to-emitter charge (turn-on) Qge - 100 150
Gate-to-collector charge (turn-on) Qgc - 260 380
Turn-on switching loss Eon
TJ = 25 °C
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 5.0
L = 500 μH
Energy
losses
include tail
and diode
recovery.
Diode used
60APH06
-0.55-
mJTurn-off switching loss Eoff -25-
Total switching loss Etot - 25.5 -
Turn-on delay time td(on) - 267 -
ns
Rise time tr-42-
Turn-off delay time td(off) - 310 -
Fall time tf- 450 -
Turn-on switching loss Eon
TJ = 125 °C
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 5.0
L = 500 μH
-0.67-
mJTurn-off switching loss Eoff - 43.0 -
Total switching loss Etot - 43.7 -
Turn-on delay time td(on) - 275 -
ns
Rise time tr-50-
Turn-off delay time td(off) - 350 -
Fall time tf- 700 -
Internal emitter inductance LEBetween lead and
center of die contact -5.0- nH
Input capacitance Cies
VGE = 0 V, VCC = 30 V, f = 1.0 MHz
- 16 250 -
pFOutput capacitance Coes - 1040 -
Reverse transfer capacitance Cres - 190 -