IRFS(L)7440PbF Datasheet by Infineon Technologies

InTemOTionol IEER Rectifier RDSton) typ. 2.0mQ max. 2.5m!) (D \\ G D S Gaxe Drain Source Form Quantity \RFS7440PbF DerPak Tube 50 IRFS7440PbF \RFS7440PbF DerPak Tape and ReeT Le“ 500 IRFS7440TRLPbF IRFSLMAOPbF T0262 Tube 50 IRFSL7440PbF '~. "~_ N. ‘s ~ - emifier
HEXFET® Power MOSFET
GDS
Gate Drain Source
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
Benefits
lImproved Gate, Avalanche and Dynamic dV/dt
Ruggedness
lFully Characterized Capacitance and Avalanche
SOA
lEnhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
V
DSS
40V
R
DS(on)
typ.
2.0m
Ω
max. 2.5mΩ
I
D
208A
I
D (Package Limited)
120A
46810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 100A
TJ = 25°C
TJ = 125°C
D
S
G
D
S
G
D2Pak
IRFS7440PbF
S
D
G
D
TO-262
IRFSL7440PbF
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
40
80
120
160
200
240
ID, Drain Current (A)
Limited By Package
StrongIRFET
IRFS7440PbF
IRFSL7440PbF
Form
Quantity
IRFS7440PbF D2-Pak Tube 50 IRFS7440PbF
IRFS7440PbF D2-Pak Tape and Reel Left 800 IRFS7440TRLPbF
IRFSL7440PbF TO-262 Tube 50 IRFSL7440PbF
Base Part Number Package Type Standard Pack Orderable Part Number
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
Avalanche Characteristics As H lm Thermal Resistance - emmer
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFS7440PbF/IRFSL7440PbF
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.048mH
RG = 50Ω, IAS = 100A, VGS =10V.
ISD ≤ 100A, di/dt ≤ 1330A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Rθ is measured at TJ approximately 90°C.
Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 34A, VGS =10V.
Absolute Maximum Ratings
Symbol Parameter Units
I
@ T
= 25°C Continuous Drain Current, V
GS
@ 10V
I
@ T
= 100°C Continuous Drain Current, V
GS
@ 10V
I
@ T
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
P
@T
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.72
R
θ
CS
Case-to-Sink, Flat Greased Surface 0.50 –––
R
θ
JA
Junction-to-Ambient ––– 62
°C/W
A
°C
300
238
See Fig. 14, 15, 22a, 22b
208
Max.
208
147
772
120
560
-55 to + 175
± 20
1.4
10lbf in (1.1N m)
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.0 2.5 mΩ
––– 3.0 ––– mΩ
V
GS(th)
Gate Threshold Voltage 2.2 3.0 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.6 ––– Ω
Conditions
V
GS
= 0V, I
= 250μA
Reference to 25°C, I
= 5.0mA
V
GS
= 10V, I
= 100A
V
GS
= 6.0V, I
= 50A
V
GS
= -20V
V
DS
= 40V, V
GS
= 0V
V
DS
= V
GS
, I
= 100μA
V
GS
= 20V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
Diode Characteristics shnwmg me n nchon mode, - x ‘ 2014 International Reamer
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFS7440PbF/IRFSL7440PbF
S
D
G
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 88 ––– ––– S
Q
g
Total Gate Charge ––– 90 135 nC
Q
gs
Gate-to-Source Charge ––– 23 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 32 –––
Q
syn c
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 58 –––
t
d(on)
Turn-On Delay Time ––– 24 ––– ns
t
r
Rise Time –––68–––
t
d(off)
Turn-Off Delay Time ––– 115 –––
t
f
Fall Time ––– 68 –––
C
iss
Input Capacitance ––– 4730 ––– pF
C
oss
Output Capacitance ––– 680 –––
C
rss
Reverse Transfer Capacitance ––– 460 –––
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 845 –––
C
oss
eff. (TR) Effective Output Capacitance (Time Related) ––– 980 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
Continuous Source Current ––– ––– 208 A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 772 A
(Body Diode)
V
SD
Diode Forward Voltage ––– 0.9 1.3 V
dv/dt Peak Diode Recovery ––– 6.8 ––– V/ns
t
rr
Revers e Recovery Time ––– 24 ––– ns T
J
= 25°C V
= 34V,
–––28––– T
J
= 125°C I
F
= 100A
Q
rr
Revers e Recovery Charge ––– 17 ––– nC T
J
= 25°C di/dt = 100A/μs
–––20––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.3 ––– A T
J
= 25°C
Conditions
V
DS
= 10V, I
= 100A
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
V
DS
=20V
ƒ = 1.0 MHz
T
J
= 175°C, I
= 100A, V
DS
= 40V
I
= 100A
I
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
DD
= 20V
I
= 100A, V
DS
=0V, V
GS
= 10V
T
J
= 25°C, I
= 100A, V
GS
= 0V
integral reverse
p-n junction diode.
MOSFET symbol
showing the
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
- emmer
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IRFS7440PbF/IRFSL7440PbF
Fig 3. Typical Output Characteristics
Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature
Fig 4. Typical Output Characteristics
Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3456789
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 10V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 100A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
ID= 100A
5R — FERAT‘ON IN TH‘S - f 2014 International Reamer
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IRFS7440PbF/IRFSL7440PbF
Fig 10. Maximum Safe Operating Area
Fig 11. Drain-to-Source Breakdown Voltage
Fig 9. Typical Source-Drain Diode
Forward Voltage
Fig 12. Typical COSS Stored Energy
Fig 13. Typical On-Resistance vs. Drain Current
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0100 200 300 400 500 600 700 800
ID, Drain Current (A)
0
10
20
30
40
RDS(on), Drain-to -Source On Resistance (mΩ)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
40
41
42
43
44
45
46
47
48
49
50
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5.0mA
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
Energy (μJ)
VDS= 0V to 32V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
DC
Limited by
package
ates INGLE PULSE 1 Duty Factor D :11/«2 pu‘sewxdm, tav, assuming lanche Curre pu‘sewxdlh, (av‘ n emmer
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IRFS7440PbF/IRFSL7440PbF
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
/ l / / uA/ 3 mA \\ \\ \ , _ . _____ ’ . , , ,. ’. , . . . “/ O 2014 International Reamer
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IRFS7440PbF/IRFSL7440PbF
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 20 - Typical Stored Charge vs. dif/dtFig. 19 - Typical Recovery Current vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
VGS(th), Gate threshold Voltage (V)
ID = 100μA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/μs)
1
2
3
4
5
6
7
8
IRRM (A)
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
1
2
3
4
5
6
7
8
IRRM (A)
IF = 100A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
40
50
60
70
80
90
100
110
QRR (nC)
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
0
20
40
60
80
100
QRR (nC)
IF = 100A
VR = 34V
TJ = 25°C
TJ = 125°C
RT? 1 i I /( k7 J 7/ a emifier h
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IRFS7440PbF/IRFSL7440PbF
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T. VDS
ID
IG
3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
‘ 1 x ‘ w J \‘x WM [U m . E 1? ‘ ‘ \E“ YL[7\ [7,:m,7 ‘ WE“ WE ; ‘E‘ 7” “km [HE] ‘ A 7 L \E“ E Y‘LE‘L FL7H imwn -[ ]: wwg-s‘g 7 7va5 1mm rm: L7H , ‘ l \YHE"L : T H7 HH‘I \‘E‘ [L :E \[w L‘7 7L‘T .z‘am L‘ ‘ ‘ 7r 7.,r. E m ‘54-4 L-EH rw ‘5‘ \H m: r 1 [E mEr7 , - / 7 ‘ ‘ E ‘ ‘ LE7 ‘ [I a ‘ 7 ‘ \E /‘ *7 [T \E E [\E H ‘ V 7TH E L 77-: L' ’ ’ HFY 1 ,, L/ 7 7 7 7TE L 7‘ 7 g \ ”R m 2014 Imernafional Remifier
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFS7440PbF/IRFSL7440PbF
D2Pak (TO-263AB) Part Marking Information
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRFS7440 IRFS7440
PYWW? YWWP
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
LC LC
PART NUMBER
OR ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC LC
PART NUMBER
at: ectifier
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFS7440PbF/IRFSL7440PbF
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRFSL7440
PYWW?
IRFSL7440
YWWP
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
PART NUMBER
OR
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC LC
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
LC LC
ul: (_ 13“ 2014 Imemafional Remifier
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFS7440PbF/IRFSL7440PbF
D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
M Industrial NSLi T Qualification standards can be found at International Rectifiers web site: Date Comment - Updated data sheet based on corporate iempiaie - Updated package outline and pan marking on page 9 a to, . 509 International I==R Rectifier ectifier
12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFS7440PbF/IRFSL7440PbF
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
 Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
D2Pak
TO-262
RoHS compliant
(per JEDEC JESD47F
†††
guidelines)
Yes
Qualification information
†
Industrial
††
Qualification level
MSL1
(per JE DEC J-S T D-020D
†††
)
Moisture Sensitivity Level
Revision History
Date
Comment
•
Updated data sheet based on corporate template.
•
Updated package outline and part marking on page 9 & 10.
• Updated E
AS (L =1mH)
= 560mJ on page 2
• Updated note 9 “Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50Ω, I
AS
= 34A, V
GS
=10V”. on page 2
4/30/2014
11/19/2014