GSOT(03-36)C Datasheet by Vishay General Semiconductor - Diodes Division

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VISHAY. I.» Hfl r» ® 2:45 U RoHS cowum mmezu FREE GREEN www.vi5hay.com/doc?99912 SPIOE so Mode‘s Mode‘s ESDprotchan'fiwshay com www.v\shay,com/doc?91000
GSOT03C to GSOT36C
www.vishay.com Vishay Semiconductors
Rev. 2.9, 17-Apr-2019 1Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Two-Line ESD Protection in SOT-23
MARKING (example only)
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
Two-line ESD protection device
ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
Space saving SOT-23 package
•e3 - Sn
AEC-Q101 qualified available
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
20512
1
20456
2
3
1
20357
YYY
XX
XX
3
3
D
D
3
D
3D Models
Models
Available
Available
ORDERING INFORMATION
PART
NUMBER
(EXAMPLE)
ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE
ORDERING CODE
(EXAMPLE)
AEC-Q101
QUALIFIED
RoHS-COMPLIANT +
LEAD (Pb)-FREE TIN
PLATED
3K PER 7" REEL
(8 mm TAPE),
15K/BOX = MOQ
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
STANDARD GREEN
GSOT05C- E 3 -08 GSOT05C-E3-08
GSOT05C- G 3 -08 GSOT05C-G3-08
GSOT05C- H E 3 -08 GSOT05C-HE3-08
GSOT05C- H G 3 -08 GSOT05C-HG3-08
GSOT05C- E 3 -18 GSOT05C-E3-18
GSOT05C- G 3 -18 GSOT05C-G3-18
GSOT05C- H E 3 -18 GSOT05C-HE3-18
GSOT05C- H G 3 -18 GSOT05C-HG3-18
PACKAGE DATA
DEVICE
NAME
PACKAGE
NAME
TYPE
CODE
ENVIRONMENTAL
STATUS WEIGHT
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
GSOT03C SOT-23 03C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
C1G Green 8.1 mg
GSOT04C SOT-23 04C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
C8G Green 8.1 mg
GSOT05C SOT-23 05C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
C2G Green 8.1 mg
GSOT08C SOT-23 08C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
C3G Green 8.1 mg
GSOT12C SOT-23 12C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
C4G Green 8.1 mg
GSOT15C SOT-23 15C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
C5G Green 8.1 mg
GSOT24C SOT-23 24C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
C6G Green 8.1 mg
GSOT36C SOT-23 36C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
C7G Green 8.1 mg
VISHAY. ESDprotecnan@wshay com www.v\shay,com/doc?91000
GSOT03C to GSOT36C
www.vishay.com Vishay Semiconductors
Rev. 2.9, 17-Apr-2019 2Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS GSOT03C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
30 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 30 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
369 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 504 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT04C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
30 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 30 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
429 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 564 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT05C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
30 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 30 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
480 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 612 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature TSTG -55 to +150 °C
VISHAY. ESDprotecnan@wshay com www.v\shay,com/doc?91000
GSOT03C to GSOT36C
www.vishay.com Vishay Semiconductors
Rev. 2.9, 17-Apr-2019 3Document Number: 85824
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS GSOT08C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
18 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 18 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
345 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 400 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT12C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
12 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 12 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
312 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 337 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT15C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
8A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 8A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
345 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 400 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature TSTG -55 to +150 °C
VISHAY. ESDprotecnan@wshay com www.v\shay,com/doc?91000
GSOT03C to GSOT36C
www.vishay.com Vishay Semiconductors
Rev. 2.9, 17-Apr-2019 4Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS GSOT24C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
5A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 5A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
235 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 240 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT36C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
3.5 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 3.5 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
248 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 252 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature TSTG -55 to +150 °C
VISHAY. ESDgroIectmn@wshay.com www.v\shay.cam/doc791000
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Rev. 2.9, 17-Apr-2019 5Document Number: 85824
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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BiAs-MODE (2-line Bidirectional Asymmetrical protection mode)
With the GSOTxxC two signal- or data-lines (L1, L2) can be protected against voltage transients. With pin 3 connected to ground
and pin 1 and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode
between pin 2 and pin 3 and between pin 1 and pin 3 offers a high isolation to the ground line. The protection device behaves
like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
Clamping Voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxxC clamping behavior is Bidirectional and
Asymmetrical (BiAs).
If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in
parallel in order to “double” the performance.
This offers:
double surge power = double peak pulse current (2 x IPPM)
half of the line inductance = reduced clamping voltage
half of the line resistance = reduced clamping voltage
double line capacitance (2 x CD)
double reverse leakage current (2 x IR)
ELECTRICAL CHARACTERISTICS GSOT03C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse stand-off voltage Max. reverse working voltage VRWM --3.3V
Reverse voltage at IR = 100 μA VR3.3 - - V
Reverse current at VR = 3.3 V IR- - 100 μA
Reverse breakdown voltage at IR = 1 mA VBR 4.0 4.6 5.5 V
Reverse clamping voltage at IPP = 1 A VC
-5.77.5V
at IPP = IPPM = 30 A - 10 12.3 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 420 600 pF
at VR = 1.6 V; f = 1 MHz - 260 - pF
L1
L2
20358
2 1
3
Ground
BiAs
L1
20359
2 1
3
Ground
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Rev. 2.9, 17-Apr-2019 6Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT04C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse stand-off voltage Max. reverse working voltage VRWM --4V
Reverse voltage at IR = 20 μA VR4--V
Reverse current at VR = 4 V IR--20μA
Reverse breakdown voltage at IR = 1 mA VBR 56.17 V
Reverse clamping voltage at IPP = 1 A VC
-7.59 V
at IPP = IPPM = 30 A - 11.2 14.3 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 310 450 pF
at VR = 2 V; f = 1 MHz - 200 - pF
ELECTRICAL CHARACTERISTICS GSOT05C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse stand-off voltage Max. reverse working voltage VRWM --5V
Reverse voltage at IR = 10 μA VR5--V
Reverse current at VR = 5 V IR--10μA
Reverse breakdown voltage at IR = 1 mA VBR 66.88 V
Reverse clamping voltage at IPP = 1 A VC
-78.7V
at IPP = IPPM = 30 A - 12 16 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 260 350 pF
at VR = 2.5 V; f = 1 MHz - 150 - pF
ELECTRICAL CHARACTERISTICS GSOT08C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse stand-off voltage Max. reverse working voltage VRWM --8V
Reverse voltage at IR = 5 μA VR8--V
Reverse current at VR = 8 V IR--5μA
Reverse breakdown voltage at IR = 1 mA VBR 91011V
Reverse clamping voltage at IPP = 1 A VC
- 10.7 13 V
at IPP = IPPM = 18 A - 15.2 19.2 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 18 A - 3 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 160 250 pF
at VR = 4 V; f = 1 MHz - 80 - pF
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Rev. 2.9, 17-Apr-2019 7Document Number: 85824
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT12C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse stand-off voltage Max. reverse working voltage VRWM --12V
Reverse voltage at IR = 1 μA VR12 - - V
Reverse current at VR = 12 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 13.5 15 16.5 V
Reverse clamping voltage at IPP = 1 A VC
- 15.4 18.7 V
at IPP = IPPM = 12 A - 21.2 26 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 12 A - 2.2 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 115 150 pF
at VR = 6 V; f = 1 MHz - 50 - pF
ELECTRICAL CHARACTERISTICS GSOT15C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse stand-off voltage Max. reverse working voltage VRWM --15V
Reverse voltage at IR = 1 μA VR15 - - V
Reverse current at VR = 15 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 16.5 18 20 V
Reverse clamping voltage at IPP = 1 A VC
- 19.4 23.5 V
at IPP = IPPM = 8 A - 24.8 28.8 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 8 A - 1.8 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 90 120 pF
at VR = 7.5 V; f = 1 MHz - 35 - pF
ELECTRICAL CHARACTERISTICS GSOT24C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse stand-off voltage Max. reverse working voltage VRWM --24V
Reverse voltage at IR = 1 μA VR24 - - V
Reverse current at VR = 24 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 27 30 33 V
Reverse clamping voltage at IPP = 1 A VC
-3441V
at IPP = IPPM = 5 A - 41 47 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 5 A - 1.4 - V
Capacitance at VR = 0 V; f = 1 MHz CD
-6580pF
at VR = 12 V; f = 1 MHz - 20 - pF
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BiSy-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough
voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
ELECTRICAL CHARACTERISTICS GSOT36C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse stand-off voltage Max. reverse working voltage VRWM --36V
Reverse voltage at IR = 1 μA VR36 - - V
Reverse current at VR = 36 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 39 43 47 V
Reverse clamping voltage at IPP = 1 A VC
-4960V
at IPP = IPPM = 3.5 A - 59 71 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 3.5 A - 1.3 - V
Capacitance at VR = 0 V; f = 1 MHz CD
-5265pF
at VR = 18 V; f = 1 MHz - 12 - pF
L1
20361
2 1
3
Ground
BiSy
ELECTRICAL CHARACTERISTICS GSOT03C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --3.8V
Reverse voltage at IR = 100 μA VR3.8 - - V
Reverse current at VR = 3.8 V IR- - 100 μA
Reverse breakdown voltage at IR = 1 mA VBR 4.5 5.3 6.2 V
Reverse clamping voltage at IPP = 1 A VC
-78.4V
at IPP = IPPM = 30 A - 14 16.8 V
Capacitance at VR = 0 V; f = 1 MHz CD
- 210 300 pF
at VR = 1.6 V; f = 1 MHz - 190 - pF
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ELECTRICAL CHARACTERISTICS GSOT04C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --4.5V
Reverse voltage at IR = 20 μA VR4.5 - - V
Reverse current at VR = 4.5 V IR--20μA
Reverse breakdown voltage at IR = 1 mA VBR 5.5 6.8 7.7 V
Reverse clamping voltage at IPP = 1 A VC
-7.59 V
at IPP = IPPM = 30 A - 15.7 18.8 V
Capacitance at VR = 0 V; f = 1 MHz CD
- 155 225 pF
at VR = 2 V; f = 1 MHz - 135 - pF
ELECTRICAL CHARACTERISTICS GSOT05C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --5.5V
Reverse voltage at IR = 10 μA VR5.5 - - V
Reverse current at VR = 5.5 V IR--10μA
Reverse breakdown voltage at IR = 1 mA VBR 6.5 7.5 8.7 V
Reverse clamping voltage at IPP = 1 A VC
-8.19.7V
at IPP = IPPM = 30 A - 17 20.4 V
Capacitance at VR = 0 V; f = 1 MHz CD
- 130 175 pF
at VR = 4 V; f = 1 MHz - 100 - pF
ELECTRICAL CHARACTERISTICS GSOT08C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --8.5V
Reverse voltage at IR = 5 μA VR8.5 - - V
Reverse current at VR = 8.5 V IR--5μA
Reverse breakdown voltage at IR = 1 mA VBR 9.5 10.7 11.7 V
Reverse clamping voltage at IPP = 1 A VC
- 11.7 14 V
at IPP = IPPM = 18 A - 18.5 22.2 V
Capacitance at VR = 0 V; f = 1 MHz CD
- 80 125 pF
at VR = 4 V; f = 1 MHz - 60 - pF
ELECTRICAL CHARACTERISTICS GSOT12C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM - - 12.5 V
Reverse voltage at IR = 1 μA VR12.5 - - V
Reverse current at VR = 12.5 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 13.5 15.7 16.5 V
Reverse clamping voltage at IPP = 1 A VC
- 16.4 19.7 V
at IPP = IPPM = 12 A - 23.4 28.1 V
Capacitance at VR = 0 V; f = 1 MHz CD
-5875pF
at VR = 7.5 V; f = 1 MHz - 36 - pF
VISHAY. ESDprolcham’Qwshay com www.v\shay.com/doc?91000
GSOT03C to GSOT36C
www.vishay.com Vishay Semiconductors
Rev. 2.9, 17-Apr-2019 10 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT15C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM - - 15.5 V
Reverse voltage at IR = 1 μA VR15.5 - - V
Reverse current at VR = 15.5 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 17 18.7 20.7 V
Reverse clamping voltage at IPP = 1 A VC
- 20.4 24.5 V
at IPP = IPPM = 8 A - 26.6 30.6 V
Capacitance at VR = 0 V; f = 1 MHz CD
-4560pF
at VR = 7.5 V; f = 1 MHz - 25 - pF
ELECTRICAL CHARACTERISTICS GSOT24C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM - - 24.5 V
Reverse voltage at IR = 1 μA VR24.5 - - V
Reverse current at VR = 24.5 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 27.5 30.7 33.7 V
Reverse clamping voltage at IPP = 1 A VC
-3441V
at IPP = IPPM = 5 A - 40 48 V
Capacitance at VR = 0 V; f = 1 MHz CD
-3340pF
at VR = 12 V; f = 1 MHz - 18 - pF
ELECTRICAL CHARACTERISTICS GSOT36C (Tamb = 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM - - 36.5 V
Reverse voltage at IR = 1 μA VR36.5 - - V
Reverse current at VR = 36.5 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 39.5 43.7 47.7 V
Reverse clamping voltage at IPP = 1 A VC
-5060V
at IPP = IPPM = 3.5 A - 60 72 V
Capacitance at VR = 0 V; f = 1 MHz CD
-2633pF
at VR = 18 V; f = 1 MHz - 10 - pF
VISHAY. ESDgrUIectIon®wshay Com www.v\shay.CUm/doc?91000
GSOT03C to GSOT36C
www.vishay.com Vishay Semiconductors
Rev. 2.9, 17-Apr-2019 11 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 2 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 4 - ESD Discharge Current Waveform
According to IEC 61000-4-2 (330 / 150 pF)
Fig. 5 - 8/20 μs Peak Pulse Current Waveform
According to IEC 61000-4-5
Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current
10
100
1000
10000
0.001
10
100
0.5 0.6 0.7 0.8 0.9
Axis Title
1st line
2nd line
2nd line
1
0.1
0.01
Pin 3 to 1 or pin 3 to 2
VF (V)
IF (mA)
10
100
1000
10000
0
45
50
0.01 100 10 000
Axis Title
1st line
2nd line
2nd line
1
40
35
30
25
20
15
10
5
Pin 1 to 3 or pin 2 to 3
IR (µA)
VR (V)
TJ = 25 °C
GSOT12C
GSOT15C
GSOT08C
GSOT24C
GSOT36C
10
100
1000
10000
0
7
8
0.01 100 10 000
Axis Title
1st line
2nd line
2nd line
1
6
5
4
3
2
1
Pin 1 to 3 or pin 2 to 3
IR (µA)
VR (V)
TJ = 25 °C GSOT03C
GSOT04C
GSOT05C
10
100
1000
10000
0
20
40
60
80
100
120
-10 0 10 20 30 40 50 60 70 80 90 100
Axis Title
1st line
2nd line
2nd line
IESD (%)
t (ns)
Rise time = 0.7 ns to 1 ns
53
27
10
100
1000
10000
0
20
40
60
80
100
0 10203040
Axis Title
1st line
2nd line
2nd line
IPPM (%)
t (µs)
8 µs to 100 %
20 µs to 50 %
10
0
5
10
15
20
25
30
35
40
0 20406080100
2nd line
VC-TLP (V)
ITLP (A)
Transmission line pulse (TLP):
GSOT15
GSOT12
GSOT08
GSOT05
GSOT04
GSOT03
VISHAY. // x ,7 / // /§— ” // J—‘ ‘ //’ ’f H ‘gff:”’ ‘ ‘ ‘ Gx mm ESDgrUIectIon®wshay Com www.v\shay.CUm/doc?91000
GSOT03C to GSOT36C
www.vishay.com Vishay Semiconductors
Rev. 2.9, 17-Apr-2019 12 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Clamping Voltage vs. Peak Pulse Current
Fig. 8 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 9 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 10 - Typical Capacitance vs. Reverse Voltage
0
20
40
60
80
100
120
0 20406080100
2nd line
VC-TLP (V)
ITLP (A)
Transmission line pulse (TLP):
GSOT36
GSOT24
100
1000
10000
1st line
2nd line
100
5
10
15
20
25
30
0204060
2nd line
VC(V)
IPP (A)
Measured according IEC 61000-4-5
(8/20 µs - wave form)
GSOT12C
GSOT15C
GSOT08C
GSOT04C
GSOT05C
GSOT03C
Axis Title
100
1000
10000
1st line
2nd line
100
5
10
15
20
25
30
35
40
45
50
55
60
65
0246810
2nd line
VC(V)
IPP (A)
Measured according IEC 61000-4-5
(8/20 µs - wave form)
GSOT36C
GSOT24C
Axis Title
10
100
1000
10000
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
CD(pF)
VR(V)
f = 1 MHz
GSOT12C
GSOT15C
GSOT08C
GSOT04C
GSOT05C
GSOT03C
GSOT24C
GSOT36C
— VISHAY. V 23 ESD rotecnan@wsha com www.msha .com/d05791000
GSOT03C to GSOT36C
www.vishay.com Vishay Semiconductors
Rev. 2.9, 17-Apr-2019 13 Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
Foot print recommendation:
Rev. 8 - Date: 23. Sep. 2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
SOT-23
Top view
Unreeling direction
Orientation in carrier tape
SOT-23
S8-V-3929.01-006 (4)
04.02.2010
22607
— VISHAY. V
Legal Disclaimer Notice
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Revision: 01-Jan-2019 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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