TC7SH32F(FU) Datasheet by Toshiba Semiconductor and Storage

TOSHIBA F SSOP5-P-035 (SMV) U l_l l_l H 4 l_l l_l l_l SSOVSVPVDjSA (USV) Absolute Maximum Ratin Characteristics Symb Supply voltage vcc DC input voltage VIN DC output voltage VQUT 70,5 to vcc + 0.5 v input diode current llK 720 mA Output diode current IOK :20 (Notel) mA IN A 2 DC output current Iour :25 mA DC Veg/ground current Ice :50 mA GND 3 Power dissipation PD 200 mw Storage temperature my 765 to t50 "c Lead temperature (it) 5) TL 260 "c Note. Using continuously under heavy loads (e.g. the application of high temperature/current/vo significant change in temperature, etc.) may cause this product to decrease in the reliability sign the operating conditions (i e operating temperature/current/voltage. etc.) are within the abso ratings and the operating ranges. Please design the appropriate reliability upon reviewmg the Toshiba Semiconductor Reliab (“Handling Precautions"/“Deratmg Concept and Methods") and individual reliability data he. relia and estimated failure rate. etc). Note1: voUT < gnd.="" vout=""> vcc 1 2009—09-09
TC7SH32F/FU
2009-09-09
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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH32F, TC7SH32FU
2-Input OR Gate
Features
High speed operation : tpd = 3.8ns (typ.) at VCC = 5V, 15pF
Low power dissipation : ICC = 2μA (max) at Ta = 25°C
High noise immunity : VNIH = VNIL = 28% VCC (min)
5.5-V tolerant inputs
Wide operating voltage range : VCC= 2 to 5.5V
Marking
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note1: VOUT < GND, VOUT > VCC
TC7SH32F
TC7SH32FU
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Characteristics Symbol Rating Unit
Supply voltage VCC 0.5 to 7 V
DC input voltage VIN 0.5 to 7 V
DC output voltage VOUT 0.5 to VCC + 0.5 V
Input diode current IIK 20 mA
Output diode current IOK ±20 (Note1) mA
DC output current IOUT ±25 mA
DC VCC/ground current ICC ±50 mA
Power dissipation PD 200 mW
Storage temperature Tstg 65 to 150 °C
Lead temperature (10 s) TL 260 °C
Product name
H 4
5 VCC
4 OUT Y
IN A 2
GND 3
IN B 1
Pin Assignment (top view)
TOSHIBA INA Operatin Supp‘y vu Inpu: voHa Output vu Operahng Inpu: nse 2009-09-09
TC7SH32F/FU
2009-09-09
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IEC Logic Symbol Truth Table
A B Y
L L L
L H H
H L H
H H H
Operating Ranges
Characteristics Symbol Rating Unit
Supply voltage VCC 2 to 5.5 V
Input voltage VIN 0 to 5.5 V
Output voltage VOUT 0 to VCC V
Operating temperature Topr 40 to 85 °C
0 to 100 ( VCC = 3.3 V ± 0.3 V )
Input rise and fall time dt/dv
0 to 20 ( VCC = 5.0 V ± 0.5 V )
ns/V
IN A
>
1
IN B
OUT Y
TOSHIBA 2009-09-09
TC7SH32F/FU
2009-09-09
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Electrical Characteristics
DC Characteristics
Ta = 25°C Ta = 40 to 85°C
Characteristics Symbol Test Condition
VCC (V) Min Typ. Max Min Max
Unit
2.0 1.5 1.5
High-level input
voltage VIH
3.0 to 5.5 VCC
× 0.7 VCC
× 0.7
2.0 0.5 0.5
Low-level input
voltage VIL
3.0 to 5.5 VCC
× 0.3 VCC
× 0.3
V
2.0 1.9 2.0 1.9
3.0 2.9 3.0 2.9
IOH = 50 μA
4.5 4.4 4.5 4.4
IOH = −4 mA 3.0 2.58 2.48
High-level output
voltage VOH VIN = VIH
or VIL
IOH = 8 mA 4.5 3.94
3.80
2.0 0 0.1 0.1
3.0 0 0.1 0.1
IOL = 50 μA
4.5 0 0.1 0.1
IOL = 4 mA 3.0 0.36 0.44
Low-level output
voltage VOL V
IN = VIL
IOL = 8 mA 4.5 0.36 0.44
V
Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 μA
Quiescent supply
current ICC VIN = VCC or GND 5.5 2.0 20.0 μA
TOSHIBA 2009-09-09
TC7SH32F/FU
2009-09-09
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AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns)
Test Condition Ta = 25°C Ta = 40 to 85°C
Characteristics Symbol
V
CC (V) CL (pF) Min Typ. Max Min Max
Unit
15 5.5 7.9 1.0 9.5
3.3 ± 0.3
50 8.0 11.4 1.0 13.0
15 3.8 5.5 1.0 6.5
Propagation delay time
tPLH
tPHL
5.0 ± 0.5
50 5.3 7.5 1.0 8.5
ns
Input capacitance CIN 4 10 10 pF
Power dissipation capacitance CPD (Note 2) 15 pF
Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation.
ICC (opr) = CPDVCCfIN + ICC
TOSHIBA Unit : mm SSOPS-P—0.95 NOHQN «.010 2009—09-09
TC7SH32F/FU
2009-09-09
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Package Dimensions
Weight: 0.016 g (typ.)
TOSHIBA SSOPS-P—0.65A Unit : mm 2.1 $0.1 1.25i0.1
TC7SH32F/FU
2009-09-09
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Package Dimensions
Weight: 0.006 g (typ.)
TOSHIBA 2009-09-09
TC7SH32F/FU
2009-09-09
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