MBRT20045 thru MBRT200100R Datasheet by GeneSiC Semiconductor

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VRRM = 45 V - 100 V
IF(AV) = 200 A
Features
• High Surge Capability Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Parameter Symbol MBRT20045(R) MBRT20060(R) Unit
Repetitive peak reverse voltage
VRRM 45 60 V
RMS reverse voltage
VRMS 32 42 V
DC blocking voltage
VDC 45 60 V
Operating temperature
Tj-55 to 150 -55 to 150 °C
Storage temperature
Tstg -55 to 150 -55 to 150 °C
Parameter Symbol MBRT20045(R) MBRT20060(R) Unit
Average forward current (per
pkg)
IF(AV) 200 200 A
Maximum instantaneous
forward voltage (per leg)
0.70 0.75
1 1
10 10
30 30
Thermal characteristics
Thermal resistance, junction-
case (per leg)
RΘJC 0.45 0.45 °C/W
80
56
MBRT20080(R)
-55 to 150
70
100
80
mA
0.45
0.45
30
Tj = 25 °C
IFM = 100 A, Tj = 25 °C
Conditions
Tj = 100 °C
10
1500
200
200
10
1500
1500
0.84
0.84
1
1
MBRT20080(R)
TC = 125 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
IR
VF
30
-55 to 150
Tj = 150 °C
tp = 8.3 ms, half sine
1500
MBRT20045 thru MBRT200100R
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
• Types from 45 V to 100 V VRRM
MBRT200100(R)
A
V
IFSM
-55 to 150
Conditions
100
-55 to 150
MBRT200100(R)
1
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt200100.pdf
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MBRT20045 thru MBRT200100R
2
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt200100.pdf
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBRT20045 thru MBRT200100R
3
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrt200100.pdf

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