MBR60020CT thru MBR60040CTR Datasheet by GeneSiC Semiconductor

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VRRM = 20 V - 40 V
IF(AV) = 600 A
Features
• High Surge Capability Twin Tower Package
• Not ESD Sensitive
Parameter Symbol MBR60020CT(R) MBR60030CT(R) Unit
Repetitive peak reverse
voltage
VRRM 20 30 V
RMS reverse voltage
VRMS 14 21 V
DC blocking voltage
VDC 20 30 V
Operating temperature
Tj-55 to 150 -55 to 150 °C
Storage temperature
Tstg -55 to 150 -55 to 150 °C
Parameter Symbol MBR60020CT(R) MBR60030CT(R) Unit
Average forward current
(per pkg)
IF(AV) 600 600 A
Maximum forward
voltage (per leg)
0.75 0.75
1 1
10 10
50 50
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC 0.28 0.28 °C/W
• Types from 20 V to 40 V VRRM
TC = 125 °C
600
600
Peak forward surge
current (per leg)
IFSM
tp = 8.3 ms, half sine
4000
4000
4000
V
-55 to 150
-55 to 150
Conditions
40
28
40
35
A
0.28
0.75
0.75
50
Tj = 100 °C
10
10
MBR60020CT thru MBR60040CTR
Tj = 25 °C
IFM = 300 A, Tj = 25 °C
Conditions
MBR60040CT(R)
35
25
MBR60035CT(R)
-55 to 150
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
-55 to 150
MBR60040CT(R)
1
1
MBR60035CT(R)
mA
Silicon Power
Schottky Diode
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at rated
DC blocking voltage
(per leg)
IR
VF
50
0.28
Tj = 150 °C
1
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr60020ctr.pdf
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MBR60020CT thru MBR60040CTR
2
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr60020ctr.pdf
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBR60020CT thru MBR60040CTR
3
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr60020ctr.pdf

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