MBR40045CT thru MBR400100CTR Datasheet by GeneSiC Semiconductor

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VRRM = 45 V - 100 V
IF(AV) = 400 A
Features
• High Surge Capability Twin Tower Package
• Not ESD Sensitive
Parameter Symbol MBR40045CT(R) MBR40060CT(R) Unit
Repetitive peak reverse
voltage
VRRM 45 60 V
RMS reverse voltage
VRMS 32 42 V
DC blocking voltage
VDC 45 60 V
Operating temperature
Tj-55 to 150 -55 to 150 °C
Storage temperature
Tstg -55 to 150 -55 to 150 °C
Parameter Symbol MBR40045CT(R) MBR40060CT(R) Unit
Average forward current
(per pkg)
IF(AV) 400 400 A
Maximum forward
voltage (per leg)
0.70 0.75
1 1
10 10
50 50
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC 0.35 0.35 °C/W
• Types from 45 V to 100 V VRRM
TC = 125 °C
400
400
Peak forward surge
current (per leg)
IFSM
tp = 8.3 ms, half sine
3000
3000
3000
MBR400100CT(R)
Silicon Power
Schottky Diode
-55 to 150
-55 to 150
Conditions
100
70
100
80
-55 to 150
MBR40080CT(R)
0.35
Tj = 150 °C
0.35
0.84
0.84
50
A
MBR40045CT thru MBR400100CTR
Tj = 25 °C
IFM = 200 A, Tj = 25 °C
Conditions
MBR400100CT(R)
80
57
MBR40080CT(R)
-55 to 150
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
1
1
Reverse current at rated
DC blocking voltage
(per leg)
IR
VF
V
Tj = 100 °C
10
10
mA
50
1
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr400100ct.pdf
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MBR40045CT thru MBR400100CTR
2
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr400100ct.pdf
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBR40045CT thru MBR400100CTR
3
Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr400100ct.pdf

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