PJA3432-AU Datasheet by Panjit International Inc.

PAN- sum CONDUCTOR Ves 4.5V H
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30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage 30 V Current 1.6 A SOT-23
Features
RDS(ON), VGS@4.5V, ID@1.6A<200m
RDS(ON), VGS@2.5V, ID@1.1A<270m
RDS(ON), VGS@1.8V, ID@0.2A<570m
Advanced Trench Process Technology
ESD Protected 2KV HBM
Specially Designed for Switch Load, PWM Application, etc
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0003 ounces, 0.0084 grams
PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS +8
Continuous Drain Current(Note 4) ID1.6 A
Pulsed Drain Current(Note 1) IDM 6.4
Power Dissipation Ta=25oCPD1.25 W
Derate above 25oC 10 mW/oC
Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC
Typical Thermal Resistance
- Junction to Ambient(Note 3,4) RθJA 100 oC/W
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PAN-
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Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 30 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 0.5 0.78 1.3
Drain-Source On-State Resistance RDS(on)
VGS=4.5V, ID=1.6A - 145 200
VGS=2.5V, ID=1.1A - 185 270
VGS=1.8V, ID=0.2A - 330 570
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=+8V, VDS=0V - - +10
Dynamic(Note 5)
Total Gate Charge QgVDS=15V, ID=1.6A,
VGS=4.5V(Note 1,2)
- 1.5 -
nCGate-Source Charge Qgs - 0.3 -
Gate-Drain Charge Qgd - 0.3 -
Input Capacitance Ciss VDS=15V, VGS=0V,
f=1.0MHZ
- 93 -
pFOutput Capacitance Coss - 19 -
Reverse Transfer Capacitance Crss - 6 -
Turn-On Delay Time td(on) VDD=15V, ID=1.6A,
VGS=4.5V,
RG=6Ω(Note 1,2)
- 6.4 -
ns
Turn-On Rise Time tr - 33 -
Turn-Off Delay Time td(off) - 37 -
Turn-Off Fall Time tf - 32 -
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current IS--- - - 1 A
Diode Forward Voltage VSD IS=1A, VGS=0V - 0.81 1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%.
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
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TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS Fig.6 Body Diode Characteristics
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TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics Fig.8 Threshold Voltage Variation with Temperature
Fig.9 Capacitance vs. Drain-Source Voltage
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Part No. Packing Code Version
Packaging Information & Mounting Pad Layout
SOT-23 Dimension Unit: inch(mm) SOT-23 Pad Layout Unit: inch(mm)
Part No. Packing Code Package Type Packing Type Marking Version
PJA3432-AU_R1_000A1 SOT-23 3K pcs / 7” reel A32 Halogen free
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
PAN-
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