DMP21D0UT Datasheet by Diodes Incorporated

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DMP21D0UT
Datasheet Number: DS35297 Rev. 2 - 2
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DMP21D0UT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) Max
ID Max
@ TA = 25°C
(Note 4)
-20V
495mΩ @ VGS = -4.5V -0.59A
690mΩ @ VGS = -2.5V -0.50A
960mΩ @ VGS = -1.8V -0.42A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Portable electronics
Features and Benefits
Footprint of just 3mm2 – less than half the size of SOT23
0.8mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate 3KV
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish ; Solderable per MIL-STD-202,
Method 208
Weight: 0.002 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMP21D0UT-7 PBC 7 8 3,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT523
Equivalent CircuitTop View
Internal Schematic
Bottom View
Source
Gate
Protection
Diode
Gate
Drain
GS
D
ESD PROTECTED TO 3kV
PBC YM
PBC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current Steady
State
TA = 25°C (Note 4)
TA = 85°C (Note 4)
TA = 25°C (Note 5)
ID
-0.59
-0.42
-0.65 A
Pulsed Drain Current (Note 6) IDM -5.0 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 0.24 W
Power Dissipation (Note 5) PD 0.33 W
Thermal Resistance, Junction to Ambient (Note 4) RθJA 525 °C/W
Thermal Resistance, Junction to Ambient (Note 5) RθJA 383 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm FR-4 PCB with high coverage of 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (SEC)
Fig. 1 Single Pulse Maximum Power Dissipation
1
0
1
2
3
4
5
6
7
8
9
10
P
(pk),
P
EAK
T
R
ANSIEN
T
P
O
WE
R
(W)
Single Pulse
R = 380°C/W
R (t) = r(t) * R
T - T = P * R (t)
θ
θθ
θ
JA
JA JA
JA JA
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 2 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 380°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -20 - - V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -1
μA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS - - ±10
μA VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
- -0.7 - V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON) - -
495
mΩ
VGS = -4.5V, ID = -400mA
690 VGS = -2.5V, ID = -300mA
960 VGS = -1.8V, ID = -100mA
Forward Transfer Admittance |Yfs| 50 - - mS
VDS = -3V, ID = -300mA
Diode Forward Voltage VSD - - -1.2 V
VGS = 0V, IS = -300mA
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss - 76.5 - pF VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 13.7 - pF
Reverse Transfer Capacitance Crss - 10.7 - pF
Gate Resistance R
g
- 195 - VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Q
g
1.5 - nC VGS = -8V,VDS = -15V,ID = -1A
Total Gate Charge Q
g
- 1.0 - nC VGS = -4.5V, VDS = -15V,
ID = -1A
Gate-Source Charge Q
g
s - 0.2 - nC
Gate-Drain Charge Q
g
d - 0.3 - nC
Turn-On Delay Time tD
(
on
)
- 7.1 - ns
VDS = -10V, -ID = 1A
VGS = -4.5V, RG = 6
Turn-On Rise Time t
r
- 8.0 - ns
Turn-Off Delay Time tD
(
off
)
- 31.7 - ns
Turn-Off Fall Time tf - 18.5 - ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
012345
Fig. 3 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
-I , D
AIN
EN
(A)
D
V = -1.2V
GS
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -4.0V
GS
V = -1.8V
GS
0 0.5 1.0 1.5 2.0 2.5 3.0
Fig. 4 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
0.5
1.0
1.5
2.0
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
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0 0.4 0.8 1.2 1.6 2.0
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0 0.4 0.8 1.2 1.6 2.0
-I , DRAIN CURRENT (A)
D
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
Fig. 7 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.
7
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = -2.5V
I = -250mA
GS
D
V = -5.0V
I = -500mA
GS
D
Fig. 8 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DSON
Ω
V = -5.0V
I = -500mA
GS
D
V = -2.5V
I = -250mA
GS
D
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
1.4
I = -1mA
D
I = -250µA
D
0.4 0.6 0.8 1.0 1.2
Fig. 10 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
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04 8121620
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
-I , LEAKA
E
EN
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
02468
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.12 Leakage Current vs. Gate-Source Voltage
0.1
1
10
100
1,000
10,000
100,000
I, LEAKA
E
EN
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
02468
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.13 Leakage Current vs. Gate-Source Voltage
0.1
1
10
100
1,000
10,000
100,000
I, LEAKA
G
E
C
U
R
R
EN
T
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
1,000
0 2 4 6 8 101214161820
100
10
1
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0
1
2
3
4
5
6
7
8
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Q , TOTAL GATE CHARGE (nC)
Fig. 15 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
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Package Outline Dimensions
Suggested Pad Layout
SOT523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7
A
M
JL
D
BC
H
K
G
N
XE
Y
C
Z
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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