uESD3.3DT5G Series Datasheet by onsemi

View All Related Products | Download PDF Datasheet
ON Semiconductor® www.0nsemi.com 0—h—
© Semiconductor Components Industries, LLC, 2013
October, 2017 Rev. 5
1Publication Order Number:
UESD3.3DT5G/D
mESD3.3DT5G SERIES
ESD Protection Diodes
Ultra Small SOT723 Package
The mESD Series is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast response
time, make these parts ideal for ESD protection on designs where board
space is at a premium. Because of its small size, it is suited for use in
cellular phones, portable devices, digital cameras, power supplies and
many other portable applications.
Specification Features:
Small Body Outline Dimensions:
0.047 x 0.032(1.20 mm x 0.80 mm)
Low Body Height: 0.020 (0.5 mm)
Standoff Voltage: 3.3 V 6.0 V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC6100042 Level 4 ESD Protection
IEC6100044 Level 4 EFT Protection
AECQ101 Qualified and PPAP Capable
These are PbFree Devices
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 6100042 (ESD) Air
Contact
±30
±30
kV
IEC 6100044 (EFT) 40 A
ESD Voltage Per Human Body Model
Per Machine Model
16
400
kV
V
Total Power Dissipation on FR5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance JunctiontoAmbient
PD
RqJA
240
1.9
525
mW
mW/°C
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to
+150
°C
Lead Solder Temperature Maximum
(10 Second Duration)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.62 in.
1
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
Device Package Shipping
ORDERING INFORMATION
UESDxxDT5G SOT723 8000/Tape & Reel
MARKING
DIAGRAM
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
SOT723
CASE 631AA
STYLE 4
3
2
1
xx = Device Code
M = Date Code
xx M
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Max Capacnance @vH
mESD3.3DT5G SERIES
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Ppk Peak Power Dissipation
CMax. Capacitance @VR = 0 and f = 1 MHz
UniDirectional
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
Device
Marking
VRWM (V) IR (mA) @ VRWM
VBR (V) @ IT
(Note 2) ITC (pF)
Max Max Min mA Typ
UESD3.3DT5G L0 3.3 1.0 5.0 1.0 47
UESD5.0DT5G L2 5.0 0.1 6.2 1.0 38
UESD6.0DT5G L3 6.0 0.1 7.0 1.0 34
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
Tek RumLZSGs/s sample nu; x [ Tek Run' 1 2553/; Sample m T [ WW % mum M4“ on; cm I nzv www onsem' com mo M4o.ons cm 1' ,1”
mESD3.3DT5G SERIES
www.onsemi.com
3
TYPICAL CHARACTERISTICS
55 + 25
7.4
Figure 1. Typical Breakdown Voltage
versus Temperature
TEMPERATURE (°C)
+ 150
7.2
7.1
7.0
6.9
6.8
6.3 55
20
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+25
16
12
8
4
0
BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ)
IR (nA)
7.3
+ 150
6.7
6.6
6.5
6.4
18
14
10
6
2
mESDxxDT5G
mESDxxDT5G
Figure 3. Typical Capacitance versus Bias Voltage
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
TEMPERATURE (°C)
FR5 BOARD
PD, POWER DISSIPATION (mW)
0
5
10
15
20
25
30
35
40
45
012345
BIAS VOLTAGE (V)
CAPACITANCE (pF)
mESDxxDT5G
Figure 5. Positive 8 kV contact per IEC 610042
mESD5.0DT5G
Figure 6. Negative 8 kV contact per IEC 6100042
mESD5.0DT5G
¢ SCALE4:1 ”\ k i L SOLDERING FOOTPRINT" 'Fer addmonal mmrmamn on our Pb-Free s1ra1egy and so‘denng delafls‘ p‘ease download me ON Semiconduclov Somering and Meummg Techmques Reference Manual, SOLDEHRM/D. 0N Semiwndudw" n c e HE H5 ‘20 ‘25 L uzQREF L2 ms azn azs GENERIC MARKING DIAGRAM‘ '_‘ XXM ‘ XX : Specific Device Code M : Dale Code “Ms inlormation \s genenc. P‘ease re Io dewce dala Shea for aclual pan mamng, Pia-Free mummy, . or n01 be pvesenl. ON Samaanuuamn and ave hademavks av Semxcanduclur Campunenls lnduslnes. uc dba ON Semxcanduclar Dr K: suhsxdxanes m xna Umled sxaxas andJm mhev cmm‘nes ON Semxcunduclar 1352042: We “gm to make changes wuhum mnna. name to any pruduns nanan ON Semanduc‘m makes nu wanamy. represenlalmn m guarantee regardmg ma mamm at W; manual: can any pamcu‘av purpase nnv dues ON Semumnduclm assume any Mammy snsmg mac xna appncauan m use M any pmduclnv mum and Specmcsfly dwsc‘axms any and an Mammy mc‘udmg wxlham hmma‘mn spema‘ cansequenha‘ m \nmdeula‘ damages ON Semxmnduclar dues nn| away any hcense under Ms Dam nghl: Ivar xna
SOT723
CASE 631AA01
ISSUE D
DATE 10 AUG 2009
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
Y
X
X0.08 Y
2X
E
12
3
XX = Specific Device Code
M = Date Code
GENERIC
MARKING DIAGRAM*
SCALE 4:1
XX M
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
*This information is generic. Please refer
to device data sheet for actual part
marking. PbFree indicator, “G”, may
or not be present.
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON12989D
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SOT723
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 8002829855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative

Products related to this Datasheet

TVS DIODE 5VWM SOT723
Available Quantity: 5,300
Unit Price: 0.43
TVS DIODE 3.3VWM SOT723
Available Quantity: 0
Unit Price: 0.09334
TVS DIODE 5VWM SOT723
Available Quantity: 0
Unit Price: 0.09334
TVS DIODE 6VWM SOT723
Available Quantity: 0
Unit Price: 0.09334
TVS DIODE 3.3VWM SOT723
Available Quantity: 0
Unit Price: 0.44
TVS DIODE 5VWM SOT723
Available Quantity: 0
Unit Price: 0.44
TVS DIODE 6VWM SOT723
Available Quantity: 0
Unit Price: 0.44
TVS DIODE 3.3VWM SOT723
Available Quantity: 0
Unit Price: 0.44
TVS DIODE 5VWM SOT723
Available Quantity: 0
Unit Price: 0.44
TVS DIODE 3.3VWM SOT723
Available Quantity: 0
Unit Price: 0.0892
TVS DIODE 5VWM SOT723
Available Quantity: 0
Unit Price: 0.0892
TVS DIODE 6VWM SOT723
Available Quantity: 0
Unit Price: 0.44
TRANS VOLTAGE SUPPRESSOR DIODE,
Available Quantity: 42,642
Unit Price: 0.07
TRANS VOLTAGE SUPPRESSOR DIODE,
Available Quantity: 0
Unit Price: 0
TRANS VOLTAGE SUPPRESSOR DIODE,
Available Quantity: 18,000
Unit Price: 0.07
TVS DIODE 5VWM SOT723
Available Quantity: 5,300
Unit Price: 0.43