NTP2955 Datasheet by onsemi

MOSFET F? J 0N Semiconductor® www.0nsemi.com L c .NT. W
© Semiconductor Components Industries, LLC, 2015
June, 2019 − Rev. 3
1Publication Order Number:
NTP2955/D
NTP2955
MOSFET – Power, Single,
P-Channel, TO-220
-60 V, -12 A
Features
•Low RDS(on)
•Rugged Performance
•Fast Switching
•These are Pb−Free Devices*
Applications
•Industrial
•Automotive
•Power Supplies
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS −60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current (Note 1)
Steady
State
TC = 25°CID−12 A
TC = 85°C−9.0
Power Dissipation
(Note 1)
TC = 25°C PD62.5 W
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID−2.4 A
TA = 85°C−1.8
Power Dissipation
(Note 1)
TA = 25°C PD2.4 W
Pulsed Drain Current tp =10 msIDM −42 A
Operating Junction and Storage Temperature TJ,
TSTG
−55 to
175
°C
Source Current (Body Diode) IS−12 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = −30 V, VG = −10 V,
IPK = −12 A, L = 3.0 mH, RG = 3.0 W)
EAS 216 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case RqJC 2.4 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA 62.5
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
S
G
P−Channel
−60 V 156 mW @ −10 V
RDS(on) Typ
−12 A
ID MAXV(BR)DSS
Device Package Shipping
ORDERING INFORMATION
TO−220
CASE 221A
STYLE 5
123
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
NTP2955G TO−220
(Pb−Free)
50 Units / Rail
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NT2955G
AYWW
DS
D
G
1
MARKING DIAGRAM
&
PIN ASSIGNMENT
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NTP2955
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2
1. When surface mounted to an FR4 board using 1 in pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
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NTP2955
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3
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ67 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = −48 V
TJ = 25°C−1.0 mA
TJ = 125°C−10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−2.0 −4.0 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ56 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = −10 V, ID = −12 A156 196 mW
Forward Transconductance gFS VDS = −60 V, ID = −12 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
507 700 pF
Output Capacitance COSS 150 250
Reverse Transfer Capacitance CRSS 48 98
Total Gate Charge QG(TOT)
VGS = −10 V, VDS = −48 V,
ID = −12 A
14 nC
Threshold Gate Charge QG(TH) 1.6 2.5
Gate−to−Source Charge QGS 3.4
Gate−to−Drain Charge QGD 6.2
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time td(on)
VGS = −10 V, VDD = −30 V,
ID = −12 A, RG = 9.1 W
10 20 ns
Rise Time tr41 80
Turn−Off Delay Time td(off) 27 47
Fall Time tf45 85
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = −12 A
TJ = 25°C−1.6 −2.0 V
TJ = 125°C−1.36
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −12 A
53
ns
Charge Time ta42
Discharge Time tb12
Reverse Recovery Charge QRR 126 nC
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTP2955
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4
0
5
10
15
20
25
0246810
Figure 1. On−Region Characteristics
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
TJ = 25°C
VGS = −10 V
−9.5 V
−8.0 V
−7.0 V
−6.0 V
−5.5 V
−5.0 V
−4.5 V
−4.0 V
.
0
5
10
15
20
25
0246810
Figure 2. Transfer Characteristics
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
VGS = −10 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
0.1
0.2
0.3
0.4
02468101214
Figure 3. On−Resistance versus Drain Current
and Temperature
−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
T = 125°C
T = 25°C
T = −55°C
VGS = −10 V
0
0.1
0.2
0.3
0.4
0246810121
4
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = −10 V
VGS = −15 V
TJ = 25°C
0
0.5
1.0
1.5
2.0
2.5
−50 −25 0 25 50 75 100 125 150 175
Figure 5. On−Resistance Variation
with Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
ID = −12 A
VGS = −10 V
1
10
100
1000
0 10203040506
0
Figure 6. Drain−to−Source Leakage
versus Voltage
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−IDSS, LEAKAGE (nA)
TJ = 125°C
TJ = 100°C
VGS = 0 V
10m: — Rush", LIMIT THERMAL UMIT
NTP2955
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5
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
−10 −5 0 5 10152025
Figure 7. Capacitance Variation
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = −0 V
−VGS −VDS
VDS = −0 V
CISS
CRSS
CRSS
CISS
COSS
0
2
4
6
8
10
12
0481216
0
10
20
30
40
50
60
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
QG, TOTAL GATE CHARGE, (nC)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID = −12 A
TJ = 25°C
QT
QGD
QGS
VGS
VDS
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
tr
tf
td(off)
td(on)
VDD = −30 V
ID = −12 A
VGS = −10 V
0
2
4
6
8
10
12
14
0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0
Figure 10. Diode Forward Voltage versus
Current
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−IS, SOURCE CURRENT (A)
VGS = −0 V
TJ = 25°C
0.1
1
10
100
1000
0.1 1.0 10 100
10 ms
1 ms
100 ms
10 ms dc
VGS = −10 V
SINGLE PULSE
TJ = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
0
50
100
150
200
250
25 50 75 100 125 150 175
Figure 12. Maximum Avalanche Energy
versus Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
ID = −12 A
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
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