N(V)TA7002N Datasheet by onsemi

MOSFET 0N Semiconductor® 3 T -55 I0 Tm; 150 $5 2 H Commons Source Cunem (Body mode) 15., 154 mA 5075 $51,416 75)” Lead Tempelature for So1denng Puvposes TL 260 ”C CASE 453 |_| LI 11/5" nom case for 10 s) STVLE 5 Slresses exceedmg Maximum Rallngs may damage the dewce. Max1mum T5 : 599”“ Dame 0°“ Ramos are stress Iafings only. Funcnonal operauon above me Recommended M : Date CW9 Operaung Condmons 15 no: 1mplied, Extended exposure 1o suesses above me - : Pb-Fvee Package Recommended Operalmg Condmons may affect dewce rehabilily. wme. Mmmdol may be 1n enher THERMAL RESISTANCE RATINGS Parameter Symbol Max Unlt Junction -m-Ambienl , s1eady Stale (Note 11 Rm 415 “CM 1 Sudace—mounted on FR4 board usmg 1 m sq pad SIZe (Cu avea : 1 127 m so [1 oz] mcmding neeesp n semmdouemempmm Moshe; Lu: 2012 1 Pumcauon Olde May, 2019 — Rev. 5 NT
© Semiconductor Components Industries, LLC, 2012
May, 2019 Rev. 5
1Publication Order Number:
NTA7002N/D
NTA7002N, NVTA7002N
MOSFET – Single,
N-Channel, Small Signal,
Gate ESD Protection, SC-75
30 V, 154 mA
Features
Low Gate Charge for Fast Switching
Small 1.6 x 1.6 mm Footprint
ESD Protected Gate
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant
Applications
Power Management Load Switch
Level Shift
Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDAs, Video Games, HandHeld Computers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DraintoSource Voltage VDSS 30 V
GatetoSource Voltage VGS "10 V
Continuous Drain
Current (Note 1)
Steady State = 25°C ID154 mA
Power Dissipation
(Note 1)
Steady State = 25°C PD300 mW
Pulsed Drain Current tP v 10 msIDM 618 mA
Operating Junction and Storage Temperature TJ,
TSTG
55 to
150
°C
Continuous Source Current (Body Diode) ISD 154 mA
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1) RqJA 416 °C/W
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2.3 W @ 2.5 V
(Top View)
SC75 / SOT416
CASE 463
STYLE 5
2
1
SC75 (3Leads)
Drain
Gate
3
1
2
Source
3
RDS(on)
Typ @ VGS
ID MAX
(Note 1)
V(BR)DSS
1.4 W @ 4.5 V
30 V 154 mA
1
3
2
NChannel
MARKING DIAGRAM
T6 = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
T6 MG
G
1
3
2
PIN CONNECTIONS
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See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
NTA7002N, NVTA7002N
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA30 V
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V,
T = 85 °C
1.0 mA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±25 mA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±1.0 mA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±5 V
T = 85 °C
±1.0 mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 100 mA0.5 1.0 1.5 V
DraintoSource On Resistance RDS(on) VGS = 4.5 V, ID = 154 mA 1.4 7.0
W
VGS = 2.5 V, ID = 154 mA 2.3 7.5
Forward Transconductance gFS VDS = 3 V, ID = 154 mA 80 mS
CAPACITANCES
Input Capacitance CISS
VDS = 5.0 V, f = 1 MHz,
VGS = 0 V
11.5 20
pF
Output Capacitance COSS 10 15
Reverse Transfer Capacitance CRSS 3.5 6.0
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time td(ON)
VGS = 4.5 V, VDS = 5.0 V,
ID = 75 mA, RG = 10 W
13 ns
Rise Time tr15
ns
TurnOff Delay Time td(OFF) 98
Fall Time tf60
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, IS = 154 mA 0.77 0.9 V
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTA7002N, NVTA7002N
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3
TYPICAL PERFORMANCE CURVES
TJ = 125°C
0
0.16
1.60.4
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
0.12
0.04
0
Figure 1. OnRegion Characteristics
0.6 1.4 2
Figure 2. Transfer Characteristics
VGS, GATETOSOURCE VOLTAGE (VOLTS)
1
2
0.5
Figure 3. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
50 025 25
1
0.2
0
50 150
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
0.05
TJ = 55°C
TJ = 125°C
75
TJ = 25°C
ID = 0.15 A
VGS = 4.5 V
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
RDS(on), DRAINTOSOURCE RESISTANCE (W)
1.2
VGS = 2.5 V
0 0.15
1
25
Figure 6. DraintoSource Leakage Current
vs. Voltage
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
15
VGS = 0 V
IDSS, LEAKAGE (nA)
TJ = 150°C
TJ = 125°C
VGS = 4.5 V
10
100
2 V
VDS = 5 V
20
1.4 V
0.08
1.2 V
0.1
30
0.2
0.18 VGS = 10 V
2.5
125100 0
2.0
105
1.20.8 1.2
1.5
0.2
VGS = 4.5 V
TJ = 25°C
TJ = 55°C
ID, DRAIN CURRENT (AMPS)
21000
5 V
2.4 V
1.81
1
2
0.5
0.050 0.150.1
2.5
1.5
0.2
0.4
1.4
0.6
1.6
0.8
1.8
0.14
0.1
0.02
0.06
2.8 V 0.16
0.12
0.04
0
0.08
0.2
0.8 1.6
NTA7002N, NVTA7002N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
0.02
0
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
IS, SOURCE CURRENT (AMPS)
VGS = 0 V
TJ = 25°C
0.16
0.5 0.65
Figure 9. Diode Forward Voltage vs. Current
0.80.6
0.08
0.06
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
5
10 0 5 105
TJ = 25°C
Ciss
Coss
Crss
15
0
20
Ciss
Crss
VDS = 0 V VGS = 0 V
VDS
VGS RG, GATE RESISTANCE (OHMS)
1 10 100
100
10
t, TIME (ns)
VDD = 5.0 V
ID = 75 mA
VGS = 4.5 V
tr
td(on)
1000
tf
td(off)
1
0.04
25
0.70.55
10
15
0.14
20
0.12
0.1
0.75
ORDERING INFORMATION
Device Package Shipping
NTA7002NT1G SC75
(PbFree)
3000 / Tape & Reel
NVTA7002NT1G SC75
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
0N Semiwndudw" 1 an BSC a m age SIVLE‘ STVLE 2 STVLE 3 mm EASE 2w: ANODE 2an ANODE B E 2 EM‘TTER 2 NJC 2 ANODE 3 couscmn 3 CATHODE a CATHODE SIVLEA mm CATHODE 2 CATHODE 3 ANODE (n3; ON Samaanuuamn and are Mademavks av Semxcanduclur Cnmpunenls lndusmes LLC dba ON Semxcanduclar ar us suhsxdxanes m xna Umled sxaxaa andJm mhev commas ON Semxcunduclar vesewes ma th| to make changes wuhum Yunhev nauaa to any pruduns nanan ON Semanduc‘nv makes m7 wanamy represenlalmn m guarantee regardmg ma sumahmy at w; manuals can any pamcu‘av purpase nnv dues ON Semumnduclm assume any Mammy ansmg mac xna apphcahan m use no any pmduclnv mum and saaamcauy dwsc‘axms any and au Mammy mcmdmg wnnam nnmauan spema‘ cansequenha‘ m \nmdenla‘ damages ON Sannmnauaxar dues nn| aanyay any hcense under na pa|em nghls nar xna ngma av n|hers
SC75/SOT416
CASE 46301
ISSUE G
DATE 07 AUG 2015
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
E
D
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
3
2
1
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
XX M
G
XX = Specific Device Code
M = Date Code
G= PbFree Package
1
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.061 0.063 0.065
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.060 0.063 0.067
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
12
3
1.803
0.071
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SC75/SOT416
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