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MMBT/SMMBTA06W Datasheet by ON Semiconductor

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0N Semiconductor® www.0nsem i .com
© Semiconductor Components Industries, LLC, 2012
September, 2018 − Rev. 5 1Publication Order Number:
MMBTA06WT1/D
MMBTA06W, SMMBTA06W,
Driver Transistor
NPN Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating:
Human Body Model − 4 kV
Machine Model − 400 V
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 80 Vdc
CollectorBase Voltage VCBO 80 Vdc
EmitterBase Voltage VEBO 4.0 Vdc
Collector Current − Continuous IC500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
TA = 25°C
PD460
mW
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA 272
°C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
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MMBTA06WT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
GM MG
G
GM = Specific Device Code
M = Date Code
G= Pb−Free Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
SMMBTA06WT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
SMMBTA06WT3G SC−70
(Pb−Free)
10,000 /
Tape & Reel
mm OUTPUT Figure 1. Switching Time Tesl Circuits www.cmsemi .com 2 |__%__
MMBTA06W, SMMBTA06W,
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 80 −
Vdc
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO 4.0 −
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICES − 0.1
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO − 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE 100
100
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat) − 0.25
Vdc
BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on) − 1.2
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (Note 2)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
fT100 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN-ON TIME
-1.0 V VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME
+VBB VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
MH; 1,, : 25>c —-— CURRENT UMIT ——— THERMAL UMIT \ SECOND BREAKDOWN UMIT
MMBTA06W, SMMBTA06W,
www.onsemi.com
3
Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance
Figure 4. Switching Time
100 2002.0
IC, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
10 1000.1
VR, REVERSE VOLTAGE (VOLTS)
80
60
40
20
10
8.0
20
VCE = 2.0 V
TJ = 25°C
TJ = 25°C
3.0 5.0 7.0 10 20 30 50 70
fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MH
z
501.0 2.0 5.00.2 0.5
6.0
4.0
Cibo
Cobo
2010
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10 100
t, TIME (ns)
50 200 500
1.0 k
500
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
tr
5.0 7.0
30
70
300
700
30 70
td @ VBE(off) = 0.5 V
C, CAPACITANCE (pF)
300
Figure 5. Active−Region Safe Operating Area
101.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
200
100
50
20
10
30
IC, COLLECTOR CURRENT (mA)
2.0 5.0 50
1.0 k
1.0 ms
1.0 s
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10070203.0 7.0
100 ms
TC = 25°C
700
300
30
70
Figure 6. DC Current Gain
2.0 5000.5
IC, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
10
, DC CURRENT GAIN
TJ = 125°C
1.0 3.0 5.0
VCE = 1.0 V
20 10030 50 200 300
hFE
25°C
-55°C
Figure 7. “ON” Voltages
10 5001.0
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
100
TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
0.5 2.0 5.0 20020 50
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MMBTA06W, SMMBTA06W,
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4
Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature
Coefficient
100 5000.5
IC, COLLECTOR CURRENT (mA)
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
0.1 100.05
IB, BASE CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
1.0
TJ = 25°C
RVB , TEMPERATURE COEFFICIENT (mV/ C)
10
RqVB for VBE
q°
50
IC =
100 mA
IC =
50 mA
IC =
250 mA
IC =
500 mA
IC =
10 mA
, COLLECTOR-EMITTER VOLTAGE (VOLTS)VCE
1.0 2.0 5.0 20 50 200202.0 5.00.2 0.5
*Tj TV T
MMBTA06W, SMMBTA06W,
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5
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
MMBTA06WT1/D
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