MCR12DCM, N Datasheet by onsemi

0N Semiconductorg E: I: E:
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5 1Publication Order Number:
MCR12DCM/D
MCR12DCM, MCR12DCN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
•Small Size
•Passivated Die for Reliability and Uniformity
•Low Level Triggering and Holding Characteristics
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
•Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open) MCR12DCM
MCR12DCN
VDRM,
VRRM 600
800
V
On−State RMS Current
(180° Conduction Angles; TC = 90°C) IT(RMS) 12 A
Average On−State Current
(180° Conduction Angles; TC = 90°C) IT(AV) 7.8 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A
Circuit Fusing Consideration (t = 8.3 msec) I2t 41 A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 sec, TC = 90°C) PGM 5.0 W
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C) PG(AV) 0.5 W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 sec, TC = 90°C) IGM 2.0 A
Operating Junction Temperature Range TJ−40 to 125 °C
Storage Temperature Range Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM for all types can be applied on a continuous basis. Ratings apply for zero
or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested
with a constant current source such that the voltage ratings of the device are
exceeded.
SCRs
12 AMPERES RMS
600 − 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4Anode
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DPAK
CASE 369C
STYLE 4
MARKING DIAGRAM
Y = Year
WW = Work Week
R12DCx = Device Code
x= M or N
G = Pb−Free Package
123
4
YWW
R1
2DCxG
MCR12DCM, MCR12DCN
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
RJC
RJA
RJA
2.2
88
80
°C/W
Maximum Lead Temperature for Soldering Purposes (Note 3) TL260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM,
IRRM −
−
−
−
0.01
5.0
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 4) (ITM = 20 A) VTM − 1.3 1.9 V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 )T
J = 25°C
TJ = *40°C
IGT 2.0
−
7.0
−
20
40
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 )T
J = 25°C
TJ = *40°C
VGT 0.5
−
0.65
−
1.0
2.0
V
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 )T
J = 125°C
VGD 0.2 − − V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C
TJ = −40°C
IH4.0
−
22
−
40
80
mA
Latching Current
(VD = 12 V, IG = 20 mA, TJ = 25°C)
(VD = 12 V, IG = 40 mA, TJ = −40°C)
IL4.0
−
22
−
40
80
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
50 200 − V/s
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
ORDERING INFORMATION
Device Package Shipping†
MCR12DCMT4 DPAK 2500 / Tape and Reel
MCR12DCMT4G DPAK
(Pb−Free) 2500 / Tape and Reel
MCR12DCNT4 DPAK 2500 / Tape and Reel
MCR12DCNT4G DPAK
(Pb−Free) 2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
90‘ 120° 60‘ dc dc / TVFICAL @ TJ : 25‘6 IuK
MCR12DCM, MCR12DCN
http://onsemi.com
3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off−State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off−State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On−State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
90°
60°
Figure 1. Average Current Derating Figure 2. On−State Power Dissipation
8.00
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
125
120
115
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
3.0 8.00
8.0
4.0
2.0
0
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
P
110
85
1.0 2.0 3.0 1.0 2.0
6.0
16
°
, AVERAGE POWER DISSIPATION (WATTS)
(AV)
dc
180°120°
90°
= 30°
dc
180°
120°
= 30°
5.0
4.0 5.0
105
4.0
= Conduction
Angle
= Conduction
Angle
100
95
90
6.0 7.0
10
12
14
6.0 7.0
60°
Figure 3. On−State Characteristics Figure 4. Transient Thermal Response
5.00
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.00.1
1.0
0.1
0.01
4.0
I
r(t), TRANSIENT RESISTANCE
1.0 3.0 10 100 1000 10
K
, INSTANTANEOUS ON−STATE CURRENT (AMPS)
T
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 125°C
ZJC(t) = RJC(t)Sr(t)
2.0
(NORMALIZED)
MCR12DCM, MCR12DCN
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4
Figure 5. Typical Gate Trigger Current versus
Junction Temperature Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
−25 20−40
TJ, JUNCTION TEMPERATURE (°C)
100
10
TJ, JUNCTION TEMPERATURE (°C)
−25 65−40
0.2
205.0
, GATE TRIGGER CURRENT (mA)IGT
50 11065 5.0 12535 50
VGT, GATE TRIGGER VOLTAGE (VOLTS)
80
1.0
0.9
−10 35 95 −10 9580125
0.3
0.4
0.5
0.6
0.7
0.8
110
Figure 7. Typical Holding Current versus
Junction Temperature Figure 8. Typical Latching Current versus
Junction Temperature
Figure 9. Exponential Static dv/dt versus
Gate−Cathode Resistance
65 125−40
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
1000 10 K10
RGK, GATE−CATHODE RESISTANCE (OHMS)
1000
100
IH, HOLDING CURRENT (mA)
I
10
1.0
−25 5.0 20 50 95
, LATCHING CURRENT (mA)
L
100
VD = 800 V
TJ = 125°C
−10 35 80 110 65 125−40
10
1.0
−25 5.0 20 50 95
100
−10 35 80 110
STATIC dv/dt (V/ s)
100
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MCR12DCM, MCR12DCN
http://onsemi.com
5
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T− SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244 3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
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MCR12DCM/D
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