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MMBTA05L,06L

ON Semiconductor

Download PDF Datasheet

Datasheet

© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 10 1Publication Order Number:
MMBTA05LT1/D
MMBTA05L, MMBTA06L
Driver Transistors
NPN Silicon
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage
MMBTA05L
MMBTA06L
VCEO 60
80
Vdc
CollectorBase Voltage MMBTA05L
MMBTA06L
VCBO 60
80
Vdc
EmitterBase Voltage VEBO 4.0 Vdc
Collector Current − Continuous IC500 mAdc
Electrostatic Discharge ESD HBM Class 3B
MM Class C
CDM Class IV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5
Board (Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23
CASE 318
STYLE 6
2
3
1
MARKING DIAGRAMS
1H M G
G
MMBTA05LT1
COLLECTOR
3
1
BASE
2
EMITTER
1GM M G
G
MMBTA06LT1,
SMMBTA06L
1H, 1GM = Specific Device Code
M = Date Code*
G= Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
www.onsemi.com
MMBTA05L, MMBTA06L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0) MMBTA05L
MMBTA06L
V(BR)CEO 60
80
Vdc
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0) V(BR)EBO 4.0 − Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) ICES 0.1 mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) MMBTA05L
(VCB = 80 Vdc, IE = 0) MMBTA06L
ICBO
0.1
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE 100
100
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc) VCE(sat) 0.25 Vdc
BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) 1.2 Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (Note 4)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz) fT100 − MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN-ON TIME
-1.0 V VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME
+VBB VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
MMBTA05L, MMBTA06L
www.onsemi.com
3
Figure 2. Current Gain Bandwidth Product vs.
Collector Current Figure 3. Capacitance
Figure 4. Switching Time
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)
VCE = 2.0 V
TA = 25°C
TA = 25°C
Cibo
Cobo
2010
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10 100
t, TIME (ns)
50 200 500
1.0 k
500
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
tr
5.0 7.0
30
70
300
700
30 70
td @ VBE(off) = 0.5 V
C, CAPACITANCE (pF)
300
Figure 5. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (mA)
TA = 150°CVCE = 1.0 V
ftau, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
1000
100
101 10 100 1000 0.1 1 10 100
100
10
1
TA = 25°C
TA = −55°C
hfe, DC CURRENT GAIN
0.1 1 10 100
1000
1000
100
10
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
0.01
0.1
1
10.1
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.5
0.9
IC/IB = 10
TA = 150°C
TA = 25°C
TA = −55°C
1.2
10 100 1000
TA = 150°C
TA = 25°C
TA = −55°C
10.1 10 100 1000
MMBTA05L, MMBTA06L
www.onsemi.com
4
Figure 8. Base Emitter Turn−ON Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
1.1
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 1 V
Figure 9. Saturation Region
IB, BASE CURRENT (mA)
TA = 25°C
IC =
100 mA
IC =
50 mA IC =
250 mA IC =
500 mA
IC =
10 mA
Figure 10. Base−Emitter Temperature
Coefficient
100 5000.5
IC, COLLECTOR CURRENT (mA)
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8 10
RqVB for VBE
1.0 2.0 5.0 20 50 200
Figure 11. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
10000
IC, COLLECTOR CURRENT (mA)
Thermal Limit
100 ms
1 s
10 ms
1 ms
TA = 150°C
TA = 25°C
TA = −55°C
10.1 10 100 1000
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 10.1 10 1000.01
1.0
0.8
0.6
0.4
0.2
0
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
RqVB, TEMPERATURE COEFFICIENT (mV/°C)
Single Pulse at TA = 25°C
MMBTA06L
Figure 12. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
10000
IC, COLLECTOR CURRENT (mA)
1000
100
10
1
1000
100
10
1
Thermal Limit
100 ms
1 s
10 ms
1 ms
Single Pulse at TA = 25°C
MMBTA05L
MMBTA05L, MMBTA06L
www.onsemi.com
5
ORDERING INFORMATION
Device Package Shipping
MMBTA05LT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
NSVMMBTA05LT1G* SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBTA05LT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
MMBTA06LT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
SMMBTA06LT1G* SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBTA06LT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
SMMBTA06LT3G* SOT−23
(Pb−Free) 10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
MMBTA05L, MMBTA06L
www.onsemi.com
6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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P
UBLICATION ORDERING INFORMATION
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
MMBTA05LT1/D
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