MMBT4403L, SMMBT4403L Datasheet

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Datasheet

© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 13 1Publication Order Number:
MMBT4403LT1/D
MMBT4403L, SMMBT4403L
Switching Transistor
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO −40 Vdc
CollectorBase Voltage VCBO −40 Vdc
EmitterBase Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
Collector Current − Peak ICM −900 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping
ORDERING INFORMATION
MMBT4403LT1G SOT−23
(Pb−Free) 3000 / Tape & Ree
l
MMBT4403LT3G SOT−23
(Pb−Free) 10,000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
2T M G
G
2T = Specific Device Code*
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
SMMBT4403LT1G SOT−23
(Pb−Free) 3000 / Tape & Ree
l
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MMBT4403L, SMMBT4403L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 − Vdc
CollectorBase Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −40 − Vdc
EmitterBase Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc
Base Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) IBEV −0.1 mAdc
Collector Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) ICEX −0.1 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(Note 3) (IC = −150 mAdc, VCE = −2.0 Vdc)
(Note 3) (IC = −500 mAdc, VCE = −2.0 Vdc)
hFE 30
60
100
100
20
300
CollectorEmitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
−0.4
−0.75
Vdc
BaseEmitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat) −0.75
−0.95
−1.3
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) fT200 − MHz
Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccb 8.5 pF
Emitter−Base Capacitance (VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 30 pF
Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 1.5 15 kW
Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4
SmallSignal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 60 500
Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 1.0 100 mMhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = −30 Vdc, VEB = −2.0 Vdc,
IC = −150 mAdc, IB1 = −15 mAdc)
td 15 ns
Rise Time tr− 20
Storage Time (VCC = −30 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
ts 225 ns
Fall Time tf− 30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
-16 V 10 to 100 ms,
DUTY CYCLE = 2%
0
1.0 kW
-30 V
200 W
CS* < 10 pF 1.0 kW
-30 V
200 W
CS* < 10
p
+4.0 V
< 2 ns
1.0 to 100 ms,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
-16 V
MMBT4403L, SMMBT4403L
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3
Figure 3. Charge Data
IC, COLLECTOR CURRENT (mA)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1 300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 4. Turn−On Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 5. Rise Time
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
QT
QA
25°C 100°C
TRANSIENT CHARACTERISTICS
0.3
0.2
30
ts, STORAGE TIME (ns)
t, TIME (ns)
70
100
10 20 50 70 100 200 300 500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
VCC = 30 V
IC/IB = 10
10 20 50 70 100 200 300 500
30
100
20
70
50
200
30
tr, RISE TIME (ns)
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts = ts - 1/8 tf
6
8
10
0
4
2
0.1 2.0 5.0 10 20 50
1.00.50.20.01 0.02 0.05 100
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 430 W
IC = 500 mA, RS = 560 W
IC = 50 mA, RS = 2.7 kW
IC = 100 mA, RS = 1.6 kW
RS = OPTIMUM SOURCE RESISTANCE
50 100 200 500 1k 2k 5k 10k 20k 50k
6
8
10
0
4
2
NF, NOISE FIGURE (dB)
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1 kHz
IC = 50 mA
100 mA
500 mA
1.0 mA
MMBT4403L, SMMBT4403L
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4
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
hie, INPUT IMPEDANCE (OHMS)
Figure 9. Input Impedance
IC, COLLECTOR CURRENT (mAdc)
100k
100
20k
10k
5k
2k
1k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
Figure 10. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mAdc)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.1
20
Figure 11. Output Admittance
IC, COLLECTOR CURRENT (mAdc)
500
1.0
5.0 7.0
50
20
10
5.0
2.0
5.0
2.0
1.0
0.5
0.2
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
-4
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
50k
500
200
10
100
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403L, SMMBT4403L
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5
STATIC CHARACTERISTICS
IC, COLLECTOR CURRENT (A)
250
300
350
450
100
h , DC CURRENT GAIN
0.01 1
50
0.1
FE
0.001
0.0001
150
200
400
-55°C
TJ = 150°C
25°C
Figure 12. DC Current Gain
Ib, BASE CURRENT (mA)
Figure 13. Collector Saturation Region
0.2
0.4
0.6
0.8
1.2
0.001
0
10 100
1.0
Figure 14. Collector−Emitter Saturation
Voltage vs. Collector Current Figure 15. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
0.5
0
0.5
1.0
1.5
2.0
qVC for VCE(sat)
qVS for VBE
COEFFICIENT (mV/ C)°
2.5 1.0 2.0 5.0 10 20 50 100 500
200
0.1 0.2 0.5
0.01 0.1 1
IC = 1.0 mA 10 mA 100 mA 500 mA
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
IC, COLLECTOR CURRENT (A)
0.15
0.20
0.30
0.35
0.05
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.01 0.1
0
1
150°C
0.0001
-55°C
0.001
25°C
0.10
0.25
IC/IB = 10
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
MMBT4403L, SMMBT4403L
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6
STATIC CHARACTERISTICS
Figure 16. Base−Emitter Saturation Voltage vs.
Collector Current Figure 17. Base−Emitter Turn On Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
1.1
1
0.10.010.0010.0001
0.2
0.4
0.5
0.6
0.7
0.9
1.0
V
BE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
VBE(on), BASE−EMITTER TURN ON
VOLTAGE (V)
0.8
150°C
25°C
−55°C
0.8
150°C
25°C
−55°C
IC/IB = 10 VCE = 2.0 V
Figure 18. Input Capacitance vs. Emitter Base
Voltage Figure 19. Output Capacitance vs. Collector
Base Voltage
Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
63210
10
15
20
25
35
40
4
0
201550
3
7
9
13
15
C
ibo
, INPUT CAPACITANCE (pF)
Cobo, OUTPUT CAPACITANCE (pF)
30
4 5 10 25 30 35
0.3
11
5
Figure 20. Safe Operating Area Figure 21. Current−Gain−Bandwidth Product
VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
100100.1
1
10
1000
100.1
10
1000
I
C
, COLLECTOR CURRENT (mA)
fT, CURRENT−GAIN−BANDWIDTH (MHz)
100
100
1 100 100
0
10 ms
1 s VCE = 1.0 V
TA = 25°C
1 ms 100 ms
Thermal Limit
1
MMBT4403L, SMMBT4403L
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7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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