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MMBT,SMMBT3906L Datasheet

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Datasheet

© Semiconductor Components Industries, LLC, 1994
August, 2017 − Rev. 13 1Publication Order Number:
MMBT3906LT1/D
MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO −40 Vdc
CollectorBase Voltage VCBO −40 Vdc
EmitterBase Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−200 mAdc
Collector Current − Peak (Note 3) ICM −800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @ TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
Device Package Shipping
ORDERING INFORMATION
MMBT3906LT1G SOT−23
(Pb−Free) 3,000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT3906LT3G SOT−23
(Pb−Free) 10,000 / Tape &
Reel
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2A M G
G
2A = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
SMMBT3906LT1G SOT−23
(Pb−Free) 3,000 / Tape &
Reel
SMMBT3906LT3G SOT−23
(Pb−Free) 10,000 / Tape &
Reel
www.onsemi.com
MMBT3906L, SMMBT3906L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 Vdc
CollectorBase Breakdown Voltage
(IC = −10 mAdc, IE = 0) V(BR)CBO −40 Vdc
EmitterBase Breakdown Voltage
(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 Vdc
Base Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc) IBL −50 nAdc
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc) ICEX −50 nAdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
HFE 60
80
100
60
30
300
CollectorEmitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
−0.25
−0.4
Vdc
BaseEmitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat) −0.65
−0.85
−0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) fT250 MHz
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 4.5 pF
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 10 pF
Input Impedance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 2.0 12 kW
Voltage Feedback Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10−4
SmallSignal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 100 400
Output Admittance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 3.0 60 mmhos
Noise Figure
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc,
IC = −10 mAdc, IB1 = −1.0 mAdc)
td 35 ns
Rise Time tr− 35
Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc,
IB1 = IB2 = −1.0 mAdc)
ts 225 ns
Fall Time tf− 75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBT3906L, SMMBT3906L
www.onsemi.com
3
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916 CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+0.5 V
10.6 V 300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
Figure 6. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
t , FALL TIME (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
MMBT3906L, SMMBT3906L
www.onsemi.com
4
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 7.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 8.
Rg, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 9. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
-4
70
30
0.7 7.0
0.7 7.0
7.0
3.0
0.7
0.3
0.7 7.0
0.7 7.0
MMBT3906L, SMMBT3906L
www.onsemi.com
5
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1000
10
1.0
TJ = 150°C
25°C
-55°C
hFE, DC CURRENT GAIN
10 100 1000
VCE = 1 V
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3906L, SMMBT3906L
www.onsemi.com
6
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
0.05
0.10
0.15
0.25
0.35
0.40
0.50
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 17. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
0.30
IC/IB = 10 150°C25°C
55°C
IC/IB = 10
150°C
25°C
−55°C
VCE = 1 V
150°C
25°C
−55°C
0.20
0.45
Figure 18. Current Gain Bandwidth vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
10001001010.1
10
100
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 2 V
TA = 25°C
VCE (Vdc)
1001010.10.01
0.001
0.01
0.1
1
IC (A)
Single Pulse Test
@ TA = 25°C
Thermal Limit
100 ms
1 s 10 ms
1 ms
IC, COLLECTOR CURRENT (mA)
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
q
Figure 19. Temperature Coefficients Figure 20. Safe Operating Area
MMBT3906L, SMMBT3906L
www.onsemi.com
7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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