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1N53xx(B, G) Series

ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
November, 2013 Rev. 15
1Publication Order Number:
1N5333B/D
1N53 Series
5 Watt Surmetict
40 Zener Voltage Regulators
This is a complete series of 5 Watt Zener diodes with tight limits and
better operating characteristics that reflect the superior capabilities of
siliconoxide passivated junctions. All this in an axial lead,
transfermolded plastic package that offers protection in all common
environmental conditions.
Features
Zener Voltage Range 3.3 V to 200 V
ESD Rating of Class 3 (>16 kV) per Human Body Model
Surge Rating of up to 180 W @ 8.3 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
PbFree Packages are Available*
Mechanical Characteristics
CASE: Void free, transfermolded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16 in. from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Symbol Value Unit
Max. Steady State Power Dissipation
@ TL = 25°C, Lead Length = 3/8 in
Derate above 25°C
JunctiontoLead Thermal Resistance
PD
qJL
5
40
25
W
mW/°C
°C/W
Operating and Storage
Temperature Range
TJ, Tstg 65 to +200
(Note 1)
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Max operating temperature for DC conditions is 150°C, but not to exceed
200°C for pulsed conditions with low duty cycle or nonrepetitive.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
AXIAL LEAD
CASE 017AA
PLASTIC
Cathode Anode
MARKING DIAGRAM
A = Assembly Location
1N53xxB = Device Number
(Refer to Tables on Pages 3 & 4)
YY = Year
WW = Work Week
G=PbFree Package
A
1N
53xxB
YYWWG
G
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1N53xxB, G Axial Lead
(PbFree)
1000 Units/Box
1N53xxBRL, G Axial Lead
(PbFree)
4000/Tape & Reel
(Note: Microdot may be in either location)
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
1N53 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRBreakdown Voltage
IFForward Current
VFForward Voltage @ IF
IRMaximum Surge Current @ TA = 25°C
DVZReverse Zener Voltage Change
IZM Maximum DC Zener Current
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Device
(Note 2)
Device
Marking
Zener Voltage (Note 3) Zener Impedance (Note 3)
Leakage
Current IR
(Note 4)
DVZ
(Note 5)
IZM
(Note 6)
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR
Min Nom Max mA W W mA mA Max Volts A Volts mA
1N5333B 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440
1N5334B 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320
1N5335B 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220
1N5336B 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100
1N5337B 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010
1N5338B 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930
1N5339B 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865
1N5340B 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790
1N5341B 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765
1N5342B 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700
1N5343B 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630
1N5344B 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580
1N5345B 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545
1N5346B 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520
1N5347B 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
2. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.
3. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied
40 ±10 ms prior to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode
(TA = 25°C +8°C, 2°C).
4. SURGE CURRENT (IR): Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width,
PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between
1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in
Figure 6. Mounting contact located as specified in Note 2 (TA = 25°C +8°C, 2°C).
5. VOLTAGE REGULATION (DVZ): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%
of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting
contact located as specified in Note 2 (TA = 25°C +8°C, 2°C).
6. MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the Bsuffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device.
TL = 25°C at 3/8 maximum from the device body.
The “G’’ suffix indicates PbFree package or PbFree packages are available.
1N53 Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Device
(Note 7)
Device
Marking
Zener Voltage (Note 8) Zener Impedance (Note 8)
Leakage
Current IR
(Note 9)
DVZ
(Note
10)
IZM
(Note 11)
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR
Min Nom Max mA W W mA mA Max Volts A Volts mA
1N5348B 1N5348B 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430
1N5349B 1N5349B 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395
1N5350B 1N5350B 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365
1N5351B 1N5351B 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340
1N5352B 1N5352B 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315
1N5353B 1N5353B 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295
1N5354B 1N5354B 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280
1N5355B 1N5355B 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264
1N5356B 1N5356B 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250
1N5357B 1N5357B 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237
1N5358B 1N5358B 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216
1N5359B 1N5359B 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198
1N5360B 1N5360B 23.75 25 26.25 50 4 110 1 0.5 19 4.3 0.55 190
1N5361B 1N5361B 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176
1N5362B 1N5362B 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170
1N5363B 1N5363B 28.5 30 31.5 40 8 140 1 0.5 22.8 3.7 0.6 158
1N5364B 1N5364B 31.35 33 34.65 40 10 150 1 0.5 25.1 3.5 0.6 144
1N5365B 1N5365B 34.2 36 37.8 30 11 160 1 0.5 27.4 3.5 0.65 132
1N5366B 1N5366B 37.05 39 40.95 30 14 170 1 0.5 29.7 3.1 0.65 122
1N5367B 1N5367B 40.85 43 45.15 30 20 190 1 0.5 32.7 2.8 0.7 110
1N5368B 1N5368B 44.65 47 49.35 25 25 210 1 0.5 35.8 2.7 0.8 100
1N5369B 1N5369B 48.45 51 53.55 25 27 230 1 0.5 38.8 2.5 0.9 93
1N5370B 1N5370B 53.2 56 58.8 20 35 280 1 0.5 42.6 2.3 1.0 86
1N5371B 1N5371B 57 60 63 20 40 350 1 0.5 45.5 2.2 1.2 79
1N5372B 1N5372B 58.9 62 65.1 20 42 400 1 0.5 47.1 2.1 1.35 76
1N5373B 1N5373B 64.6 68 71.4 20 44 500 1 0.5 51.7 2.0 1.52 70
1N5374B 1N5374B 71.25 75 78.75 20 45 620 1 0.5 56 1.9 1.6 63
1N5375B 1N5375B 77.9 82 86.1 15 65 720 1 0.5 62.2 1.8 1.8 58
1N5377B 1N5377B 86.45 91 95.55 15 75 760 1 0.5 69.2 1.6 2.2 52.5
1N5378B 1N5378B 95 100 105 12 90 800 1 0.5 76 1.5 2.5 47.5
1N5380B 1N5380B 114 120 126 10 170 1150 1 0.5 91.2 1.3 2.5 39.5
1N5381B 1N5381B 123.5 130 136.5 10 190 1250 1 0.5 98.8 1.2 2.5 36.6
1N5383B 1N5383B 142.5 150 157.5 8 330 1500 1 0.5 114 1.1 3.0 31.6
1N5384B 1N5384B 152 160 168 8 350 1650 1 0.5 122 1.1 3.0 29.4
1N5386B 1N5386B 171 180 189 5 430 1750 1 0.5 137 1.0 4.0 26.4
1N5387B 1N5387B 180.5 190 199.5 5 450 1850 1 0.5 144 0.9 5.0 25
1N5388B 1N5388B 190 200 210 5 480 1850 1 0.5 152 0.9 5.0 23.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
7. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.
8. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied
40 ±10 ms prior to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode
(TA = 25°C +8°C, 2°C).
9. SURGE CURRENT (IR): Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width,
PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between
1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in
Figure 6. Mounting contact located as specified in Note 7 (TA = 25°C +8°C, 2°C).
10.VOLTAGE REGULATION (DVZ): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%
of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting
contact located as specified in Note 7 (TA = 25°C +8°C, 2°C).
11. MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the Bsuffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device.
TL = 25°C at 3/8 maximum from the device body.
The “G’’ suffix indicates PbFree package or PbFree packages are available.
1N53 Series
http://onsemi.com
4
Figure 1. Typical Thermal Resistance
40
30
20
10
00 0.2 0.4 0.6 0.8 1
EQUAL CONDUCTION
THROUGH EACH LEAD
L L
L, LEAD LENGTH TO HEATSINK (INCH)
JL
, JUNCTION‐TO‐LEAD THERMAL RESISTANCE (
θ°C/W)
TEMPERATURE COEFFICIENTS
Figure 2. Temperature Coefficient-Range for Units 3 to 10 Volts
Figure 3. Temperature Coefficient-Range for Units 10 to 220 Volts
VZ, ZENER VOLTAGE @ IZT (VOLTS)
10
8
6
4
2
0
-2
34 5678910
RANGE
300
200
100
50
30
20
10
5
0 20 40 60 80 100 120 140 160 180 200 220
VZ, ZENER VOLTAGE @ IZT (VOLTS)
θVZ, TEMPERATURE COEFFICIENT
(mV/°C) @ I ZT
θVZ, TEMPERATURE COEFFICIENT
(mV/°C) @ I ZT
RANGE
1N53 Series
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5
0.5
Figure 4. Typical Thermal Response
L, Lead Length = 3/8 Inch
Figure 5. Maximum Non-Repetitive Surge Current
versus Nominal Zener Voltage
(See Note 4)
θJL (t, D), TRANSIENT THERMAL RESISTANCE
JUNCTION‐TO‐LEAD (°C/W)
0.01
0.0000001
DUTY CYCLE, D = t1/t2
SINGLE PULSE D TJL = qJL(t)PPK
REPETITIVE PULSES D TJL = qJL(t,D)PPK
qJL(t,D) = D * qJL ()+(1D) * qJL(t)
[where qJL(t) is D = 0 curve]
PPK t1
t2
t, TIME (SECONDS)
Ir, PEAK SURGE CURRENT (AMPS)
40
20
10
4
2
1
0.1
0.2
0.4
34 6810 20 30 40 60 80 100 200
*SQUARE WAVE PW=100ms*
PW=1000ms*
PW=1ms*
PW=8.3ms*
NOMINAL VZ (V)
30
20
10
0.1
0.2
0.5
1
2
5
1 10 100 1000
1000
100
10
1
0.1
1 234 5678 910
IZ, ZENER CURRENT (mA)
PW, PULSE WIDTH (ms)
VZ, ZENER VOLTAGE (VOLTS)
Figure 6. Peak Surge Current versus Pulse Width
(See Note 4)
Figure 7. Zener Voltage versus Zener Current
VZ= 3.3 thru 10 Volts
VZ=200V
VZ=3.3V
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 5
TC=25°C
T=25°C
Ir, PEAK SURGE CURRENT (AMPS)
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (VOLTS)
1000
100
10
1
0.1
10 20 30 40 50 60 70 80
T=25°C
Figure 8. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
0.1
1
10
100
D = 0
0.2
0.1
0.05
0.02
0.01
1N53 Series
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6
100
10
1
0.1
80 100 120 140 160 180 200 220
VZ, ZENER VOLTAGE (VOLTS)
IZ, ZENER CURRENT (mA)
Figure 9. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
qLA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + DTJL
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DTJL = qJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the Zener voltage temperature coefficient, is found
from Figures 2 and 3.
Under high power-pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
1N53 Series
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7
PACKAGE DIMENSIONS
SURMETIC 40, AXIAL LEAD
CASE 017AA
ISSUE O
B
D
F
K
A
F
K
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.330 0.350 8.38 8.89
B0.130 0.145 3.30 3.68
D0.037 0.043 0.94 1.09
F--- 0.050 --- 1.27
K1.000 1.250 25.40 31.75
NOTES:
1. CONTROLLING DIMENSION: INCH
2. LEAD DIAMETER AND FINISH NOT CONTROLLED
WITHIN DIMENSION F.
3. CATHODE BAND INDICATES POLARITY
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
1N5333B/D
SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).
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