PDZ2.4B - PDZ36B Datasheet

Nexperia USA Inc.

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DATA SHEET
Product data sheet
Supersedes data of 2002 Feb 18
2004 Mar 22
DISCRETE SEMICONDUCTORS
PDZ-B series
Voltage regulator diodes
2004 Mar 22 2
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
FEATURES
Total power dissipation: max. 400 mW
Small plastic package suitable for surface mounted
design
Wide variety of voltage ranges: nominal 2.4 to 36 V
(E24 range)
Tolerance approximately ±2%.
APPLICATIONS
General voltage regulation.
DESCRIPTION
Low-power general purpose voltage regulator diodes in a
small plastic SMD SOD323 (SC-76) package.
PINNING
PIN DESCRIPTION
1cathode
2anode
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
handbook, halfpage
12
Top view
MAM387
The marking bar indicates the cathode.
MARKING
ORDERING INFORMATION
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ
PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR
PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS
PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT
PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU
PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM
PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN
PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PDZ2.4B to
PDZ36B plastic surface mounted package; 2 leads SOD323
2004 Mar 22 3
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IFcontinuous forward current 200 mA
IZSM non-repetitive peak reverse current tp = 100 μs; square wave;
Tamb = 25 °C prior to surge see Table 2
Ptot total power dissipation Tamb = 25 °C; note 1;
see Fig.2 400 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-s) thermal resistance from junction to soldering point 130 K/W
Rth(j-a) thermal resistance from junction to ambient note 1 340 K/W
2004 Mar 22 4
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
CHARACTERISTICS
Table 1 Total series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF = 10 mA; see Fig.3 0.9 V
IF = 100 mA; see Fig.3 1.1 V
IRreverse current
PDZ2.4B VR = 1 V 50 μA
PDZ2.7B VR = 1 V 20 μA
PDZ3.0B VR = 1 V 10 μA
PDZ3.3B VR = 1 V 5 μA
PDZ3.6B VR = 1 V 5 μA
PDZ3.9B VR = 1 V 3 μA
PDZ4.3B VR = 1 V 3 μA
PDZ4.7B VR = 1 V 2 μA
PDZ5.1B VR = 1.5 V 2 μA
PDZ5.6B VR = 2.5 V 1 μA
PDZ6.2B VR = 3 V 500 nA
PDZ6.8B VR = 3.5 V 500 nA
PDZ7.5B VR = 4 V 500 nA
PDZ8.2B VR = 5 V 500 nA
PDZ9.1B VR = 6 V 500 nA
PDZ10B VR = 7 V 100 nA
PDZ11B VR = 8 V 100 nA
PDZ12B VR = 9 V 100 nA
PDZ13B VR = 10 V 100 nA
PDZ15B VR = 11 V 50 nA
PDZ16B VR = 12 V 50 nA
PDZ18B VR = 13 V 50 nA
PDZ20B VR = 15 V 50 nA
PDZ22B VR = 17 V 50 nA
PDZ24B VR = 19 V 50 nA
PDZ27B VR = 21 V 50 nA
PDZ30B VR = 23 V 50 nA
PDZ33B VR = 25 V 50 nA
PDZ36B VR = 27 V 50 nA
2004 Mar 22 5
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
Table 2 Per type
Tj = 25 °C unless otherwise specified.
TYPE
NUMBER
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZ = 5 mA
(see Figs 4 and 5)
DIODE CAP.
Cd (pF) at
f = 1 MHz;
VR = 0
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
MIN. MAX. MAX. at IZ
(mA) MAX. at IZ
(mA) TYP. MAX. MAX.
PDZ2.4B 2.43 2.63 1 000 0.5 100 51.6 450 8.0
PDZ2.7B 2.69 2.91 1 000 0.5 100 52.0 440 8.0
PDZ3.0B 2.85 3.07 1 000 0.5 95 52.1 425 8.0
PDZ3.3B 3.32 3.53 1 000 0.5 95 52.4 410 8.0
PDZ3.6B 3.60 3.85 500 1.0 90 52.4 390 8.0
PDZ3.9B 3.89 4.16 500 1.0 90 52.5 370 8.0
PDZ4.3B 4.17 4.48 600 1.0 90 52.5 350 8.0
PDZ4.7B 4.55 4.75 600 1.0 90 51.4 325 8.0
PDZ5.1B 4.96 5.20 250 0.5 60 50.3 300 5.5
PDZ5.6B 5.48 5.73 100 0.5 50 51.9 275 5.5
PDZ6.2B 6.06 6.33 80 0.5 50 52.7 250 5.5
PDZ6.8B 6.65 6.93 60 0.5 40 53.4 215 5.5
PDZ7.5B 7.28 7.60 60 0.5 10 54.0 170 3.5
PDZ8.2B 8.02 8.36 60 0.5 10 54.6 150 3.5
PDZ9.1B 8.85 9.23 60 0.5 10 55.5 120 3.5
PDZ10B 9.77 10.21 60 0.5 10 56.4 110 3.5
PDZ11B 10.78 11.22 60 0.5 10 57.4 108 3.0
PDZ12B 11.74 12.24 80 0.5 10 58.4 105 3.0
PDZ13B 12.91 13.49 80 0.5 10 59.4 103 2.5
PDZ15B 14.34 14.98 80 0.5 15 511.4 99 2.0
PDZ16B 15.85 16.51 80 0.5 20 512.4 97 1.5
PDZ18B 17.56 18.35 80 0.5 20 514.4 93 1.5
PDZ20B 19.52 20.39 100 0.5 20 516.4 88 1.5
PDZ22B 21.54 22.47 100 0.5 25 518.4 84 1.3
PDZ24B 23.72 24.78 120 0.5 30 520.4 80 1.3
PDZ27B 26.19 27.53 150 0.5 40 523.4 73 1.0
PDZ30B 29.19 30.69 200 0.5 40 526.6 66 1.0
PDZ33B 32.15 33.79 250 0.5 40 529.7 60 0.9
PDZ36B 35.07 36.87 300 0.5 60 533.0 59 0.8
2004 Mar 22 6
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
GRAPHICAL DATA
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
Tamb (°C)
Ptot
(mW)
500
400
300
100
0
200
150
MBK245
Tj = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6 1
300
100
0
200
MBG781
0.8 VF (V)
IF
(mA)
Fig.4 Temperature coefficient as a function of
working current; typical values.
PDZ2.4B to PDZ4.3B.
Tj = 25 °C to 150 °C.
handbook, halfpage
060
0
2
3
1
MGL273
20 40 IZ (mA)
SZ
(mV/K) 4.3
3.9
3.6
3.3 3.0
2.4
2.7
Fig.5 Temperature coefficient as a function of
working current; typical values.
PDZ4.7B to PDZ12B.
Tj = 25 °C to 150 °C.
handbook, halfpage
02016
10
0
5
5
MGL274
4812 IZ (mA)
SZ
(mV/K)
4.7
12
11
10
9.1
8.2
7.5
6.8 6.2
5.6
5.1
2004 Mar 22 7
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD32
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
lastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1
c
Q
HDvA
M
X
2004 Mar 22 8
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
NXP Semiconductors
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document order number: 9397 750 12615

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